• 한국환경과학회지
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• 제24권11호
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• pp.1501-1511
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• 2015

As essential trace elements, copper and zinc play important roles in many physiological events in plants. In excess, however, these elements can limit plant growth. This study selected a heavy metal-tolerant plant by analyzing seed germination and biomass of alfalfa (Medicago sativa), canola (Brassica campestris subsp. napus var. nippo-oleifera), Chinese corn (Setaria italica), and a sorghum-sudangrass hybrid (Sorghum bicolor ${\times}$ S. sudanense), and determined heavy metal uptake capacity by analyzing biomass, chlorophyll a fluorescence, and heavy metal contents under high external copper or zinc levels. The seed germination rate and biomass of the sorghum-sudangrass hybrid were higher under copper or zinc stress compared to the other three plants. The plant biomass and photosynthetic pigment contents of the sorghum-sudangrass hybrid seedlings were less vulnerable under low levels of heavy metals (${\leq}50ppm$ copper or ${\leq}400ppm$ zinc). The maximum quantum yield of PSII ($F_v/F_m$) and the maximum primary yield of PSII ($F_v/F_o$) decreased with increasing copper or zinc levels. Under high copper levels, the decline in $F_v/F_m$ was caused only by the decline in $F_m$, and was accompanied by an increase in non-photochemical quenching (NPQ). The $F_v/F_m$ declined under high levels of zinc due to both a decrease in the maximum fluorescence ($F_m$) and an increase in the initial fluorescence ($F_o$), and this was accompanied by a marked decrease in photochemical quenching (qP), but not by an increase in NPQ. Accumulations of copper and zinc were found in both aboveand below-ground parts of plants, but were greater in the below-ground parts. The uptake capacity of the sorghum-sudangrass hybrid for copper and zinc reached 4459.1 mg/kg under 400 ppm copper and 9028.5 mg/kg under 1600 ppm zinc. Our results indicate that the sorghum-sudangrass hybrid contributes to the in situ phytoremediation of copper or zinc polluted soils due to its high biomass yield.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• 보존과학회지
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• 제36권3호
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• pp.178-186
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• 2020

동록(銅綠)은 고문헌에 기록되어 있는 전통적인 인공안료 중 하나이다. 고문헌에 기록되어 있는 제법에 따르면, 동록은 동(銅)을 초(醋)를 이용해 부식시키고 생성된 녹을 긁어모아 제조한다. 삼국시대 이후 청동, 황동 등의 동합금을 이용한 다양한 동기(銅器)가 사용되었으며, 채색문화재의 안료분석 연구를 통해 녹색안료에서 구리뿐만 아니라 주석, 아연, 납 등의 검출이 확인되었다. 이와 같은 자료를 바탕으로 구리 및 청동, 황동 등의 구리합금으로 5종의 동록안료를 제조하고 특성 규명을 위한 분석을 수행한 결과, 제조된 동록안료는 청록색을 나타내며, 제조에 사용된 동판의 종류에 따라 색상, 입자형태, 흡유량 등 물성에 차이를 보였다. 또한, 동록안료의 주요 구성원소는 Cu, Sn, Zn, Pb 등으로, 각 원소의 함유 비율은 사용된 동판의 합금 종류에 영향을 받는 것을 알 수 있었다. 동록안료를 구성하는 주요 구성광물은 동판의 종류에 상관없이 호가나이트[hoganite, Cu(CH₃COO)₂·H₂O]로 확인되었다. 촉진내후성 시험을 통해 안정성을 평가한 결과, 동록안료는 전체적으로 빠르게 색변화가 나타나 안정성이 낮은 것으로 보이며, 특히 납 성분을 함유한 경우에는 더 빠르게 색변화가 나타나 상대적으로 취약한 모습을 보였다.

