• Journal of Korea Water Resources Association
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• v.51 no.11
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• pp.971-976
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• 2018

An accurate analysis of pipeline transient is important for proper management and operation of a water distribution systems. The computational accuracy and its cost are two distinct components for unsteady flow analysis model, which can be strength and weakness of three-dimensional model and one-dimensional model, respectively. In this study, we used two-dimensional unsteady flow model with Five-Region Turbulence model (FRTM) with the implementation of interaction between liquid and air Since FRTM has an empirical component to be determined, we explored the response feature of two-dimensional flow model. The relationship between friction behaviour and the variation of undetermined parameter was configured through the comparison between numerical simulations and experimental results.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.175-175
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• 2010

Transparent conducting oxide (TCO) films are widely used as transparent conducting thin film material for application in various fields such as solar cells, optoelectronic devices, heat mirrors and gas sensors, etc. Recently the increased utilization of many transparent electrodes has accelerated the development of inexpensive TCO materials. Indium tin oxide (ITO) film is well-known for TCO materials because of its low resistivity, but there is disadvantage that it is too expensive. ZnO film is cheaper than ITO but it shows thermally poor stability. On the contrary, antimony-doped tin oxide films (ATO) are more stable than TCO films such as Al-doped zinc oxide (AZO) and ITO. Moreover, SnO2 film shows the best thermal and chemical stability, low cost and mechanical durability except the poor conductivity. However, annealing is proved to improve the conductivity of ATO film. Therefore, in this work, antimony (6 wt%) doped tin oxide films to improve the conductivity were deposited on 7059 corning glass by RF magnetron sputtering method for the application to transparent electrodes. In general, of all TCO films, glass is the most commonly selected substrate. However, for future development in flexible devices, glass is limited by its intrinsic inflexibility. In this study, we report the growth and properties of antimony doped tin oxide (ATO) films deposited on PES flexible substrate by using RF magnetron sputtering. The optimization process was performed varying the sputtering parameters, such as RF power and working pressure, and parameter effect on the structural, electrical and optical properties of the ATO films were investigated.

• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.4
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• pp.372-380
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• 2004

This paper proposes a single-power-stage high frequency resonant AC-DC converter with high power factor using ZVS(Zero Voltage Switching), and integrates a conventional converter with two stage into single stage converter. Input power factor is possible to be improved as a high power factor because inductor for power factor correction(PFC) is connected in input and converter is operated in discontinued current mode(DCM) with constant duty cycle and variable switching frequency. The conventional converter with two stage need to add a switch in order to control a power factor, but single stage converter have a advantage that system is simple and cost is down, confidence is improved, etc. This paper described a operation principle and characteristic analysis for single stage AC-DC converter with high power factor and have evaluated characteristic values by using normalized parameter. We make a experimental equipment using MOSFET as a switching device on the basis of characteristic values obtained from characteristic evaluations and we conform a rightfulness of theoretical analysis by comparing theoretical waveforms and experimental waveforms.

• Journal of Power Electronics
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• v.13 no.4
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• pp.516-527
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• 2013

This paper presents a new overall system for state-of-available-power (SoAP) prediction for a lithium-ion battery pack. The essential part of this method is based on an adaptive network architecture which utilizes both fuzzy model (FIS) and artificial neural network (ANN) into the framework of adaptive neuro-fuzzy inference system (ANFIS). While battery aging proceeds, the system is capable of delivering accurate power prediction not only for room temperature, but also at lower temperatures at which power prediction is most challenging. Due to design property of ANN, the network parameters are adapted on-line to the current battery states (state-of-charge (SoC), state-of-health (SoH), temperature). SoC is required as an input parameter to SoAP module and high accuracy is crucial for a reliable on-line adaptation. Therefore, a reasonable way to determine the battery state variables is proposed applying a combination of several partly different algorithms. Among other SoC boundary estimation methods, robust extended Kalman filter (REKF) for recalibration of amp hour counters was implemented. ANFIS then achieves the SoAP estimation by means of time forward voltage prognosis (TFVP) before a power pulse occurs. The trade-off between computational cost of batch-learning and accuracy during on-line adaptation was optimized resulting in a real-time system with TFVP absolute error less than 1%. The verification was performed on a software-in-the-loop test bench setup using a 53 Ah lithium-ion cell.

