• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.263-266
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• 2000

Effects of excess Pb(50 mole ％) on the crystallization properties of amorphous PZT thin films on the glass substrates by post-annealing in oxygen ambient were investigated to lower the crystallization temperature of the PZT thin films with a single perovskite phase. The PZT thin films(350nm) were prepared on Pt/Ti/corning glass(1737) substrates. The PZT thin films and bottom electrode were deposited by RF magnetron sputtering. Crystallization properties of PZT thin films were strongly dependent on RTA(Rapid Thermal Annealing) temperature. We were able to obtain a perovskite structure of PZT at 600$^{\circ}C$ for 10min. After thermal treatments were done, electrical properties such as I-V, P-E, and fatigue were measured.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.80-83
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• 2000

The post-annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},\;Ti_{0.48})O_3$) thin films($4000{\AA}$) have been investigated for a structure of PZT/Pt/Ti/Coming glass(1737). Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at $650^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were $8.1[{\mu}C/cm^2]$, 95[kV/cm] respectively. Polarization value decrease about 25% after $10^9$ cycles.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권1호
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• pp.24-29
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• 2001

PZT thin films(4000A) have prepared onto 1737 corning glass and ITO coated glass substrates with a RF magnetron sputtering system using Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$ceramic target, Electrical properties of PZT thin film deposited after ITO coated glass were P${\gamma}$ was decreased by 25% after 109cycles, respectively. With the RTA treatment duration and temperature increased, the crystallization of PZT thin films were enhanced, however, the leakage current density became higher. The leakage current mechanism was found to be space charge conduction by the defects and oxygen vacancies existing in PZT and PZT/bottom electrode interfaces.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1818-1820
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• 1999

This paper presents direct ${\mu}c$-Si:H thin film growth on the glass substrates using RPCVD system (remote plasma chemical vapor deposition) in low temperature. Hydrogenated micro-crystalline silicon deposited by RPCVD system in low temperature is very useful material for photovoltaic devices, sensor applications, and TFTs (thin film transistors). Varying the deposition conditions such as substrate temperature, gas flow rate, reactive gas ratio $(SiH_4/H_2)$, total chamber pressure, and rf power, we deposited ${\mu}c$-Si:H thin films on the glass substrates (Corning glass 1737). And then we measured the structural and electrical properties of the films.

• 한국세라믹학회지
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• 제42권7호
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• pp.497-502
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• 2005

This study investigated the effects of the substrate and powder content on the fabrication of SiO$_{2}$ photonic crystals by evaporation method. Photonic crystals were self-assembled on quartz, Corning 1737 glass, slide glass, and ITa glass to verify the effects of the wetting angle and surface morphology. The powder contents of the solution were varied from 0.2 to 2.0 wt$\%$. The number of photonic crystal layers increased according to the decrease of wetting angle and surface roughness. The resultant photonic crystals showed the best optical characteristics when the number of photonic crystal layers was within 40 and 50. In addition, the intensity peak of Fabry¡?Perot fringes increased when the wetting angle was large and the particle size was small. Photonic crystals coated on ITO glass showed the highest reflectance peak of 63$\%$ relative intensity.

• 한국재료학회지
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• 제11권3호
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• pp.178-184
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• 2001

rf-마그네트론 스퍼터링 방법을 이용하여 높은 광투과성을 지니며 c-축 배향된 KLN 박막을 제작하였다. 하소 및 소결 과정을 거쳐서 균일하고 안정한 상태의 KLN 타겟을 제조하였다. KLN 타겟은 화학량론적인 조성 및 K가 30%, 60%, 그리고 Li가 각각 15%, 30% 과량된 조성을 사용하였으며 K와 Li의 휘발을 방지하기 위하여 낮은 온도에서 소결시켰다. 제조된 타겟을 사용하여 rf-magnetron sputtering 방법으로 박막을 제조하였으며, 이때 K가 60% Li가 30% 과량된 타겟으로 제조할 때 단일상의 KLN 박막을 얻을 수 있었다. KLN 박막은 코닝 1737 기판 위에서 우수한 결정성과 높은 c-축 배향성을 나타내었으며, 이때 박막의 성장조건은 고주파 전력 100 W, 공정 압력 150 mTorr, 기판 온도 58$0^{\circ}C$였다. 가시광 영역에서 박막의 투과율은 약 90% 이고, 흡수는 333 nm에서 발생하였으며 632.8 nm에서 박막의 굴절율은 1.93이었다.

