• Title/Summary/Keyword: Crucible

Search Result 319, Processing Time 0.026 seconds

A study on removing impurities in the zind bate for hot dip galvannealed coatings (합금화 용융아연 도금욕의 불순물 제거에 관한 연구)

  • 진영구
    • Journal of Surface Science and Engineering
    • /
    • v.31 no.6
    • /
    • pp.371-378
    • /
    • 1998
  • The zind bate contaminated in the hot dip galvannealed operation was successfully by appling the dross formation mechanism ; the Fe content was lowered from 0.028% to 0.011% and the dress size was decreased from 15~20$\mu\textrm{m}$ to under 3$\mu\textrm{m}$. The cooled metal from CGL zinc bath during operation of the galvannealed steel strip was remelted in graphite crucible at the lab and agitated after increasing Al content from 0.14% to 0.16% with decreasing the molten metal temperature from $470^{\circ}C$to $445^{\circ}C$. The agitating was done by agitator and nitrogen. The molten was analyed by SEM and EDS. It was considered that the Fe and the bottom dross($FeZN_7$) could react with aluminium to from the float dress($Fe_2Al_5$) according to the molten metal temperature down and the float dress rise to the surface of the zine bath. So the Fe and dross in the bath could be romoved out of the bath. It was confirmed that the proper purication conditions of GA zine bath is 0.02% of Al increasing, bath temperature down from $460^{\circ}C$ to $450^{\circ}C$and agitator and nitrogen.

  • PDF

Sapphire single crystal growth by the modified heat exchanger method : I. Preparation with the square cross-section (수정된 열교환법에 의한 sapphire 단결정의 성장 : I. 사각단면 단결정의 제조)

  • 이민상;김성균;김동익;진영철
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.8 no.1
    • /
    • pp.1-9
    • /
    • 1998
  • In this study, we have investigated the preparation conditions of 45$\times$45$\times$20(mm) square cross-section sapphire single crystal by the modified heat exchanger method using water as a coolant. Melting and solidification processes were optimized by the systematic change of the chamber pressure with the heater temperature. As a results, solidification temperature was between 1960 and $1970^{\circ}C$. The crucible was formed by handling. Therefore its shape should had the 'spiral type' ear at edge of its side. Heat exchanger affected to the temperature distribution and gradient of molten alumina. Heat flux and unmelted seed were controlled by volume of heat exchanger. Voids were controlled by the cooling rate of the heater below $0.2^{\circ}C$/min.

  • PDF

Growth of Superconductor YBa2Cu3O7-x Single Crystal by Flux Method (Flux법에 의한 초전도체 YBa2Cu3O7-x 단결정 육성)

  • 오근호;김호건;명중재
    • Journal of the Korean Ceramic Society
    • /
    • v.27 no.1
    • /
    • pp.48-54
    • /
    • 1990
  • YBa2Cu3O7-x(=YBCO) single crystals were grown by flux method and the growing process of crystals was investigated. YBCO and 3BaO-7CuO composition powders were mixed by the ratio of 25 : 75(wt%), and the mixtures were melted at 105$0^{\circ}C$ in a electric furnace with no temperature-gradient. Then the melt was cooled at a rate 2-1$0^{\circ}C$/h in the above furnace. YBCO single crystal plate with average size of $1.5\times$2.0$\times$0.1㎣ were obtained in the cavities between crucible and solidified ingot, and the single crystals were oriented to <001> direction. The ingots of flux parts were analyzed by XRD and EDS for the purpose of presuming the growing process of the crystals. It was assumed that the divorced eutectic reaction, by which YBCO crystals were grown first and then BaCuO2 and CuO crystals, occured in the case of cooling rate faster than 2$^{\circ}C$/h. When the cooling rate was 2$^{\circ}C$/h, it was assumed that quasi-equilibrium eutectic reaction occured, so that YBCO, BaCuO2 and CuO crystals were grown at the same time.

