• 제목/요약/키워드: Critical dimension measurement

검색결과 26건 처리시간 0.024초

Precise Edge Detection Method Using Sigmoid Function in Blurry and Noisy Image for TFT-LCD 2D Critical Dimension Measurement

  • Lee, Seung Woo;Lee, Sin Yong;Pahk, Heui Jae
    • Current Optics and Photonics
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    • 제2권1호
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    • pp.69-78
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    • 2018
  • This paper presents a precise edge detection algorithm for the critical dimension (CD) measurement of a Thin-Film Transistor Liquid-Crystal Display (TFT-LCD) pattern. The sigmoid surface function is proposed to model the blurred step edge. This model can simultaneously find the position and geometry of the edge precisely. The nonlinear least squares fitting method (Levenberg-Marquardt method) is used to model the image intensity distribution into the proposed sigmoid blurred edge model. The suggested algorithm is verified by comparing the CD measurement repeatability from high-magnified blurry and noisy TFT-LCD images with those from the previous Laplacian of Gaussian (LoG) based sub-pixel edge detection algorithm and error function fitting method. The proposed fitting-based edge detection algorithm produces more precise results than the previous method. The suggested algorithm can be applied to in-line precision CD measurement for high-resolution display devices.

In-line Critical Dimension Measurement System Development of LCD Pattern Proposed by Newly Developed Edge Detection Algorithm

  • Park, Sung-Hoon;Lee, Jeong-Ho;Pahk, Heui-Jae
    • Journal of the Optical Society of Korea
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    • 제17권5호
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    • pp.392-398
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    • 2013
  • As the essential techniques for the CD (Critical Dimension) measurement of the LCD pattern, there are various modules such as an optics design, auto-focus [1-4], and precise edge detection. Since the operation of image enhancement to improve the CD measurement repeatability, a ring type of the reflected lighting optics is devised. It has a simpler structure than the transmission light optics, but it delivers the same output. The edge detection is the most essential function of the CD measurements. The CD measurement is a vital inspection for LCDs [5-6] and semiconductors [7-8] to improve the production yield rate, there are numbers of techniques to measure the CD. So in this study, a new subpixel algorithm is developed through facet modeling, which complements the previous sub-pixel edge detection algorithm. Currently this CD measurement system is being used in LCD manufacturing systems for repeatability of less than 30 nm.

A Method for Improving Resolution and Critical Dimension Measurement of an Organic Layer Using Deep Learning Superresolution

  • Kim, Sangyun;Pahk, Heui Jae
    • Current Optics and Photonics
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    • 제2권2호
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    • pp.153-164
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    • 2018
  • In semiconductor manufacturing, critical dimensions indicate the features of patterns formed by the semiconductor process. The purpose of measuring critical dimensions is to confirm whether patterns are made as intended. The deposition process for an organic light emitting diode (OLED) forms a luminous organic layer on the thin-film transistor electrode. The position of this organic layer greatly affects the luminescent performance of an OLED. Thus, a system for measuring the position of the organic layer from outside of the vacuum chamber in real-time is desired for monitoring the deposition process. Typically, imaging from large stand-off distances results in low spatial resolution because of diffraction blur, and it is difficult to attain an adequate industrial-level measurement. The proposed method offers a new superresolution single-image using a conversion formula between two different optical systems obtained by a deep learning technique. This formula converts an image measured at long distance and with low-resolution optics into one image as if it were measured with high-resolution optics. The performance of this method is evaluated with various samples in terms of spatial resolution and measurement performance.