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 1999년도 제2회 총회 및 춘계학술발표회
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• pp.59-59
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• 1999

• Journal of the Optical Society of Korea
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• 제20권5호
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• pp.601-606
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• 2016

In this study, in order to analyze the low-temperature sintering process of silver and copper nanoparticles, we calculate their melting temperatures and surface melting temperatures with respect to particle size. For this calculation, we introduce the concept of mean-squared displacement of the atom proposed by Shi (1994). Using a parameter defined by the vibrational component of melting entropy, we readily obtained the surface and bulk melting temperatures of copper and silver nanoparticles. We also calculated the absorption cross-section of nanoparticles for variation in the wavelength of light. By using the calculated absorption cross-section of the nanoparticles at the melting temperature, we obtained the laser threshold energy for the sintering process with respect to particle size and wavelength of laser. We found that the absorption cross-section of silver nanoparticles has a resonant peak at a wavelength of close to 350 nm, yielding the lowest threshold energy. We calculated the intensity distribution around the nanoparticles using the finite-difference time-domain method and confirmed the resonant excitation of silver nanoparticles near the wavelength of the resonant peak.

• 한국전기전자재료학회논문지
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• 제27권7호
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• pp.452-457
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• 2014

Copper manganite thin films were fabricated on $SiN_x/Si$ substrate by metal organic decomposition (MOD) process. They were burned-out at $400^{\circ}C$ and annealed at various temperatures ($400{\sim}800^{\circ}C$) for 1h in ambient atmosphere. Their micro-structure and negative temperature coefficient of resistance (NTCR) characteristics were analyzed for micro-bolometer application. The copper manganite film with a cubic spinel structure was well developed at $500^{\circ}C$ which confirmed by XRD and HRTEM analysis. It showed a low resistivity ($47.5{\Omega}{\cdot}cm$) at room temperature and high NTCR characteristics of $-4.12%/^{\circ}C$ and $-2.15%/^{\circ}C$ at room temperature and $85^{\circ}C$, implying a good thin film for micro-bolometer application. Furthermore, its crystallinity was enhanced with increasing temperature to $600^{\circ}C$. However, the appearance of secondary phase at temperatures higher than $600^{\circ}C$ lead to deteriorate the NTCR characteristics.

• Restorative Dentistry and Endodontics
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• 제9권1호
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• pp.101-106
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• 1983

It was the purpose of this study to investigate the fracture mode of dental amalgam by observing the crack propagation, and to relate this to the microstructure of the amalgam. Caulk 20th Century Regular, Caulk Spherical, Dispersalloy, and Tytin amalgam alloys were used for this study. After each amalgam alloy and Hg measured exactly by the balance was triturated by the mechanical amalgamator (Capmaster, S.S. White), the triturated mass was inserted into the cylindrical metal mold which was 4 mm in diameter and 12 mm in height and was pressed by the Instron Universal Testing Machine at the speed of 1mm/min with 120Kg. The specimen removed from the mold was stored in the room temperature for a week. This specimen was polished with the emery papers from #100 to #200 and finally on the polishing cloth with 0.06${\mu}Al_2O_3$ powder suspended in water. The specimen was placed on the Instron testing machine in the method similar to the diametral tensile test and loaded at the crosshead speed of 0.05mm/min. The load was stopped short of fracture. The cracks on the polished surface of specimen was examined with scanning electron microscope (JSM-35) and analyzed by EPMA (Electron probe microanalyzer). The following results were obtained. 1. In low copper lathe-cut amalgam, the crack went through the voids and ${\gamma}_2$ phase, through the ${\gamma}_1$ phase around the ${\gamma}$ particles. 2. In low copper spherical amalgam, it was observed that the crack passed through the ${\gamma}_2$ and ${\gamma}_1$ phase, and through the boundary between the ${\gamma}_1$ and ${\gamma}$ phase. 3. In high copper dispersant (Dispersalloy) amalgam, the crack was found to propagate at the interface between the ${\gamma}_1$ matrix and reaction ring around the dispersant (Ag-Cu) particles, and to pass through the Ag-Sn particles. 4. In high copper single composition (Tytin) amalgam, the crack went through the ${\gamma}_1$ matrix between ${\eta}$ crystals, and through the unreacted alloy particle (core).

