• Title/Summary/Keyword: Convergence beam electron diffraction

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Phase Identification of Al-Ti Alloys Using Convergent Beam Electron Diffraction Pattern (수렴성 빔 전자회절 도형을 이용한 Al-Ti 합금의 상 분석)

  • Kim, Hye-Sung
    • Journal of the Korean Society of Industry Convergence
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    • v.4 no.2
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    • pp.149-155
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    • 2001
  • The use of primitive cell volume and zero order Laue (ZOLZ) pattern is proposed to identify phase in a complex microstructure. Single convergent beam electron pattern containing higher order Laue zone ring from a nanosized region is sufficient to calculate the primitive cell volume of the phase, while ZOLZ pattern is used to determine the zone axis of the crystal. A computer program is used to screen out possible phases from the value of measured cell volume from convergent beam electron diffraction (CBED) pattern. Indexing of ZOLZ pattern follows in the program to find the zone axis of the identification from a single CBED pattern. An example of the analysis is given from the rapidly solidified $Al-Al_3Ti$ system.

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Sensitivity of quantitative symmetry measurement algorithms for convergent beam electron diffraction technique

  • Hyeongsub So;Ro Woon Lee;Sung Taek Hong;Kyou-Hyun Kim
    • Applied Microscopy
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    • v.51
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    • pp.10.1-10.9
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    • 2021
  • We investigate the sensitivity of symmetry quantification algorithms based on the profile R-factor (Rp) and the normalized cross-correlation (NCC) coefficient (γ). A DM (Digital Micrograph©) script embedded in the Gatan digital microscopy software is used to develop the symmetry quantification program. Using the Bloch method, a variety of CBED patterns are simulated and used to investigate the sensitivity of symmetry quantification algorithms. The quantification results show that two symmetry quantification coefficients are significantly sensitive to structural changes even for small strain values of < 1%.

Enhancing Electrical Properties of Sol-Gel Processed IGZO Thin-Film Transistors through Nitrogen Atmosphere Electron Beam Irradiation (질소분위기 전자빔 조사에 의한 졸-겔 IGZO 박막 트랜지스터의 전기적 특성 향상)

  • Jeeho Park;Young-Seok Song;Sukang Bae;Tae-Wook Kim
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.3
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    • pp.56-63
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    • 2023
  • In this paper, we studied the effect of electron beam irradiation on sol-gel indium-gallium-zinc oxide (IGZO) thin films under air and nitrogen atmosphere and carried out the electrical characterization of the s ol-gel IGZO thin film transistors (TFTs). To investigate the optical properties, crystalline structure and chemical state of the sol-gel IGZO thin films after electron beam irradiation, UV-Visible spectroscopy, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) were carried out. The sol-gel IGZO thin films exhibited over 80% transmittance in the visible range. The XRD analysis confirmed the amorphous nature of the sol-gel IGZO films regardless of electron beam irradiation. When electron beam irradiation was conducted in a nitrogen (N2) atmosphere, we observed an increased proportion of peaks related to M-O bonding contributed to the improved quality of the thin films. Sol-gel IGZO TFTs subjected to electron beam exposure in a nitrogen atmosphere exhibited enhanced electrical characteristics in terms of on/off ratio and electron mobility. In addition, the electrical parameters of the transistor (on/off ratio, threshold voltage, electron mobility, subthreshold swing) remained relatively stable over time, indicating that the electron beam exposure process in a nitrogen atmosphere could enhance the reliability of IGZO-based thin-film transistors in the fabrication of sol-gel processed TFTs.

H2S Gas Sensing Properties of SnO2:CuO Thin Film Sensors Prepared by E-beam Evaporation

  • Sohn, Jae-Cheon;Kim, Sung-Eun;Kim, Zee-Won;Yu, Yun-Sik
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.4
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    • pp.135-139
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    • 2009
  • $H_2S$ micro-gas sensors have been developed employing $SnO_2$:CuO composite thin films. The films were prepared by e-beam evaporation of Sn and Cu metals on silicon substrates, followed by oxidation at high temperatures. Results of various studies, such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) reveal that $SnO_2$ and CuO are mutually non-reactive. The CuO grains, which in turn reside in the inter-granular regions of $SnO_2$, inhibit grain growth of $SnO_2$ as well as forming a network of p-n junctions. The film showed more than a 90% relative resistance change when exposed to $H_2S$ gas at 1 ppm in air at an operating temperature of $350^{\circ}C$ and had a short response time of 8 sec.

