• Title/Summary/Keyword: Copper deposition

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Deposition of copper oxide by reactive magnetron sputtering

  • Lee, Jun-Ho;Lee, Chi-Yeong;Lee, Jae-Gap
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.49.2-49.2
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    • 2010
  • Copper oxide films have been deposited on silicon substrates by direct current magnetron sputtering of Cu in O2 / Ar gas mixtures. The target oxidation occurring as a result of either adsorption or ion-plating of reactive gases to the target has a direct effect on the discharge current and the resulting composition of the deposited films. The kinetic model which relates the target oxidation to the discharge current was proposed, showing the one-to-one relationship between discharge current characteristics and film stoichiometry of the deposited films.

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The Effect of Impurities on Copper Deposition in Copper Electrorefining (동 전해정련시 불순물 성분이 전기동 전착에 미치는 영향)

  • Kim, Do-Hyeong;Kim, Yong-Hwan;Kim, Gwang-Ho;Jeong, Won-Seop
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2009.05a
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    • pp.121-121
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    • 2009
  • 구리 전해정련 과정에서 전해액 중의 Arsenic과 같은 불순물 성분이 전기동의 전착에 미치는 영향을 확인하고, 전해액 중의 최대 허용 농도를 도출하고자 하였다. 전해정련 과정에서 분순물 성분이 전기동 전착에 미치는 영향을 주사전자현미경(SEM), X-선 회절(X-ray diffraction) 및 전기화학적 분석을 통해 수행하였다.

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Electrophoretic Deposition for the Growth of Carbon nanofibers on Ni-Cu/C-fiber Textiles

  • Nam, Ki-Mok;Mees, Karina;Park, Ho-Seon;Willert-Porada, Monika;Lee, Chang-Seop
    • Bulletin of the Korean Chemical Society
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    • v.35 no.8
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    • pp.2431-2437
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    • 2014
  • In this study, Ni, Ni-Cu and Ni/Cu catalysts were deposited onto C-fiber textiles via the electrophoretic deposition method, and the growth characteristics of carbon nanofibers on the deposited catalyst/C-fiber textiles were investigated. The catalyst deposition onto C-fiber textiles was accomplished by immersing the C-fiber textiles into Ni or Ni-Cu mixed solutions, producing the substrate by post-deposition of Ni onto C-fiber textiles with pre-deposited Cu, and passing it through a gas mixture of $N_2$, $H_2$ and $C_2H_4$ at $700^{\circ}C$ to synthesize carbon nanofibers. For analysis of the characteristics of the synthesized carbon nanofibers and the deposition pattern of catalysts, SEM, EDS, BET, XRD, Raman and XPS analysis were conducted. It was found that the amount of catalyst deposited and the ratio of Ni deposition in the Ni-Cu mixed solution increased with an increasing voltage for electrophoretic deposition. In the case of post-deposition of Ni catalyst onto substrates with pre-deposited Cu, both bimetallic catalyst and carbon nanofibers with a high level of crystallizability were produced. Carbon nanofibers yielded with the catalyst prepared in Ni and Ni-Cu mixed solutions showed a Y-shaped morphology.

Effects of Plasma Pretreatment of the Cu Seed Layer on Cu Electroplating (Cu seed layer 표면의 플라즈마 전처리가 Cu 전기도금 공정에 미치는 효과에 관한 연구)

  • O, Jun-Hwan;Lee, Seong-Uk;Lee, Jong-Mu
    • Korean Journal of Materials Research
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    • v.11 no.9
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    • pp.802-809
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    • 2001
  • Electroplating is an attractive alternative deposition method for copper with the need for a conformal and conductive seed layer In addition, the Cu seed layer should be highly pure so as not to compromise the effective resistivity of the filled copper interconnect structure. This seed layer requires low electrical resistivity, low levels of impurities, smooth interface, good adhesion to the barrier metal and low thickness concurrent with coherence for ensuring void-free fill. The electrical conductivity of the surface plays an important role in formation of initial Cu nuclei, Cu nucleation is much easier on the substrate with higher electrical conductivities. It is also known that the nucleation processes of Cu are very sensitive to surface condition. In this study, copper seed layers deposited by magnetron sputtering onto a tantalum nitride barrier layer were used for electroplating copper in the forward pulsed mode. Prior to electroplating a copper film, the Cu seed layer was cleaned by plasma H$_2$ and $N_2$. In the plasma treatment exposure tome was varied from 1 to 20 min and plasma power from 20 to 140W. Effects of plasma pretreatment to Cu seed/Tantalum nitride (TaN)/borophosphosilicate glass (BPSG) samples on electroplating of copper (Cu) films were investigated.