• Journal of KIISE:Computer Systems and Theory
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• v.36 no.6
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• pp.543-556
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• 2009

Recently, NAND flash memory is being used as the swap device of virtual memory as well as the file storage of mobile systems. Since temporal locality is dominant in page references of virtual memory, LRU and its approximated CLOCK algorithms are widely used. However, cost of a write operation in flash memory is much larger than that of a read operation, and thus a page replacement algorithm should consider this factor. This paper analyzes virtual memory read/write reference patterns individually, and observes the ranking inversion problem of temporal locality in write references which is not observed in read references. With this observation, we present a new page replacement algorithm considering write frequency as well as temporal locality in estimating write reference behaviors. This new algorithm dynamically allocates memory space to read/write operations based on their reference patterns and I/O costs. Though the algorithm has no external parameter to tune, it supports optimized implementations for virtual memory systems, and also performs 20-66% better than CLOCK, CAR, and CFLRU algorithms.

• The Journal of the Korea Contents Association
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• v.6 no.3
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• pp.46-54
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• 2006

Various schemes for mobility are currently studied in ITU-T, 3GPP, IETF, and so on. Mobility support in NGN for seamless service is necessarily required. Currently proposed mechanisms are MIPV6,0, Q.MMF, and IMS. However the performance comparison of all existing schemes is not examined as yet. That is, the existing methods need to be compared according to each performance parameter. So, in this paper, we investigate and compare the performances of MIPv6,0, Q.MMF, IMS to location registration. In addition, this paper presents the performance comparison of handover latency times. For this, we use NS-2 simulator. As a result of analysis, Q.MMF shown the best performance as it is measured the minimum time and cost. And it has low handover latency time in comparison with other mechanisms.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.11
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• pp.90-94
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• 2008

Recently, a great deal of research is focused on the printed electronics. One of their mainly concerned products is printed RFID tag. RFID technology has attracted researchers and enterprises as a promising method for automatic identification, and they are expected to replace conventional bar codes in inventory tracking and management. The key to successful RFID technology lies in developing low-cost RFID tags and the first step in applying printing technology to RFID systems is to replace antennas that are conventionally produced by etching copper or aluminum. However, due to the printing quality variations, errors, and lower conductivity, the performance of the printed RFID antennas is lower than that of antennas manufactured by conventional etching methods. In this paper, the effect of variations in the printing conditions on the antenna performance is investigated. Three levels for each condition parameter is assumed and effect on the resonant frequency are examined experimentally based on orthogonal array. The most serious factor that affects the resonant frequency of the antenna is the non-uniformity of the edge and the resonant frequency is found to be lower as the non-uniformity increases.

• Journal of Sensor Science and Technology
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• v.9 no.4
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• pp.274-280
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• 2000

This paper deals with an experimental study to apply commercial semiconductors to measure radiation dose rate for gamma ray. Since the low cost, small size, high efficiency and ruggedness of silicon photodiodes make them attractive photodetectors, they coulde be effectively used in measuring any radiation such as gamma ray. Most PN photodiodes show that the reverse current increases when the light is increased. Therefore the depletion region of them have influence on the reverse current, so we choose silicon PIN photodiodes with large depletion region. In order to detect radiation dose rate and then, to apply in developing any gamma ray dosimeter, some examinations and experiments were performed to PIN photodiodes in this work. Two kinds of PIN photodiodes, such as NEC's PH302 and SIEMENS's BPW34, were tested in a Co-60 gamma irradiation facility with a semiconductor parameter analyzer. As a result, we found that such PIN photodiodes present good linearity in diode current characteristics with dose rate. Therefore silicon PIN photodiodes could be suitably used in designing gamma ray dosimeters.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.22 no.3_1spc
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• pp.518-524
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• 2013

Recently, probabilistic assessments of nuclear power plant components have generated interest in the nuclear industries, either for the efficient inspection and maintenance of older nuclear plants or for improving the safety and cost-effective design of newly constructed nuclear plants. In the present paper, the partial safety factor (PSF) of wall-thinned nuclear piping is evaluated based on a reliability index method, from which the effect of each statistical variable (assessment parameter) on a certain target probability is evaluated. In order to calculate the PSF of a wall-thinned pipe, a limit state function based on the load and resistance factor design (LRFD) concept is first constructed. As for the reliability assessment method, both the advanced first-order second moment (AFOSM) method and second-order reliability method (SORM) are employed to determine the PSF of each probabilistic variable. The present results can be used for developing maintenance strategies considering the priorities of input variables for structural integrity assessments of wall-thinned piping, and this PSF concept can also be applied to the optimal design of the components of newly constructed plants considering the target reliability levels.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.