• Journal of the Optical Society of Korea
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• 제1권2호
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• pp.94-99
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• 1997

In this paper, we calculate the four coefficients for the quantum theory of multiwave mixing including a local-field correction resulting from dipole-dipole interactions. We make contact with the semiclassical calculations of probe absorption and four-wave-mixing coupling coefficients, and illustrate the effects of local field corrections on resonance-fluorescence and coupled-mode-fluorescence spectra. The method uses the hybrid quantum-Langevin-equation master-equation approach of An and Sargent.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 추계학술대회
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• pp.1560-1565
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• 2003

Tapping mode atomic force microscopy (TM-AFM) utilizes the dynamic response of a resonating probe tip as it approaches and retracts from a sample to measure the topography and material properties of a nanostructure. We present recent results based on nonlinear dynamical systems theory, computational continuation techniques and detailed experiments that yield new perspectives and insight into AFM. A dynamic model including van der Waals and Derjaguin-Muller-Toporov (DMT) contact forces demonstrates that periodic solutions can be represented with respect to the approach distance and excitation frequency. Turning points on the surface lead to hysteretic amplitude jumps as the tip nears/retracts from the sample. Experiments are performed using a tapping mode tip on a graphite sample to verify the predictions.

• International Journal of Precision Engineering and Manufacturing
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• 제9권3호
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• pp.27-32
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• 2008

This paper describes a contact atomic force microscope (AFM) that can be used for high-speed precision measurements of microstructured surfaces. The AFM is composed of an air-bearing X stage, an air-bearing spindle with the axis of rotation in the Z direction, and an AFM probe unit. The traversing distance and maximum speed of the X stage are 300 mm and 400 mm/s, respectively. The spindle has the ability to hold a sample in a vacuum chuck with a maximum diameter of 130 mm and has a maximum rotation speed of 300 rpm. The bandwidth of the AFM probe unit in an open loop control circuit is more than 40 kHz. To achieve precision measurements of microstructured surfaces with slopes, a scanning strategy combining constant height measurements with a slope compensation technique is proposed. In this scanning strategy, the Z direction PZT actuator of the AFM probe unit is employed to compensate for the slope of the sample surface while the microstructures are scanned by the AFM probe at a constant height. The precision of such a scanning strategy is demonstrated by obtaining profile measurements of a microstructure surface at a series of scanning speeds ranging from 0.1 to 20.0 mm/s.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1963-1966
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• 2008

We fabricate and evaluate the metal-oxide-semiconductor (MOS) transistor probe with the focused-ionbeam (FIB) for surface electric properties. The probes are designed with the rectangular and V-shaped structures, and their dimensions are determined considering the contact mode operation. The conductive nano tip is grown with FIB system, and deposition condition is controlled for the sharp tip. The fabricated device is applied to the various test patterns like the metal lines and PZT poling regions, and the results show the well defined measurement patterns.

• 한국정밀공학회지
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• 제15권3호
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• pp.99-106
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• 1998

Recently, scientists introduced a new type of microscope capable of investigating nonconducting surfaces in an atomic scale, which is called AFM (Atomic Force Microscope). It was an innovative attempt to overcome the limitation of STM (Scanning Tunnelling Microscope) which has been able to obtain the image of conducting surfaces. Surfaces of samples are imaged with atomic resolution. The AFM is an imaging tool or a profiler with unprecedented 3-D resolution for various surface types. The AFM technology, however, leaves a lot of room for improvement due to its delicate and fragile probing mechanism. One of the room for improvements is gap control between probe tip and sample surface. Distance between probe tip and sample surface must be kept in below one Angtrom in order to measure the sample surface in Angstrom resolution. In this paper, AFM system modeling, experimental system identification and control scheme based on system identification are performed and finally sample surface is measured by home-built AFM with such a control scheme.

• Journal of Welding and Joining
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• 제30권6호
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• pp.36-41
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• 2012

General condensers consist of many tubes supported by tube sheets and support plates to prevent the deflection of the condenser tubes. When a fluid at high pressure and temperature runs over the tubes for the purpose of transferring heat from one medium to another, the tubes vibrate and their surface comes into contact with the support plates. This vibration causes damage to the tubes, such as cracks and wear. We propose an ultrasonic guided wave technique to detect the above problems in the support plate region. In the proposed method, the ultrasonic guided wave mode, L(0,1), is excited using an internal transducer probe from a single position at the end of the tube. In this paper, we present a preliminary experimental verification using a super stainless tube and show that the defects can be discriminated from the support signals in the support region.

• Transactions on Electrical and Electronic Materials
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• 제11권6호
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• pp.271-274
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• 2010

We examined the tunneling current behaviors of magnetic tunneling junction (MTJ) cells utilizing conductive atomic force microscopy (AFM) interfaced with an external magnetic field generator. By introducing current through coils, a magnetic field was generated and then controlled by a current feedback circuit. This enabled the characterization of the tunneling current under various magnetic fields. The current-voltage (I-V) property was measured using a contact mode AFM with a metal coated conducting cantilever at a specific magnetic field intensity. The obtained magnetoresistance (MR) ratios of the MTJ cells were about 21% with no variation seen from the different sized MTJ cells; the value of resistance $\times$ area (RA) were 8.5 K-12.5 K $({\Omega}{\mu}m^2)$. Since scanning probe microscopy (SPM) performs an I-V behavior analysis of ultra small size without an extra electrode, we believe that this novel characterization method utilizing an SPM will give a great benefit in characterizing MTJ cells. This novel method gives us the possibility to measure the electrical properties of ultra small MTJ cells, namely below $0.1\;{\mu}m\;{\times}\;0.1\;{\mu}m$.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2001년도 춘계학술대회 논문집
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• pp.445-449
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• 2001

The tool wear that is developed by long-term machining in mold manufacturing with machining center makes a severe influence to the accuracy and the surface roughness. In this reason, tool-wear supervising system which has guaranteed high accuracy and high speed is needed to improve the measurement quality. Touching probe and touch sensor are widely used to measure the tool profile at on-machine measurement. In this paper, using the newly developed electric touch point measuring system, the Automatic Tool Compensation System is developed to correct the error of tool diameter resulted from the wear, and the operating method of this system is also provided.

• 한국우주과학회:학술대회논문집(한국우주과학회보)
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• 한국우주과학회 2011년도 한국우주과학회보 제20권1호
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• pp.31.4-32
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• 2011

The previous KRISS profilometer design used an aluminum profile structure to which a bar-type reference mirror subsystem and the measurement subsystem are mounted. The earlier design suffers from low stiffness as shown from the first resonance mode of 45.1 Hz. The improved mechanical design we describe in this study replaces the aluminium profile structure with a granite structure of $1340{\times}220{\times}230$ in dimension. The finite element analysis results for the revised design show 0.001 degree in probe contact angle variation. The first resonance mode was computed to 91.2 Hz that is much better than 45.1 Hz from the previous design. We describe the improved design, structural analysis results and how these results would satisfy the form accuracy requirement of 1 ${\mu}m$ PV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.