• Title/Summary/Keyword: Coupling device

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V-band CPW 3-dB Directional Coupler using Tandem Structure (Tandem구조를 이용한 V-band용 CPW 3-dB 방향성 결합기)

  • Moon Sung-Woon;Han Min;Baek Tae-Jong;Kim Sam-Dong;Rhee Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.42 no.7 s.337
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    • pp.41-48
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    • 2005
  • We design and fabricate 3-dB tandem directional coupler using the coplanar waveguide structure which is applicable to balanced amplifiers and mixers for 60 GHz wireless local area network system. The coupler comprises the multiple-sectional parallel-coupled lines to facilitate the fabrication process, and enable smaller device size and higher directivity than those of the conventional 3-dB coupler employing the edge-coupled line. In this study, we adopt the structure of two-sectional parallel-coupled lines of which each single-coupled line has a coupling coefficient of -8.34 dB and airbridge structure to monolithically materialize the uniplanar coupler structure instead of using the conventional multilayer or bonded structure. The airbridge structure also supports to minimize the parasitic components and maintain desirable device performance in V-band (50$\~$75 GHz). The measured results from the fabricated couplers show couplings of 3.S$\~$4 dB and phase differences of 87.5$^{\circ}{\pm}1^{\circ}$ in V-band range and show directivities higher than 30 dB at a frequency of 60 GHz.

Simulation Study on a Quasi Fermi Energy Movement in the Floating Body Region of FITET (Field-induced Inter-band Tunneling Effect Transistor)

  • Song, Seung-Hwan;Kim, Kyung-Rok;Kang, Sang-Woo;Kim, Jin-Ho;Kang, Kwon-Chil;Shin, Hyung-Cheol;Lee, Jong-Duk;Park, Byung-Gook
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.679-682
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    • 2005
  • Negative-differential conductance (NDC) characteristics as well as negative-differential trans-conductance (NDT) characteristics have been observed in the room temperature I-V characteristics of Field-induced Inter-band Tunneling Effect Transistors (FITETs). These characteristics have been explained with inter-band tunneling physics, from which, inter-band tunneling current flows when the energy bands of degenerately doped regions align, and it does not flow when they don't. FITET is an SOI device and the body region is not directly connected to the external terminal. Therefore, Fermi energy in the body region is determined by electrical coupling among four regions - gate, source, drain and substrate. So, a quasi Fermi energy of the majority carriers in the floating body region can be changed by external voltages, and this causes the energy band movements in the body region, which determine whether the energy bands between degenerately doped junctions aligns or not. This is a key point for an explanation of NDT and NDC characteristics. In this paper, a quasi Fermi energy movement in the floating body region of FITET was investigated by a device simulation. This result was applied for the description of relation between quasi Fermi energy in the body region and external gate bias voltage.

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Fabrication and Characteristics of a Highly Sensitive GMR-SV Biosensor for Detecting of Micron Magnetic Beads (미크론 자성비드 검출용 바이오센서에 대한 고감도 GMR-SV 소자의 제작과 특성 연구)

  • Choi, Jong-Gu;Lee, Sang-Suk;Park, Young-Seok
    • Journal of the Korean Magnetics Society
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    • v.22 no.5
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    • pp.173-177
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    • 2012
  • The multilayer structure of glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(t nm)/NiFe(3 nm)/FeMn(12 nm)/Ta(5.8 nm) as typical GMR-SV (giant magnetoresistance-spin valve) films is prepared by ion beam sputtering deposition (IBD). The coercivity and magnetoresiatance ratio are increased and decreased for the decrease of Cu thickness when the thickness of nonmagnetic Cu layer from is varied 2.2 nm to 3.0 nm. It means that the decrease of non-magntic layer is effected to the interlayer exchange coupling of pinned layer and the spin configuration array of free layer. For experiment of detecting and dropping of magnetic beads we used the GMR-SV sensor with glass/Ta/NiFe/Cu/NiFe/FeMn/Ta structure. From the comparison of before and after for the dropping status of magnetic bead, the variations of MR ratio, $H_{ex}$, and $H_c$ are showed 0.9 %, 3 Oe, and 2 Oe, respectively. The fabrication of GMR-SV sensor was included in the process of film deposition, photo-lithography, ion milling, and MR measurement. Further, GMR-SV device can be easily integrated so that detecting biosensor on a single chip becomes possible.

