• 대한전자공학회논문지TC
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• 제41권11호
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• pp.81-86
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• 2004

부호분할다중접속(CDMA: Code Division Multiple Access) 시스템의 역방향링크에서 수신 빔 성형 기법을 사용할 경우, 빔 성형 이득을 얻는 반면 전력 제어에 의해 불충분한 파일롯 전력으로 인해 채널 추정이 부정확해진다. 이 논문에서는 상관된 단일-입력 다중-출력(SIMO: Single-Input Multiple-Output) 채널에서 불충분한 파일롯 전력으로 인한 문제를 해결하기 위한 수신 빔 성형 방식을 제안하고자 한다. 제안된 복합형 빔 성형 방식(hybrid beamformer)은 수신 안테나들을 그룹 지어서, 각 그룹 당 수신 빔 방향(DOA: Direction-of-Arrival) 기반의 빔 성형 후에, 그룹별 출력을 최대 비 결합(MRC: Maxim Ratio Combining)하는 방식으로, 공간적으로 상관된 SIMO 채널의 디버시티 이득을 얻으면서 더 정확한 채널추정과 간섭제거 효과를 제공한다. 배열 안테나의 수가 여섯 개 이상인 경우, 복합형 빔 성형 방식은 빔 수신 각 범위(AOS: Angle-of-Spread)가 30°이하에서 일반적인 MRC 빔 성형 방식보다 더 좋은 성능을 보인다.

• Journal of Astronomy and Space Sciences
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• 제33권4호
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• pp.247-256
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• 2016

An analysis of light curves and spectra of observed gamma-ray bursts in gamma-ray ranges is frequently demanded because the prompt emission contains immediate details regarding the central engine of gamma-ray bursts (GRBs). We have revisited the relationship between the collimation-corrected peak luminosity and the spectral lag, investigating the lag-luminosity relationships in great detail by focusing on spectral lags resulting from all possible combinations of channels. Firstly, we compiled the opening angle data and demonstrated that the distribution of opening angles of 205 long GRBs is represented by a double Gaussian function having maxima at ~ 0.1 and ~ 0.3 radians. We confirmed that the peak luminosity and the spectral lag are anti-correlated, both in the observer frame and in the source frame. We found that, in agreement with our previous conclusion, the correlation coefficient improves significantly in the source frame. It should be noted that spectral lags involving channel 2 (25-50 keV) yield high correlation coefficients, where Swift/Burst Alert Telescope (BAT) has four energy channels (channel 1: 15-25 keV, channel 2: 25-50 keV, channel 3: 50-100 keV, channel 4: 100-200 keV). We also found that peak luminosity is positively correlated with peak energy.

• Journal of Communications and Networks
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• 제5권2호
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• pp.150-156
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• 2003

In this paper, an uplink MC-CDMA system incorporating multiuser detection and smart antennas has been considered. The performance of asynchronous as well as synchronous system is studied over a correlated Rayleigh multipath slow fading channel. A simplified array-processing algorithm suitable for slow fading situation is investigated to overcome the heavy computational complexity associated with Eigen solutions. The effect of variable data rate in the system performance is considered and effectiveness of antenna array to handle high data rate is discussed. A brief investigation on the system performance degradation due to correlated channel is also carried out. Based on the extensive simulation carried out, the performance of the asynchronous uplink system is found dramatically improved with antenna array and multiuser detection. Asynchronicity and channel correlation are found to affect the system performance significantly. The investigated simpli- fied algorithm produces similar results as Eigen solutions in slow fading situation with much reduced complexity.

• Journal of Communications and Networks
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• 제7권1호
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• pp.45-53
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• 2005

In this paper, we present a cross-layer analysis of wireless TCP systems over correlated channels. The effects of error correlation on the behavior of link retransmission strategy and the end-to-end throughput of TCP layer are investigated. Based on the cross-layer analysis, an efficient refinement of link layer protocol is proposed by consciously utilizing the information of channel correlations, which leads to the performance improvement of wireless TCP systems.

• 한국통신학회논문지
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• 제35권4C호
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• pp.321-328
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• 2010

본 논문에서는 이동 통신에서 주로 쓰이는 하향/상향링크(downlink/uplink)처럼 상호 간의 상관관계가 존재하는 두 개의 채널에 대한 시뮬레이션 방법을 제안한다. 제안된 방법은 기존 방법의 문제점인 채널 간의 상관관계가 수학적 기준모델과 일치하지 않는 점을 개선한 방법이다. 레일리 페이딩 채널 시뮬레이션 모델은 유한개의 삼각함수의 합을 이용한 SOS(Sum-of-Sinusoids) 방법을 사용하였다. 이 방법은 페이딩 신호의 샘플들을 발생할 때 효율적인 방법으로 알려져 있으며 수학적 기준모델에 대한 정확한 시뮬레이션 결과를 얻을 수 있다. 제안된 모델은 기준모델의 이론적인 상관관계와 시뮬레이터로부터 얻은 채널 간의 상관관계의 오차를 줄이기 위해 MSE를 최소화하는 방식을 이용하면서 평균전력을 이론치와 같게 유지하는 방법이다. 실험결과를 통해 제안한 방법이 기존의 방법보다 기준모델의 수학적 상관관계를 더욱 정확히 모사하는 것을 확인하였다.