  • PDF

Studies on Fabrication of Translucent Eletrooptic Ceramics (투광성 전기 광학용 소자의 제조에 관한 연구)

  • 김재육;이태근;임응극
    • Journal of the Korean Ceramic Society
    • /
    • v.22 no.6
    • /
    • pp.71-79
    • /
    • 1985
  • In order to fabricate the translucent electrooptic ceramics which are comparable to PLZT, $PNZT^*$ has been prepared from aqueous solutions of their itrate and chlorides. In the quarternary $Pb^{1-x} Nd_x(Zr_{0.63} Ti_{0.37})^{1-\frac{x}{4}O_3$, (PNZT) $(0.02\le x\ge 0.12)$ system cold-pressed PNZT slugs were sintered in $O_2$ in pt-crucible for 45 min. at 118$0^{\circ}C$ and were then heat-treated in air for 60 hrs. at 120$0^{\circ}C$ in Al2O3 crucibles containing $PbZrO_3$ powder to control the atmosphere. Mean particle size of calcined PNZT powders was 0.1~0.15${\mu}{\textrm}{m}$. It was found that the maximum value of optical transmission has been revealed at 6~8 at. % $Nd_2O_3$ added body and that their dielectric constant has been decreased as the frequency increased. Curic temperature has been varied inversely with $Nd^{3+}$ ion content up to 8 at. % and become constant above this value. $^*Pb_{1-x}Nd_x(Zr_{0.63} Ti_{0.37})_{1-2/4}O_3$

  • PDF

Effect of non-uniform magnetic field on the thermal behavior and mass transfer in magnetohydrodynamic Czochralski crystal growth of silicon (Magnetic Czochralski 실리콘 단결정 성장에서 열 및 유체유동과 질량전달에 미치는 비균일 자장의 효과)

  • 김창녕
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.8 no.4
    • /
    • pp.555-562
    • /
    • 1998
  • Under the influence of non-uniform magnetic field, melt flow in steady state and oxygen concentration in unsteady state are numerically investigated. The strength of the applied characteristic magnetic fields are B=0.1T, 0.2T, and 0.3T, respectively. The buoyancy effects due to the crucible wall heating and the thermocapillary effects due to the surface tention at the free surface are suppressed differentially by the non-uniform magnetic fields. As the intensity of characteristic magnetic fields is increasing, the recirculation region in the meridional plane is moving toward the growing crystal, and is diminishing. The oxygen concentration on the growing surface of crystals is decreasing and the uniformity of the oxygen concentration is increasing as the intensity of the magnetic fields is increasing.

  • PDF

On the Study Of AlSiCa($Al_2O_3-SiC-C$) refractories: (I) Synthesis of raw material using domestic chnmotte (AlSiCa($Al_2O_3-SiC-C$)계 내화물 재료에 관한 연구: (I) 국산 chamotte로부터 원료분말합성)

  • Shim, Kwang-Bo;Joo, Kyoung;Auh, Keun-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.7 no.4
    • /
    • pp.626-631
    • /
    • 1997
  • AlSiCa powders were prepared from the domestic Hadong Kaolin ($Al_2O_3{\cdot}2SiO_2{\cdot}2H_2O$). As a result of the reaction of Hadong Kaolin and carbon powder at reducing atmosphere, $Al_2O_3{\cdot}SiC$ composite started to form at $1300^{\circ}C$ and completed at $1400^{\circ}C$. The optimum amount of carbon was 1:4 in mole ratio. It was found that only bright-green $\beta-SiC$ phase forms when the mixture was packed without carbon powder in alumina crucible.

  • PDF

Control of oscillatory Czochralski convection by ACRT (ACRT에 의한 초크랄스키 대류진동 제어)

  • Choe, Jeong-Il;Seong, Hyeong-Jin
    • Transactions of the Korean Society of Mechanical Engineers B
    • /
    • v.20 no.7
    • /
    • pp.2397-2408
    • /
    • 1996
  • A numerical study was made of the control of transient oscillatory flow modes in Czochralski convection. The reduction of temperature oscillation was achieved by changing the rotation rate of crystal rod, .OMEGA.$_{S}$=.OMEG $A_{S0}$(1+ $A_{S}$sin(2.pi. $f_{S}$/ $t_{p}$t)). The temporal behavior of oscillation flow was scrutinized over broad ranges of two parameters, i.e., the rotation amplitude( $A_{S}$.leq.0.5) and the nondimensional frequency (0.9.leq. $f_{S}$.leq.1.5). The mixed convection parameter was ranged 0.225.leq.Ra/PrR $e^{2}$.leq.0.929, which encompassed the buoyancy-and forced-dominant convection regimes. Computational results revealed that the temperature oscillations could be reduced effectively by a proper adjustment of the control parameters. The uniformity of temperature distribution near the crystal rod was examined. The control of oscillatory flow modes was also made for a realistic, low value of Pr.

