• The Transactions of the Korean Institute of Electrical Engineers B
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• v.53 no.9
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• pp.538-544
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• 2004

This paper presents the interruption capability of serial-hybrid type GCB (gas circuit breaker) compared with that of puffer type. First a puffer type model interrupter which has the stroke length of 80 mm has been designed and manufactured. And also, a serial-hybrid type interrupter which has the same design parameters as the puffer type interrupter except the serially arranged thermal-expansion chamber and puffer cylinder has been fabricated. Using a simplified synthetic test facility, the critical interruption capabilities of the two GCBs have been estimated. The critical di/dt, the critical dV/dt of ITRV (initial transient recovery voltage) and the minimum arcing time of the puffer type model GCB were 10.7 A/${\mu}\textrm{s}$, 5.5 kV/${\mu}\textrm{s}$, and 15.0 ms respectively. In the case of serial-hybrid type model GCB, each of the values was 16.6A/${\mu}\textrm{s}$, 11.5 kV/${\mu}\textrm{s}$ and 13.0 ms. As a conclusion of this work, it has been quantitatively confirmed that the hybrid type interrupter can obtain the sufficient interruption capability at the operating force which is so low that puffer type interrupter has not the interruption capability.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.6
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• pp.411-418
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• 2019

Light-triggered thyristors (LTTs) are essential components in high-power applications, such as HVDC transmission and several pulsed-power applications. Generally, LTT fabrication includes a deep diffusion of aluminum as a p-type dopant to form a uniform p-base region, which needs careful concern for contamination and additional facilities in silicon semiconductor manufacturing factories. We fabricated 4-inch 5,000 V LTTs with boron implantation and diffusion process as a p-type dopant. The LTT contains a main cathode region, edge termination designed with a variation of lateral doping, breakover diode, integrated resistor, photosensitive area, and dV/dt protection region. The doping concentration of each region was adjusted with different doses of boron ion implantation. The fabricated LTTs showed good light triggering characteristics for a light pulse of 905 nm and a blocking voltage (V_DRM) of 6,500 V. They drove an average on-state current (I_TAVM) of 2,270 A, peak nonrepetitive surge current (I_TSM) of 61 kA, critical rate of rise of on-state current (di/dt) of 1,010 A/㎲, and limiting load integral (I²T) of 17 MA²s without damage to the device.