Methods to Measure the Critical Dimension of the Bottoms of Through-Silicon Vias Using White-Light Scanning Interferometry

  • Hyun, Changhong;Kim, Seongryong;Pahk, Heuijae
    • Journal of the Optical Society of Korea
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    • 제18권5호
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    • pp.531-537
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    • 2014
  • Through-silicon vias (TSVs) are fine, deep holes fabricated for connecting vertically stacked wafers during three-dimensional packaging of semiconductors. Measurement of the TSV geometry is very important because TSVs that are not manufactured as designed can cause many problems, and measuring the critical dimension (CD) of TSVs becomes more and more important, along with depth measurement. Applying white-light scanning interferometry to TSV measurement, especially the bottom CD measurement, is difficult due to the attenuation of light around the edge of the bottom of the hole when using a low numerical aperture. In this paper we propose and demonstrate four bottom CD measurement methods for TSVs: the cross section method, profile analysis method, tomographic image analysis method, and the two-dimensional Gaussian fitting method. To verify and demonstrate these methods, a practical TSV sample with a high aspect ratio of 11.2 is prepared and tested. The results from the proposed measurement methods using white-light scanning interferometry are compared to results from scanning electron microscope (SEM) measurements. The accuracy is highest for the cross section method, with an error of 3.5%, while a relative repeatability of 3.2% is achieved by the two-dimensional Gaussian fitting method.

터널링효과를 이용한 초미세 가공표면의 형상측정 (Profile Measurements of Micro-Machined Surfaces by Scanning Tunneling Microscopy)

  • 정승배;이용호;김승우
    • 대한기계학회논문집
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    • 제17권7호
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    • pp.1731-1739
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    • 1993
  • An application of Scanning Tunneling Microscopy(STM) is investigated for the measurement of 3-dimensional profiles of the macro-machined patterns of which critical dimensions lie in the range of submicrometers. Special emphasis of this investigation is given to extending the measuring ranges of STM upto the order of several micrometers while maintaining superb nanometer measuring resolution. This is accomplished by correcting hysteresis effects of piezoelectric actuators by using non-linear compensation models. Detailed aspects of design and control of a prototype measurement system are described with some actual measuring examples in which fine It patterns can successfully be traced with a resolution of 1 nanometer over a surface range of $4{\times}2$ micrometers.

e-Learning 비즈니스 모델과 성공요인에 관한 연구 (e-Learning Business Models and Critical Success Factors : An Empirical Assessment of e-Learning Firms)

  • 정대율;성행남
    • 한국정보시스템학회:학술대회논문집
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    • 한국정보시스템학회 2004년도 추계학술대회
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    • pp.431-443
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    • 2004
  • Many e-Learning companies are incorporated for the last five years, but most of them are failed or merged by the other company. The main reasons are the absence of competitive strategies and recognition of critical success factors. There are many researches on the critical success factors of Information System (IS) and Electronic Commerce (EC) . We derived e-Learning success factors from the previous IS and EC researches. We classified the success factors into five dimensions, (1) contents management, (2) learner management, (3) business strategy, (4) organizational support and ability, (5) learning management system (LMS), and each dimension has 9 or more success factors measurement items. We surveyed the perceived importance of the success factors from the manager of South Korea e-Learning firms. The paper categorized the items into two or more factors for each dimension by the exploratory factor analysis. Finally, we conducted one-way ANOVA for each success factors by the business model. As a result, there is different importance level for each success factors by the business model. We concluded that each e-Learning company needs different strategies to their business model.

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딥 러닝 회귀 모델 기반의 TSOM 계측 (A Through-focus Scanning Optical Microscopy Dimensional Measurement Method based on a Deep-learning Regression Model)

  • 정준희;조중휘
    • 반도체디스플레이기술학회지
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    • 제21권1호
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    • pp.108-113
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    • 2022
  • The deep-learning-based measurement method with the through-focus scanning optical microscopy (TSOM) estimated the size of the object using the classification. However, the measurement performance of the method depends on the number of subdivided classes, and it is practically difficult to prepare data at regular intervals for training each class. We propose an approach to measure the size of an object in the TSOM image using the deep-learning regression model instead of using classification. We attempted our proposed method to estimate the top critical dimension (TCD) of through silicon via (TSV) holes with 2461 TSOM images and the results were compared with the existing method. As a result of our experiment, the average measurement error of our method was within 30 nm (1σ) which is 1/13.5 of the sampling distance of the applied microscope. Measurement errors decreased by 31% compared to the classification result. This result proves that the proposed method is more effective and practical than the classification method.

