• Journal of the Korean Institute of Telematics and Electronics B
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• v.33B no.12
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• pp.24-30
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• 1996

In this paper, we designed a new type of high frequency on-chip voltage controlled oscillator (VCO) using GaAs MESFET, and their performances were comapred with those of the conventional VCO. Each VCO was designed with three-to-five ring oscillator and inverter, buffer and NOR gate were implemented by GaAs source coupled FET logic, which has better speed and noise performance compared to other GaAs MESFET logic. SPICE simulation showed that the gain of conventional and our new VCO was 1.24[GHz/V], 0.54[GHz/V], respectively. The frquency tuning range were 2.31 to 3.55 [GHz] for conventional VCO and 2.47 to 3.01[GHz] for our new design. This shows that the factor of two gain reductin was achieved without too much sacrifice in the oscillation frequency. For our new VCO, the average temperature index was -2[MHz/.deg. C] in the range of -20~85[.deg. C] the power supply noise index was 5[MHz/%] for 5.3[V].+-.10[%] and total power consumption was 60.58[mW].

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.7A
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• pp.947-954
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• 1999

A new low phase noise Dielectric Resonator Parallel Feedback Oscillator(DRPFO) that is proposed in this paper has a simple structure so that it can be fabricated in low cost and with high performance. The proposed DRPFO is in a feedback loop oscillator configuration, which is composed of a low noise amplifier, a power amplifier, a power attenuator, a power divider and a parallel resonator feedback element that consists of a dielectric resonator coupled with two microstrip lines. The measured phase noise of DRPFO was less than -81 dBc/Hz at offset frequency 1 kHz of 10.75 GHz carrier frequency, and the frequency stability of DRPFO was less than $\pm$200 kHz over the temperature range of -40$^{\circ}$C to +60$^{\circ}$C.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.1
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• pp.74-79
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• 2002

The EM(Engineering Model) VCO(Voltage Controlled Oscillator) is nonlinear designed for LO(Local Oscillator) of Ka-band satellite transponder. The microstripline coupled with dielectric resonator is implemented as a high impedance inverter to improve the phase noise, and the quality factor of resonant circuit can be transferred to active device with the enhanced loaded quality factor. The developed VCO has the oscillating tuning range of 9.7965~9.8032 GHz for the control voltage range of 0~12 V. This VCO requires the DC power of 8 V and 17 mA. The phase noise characteristics are -96.51 dBc/Hz @10 KHz and -116.5 dBc/Hz @100 KHz, respectively. And, the output power of 7.33 dBm is measured.

• IEIE Transactions on Smart Processing and Computing
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• v.4 no.3
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• pp.149-151
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• 2015

Coupling with a ring of capacitors introduces in-phase coupling current in multi-stage LC oscillators, increasing coupling strength and phase spacing accuracy. Capacitive coupling is effective at high-frequency applications because it increases coupling strength with the operating frequency. However, capacitive loading from the ring lowers operating frequency and reduces the tuning range. Mathematical expressions of phase noise and phase spacing accuracy with capacitive coupling are examined here, and transistor-level simulations confirm the effectiveness of the capacitive coupling.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.5
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• pp.1150-1153
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• 2008

The coupled oscillation of multi-walled carbon-nanotube (MWCNT) oscillators consisting of (5n, 5n) CNTs was investigated by molecular dynamics simulations. The results show that the inter-wall coupling leads to frequency splits. And there are consistently three primary frequency peaks for the quadric-walled, penta-walled and hexa-walled CNT oscillators. It is independent of the wall parameters, suggesting applications as triple-frequency generators. Furthermore, at least one of the primary frequencies of a MWCNT oscillator is lower than that of its double-walled counterpart.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.5
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• pp.1304-1316
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• 1996

In this paper, A VCO(Voltage Controlled Oscillator) in use of clock recovery/data regeneration circuit for 10 Gbps fiber optic receivers was developed. The improved hair-pin resonator with a parallel coupled lines, which has been applied to microstrip filters, was used as a resonance part. As a frequcncy tuning device by substituting 3-terminalMESFET vaaractor for varactor diode, an MMIC manufacturing process will be simplified. Since a hair-pin resonator is planar type compared to the dielectric resonator and has a relatively flat reactance verus frequency, it will be favorable to apply a hair-pin resonator to an MMIC, in addition wideband frequency tuning range is able to be obtained.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.1
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• pp.33-39
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• 1979

The resonance frequency of the slot-line resonator in the shielding box is analyzed. It is verified experimentally that an X-Band oscillator may be realized by the resonator in the microstrip circuit mount as a shielding cavity, and by shunt-connecting the IMPACT diode on the slot-line, And the oscillating power can be coupled with the microstrip by the coupling aperure on the opposite surface of the microstrip by the coupling aperure on the opposite of the substrate of the microstrip cirsuit.

• Journal of the Korean Institute of Telematics and Electronics
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• v.8 no.5
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• pp.27-39
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• 1971

It is described in this paper that a newly developed quartz frequency modulator using V. V. C. diode would be more suitable for mobile FM portable transmitter, than conventional reactance modulator because of less need for multiplier stages in the former type. It is realized by theoretical and experimental results what is the most optimum relationship between the quartz oscillator, V. V. C. diode and coupled circuit elements in order to get the desired modulation linearity and carrier frequency stability depending upon the variation of circumference temperature and suplied source voltages.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.519-520
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• 2006

In this paper, we propose a voltage-controlled ring oscillator (VCO) for a 900 MHz low-noise fractional-N frequency synthesizer. The VCO delay cell is based on an nMOS source-coupled pair with load elements [1] and a combined tail current sources which consist of a large and a small current source to control the integer and fractional behaviors, respectively. The Spectre simulation results of the scheme in a 0.18um CMOS process show the accurate control of the KVCO better than the conventional one.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1362-1369
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• 2018

A method aimed at improving the beam-wave interaction efficiency by changing the coupling slot configuration has been proposed in the study of extended interaction oscillators (EIOs). The dispersion characteristics, coupling coefficient and interaction impedance of the high-frequency structure based on different types of coupling slots have been investigated. Four types of coupled cavity structures with different layouts of the coupling slots have been compared to improve the beam-wave interaction efficiency, so as to analyze the beam-wave interaction and practical applications. In order to determine the improvement of the coupling slot to a coupled cavity circuit in an EIO, we designed four nine-gap EIOs based on the coupled cavity structure with different coupling slot configurations. With different operating frequencies and voltages takes into consideration, beam voltages from 27 to 33 kV have been simulated to achieve the best beam-wave interaction efficiency so that the EIOs are able to work in the $2{\pi}$ mode. The influence of the Rb and the ds on the output power is also taken into consideration. The Rb is the radius of the electron beam, and the ds is the width of the coupling slot. The simulation results indicate that a single-slot-type EIO has the best beam-wave interaction efficiency. Its maximum output power is 2.8 kW and the efficiency is 18% when the operating voltage is 31 kV and electric current is 0.5 A. The output powers of these four EIOs that were designed for comparison are not less than 1.7 kW. The improved coupling-slot configurations enables the extended interaction oscillator to meet the different engineering requirements better.