• 한국전기전자재료학회논문지
• /
• 제15권3호
• /
• pp.281-286
• /
• 2002

In odder to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. First, we prepared CoCr and CoCrTa single layer using the Facing Targets Sputtering system to investigate theirs properties. It was revealed that with increasing the film thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. The CoCrTa thin film showed bettor crystalline and magnetic characteristics than CoCr thin film. As a result of investigating magnetic properties of CoCr and CoCrTa magnetic layer on introducing the Si underlayer, perpendicular coercivity and saturation magnetization of CoCr/Si and CoCrTa/Si bilayered thin film were decreased due to the increased grain size and diffusion of Si atoms to magnetic layer. And they showed constant with increasing the film thickness of Si thin film. However, in case of CoCrTa/Si bilayered thin film, in-plane coercivity was controlled low at about 250Oe. The c-axis orientations of CoCr/si and CoCrTa/Si bilayered thin film showed a good crystalline characteristics as about $2^{\circ}$.

• 한국전기전자재료학회논문지
• /
• 제18권8호
• /
• pp.714-719
• /
• 2005

NiCr thin film was deposited by DC magnetron sputtering on $A;_2O_3$/Si substrate with NiCr (80:20) alloy target. NiCr thin films were annealed at $300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C,\;600^{\circ}C,\;and\;700^{\circ}C$ for 6 hr in $H_2$ after annealing at $500^{\circ}C$ for 6hr in air atmosphere, respectively. To analyze NiCr thin film properties, the changes of its micro structure were Investigated through field emission scanning electron microscope (FESEM). X-ray photoelectron spectroscopy (XPS) was used to analyze a surface of NiCr thin film. Resistance of NiCr thin film was measured by 4-point probe technique. The generated heats were measured by infrared thermometer through the application of DC voltage (5 V/l2 V). NiCr thin film treated by gradational double annealing process had uniform and small grains. Maximum temperature generated heat by NiCr micro heater was $173^{\circ}C$. We expect that our results will be a useful reference in the realization of NiCr micro heater.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 1997년도 춘계학술대회 논문집
• /
• pp.1053-1057
• /
• 1997

Laser thin film process with a Q-switch pulsed YAG laser was performed for micro machining. In this research, we performed basic Cr thin film on glass substrates removal machining experiments. Form experiments, it happens not only evaporration of thin film but also spatter and cohesion of melting substance in working region, when machining a Cr thin film by Q-switch YAG laser beam irradiation. Critical energy of surface irradiation type by irradiation direction of laser in a face composing thin film on the glass is higher than that of back irradiation type, but the latter is favorable because of spatter appearance. In case of image formation position when laser beam is irradiated, the defocus is permitted to a certain extent within forcus depth. Ifexceeds focus depth, formation of pattern is vanishing step by step.

• 한국전기전자재료학회논문지
• /
• 제13권5호
• /
• pp.444-450
• /
• 2000

We prepared Co-Cr thin film for perpendicular magnetic recording media with facing targets sputtering system(FTS system) which can deposit a high quality thin film in plasma-free state and wide range of working pressure. The effect of sputtering conditions(argon gas pressure and substrate temperature) on the magnetic and the crystallographic characteristic of Co-Cr thin film was investigated. And the variation of perpendicular coercivity with the variation of film thickness was studied. As a result we obtained the high perpendicular coercivity of 1900Oe and the good dispersion angle of c-axis($\Delta$$\theta$$_{50}$) of 5$^{\circ}$on the film thickness of 100nm for the promising recording layer of perpendicular magnetic recording media.c recording media.a.

• Journal of Electrical Engineering and Technology
• /
• 제2권4호
• /
• pp.525-531
• /
• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 추계학술대회 논문집
• /
• pp.419-422
• /
• 1999

We prepared CoCr thin film for perpendicular magnetic recording media by facing targets sputtering system(FTS system) which can deposit a high quality thin films in plasma-free state and wide range of working pressure. In this study, we investigated that the effect of sputtering condition , that Argon gas pressure and substrate temperature, on magnetic and crystallographic characteristic of CoCr thin film as well as the variation perpendicular coercivity in changing of film's thickness. Crystallographic and magnetic characteristic of prepared thin films were evaluated by x-ray fractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.100-103
• /
• 2001

In order to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. With the thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. It was revealed that by introducing the Si underlayer, the c-axis orientation of CoCr, CoCrTa magnetic layer was improved largely. However, with increasing Si film thickness, perpendicular coercivity and saturation magnetization of Cocr/si, CoCrTa/Si bilayered thin films was decreased. Grain size of bilayered thin films became larger.

• Transactions on Electrical and Electronic Materials
• /
• 제7권5호
• /
• pp.267-270
• /
• 2006

The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.692-695
• /
• 1999

This paper presents annealing characteristics of CrN thin-film strain gauges, which were deposited on glass by DC reactive magnetron sputtering in an argon-nitrogen atmosphere)Ar-(5-~25%)$N_2$. The physical and electrical characteristics of these films investigated with the thickness range 3500$\AA$ of CrN thin films, annealing temperature (100~30$0^{\circ}C$) and annealing time (24-72hr) . The optimized condition of CrN thin-film strain gauges were thickness range of 3500$\AA$ and annealing condition(30$0^{\circ}C$ , 48hr) in Ar-10%$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauge is obtained a high resistivity, $\rho$=1147.65$\Omega$cm a low temperature coefficient of 11.17. And change in resistance after annealing for the CrN thin film were quitely linear and stable.

• Korean Chemical Engineering Research
• /
• 제54권5호
• /
• pp.598-605
• /
• 2016

V-Cr-Y 합금은 높은 투과도와 선택도를 가진 수소 분리막 재료이다. V-Cr-Y 분리막의 투과속도를 증가시키기 위하여 sputtering을 이용한 V-Cr-Y 박막을 제조하고 그 특성을 연구하였다. V-Cr-Y 성분이 각각 89.8%, 10.0%, 0.2%인 타겟을 이용하여 실리콘웨이퍼 위에 박막을 증착시켰으며, EDS 분석을 통해 박막조성이 타겟조성과 일치함을 확인하였다. 스퍼터링 온도와 출력이 증가할수록 박막의 성장속도와 결정크기가 증가하였으며, 압력이 감소할수록 결정구조가 보다 미세하고 치밀해졌다. 최적 스퍼터링 조건은 교류 고주파(RF), 2mTorr, 300W, 상온이었으며, 이 조건으로 제조한 박막을 열처리 하여 수소분리에 적합한 박막을 얻을 수 있었다.