Prediction of the welding distortion of large steel structure with mechanical restraint using equivalent load methods

  • Park, Jeong-ung;An, Gyubaek
    • International Journal of Naval Architecture and Ocean Engineering
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    • 제9권3호
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    • pp.315-325
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    • 2017
  • The design dimension may not be satisfactory at the final stage due to the welding during the assembly stage, leading to cutting or adding the components in large structure constructions. The productivity is depend on accuracy of the welding quality especially at assembly stage. Therefore, it is of utmost importance to decide the component dimension during each assembly stage considering the above situations during the designing stage by exactly predicting welding deformation before the welding is done. Further, if the system that predicts whether welding deformation is equipped, it is possible to take measures to reduce deformation through FE analysis, helping in saving time for correcting work by arresting the parts which are prone to having welding deformation. For the FE analysis to predict the deformation of a large steel structure, calculation time, modeling, constraints in each assembly stage and critical welding length have to be considered. In case of fillet welding deformation, around 300 mm is sufficient as a critical welding length of the specimen as proposed by the existing researches. However, the critical length in case of butt welding is around 1000 mm, which is far longer than that suggested in the existing researches. For the external constraint, which occurs as the geometry of structure is changed according to the assembly stage, constraint factor is drawn from the elastic FE analysis and test results, and the magnitude of equivalent force according to constraint is decided. The comparison study for the elastic FE analysis result and measurement for the large steel structure based on the above results reveals that the analysis results are in the range of 80-118% against measurement values, both matching each other well. Further, the deformation of fillet welding in the main plate among the total block occupies 66-89%, making welding deformation in the main plate far larger than the welding deformation in the longitudinal and transverse girders.

편광자-보정기-시료-보정기-검광자 배치를 가지는 준 수직입사 타원계의 타원식 (Ellipsometric Expressions for a Near-normal-incidence Ellipsometer with the Polarizer-compensator-sample-compensator-analyzer Configuration)

  • 김상열
    • 한국광학회지
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    • 제32권4호
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    • pp.172-179
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    • 2021
  • 높은 종횡비를 가지는 미세 패턴 시료의 하부층 구조결함에 대해 높은 민감도를 가지는 광학적 임계치수 측정 장비로서 준 수직입사 타원계를 제안한다. 이 준 수직입사 타원계에서는 입사광은 편광자와 위상지연자를 순차적으로 통과하며 반사광은 이들을 역순으로 통과한다. 하나의 편광자와 하나의 위상지연자를 입사광과 반사광이 공유하며 편광자와 위상지연자의 여러 방위각 조합에서 측정한 빛의 세기로부터 타원상수를 결정하는 이 준 수직입사 타원계의 측정원리를 검토하고 최적의 타원상수 측정방법을 제시한다.

광조형 공정시 휨에 의한 변형을 개선하기 위한 역설계 시스템의 적용 (Application of Reverse Engineering System for Improvement of Curl Distortion in Stereolithography Process)

  • 제우성
    • 반도체디스플레이기술학회지
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    • 제8권4호
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    • pp.7-13
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    • 2009
  • The slender device(long length and thin width) manufactured by stereolithography process suffers from large curl distortion. This paper adapts two control parameters such as a critical exposure and a penetration depth. The measurement of the test parts dimension are carried out by reverse engineering method with the optical 3-dimensional measurement equipment. We investigate how each parameter contributes to the part accuracy and estimates the optimal set of parameters which minimizes the dimensional error of the test parts. Finally, As being an the RAM slot as being an example of the slender device, the RAM slot is made with the optimal values of control parameter and the results are investigated

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