• 한국전기전자재료학회논문지
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• 제14권5호
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• pp.370-375
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• 2001

PZT thin films (3500${\AA}$) ahve been prepared onto Pt/Ti/corning glass (1737) substrates with a RF magnetron sputtering system using Pb$\sub$1.50/(Zr$\sub$0.52/,Ti$\sub$0.48)O$_3$ ceramic target. We used two-step annealing techniques, PZT thin films were grown at a 300$^{\circ}C$ substrate temperature and then subjected to an RTA treatment. In case of 500$^{\circ}C$ RTA temperature show pyrochlore phase. The formation of Perovskite phase started above 600$^{\circ}C$ and PZT thin films generated (101) preferred orientation. As the RTA time and temperature increased, crystallization of PZT films were enhanced. The PZT capacitors fabricated at 650$^{\circ}C$ for 10 minutes RTA treatment showed remanent polarization 30 ${\mu}$C/$\textrm{cm}^2$, saturation polarization 42${\mu}$C/$\textrm{cm}^2$, coercive field 110kV/cm, leakage current density 2.83x10$\^$-7/A/$\textrm{cm}^2$, remanent polarization were decreased by 30% after 10$\^$9/ cycles.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 춘계학술대회
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• pp.154-159
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• 2005

Low RF power density was used for preparing transparent conducting AI-doped ZnO (AZO) thin films by RF Magnetron Sputtering on Corning 1737 glass. The dependence of films' structural, optical and electrical properties on sputtering gas, film's thickness and substrate temperature were investigated. Low percent of incorporated H2 in Ar sputtering gas has proven to reduce film's resistivity and sheet resistance as low as $4.1\times10^{-3}{\Omega}.cm$. It also formed new preferred peaks orientation of (101) and (100) which indicated that the c-axis of AZO films was parallel to the substrate. From UN-VIS-NIR Spectrophotometer analysis, it further showed high optical transmittance at about $\~ 90\%$ at visible light spectra (400-700nm).

• 한국전기전자재료학회논문지
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• 제14권1호
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• pp.34-42
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• 2001

The influences of substrate temperature were studied when fabricating KLN thin film on amorphous substrate using an rf-magnetron sputtering method. Investigating the vaporization temperature of the each element, the excess ratio of target and the optimum deposition conditions were effectively selected when thin filmizing a material which have elements with large difference fo vaporization temperature. In order to compensate K and Li which have lower vaporization temperatures than Nb, KLN target of composition excess with K of 60% and Li of 30% was used. KLN thin film fabricated on Corning 1737 glass substrate had single KLN phase above 58$0^{\circ}C$ of substrate temperature and crystallized to c-axis direction. The optimum conditions were rf power of 100W, process pressure of 150mTorr, and substrate temperature of $600^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.91-92
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• 2006

Aluminum-doped zinc oxide (AZO) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with indium tin oxide (ITO). AZO films have been deposited on glass (corning 1737) substrates by RF magnetron sputtering system. The electrical resistivity of AZO films was $1.81{\times}10^{-2}{\Omega}cm$ and the average transmittance in the visible range 400-800 nm was more than 76% Organic light-emitting diodes (OLEDs) with AZO/TPD/$Alq_3$/Al configuration were fabricated. The current density-voltage properties of devices were studied and compared with ITO devices fabricated under the same conditions.