Development of Battery-free SAW Integrated Microsensor for Real Time Simultaneous Measurement of Humidity and $CO_2$ component (습도와 $CO_2$ 농도의 실시간 동시감지를 위한 무전원 SAW 기반 집적 센서 개발)

  • Lim, Chun-Bae;Lee, Kee-Keun;Wang, Wen;Yang, Sang-Sik
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.1
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    • pp.13-19
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    • 2009
  • A 440MHz wireless and passive surface acoustic wave (SAW) based chemical sensor was developed on a $41^{\circ}YX\;LiNbO_3$ piezoelectric substrate for simultaneous measurement of $CO_2$ gas and relative humidity (RH) using a reflective delay line pattern as the sensor element. The reflective delay line is composed of an interdigital transducer (IDT) and several shorted grating reflectors. A Teflon AF 2400 and a hydrophilic $SiO_2$ layer were used as $CO_2$ and water vapor sensitive films. The coupling of mode (COM) modeling was conducted to determine optimal device parameters prior to fabrication. According to simulation results, the device was fabricated and then wirelessly measured using the network analyzer. The measured reflective coefficient $S_{11}$ in the time domain showed high signal/noise (S/N) ratio, small signal attenuation, and few spurious peaks. In the $CO_2$ and humidity testing, high sensitivity ($2^{\circ}/ppm$ for $CO_2$ detection and $7.45^{\circ}/%$RH for humidity sensing), good linearity and repeatability were observed in the $CO_2$ concentration ranges of $75{\sim}375ppm$ and humidity levels of $20{\sim}80%$RH. Temperature and humidity compensations were also investigated during the sensitivity evaluation process.

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A Study on the Development of 3D Virtual Reality Campus Tour System for the Adaptation of University Life to Freshmen in Non-face-to-face Situation - Autonomous Operation of Campus Surrounding Environment and University Information Guide Screen Design Using Visual Focus Movement - (비대면 상황에서 신입생 대학생활적응을 위한 3차원 가상현실 캠퍼스 투어시스템 개발연구 - 시야초점의 움직임을 활용한 캠퍼스주변 환경의 자유로운 이동과 대학정보안내화면 GUI설계 -)

  • Lim, Jang-Hoon
    • Journal of Information Technology Applications and Management
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    • v.28 no.3
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    • pp.59-75
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    • 2021
  • This study aims to establish a foundation for autonomous driving on campus and communication of abundant university information in the HCI environment in a VR environment where college freshmen can freely travel around campus facilities. The purpose of this study is to develop a three-dimensional VR-style campus tour system to establish a media environment to provide abundant university information guidance services to freshmen in non-face-to-face situations. This study designed a three-dimensional virtual reality campus tour system to solve the problem of discontinuity in which VR360 filming space does not lead to space like reality, and to solve many problems of expertise in VR technology by constructing an integrated production environment of tour system. We aim to solve the problem of inefficiency, which requires a large amount of momentum in virtual space, by constructing a GUI that utilizes the motion of the field of view focus. The campus environment was designed as a three-dimensional virtual reality using a three-dimensional graphic design. In non-face-to-face situations, college freshmen freely transformed the HMD VR device, smartphone, FPS operation mode of the gyroscope sensor. The design elements of the three-dimensional virtual reality campus tour system were classified as ①Visualization of factual experiences, ②Continuity of space movement, ③Operation, automatic operation mode, ④Natural landscape animation, ⑤Animation according to wind direction, ⑥Actual space movement mode, ⑦Informatization of spatial understanding, ⑧GUI by experience environment, ⑨Text GUI by building, ⑩VR360, 3D360 Studio Environment, ⑪Three-dimensional virtual space coupling block module, ⑫3D360-3D Virtual Space Transmedia Zone, ⑬Transformable GUI(VR Device Dual Viewer-Gyro Sensor Full Viewer-FPS Operation Viewer) and an integrated production environment was established with each element. It is launched online (http://vautu.com/u1) by constructing a GUI for free driving mode and college information screens to adapt to college life for freshmen, and designing an environment that can be used simultaneously by current media such as PCs, Android, and iPads. Therefore, it conducted user research, held a development presentation, a forum on excellence in university innovation support projects, and applied it as a system on the website of a particular university. College freshmen will be able to experience university information directly from the web and app to the virtual reality campus environment.

