• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.246.1-246.1
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• 2014

Over the past several years, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED). In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[1] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 8 V, the QDLED device emitted spectrally orange color lights with high luminance up to 2450 cd/m2, and showed current efficacy of 0.6 cd/A, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.432.2-432.2
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• 2014

Recently, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED)[1]. In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[2] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QD LED, two kinds of hybrid organic materials, [poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo)(F8BT) + poly(N,N'-bis (4-butylphenyl)-N,N'-bis(phenyl)benzidine (poly-TPD)] and [4,4'-N,N'-dicarbazole-biphenyl (CBP) + poly-TPD], were adopted as hole transport layer having high highest occupied molecular orbital (HOMO) level for improving hole transport ability. At a low-operating voltage of 8 V, the device emits orange and red spectral radiation with high brightness up to 2450 and 1420 cd/m2, and luminance efficacy of 1.4 cd/A and 0.89 cd/A, respectively, at 7 V applied bias. Also, the carrier transport mechanisms for the QD LEDs are described by using several models to fit the experimental I-V data.

• 한국분말재료학회지
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• 제24권1호
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• pp.1-5
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• 2017

We have investigated the washing method of as-synthesized CdSe/ZnS core/shell structure quantum dots (QDs) and the effective surface passivation method of the washed QDs using PMMA. The quantum yield (QY%) of as-synthesized QDs decreases with time, from 79.3% to 21.1%, owing to surface reaction with residual organics. The decreased QY% is restored to the QY% of as-synthesized QDs by washing. However, the QY% of washed QDs also decreases with time, owing to the absence of surface passivation layer. On the other hand, the PMMA-treated QDs maintained a relatively higher QY% after washing than that of the washed QDs that were kept in toluene solution for 30 days. Formation of the PMMA coating layer on CdSe/ZnS QD surface is confirmed by HR-TEM and FT-IR. It is found that the PMMA surface coating, when combined with washing, is useful to be applied in the storage of QDs, owing to its long-term stability.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.217-217
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• 2011

Recently, demand for thermally stable metal nanoparticles suitable for chemical reactions at high temperatures has increased to the point to require a solution to nanoparticle coalescence. Thermal stability of metal nanoparticles can be achieved by adopting core-shell models and encapsulating supported metal nanoparticles with mesoporous oxides [1,2]. However, to understand the role of metal-support interactions on catalytic activity and for surface analysis of complex structures, we developed a novel catalyst design by coating an ultra-thin layer of titania on Pt supported silica ($SiO_2/Pt@TiO_2$). This structure provides higher metal dispersion (~52% Pt/silica), high thermal stability (~600$^{\circ}C$) and maximization of the interaction between Pt and titania. The high thermal stability of $SiO_2/Pt@TiO_2$ enabled the investigation of CO oxidation studies at high temperatures, including ignition behavior, which is otherwise not possible on bare Pt nanoparticles due to sintering [3]. It was found that this hybrid catalyst exhibited a lower activation energy for CO oxidation because of the metal-support interaction. The concept of an ultra-thin active metal oxide coating on supported nanoparticles opens-up new avenues for synthesis of various hybrid nanocatalysts with combinations of different metals and oxides to investigate important model reactions at high-temperatures and in industrial reactions.

• Korean Chemical Engineering Research
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• 제46권4호
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• pp.669-675
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• 2008

카본블랙은 토너수지, 잉크 및 복합재료 등에 광범위하게 산업적으로 응용되고 있다. 본 연구에서는 분산 안정성을 증대시키기 위하여 카본블랙을 상 이동 촉매(phase transfer catalyst)를 이용한 상온에서의 산화반응을 통하여 카본블랙(CB)-수산화기(OH)를 제조하여 이에, silane coupling-agent인 p-methylacryloxypropyltrimethoxysilane를 grafting시켜 말단에 이중결합을 가진 구조를 도입하였다. 이렇게 표면개질된 카본블랙을 미니유화중합법을 이용하여 고분자로 캡슐화를 진행하였다. 이러한 과정을 통하여 평균직경 100~500 nm 크기의 하이브리드 미립자를 제조하였다. 중합과정에 있어서 카본블랙의 표면 개질의 영향, 모노머의 종류, 개시제 및 유화제의 캡슐화 반응에 미치는 영향을 연구하였다.

• Bulletin of the Korean Chemical Society
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• 제31권12호
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• pp.3593-3599
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• 2010

In an original effort, this lab attempted to employ polystyrene nanoparticles as a template for the synthesis of ordered and highly porous macroporous $SiO_2$ thin films, utilizing their high combustion temperature and narrow size distribution. However, polystyrene nanoparticle thin films were not obtained due to the low interaction between individual particles and between the particle and silicon substrate. However, polystyrene-polyacrylic acid (PS-AA) colloidal particles of a core-shell structure were synthesized by a one-pot miniemulsion polymerization approach, with hydrophilic polyacrylic acid tails on the particle surface that improved interaction between individual particles and between the particle and silicon substrate. The PS-AA thin films were spin-coated in the thickness ranges from monolayer to approximately $1.0\;{\mu}m$. Using the PS-AA thin films as sacrificial templates, macroporous $SiO_2$ thin films were successfully synthesized by vapor deposition or conventional solution sol-gel infiltration methods. Inspection with field emission scanning electron microscopy (FE-SEM) showed that the macroporous $SiO_2$ thin films consist of interconnected air balls (~100 nm). Typical macroporous $SiO_2$ thin films showed ultralow refractive indices ranging from 1.098 to 1.138 at 633 nm, according to the infiltration conditions, which were confirmed by spectroscopy ellipsometry (SE) measurements. This research shows how the synthetic control of the macromolecule such as hydrophilic polystyrene nanopaticles and silicate sol precursors innovates the optical properties and processabilities for actual applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.232-232
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• 2010