An Experimental Study of KTP Crystal Growing by TSSG Method (TSSG 법에 의한 KTP 단결정 성장의 실험적 연구)

  • 김형천;윤경구
    • Korean Journal of Crystallography
    • /
    • v.4 no.1
    • /
    • pp.42-48
    • /
    • 1993
  • KTP(KTiOPO4) single crystals were grown by the TSSG(top seeded solution growth) method using the Ksp401s flux. A heat-pipe based growing furnace was used, and the temperature stability and the homogenity of the growing solution in the platinum crucible were within the level of It 0.5℃ and ±0.9℃, respectively. The effects of some operating variables such as operating temperature range, initial cooling rate, forced stirring, reuse of the flux were investigated. As the initial cooling rate was decreased to the degree of 0.1℃/hr and some proper stirring effect by the crystal rotation was introduced to the present experimental condition, bigger and better crystals without inclusion grew. A single crystal with the maximum sixte of 44 ×39 ×17mm3 was obtained and showed the SHG conversion efficiency of 21.39) even without the anti-refilection coating.

  • PDF

Crystallization and charg-discharge properties of $Li_2O-P_2O_5-V_2O_5$-gless as Cathode material (정극재료로서 $Li_2O-P_2O_5-V_2O_5$ 유리의 결정화와 충방전 특성)

  • Son, Myeng-Mo;Lee, Heon-Su;Song, Hee-Woong;Gu, Hal-Bon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2000.04b
    • /
    • pp.157-159
    • /
    • 2000
  • Vanadate glass in the $Li_2O-P_2O_5-V_2O_5$ system with 60mol% $V_2O_5$ was prepared by melting the bath in pt. crucible followed by quenching on the copper plate. We found that $Li_2O-P_2O_5-V_2O_5$ glass ceramics obtained from nucleation of $Li_2O-P_2O_5-V_2O_5$ glass showed significantly higher capacity and longer cycle life than conventionally made crystalline $LiV_3O_8$. In the present paper, We describe the charge/discharge properties during crystallization process and find the best crystallization condition of $Li_2O-P_2O_5-V_2O_5$ glass as cathode material. The Charge and discharge capacity of $Li_2O-P_2O_5-V_2O_5$ glass was about 220mAh/g for the cell heat-treated at $250^{\circ}C$ for 2.5hr.

  • PDF

Melt-Crystal Interface Shape Formation by Crystal Growth Rate and Defect Optimization in Single Crystal Silicon Ingot (단결정 실리콘 잉곳 결정성장 속도에 따른 고-액 경계면 형성 및 Defect 최적화)

  • Jeon, Hye Jun;Park, Ju Hong;Artemyev, Vladimir;Jung, Jae Hak
    • Current Photovoltaic Research
    • /
    • v.8 no.1
    • /
    • pp.17-26
    • /
    • 2020
  • It is clear that monocrystalline Silicon (Si) ingots are the key raw material for semiconductors devices. In the present industries markets, most of monocrystalline Silicon (Si) ingots are made by Czochralski Process due to their advantages with low production cost and the big crystal diameters in comparison with other manufacturing process such as Float-Zone technique. However, the disadvantage of Czochralski Process is the presence of impurities such as oxygen or carbon from the quartz and graphite crucible which later will resulted in defects and then lowering the efficiency of Si wafer. The heat transfer plays an important role in the formation of Si ingots. However, the heat transfer generates convection in Si molten state which induces the defects in Si crystal. In this study, a crystal growth simulation software was used to optimize the Si crystal growth process. The furnace and system design were modified. The results showed the melt-crystal interface shape can affect the Si crystal growth rate and defect points. In this study, the defect points and desired interface shape were controlled by specific crystal growth rate condition.