The Characteristics of PZ-PT-PWN Piezoelectric Ceramics for Application to High Power Device (고출력 압전 디바이스 응용을 위한 PZ-PT-PMN계 압전 세라믹의 특성)

  • Jeong, Su-Hyeon;Hong, Jong-Guk;Lee, Jong-Seop;Chae, Hong-In;Yun, Man-Sun;Im, Gi-Jo
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.3
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    • pp.155-160
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    • 2000
  • The piezoelectric properties and the doping effect for$0.95Pb(Zr_xTi_{1-x})O_3+0.05Pb(Mn1/3Nb2/3)O_3$ compositions were studied. Also, the heat generation and the change of electromechanical characteristics, the important problem in practical usage, were investigated under high electric field driving. As a experiment results under low electric field, the values of kp and $\varepsilon33T$ were maximized, but Qm was minimized(Kp=0.57, Qm=1550) in the composition of x=0.51. In order to increase the values of Qm $Nb_2O_5$ was used as a dopant. As the result of that, the grain size was suppressed and the uniformity of grain was improved. Also, the values of kp decreased, and the values of Qm increased with doping concentration of $Nb_2O_5$. As a experiment results under high electric field driving, when vibration velocity was lower than 0.6[m/s], the temperature increase was $20[^{\circ}C]$, and the change ratio of mechanical quality factor was less than 10[%]. So, its electromechanical characteristics was very stable. Conclusively, piezoelectric ceramic composition investigated at this paper is suitable for application to high power piezoelectric devices.

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Synthesis and Properties of Diarylamino-Substituted Linear and Dendritic Oligoquinolines for Organic Light-Emitting Diodes

  • Lee, Ho-Joon;Xin, Hao;Park, Seong-Min;Park, Seog-Il;Ahn, Taek;Park, Dong-Kyu;Jenekhe, Samson A.;Kwon, Tae-Woo
    • Bulletin of the Korean Chemical Society
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    • v.33 no.5
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    • pp.1627-1637
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    • 2012
  • The coupling reaction between 5-bromo-3-phenylbenzo[c]isoxazole and diphenylamine followed by further condensation with a mono-, di- or ter-acetyl aromatic compound in the presence of diphenyl phosphate at $145^{\circ}C$ gave a novel asymmetric diarylquinolines, oligoquinolines with diphenylamine endgroups, and a first generation quinoline dendrimer in 41-82% isolated yield. The electrochemical and photophysical properties of the oligoquinolines were characterized by cyclic voltammograms (CVs) and spectroscopy. All the quinolines emit bright sky blue light due to charge transfer from quinoline group to diphenly amine with very high quantum efficiency (> 90%). Organic light-emitting diodes (OLEDs) were fabricated using these quinolines as emitting materials. Among different device architectures explored, OLEDs with a structure of ITO/PEDOT (40 nm)/TAPC (15 nm)/D-A quinoline (40 nm)/TPBI (30 nm)/LiF (1 nm)/Al using TAPC as an electron blocking layer and TPBI as a hole blocking layer gave the best performance. A high external quantum efficiency in the range of 1.2-2.3% were achieved in all the quinolines with the best performance in BBQA(5). Our results indicate diarylamino-substituted oligoquinoline and dendrimer are promising materials for OLEDs applications.

Design of External Coil System for Reducing Artifact of MR Image due to Implantable Hearing Aid (이식형 보청기에 의한 자기공명 영상의 인공음영 축소를 위한 외부 코일 시스템 설계)