• Journal of Communications and Networks
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• 제5권4호
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• pp.309-318
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• 2003

This paper presents an in-depth study of a UWB indoor radio channel between 1 and 9 GHz, which was used for the subsequent development of a new statistical UWB multipath channel model, focusing on short range indoor scenarios. The channel sounding process was carried out covering different indoor environments, such as laboratories, halls or corridors. A combination of new and traditional parameters has been used to accurately model the channel impulse response in order to perform a precise temporal estimation of the received pulse shape. This model is designed specifically for UWB digital systems, where the received pulse is correlated with an estimated replica of itself. The precision of the model has been verified through the comparison with measured data from equivalent scenarios and cases, and highly satisfactory results were obtained.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2007년도 추계종합학술대회
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• pp.328-331
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• 2007

본 논문은 Correlated MIMO-OFDM 페이딩 채널을 위한 클러스터 응답 모델의 용량에 대한 연구이다. 송신기에서 채널 정보를 알고 있는 경우와 채널 정보를 모르는 경우를 고려하여, 수신기의 correlation에 의한 용량과 송${\cdot}$수신기 양쪽의 correlation에 의한 용량을 비교 한다. 결과로부터 수신기의 correlation에 의한 용량이 송${\cdot}$수신기의 correlation에 의한 용량보다 더 좋은 것을 확인 할 수 있다. 또한 Water-filling 방법을 사용하여 송신 안테나에 파워를 할당한 경우 균일한 파워를 할당한 경우보다 Water-filling 이득에 의해 더 큰 용량을 가지는 것으로 나타난다. 그러나 클러스터의 수가 correlation 행렬의 최대 랭크보다 크고 SNR이 높은 영역인 경우 Water-filling에 의한 이득이 거의 없음을 보인다.

• International Journal of Internet, Broadcasting and Communication
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• 제14권3호
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• pp.79-84
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• 2022

Towards the sixth generation (6G) mobile networks, spectrum and energy efficiency of non-orthogonal multiple access (NOMA) transmissions in the fifth generation (5G) wireless system have been improved by intelligent reflecting surface (IRS) technologies. However, the reflecting devices of an IRS tend to be correlated because they are placed close on the surface each other. In this paper, we present an analysis on the correlated IRS in NOMA cellular networks. Specifically, we consider the bit-error rate (BER) performances for correlated-IRS in NOMA networks. First, based on the central limit theorem, we derive an approximate analytical expression of the BER for correlated-IRS NOMA systems, by using the second moment of the channel gain. Then we validate the proposed analytical BER by Monte Carlo simulations, and show that they are in good agreement. In addition, we also show numerically the BER improvement of the correlated-IRS NOMA over the conventional independent-IRS NOMA.

• Journal of information and communication convergence engineering
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• 제9권6호
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• pp.738-742
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• 2011

This paper has studied drain induced barrier lowering(DIBL) for Double Gate MOSFET(DGMOSFET) using analytical potential model. Two dimensional analytical potential model has been presented for symmetrical DGMOSFETs with process parameters. DIBL is very important short channel effects(SCEs) for nano structures since drain voltage has influenced on source potential distribution due to reduction of channel length. DIBL has to be small with decrease of channel length, but it increases with decrease of channel length due to SCEs. This potential model is used to obtain the change of DIBL for DGMOSFET correlated to channel doping profiles. Also device parameters including channel length, channel thickness, gate oxide thickness and doping intensity have been used to analyze DIBL.

• 전자공학회논문지A
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• 제28A권12호
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• pp.53-58
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• 1991

Hot-carrier induced degradation has been studied for the BF$_2$ ion-implanted surface-channel LDD(P$^{+}$ polysilicon gate) PMOSFET in comparison to the buried-channel structure(N$^{+}$ polysilicon gate) PMOSFET. The conditions for maximum degradation better correlated to I$_{g}$ than I$_{sub}$ for both PMOSFET's. Due to the use of LDD structure on SC-PMOSFET, the substrate current for SC-PMOSFET was shown to be smaller than that of BC-PMOSFET. The gate current was smaller as well, due to the gate material work-function difference between p$^{+}$ and n$^{+}$ polysilicon gates. From the results, it was shown that the surface-channel LDD PMOSFET is more resistant to short channel effect than the buried-channel PMOSFET.