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Determination of Ultra Trace Levels of Copper in Whole Blood by Adsorptive Stripping Voltammetry

  • Attar, Tarik;Harek, Yahia;Larabi, Lahcen
    • Journal of the Korean Chemical Society
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    • v.57 no.5
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    • pp.568-573
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    • 2013
  • A selective and sensitive method for simultaneous determination of copper in blood by adsorptive differential pulse cathodic stripping voltammetry is presented. The procedure involves an adsorptive accumulation of Cu(II)-ETSC (4- ethyl-3-thiosemicarbazide) on a hanging mercury drop electrode, followed by a stripping voltammetry measurement of reduction current of adsorbed complex at about -715 mV. The optimum conditions for the analysis of copper (II) ion are : pH 10.3, concentration of 4-ethyl-3-thiosemicarbazide $3.25{\times}10^{-6}$ M and an accumulation potential of -100 mV. The peak current is proportional to the concentration of copper over the range 0.003-125 ng/mL with a detection limit of 0.001 ng/mL and an accumulation time of 60 s. Moreover, with the use of the proposed method, there is a considerable improvement in the detection limit, the linear dynamic range and the deposition time, compared with the methods of adsorptive stripping voltammetry for the determination of copper. The developed method was validated by analysis of whole blood certified reference materials.

Effect of Kind and Thickness of Seed Metal on the Surface Morphology of Copper Foil (Seed 금속의 종류와 두께에 따른 구리 전착층의 표면형상에 미치는 영향)

  • Woo, Tae-Gyu;Park, Il-Song;Seol, Kyeong-Won
    • Korean Journal of Materials Research
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    • v.17 no.5
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    • pp.283-288
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    • 2007
  • This study aimed to investigate the effects of the seed layer with copper electroplating on the surface morphology of copper foil. Three kinds of seed metal such as platinum, palladium, Pt-Pd alloy were used in this study. Electrodeposition was carried out with the constant current density of 200 $mA/cm^2$ for 68 seconds. Electrochemical experiments, in conjunction with SEM, XRD, AFM and four-point probe, were performed to characterize the morphology and mechanical characteristics of copper foil. Large particles were observed on the surface of the copper deposition layer when a copper foil was electroplated on the 130 nm thickness of Pd, Pt-Pd seed layer. However, a homogeneous surface, low resistivity was obtained when the 260 nm thickness of Pt, Pt-Pd alloy seed layer was used. The minimum value of resistivity was 2.216 ${\mu}{\Omega}-cm$ at the 260 nm thickness of Pt-Pd seed layer.

Characteristic of Copper Films on PET Substrate Deposited by Cyclic Operation of RF-magnetron-sputtering Coupled with Continuous Operation of ECR-CVD (연속 ECR-CVD 조업하에 RF-magnetron-sputter의 싸이클조업을 통해 PET위에 올려진 구리박막의 특성)

  • Myung JongYun;Jeon Bupju;Byun Dongjin;Lee Joongkee
    • Korean Journal of Materials Research
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    • v.15 no.7
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    • pp.465-472
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    • 2005
  • Preparation of copper film on PET substrate was carried out by cyclic operation of RF-magnetron­sputtering under continuous operation of ECR-CVD. The purpose of this study is aimed to an increase in deposition rate with keeping excellent adhesion between copper film and PET. In order to optimize the sputtering time under continuous ECR-CVD, cyclic operation concept is employed. By changing parameters of cyclic operation such as split of e and cycle time of A, the characteristics and thickness of the deposited copper film are controlled. As $\theta$ value increase, film thickness could confirm to increase and its surface resistivity value decreases. The highest adhesive strength appears at $\theta=0.33$ and cycle time of 30 min. The uniformity of copper film shows $5\%$ in our experimental range.

Graphene Growth on the Cobalt and Nickel Sputtered Cu foil Depending on the Annealing Time (코발트와 니켈이 스퍼터링된 구리 포일에서 어닐링 시간에 따른 그래핀 성장)

  • Oh, Ye-Chan;Lee, Woo-Jin;Kim, Sang-Ho
    • Journal of the Korean institute of surface engineering
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    • v.54 no.3
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    • pp.124-132
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    • 2021
  • Graphene which grown on the cobalt or nickel sputtered copper foil depending on the annealing time was studied. Graphene on the copper foil grown by chemical vapor deposition was compared to those on cobalt or nickel sputtered copper foil by using a RF (Radio Frequency) magnetron sputtering at room temperature. FLG(few-layer graphene) was identified independent of substrates by Raman and X-Ray Photoelectron Spectroscopy analyses. On copper foil, size and area fraction of the graphene growth increased until 30 minutes annealing and then didn't changed. Comparing to that, graphene on the cobalt refined till 50 minutes annealing, after then the effect disappeared which means a similar shape to that on copper foil. On nickel the graphene refined irrespective of annealing time that is possibly because of the complete solid solution of nickel with copper.

Simulation and Characteristic Measurement with Sputtering Conditions of Triode Magnetron Sputter

  • Kim, Hyun-Hoo;Lim, Kee-Joe
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.1
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    • pp.11-14
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    • 2004
  • An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.