  • Ahn, Hyoung Jun;Lim, Hyung-Gyu;Kim, Myoung Nam;Cho, Jin-Ho
    • Journal of Korea Multimedia Society
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    • v.19 no.2
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    • pp.375-385
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    • 2016
  • Recently, several implantable hearing aids such as cochlear implant, middle ear implant, etc., which have a module receiving power and signal from outside the body, are frequently used to treat the hearing impaired patients. Most of implantable hearing aids are adopted permanent magnet pairs to couple between internal and external devices for the enhancement of power transmission. Generally, the internal device which containing the magnet in the center of receiving coil is implanted under the skin of human temporal bone. In case of MRI scanning of a patient with the implantable hearing aid, however, homogeneous magnetic fields of the MRI might be interfered by the implanted magnet. For the above reasons, the MR image is degraded by large area of artifact, so that diagnostics are almost impossible in deteriorated region. In this paper, we proposed an external coil system that can reduce the artifact of MR image due to the internal coupling magnet. By finite element analysis estimating area of MR artifact according to varying current and shape of the external coil, optimal coil parameters were extracted. Finally, the effectiveness of the proposed external coil system was verified by confirming the artifact at real MRI scan.

A Study on Malfunction Mode and Failure Rate Properties of Semiconductor by Impact of Pulse Repetition Rate (펄스 반복률에 의한 반도체 소자의 오동작 모드와 고장률에 관한 연구)

  • Park, Ki-Hoon;Bang, Jeong-Ju;Kim, Ruck-Woan;Huh, Chang-Su
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.6
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    • pp.360-364
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    • 2015
  • Electronic systems based on solid state devices have changed to be more complicated and miniaturized as the electronic systems developed. If the electronic systems are exposed to HPEM (high power electromagnetics), the systems will be destroyed by the coupling effects of electromagnetic waves. Because the HPEM has fast rise time and high voltage of the pulse, the semiconductors are vulnerable to external stress factor such as the coupled electromagnetic pulse. Therefore, we will discuss about malfunction behavior and DFR (destruction failure rate) of the semiconductor caused by amplitude and repetition rate of the pulse. For this experiment, the pulses were injected into the pins of general purpose IC due to the fact that pulse injection test enables the phenomenon after the HPEM is coupled to power cables. These pulses were produced by pulse generator and their characteristics are 2.1 [ns] of pulse width, 1.1 [ns] of pulse rise time and 30, 60, 120 [Hz] of pulse repetition rate. The injected pulses have changed frequency, period and duty ratio of output generated by Timer IC. Also, as the pulse repetition rate increases the breakdown threshold point of the timer IC was reduced.

Improved Magnetic Anisotropy of YMn1-$xCrxO_3 $ Compounds

  • Yoo, Y.J.;Park, J.S.;Kang, J.H.;Kim, J.;Lee, B.W.;Kim, K.W.;Lee, Y.P.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.218-218
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    • 2012
  • Recently, hexagonal manganites have attracted much attention because of the coexistence of ferroelectricity and antiferromagnetic (AFM) order. The crystal structure of hexagonal manganites consists of $MnO_5$ polyhedra in which $Mn^{3+}$ ion is surrounded by three oxygen atoms in plane and two apical oxygen ions. The Mn ions within Mn-O plane form a triangular lattice and couple the spins through the AFM superexchange interaction. Due to incomplete AFM coupling between neighboring Mn ions in the triangular lattice, the system forms a geometrically-frustrated magnetic state. Among hexagonal manganites, $YMnO_3$, in particular, is the best known experimentally since the f states are empty. In addition, for applications, $YMnO_3$ thin films have been known as promising candidates for non-volatile ferroelectric random access memories. However, $YMnO_3$ has low magnetic order temperature (~70 K) and A-type AFM structure, which hinders its applications. We have synthesized $YMn1_{-x}Cr_xO_3$ (x = 0, 0.05 and 0.1) samples by the conventional solid-state reaction. The powders of stoichiometric proportions were mixed, and calcined at $900^{\circ}C$ for $YMn1_{-x}Cr_xO_3$ for 24 h. The obtained powders were ground, and pressed into 5-mm-thick disks of 1/2-inch diameter. The disks were directly put into the oven, and heated up to $1,300^{\circ}C$ and sintered in air for 24 h. The phase of samples was checked at room temperature by powder x-ray diffraction using a Rigaku Miniflex diffractometer with Cu $K{\alpha}$ radiation. All the magnetization measurements were carried out with a superconducting quantum-interference-device magnetometer. Our experiments point out that the Cr-doped samples show the characteristics of a spin-glass state at low temperatures.

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