Recently light emitting diodes (LEDs) have been expected as the new generation light sources because of their advantages such as small size, long lifetime and energy-saving. GaN, as a wide band gap material, is widely used as a material of LEDs and GaN nanorods are the one of the most widely investigated nanostructure which has advantages for the light extraction of LEDs and increasing the active area by making the cylindrical core-shell structure. Lately GaN nanorods are fabricated by various techniques, such as selective area growth, vapor-liquid-solid (VLS) technique. But these techniques have some disadvantages. Selective area growth technique is too complicated and expensive to grow the rods. And in the case of VLS technique, GaN nanorods are not vertically aligned well and the metal catalyst may act as the impurity. So we just tried to grow the GaN nanorods on Si substrate without catalyst to get the vertically well aligned nanorods without impurity. First we deposited the AlN buffer layer on Si substrate which shows more vertical growth mode than sapphire substrate. After the buffer growth, we flew trimethylgallium (TMGa) as the III group source and ammonia as the V group source. And during the GaN growth, we kept the ammonia flow stable and periodically changed the flow rate of TMGa to change the growth mode of the nanorods. Finally, as the optimization, we changed the various growth conditions such as the growth temperature, the working pressure, V/III ratio and the doping level. And we are still in the process to reduce the diameter of the nanorods and to extend the length of the nanorods simultaneously. In this study, we focused on the shape changing of GaN nanorods with different growth conditions. So we confirmed the shape of the nanorods by scanning electron microscope (SEM) and carried out the Photoluminescence (PL) measurement and x-ray diffraction (XRD) to examine the crystal quality difference between samples. Detailed results will be discussed.

• 암석학회지
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• 제22권3호
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• pp.219-233
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• 2013

부산광역시 동부의 장산화산암체는 화산함몰체로 알려져 있고, 화산함몰체 외각부를 따라 구과상 유문암이 $60^{\circ}{\sim}90^{\circ}$의 각도로 수직유상구조를 보여주며 환상암맥으로 나타난다. 구과의 직경은 수 mm에서 2.8 cm 이상이며, 평균적으로 5~10 mm로 측정되었다. 이들 구과는 하나의 핵을 중심으로 방사상을 나타내는 단식 구과형과 육안상 흰색을 띠는 각을 가지면서 핵 부분을 중심으로 방사상을 나타내는 방사상 단식 구과형으로 비교적 단순한 형태를 보여주며, 이들 구과들이 서로 인접하여 합체된 포도송이와 같은 집합체를 보여주기도 한다. 구과의 동심원상 핵 부분에 대한 전자현미분석 결과, 은미정질 기질부 물질의 성분은 주로 $SiO_2$가 거의 82% 이상, $Al_2O_3$는 7~10%, $Na_2O+K_2O$는 8% 이하의 실리카 물질과 장석(새니딘)의 미세한 섬유상 교생으로 나타났다. 구과에 대한 X-선 회절분석 결과, 석영, 새니딘, 앨바이트 그리고 소규모의 운모, 카오린, 녹니석으로 구성되며, X-선 면분석 결과, 핵 부분은 $SiO_2$가 풍부하며, 각 부분은 $Na_2O$ 또는 $K_2O$, $Al_2O_3$가 풍부하였다. 장산콜드론의 유문암 암맥에서 나타나는 구과의 깃털형과 비등형 결정 형태는 마그마 관입에 의한 이동속도보다 유리질 물질로부터 탈유리화작용이 더 빠른 속도로 진행되었고, 비교적 정체된 상태에서 급속한 냉각으로 형성되었음을 지시한다. 구과들은 고규산(75.4~75.7 wt.%) 유문암질 마그마로부터 유래되었다.

• 폴리머
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• 제39권1호
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• pp.56-63
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• 2015

본 연구의 목적은 다이이소시아네이트 화합물을 함유하는 마이크로캡슐을 제조하고 자기치유형 보호코팅재에 적용하여 공기 중 수분에 의한 자기치유 기능을 평가하는 것이다. 다이이소시아네이트 화합물의 공기 중 수분과의 반응 거동을 조사함으로써 치유 물질로서의 가능성을 확인하였다. 폴리우레탄을 캡슐막으로 하여 이소포론 다이이소시아네이트(isophorone diisocyanate, IPDI)의 마이크로캡슐화를 계면중합법에 의해 수행하였다. 마이크로캡슐의 생성여부는 FTIR 및 NMR으로 확인하였고, 마이크로캡슐의 직경 및 크기 분포, 표면 형상과 캡슐막의 두께는 광학현미경과 FE-SEM을 통하여 관찰하였다. 교반속도 및 다이올 구조 변화에 따른 마이크로캡슐의 특성 변화를 조사하였다. 자기치유형 보호코팅재를 제조하여 스크래치를 형성시킨 후 광학현미경으로 관찰한 결과, 스크래치 형성 직후 스크래치가 지나가는 자리에 위치하는 마이크로캡슐이 깨지면서 심물질이 흘러나와 스크래치를 메워주는 것을 확인하였다. 또한 CRC 보드에 마이크로캡슐을 함유한 자기치유 코팅재를 제조하여 스크래치 형성 후 상대습도 68~89%의 공기 중에 48시간 동안 방치한 후 SEM 분석 및 내투수 테스트를 진행한 결과, 스크래치가 자기치유된 것이 확인되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.