Comparative Study on Ablation Characteristics of Ti-6Al-4V Alloy and Ti2AlN Bulks Irradiated by Femto-second Laser (펨토초 레이저에 의한 티타늄 합금과 티타늄질화알루미늄 소결체의 어블레이션특성 비교연구)

  • Hwang, Ki Ha;Wu, Hua Feng;Choi, Won Suk;Cho, Sung Hak;Kang, Myungchang
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.18 no.7
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    • pp.97-103
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    • 2019
  • Mn+1AXn (MAX) phases are a family of nano-laminated compounds that possess unique combination of typical ceramic properties and typical metallic properties. As a member of MAX-phase, $Ti_2AlN$ bulk materials are attractive for some high temperature applications. In this study, $Ti_2AlN$ bulk with high density were synthesized by spark plasma sintering method. X-ray diffraction, micro-hardness, electrical and thermal conductivity were measured to compare the effect of material properties both $Ti_2AlN$ bulk samples and a conventional Ti-6Al-4V alloy. A femto-second laser conditions were conducted at a repetition rate of 6 kHz and laser intensity of 50 %, 70% and 90 %, respectively, laser confocal microscope were used to evaluate the width and depth of ablation. Consequently, the laser ablation result of the $Ti_2AlN$ sample than that of the Ti-6Al-4V alloys show a considerably good ablation characteristics due to its higher thermal conductivity regardless of to high densification and high hardness.

Influence of Quantum well Thickness Fluctuation on Optical Properties of InGaN/GaN Multi Quantum well Structure Grown by PA-MBE

  • Woo, Hyeonseok;Kim, Jongmin;Cho, Sangeun;Jo, Yongcheol;Roh, Cheong Hyun;Kim, Hyungsang;Hahn, Cheol-Koo;Im, Hyunsik
    • Applied Science and Convergence Technology
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    • v.26 no.3
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    • pp.52-54
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    • 2017
  • An InGaN/GaN multiple quantum well (MQW) structure is grown on a GaN/sapphire template using a plasma-assisted molecular beam epitaxy (PA-MBE). The fluctuation of the quantum well thickness formed from roughly-grown InGaN layer results in a disordered photoluminescence (PL) spectrum. The surface morphologies of the InGaN layers with various In compositions are investigated by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). A blurred InGaN/GaN hetero-interface and the non-uniform QW size is confirmed by high resolution transmission electron microscopy (HR-TEM). Inhomogeneity of the quantum confinement results in a degradation of the quantum efficiency even though the InGaN layer has a uniform In composition.

Effect of Shape Magnetic Anisotropy of Amorphous Fe-B-P Nanoparticles on Permeability

  • Lee, Ji Eun;Tsedenbal, Bulgan;Koo, Bon Heun;Huh, Seok Hwan
    • Korean Journal of Materials Research
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    • v.30 no.11
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    • pp.589-594
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    • 2020
  • Many electronic applications require magnetic materials with high permeability and frequency properties. We improve the magnetic permeability of soft magnetic powder by controlling the shape magnetic anisotropy of the powders and through the preparation of amorphous nanoparticles. For this purpose, the effect of the shape magnetic anisotropy of amorphous Fe-B-P nanoparticles is observed through a magnetic field and the frequency characteristics and permeability of these amorphous nanoparticles are observed. These characteristics are investigated by analyzing the composition of particles, crystal structure, microstructure, magnetic properties, and permeability of particles. The composition, crystal structure, and microstructure of the particles are analyzed using inductively coupled plasma optical emission spectrometry-, X-ray diffraction, scanning electron microscopy and focused ion beam analysis. The saturation magnetization and permeability are measured using a vibrating sample magnetometer and an LCR meter, respectively. It is confirmed that the shape magnetic anisotropy of the particles influences the permeability. Finally, the permeability and frequency characteristics of the amorphous Fe-B-P nanoparticles are improved.

Structural and Optical Properties of GaN Nanowires Formed on Si(111)

  • Han, Sangmoon;Choi, Ilgyu;Song, Jihoon;Lee, Cheul-Ro;Cho, Il-Wook;Ryu, Mee-Yi;Kim, Jin Soo
    • Applied Science and Convergence Technology
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    • v.27 no.5
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    • pp.95-99
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    • 2018
  • We discuss the structural and optical characteristics of GaN nanowires (NWs) grown on Si(111) substrates by a plasma-assisted molecular-beam epitaxy. The GaN NWs with high crystal quality were formed by adopting a new growth approach, so called Ga pre-deposition (GaPD) method. In the GaPD, only Ga was supplied without nitrogen flux on a SiN/Si surface, resulting in the formation of Ga droplets. The Ga droplets were used as initial nucleation sites for the growth of GaN NWs. The GaN NWs with the average heights of 60.10 to 214.62 nm obtained by increasing growth time. The hexagonal-shaped top surfaces and facets were observed from the field-emission electron microscope images of GaN NWs, indicating that the NWs have the wurtzite (WZ) crystal structure. Strong peaks of GaN (0002) corresponding to WZ structures were also observed from double crystal x-ray diffraction rocking curves of the NW samples. At room temperature, free-exciton emissions were observed from GaN NWs with narrow linewidth broadenings, indicating to the formation of high-quality NWs.