• Journal of Welding and Joining
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• 제21권6호
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• pp.46-54
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• 2003

The thermal response of electronic assemblies during forced convection-infrared reflow soldering is studied. Soldering for attaching electronic components to printed circuit boards is performed in a process oven that is equipped with porous panel heaters, through which air is injected in order to dampen temperature fluctuations in the oven which can be established by thermal buoyancy forces. Forced convection-infrared reflow soldering process with air injection is simulated using a 2-dimensional numerical model. The multimode heat transfer within the reflow oven as well as within the electronic assembly is simulated. Parametric study is also performed to study the effects of various conditions such as conveyor speed, blowing velocity, and electronic assembly emissivity on the thermal response of electronic assemblies. The results of this study can be used in the process oven design and selecting the oven operating conditions to ensure proper solder melting and solidification.

• Journal of Welding and Joining
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• 제15권6호
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• pp.105-115
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• 1997

A numerical study is performed to predict the thermal response of a detailed card assembly during infrared reflow soldering. The card assembly is exposed to discontinuous infrared panel heater temperature distributions and high radiative/convective heating and cooling rates at the inlet and exit of the oven. The convective, radiative and conduction heat transfer within the reflow oven as well as within the card assembly are simulated and the predictions illustrate the detailed thermal responses. The predictions show that mixed convection plays an important role with relatively high frequency effects attributed to buoyancy forces, however the thermal response of the card assembly is dominated by radiation. The predictions of the detailed card assembly thermal response can be used to select the oven operating conditions to ensure proper solder melting and minimization of thermally induced card assembly tresses and warpage.

• 마이크로전자및패키징학회지
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• 제15권4호
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• pp.1-7
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• 2008

본 실험에서는 두가지 리플로 시스템에 따라 솔더 범프 내에 생성되는 금속간 화합물의 성장거동에 대하여 연구하였다. 산화막이 증착된 Si 기판 위에 직류 마그네트론 스퍼터링을 이용하여 Ti(50 nm), Cu($1{\mu}m$), Au(50 nm), Ti(50 nm)의 박막을 형성한 후, 전해 도금을 이용하여 $5{\mu}m$두께의 Cu 범프와 $20{\mu}m$ 두께의 Sn 범프를 형성하였다. 급속열처리장치(RTA)와 일반 리플로를 이용하여 전해 도금으로 형성된 Sn($20{\mu}m$)/Cu($5{\mu}m$) 범프를 동일한 온도에서 각각 리플로 공정을 진행한 결과, 급속열처리장치를 이용하여 리플로를 할 때, 플럭스를 사용하지 않고 범프로 형성할 수 있었으며, 솔더 계면에 형성된 금속간 화합물이 일반 리플로의 경우보다 더 얇게 형성되었다.