• Restorative Dentistry and Endodontics
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• 제16권2호
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• pp.18-32
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• 1991

The purpose of this study was to observe characteristic properties of amalgam through the polarization curves and SEM images from 4 type amalgams (Amalcap, Shofu spherical. Dispersalloy and Tytin) with 3 different surface finish procedures (polishing, burnishing and carving) by using the potentiostats (EG & GPARC) and SEM (Jeol JSM-35). After each amalgam alloy and Hg was triturated as the direction of the manufacturer by means of mechanical amalgamator (Samki), the triturated mass was inserted into the cylndrical metal mold which was 12 mm in diameter and 10 mm in height and was pressed with $100kg/cm^2$. 4 specimens of each type amalgam were burnished with egg burnisher and another 4 specimens of each type amalgam were carved with Hollenback carver. Above 8 specimens and remaining untreated 4 specimens were stored at room temperature for about 7 days. Untreated 4 specimens of each type amalgam were polished with abrasive papers (Deer) from #400 to #1200 and finally on the polishing cloth with $0.5{\mu}m$ and $0.06{\mu}m$ $Al_2O_3 $ powder suspended water. Anodic polarization measurements was employed to compare the corrosion behaviours of the amalgams in 0.9% saline solution at $37^{\circ}C$. The open circuit potential was determined after 30 minutes immersion of specimen in electrolyte. The scan rate was 1 mV/sec and the surface area of amalgam exposed to the solution was $0.64cm^2$ for each specimen. All the potentials reported are with respect to a saturated calomel electrode (SCE). SEM images of each specimen were taken after + 800 mV (SCE) polarization. The results were as follows: 1. The corrosion potential of high copper amalgam was more anodic than that of low copper amalgam. 2. The polished amalgam were more resistant to corrosion than any other burnished and carved amalgam. 3. In the case of polishing, current density of high copper amalgam was lower than that of low copper amalgam.

• Restorative Dentistry and Endodontics
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• 제18권2호
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• pp.469-481
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• 1993

The purpose of this study was to achieve the reduction of the galvanic current between the dental amalgam alloy and gold alloy. In order to measure the galvanic current between these two metals a prep in the size of $4{\times}13mm$ which was filled with amalgam and another prep of $4{\times}2mm$ was filled with gold alloy was made in the acrylic resin. These two preps were then connected to a 2mm diameter copper wire. Using an ammeter to measure the galvanic current, six different kinds of amalgam and gold alloy were immersed in saline solution with approximately 10mm distance between the two alloys. Chemical agents that are thought to reduce the galvanic current such as hydrazine. silver nitrate, potassium chromate, and bonding agents such as Scotch bond 2(3M) and All bond 2(Bisco) were applied to the alloy surface. Cathodic inhibitor such as hydrazine was applied to gold alloy where as anodic inhibitor such as silver nitrate and potassium chromate were applied to amalgam. Both bonding agents, Scotch bond 2(3M) and All bond 2 (Bisco), were applied to amalgam. The following results were obtained when the currency on the coated alloy surface was compared to the uncoated surface. 1. The galvanic currency went down as the time elapsed and after 30 minutes no change was detected. 2. Initial currency was higher in low copper amalgam compared to high copper amalgam. Intitial currency was the highest in low copper lathe-cut amalgam. 3. Group of gold coated with hydrazine had the most reduction in galvanic currency. 4. Group of amalgam coated with silver nitrate or potassium chromate also showed significant reduction in galvanic currency. 5. The bonding agents also helped reduce galvanic currency. 6. Of all the agents used to reduce galvanic currency, silver nitrate showed the best result.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.214.2-214.2
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• 2013

Device performance for the 45 and 32 nm node CMOS technology requires the integration of ultralow-k materials. To lower the dielectric constant for PECVD and spin-on materials, partial replacement of the solid network with air (k=1.01) appears to be more intuitive and direct option. This can be achieved introducting of second "labile" phase during depositoin that is removed during a subsequent UV curing and annealing step. Besides, with shrinking line dimensions the resistivity of barrier films cannot meet the International Technology Roadmap for Semiconductors (ITRS) requirements. To solve this issue self-forming diffusion barriers have drawn attention for great potential technique in meeting all ITRS requirments. In this present work, we report a Cu-V alloy as a materials for the self-forming barrier process. And we investigated diffusion barrier properties of self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films were directly deposited onto low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for both of Cu alloys. The self-formed layers were investigated by transmission electron microscopy. In order to compare barrier properties between V-based interlayer on low-k dielectric with UV curing and interlayer on low-k dielectric without UV curing, thermal stability was measured with various heat treatment temperature. X-ray photoelectron spectroscopy analysis showed that chemical compositions of self-formed layer. The compositions of the V based self-formed barriers after annealing were strongly dominated by the O concentration in the dielectric layers.