• Title/Summary/Keyword: Contact material

Search Result 2,521, Processing Time 0.026 seconds

Ohmic Characteristics of TiN/3C-SiC for High-temperature MEMS Applications (초고온 MEMS용 TiN/3C-SiC의 Ohmic 특성)

  • Jung, Su-Yong;Woo, Hyung-Soon;Kim, Gue-Hyun;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.07b
    • /
    • pp.834-837
    • /
    • 2003
  • In this study, Ohmic contacts make on 3C-SiC using TiN. Ohmic contact resistivity of TiN/3C-SiC was evaluated. Specific contact resistance was calculated by Circular-TLM(transmission line model) method and physics properties were measured using XRD, SEM, respectively. TiN contact is stable at high temperatures and a good diffusion barrier material. The TiN/3C-SiC contacts are thermally stable to annealing temperatures up to $1000^{\circ}C$. The TiN thin-film depostied on 3C-SiC substraes have good electrical properties. Therefore, the TiN/3C-SiC contact can be usefully applied for high-temperature MEMS applications over $500^{\circ}C$.

  • PDF

Study on Metalizing 2% Na-PbTe for Thermoelectric Device (고효율 열전소재 2%Na-PbTe 의 소자화에 관한 연구)

  • Kim, Hoon;Kang, Chanyoung;Hwang, Junphil;Kim, Woochul
    • Transactions of the Society of Information Storage Systems
    • /
    • v.10 no.2
    • /
    • pp.32-38
    • /
    • 2014
  • Heat emission from the laser diode used in the optical disc drive and the defects from the increased temperature at the system have attracted attentions from the field of the information storage device. Thermoelectric refrigerator is one of the fine solutions to solve these thermal problems. The refrigeration performance of thermoelectric device is dependent on the thermoelectric material's figure-of-merit. Meanwhile, high electrical contact resistivity between metal electrode and p- and n-type thermoelectric materials in the device would lead increased total electrical resistance resulting in the degeneracy in performance. This paper represents the manufacturing process of the PbTe-based material which has one of the highest figure-of-merit at medium-high-temperature, ~ 600K to 900 K, and the nickel contact layer for reduced electrical contact resistance at once, and the results showing the decent contact structure and figure-of-merit even after the long-term operation environment.

Measurement of Local Elastic Properties of Flip-chip Bump Materials using Contact Resonance Force Microscopy (접촉 공진 힘 현미경 기술을 이용한 플립 칩 범프 재료의 국부 탄성계수 측정)

  • Kim, Dae-Hyun;Ahn, Hyo-Sok;Hahn, Junhee
    • Tribology and Lubricants
    • /
    • v.28 no.4
    • /
    • pp.173-177
    • /
    • 2012
  • We used contact resonance force microscopy (CRFM) technique to determine the quantitative elastic properties of multiple materials integrated on the sub micrometer scale. The CRFM approach measures the frequencies of an AFM cantilever's first two flexural resonances while in contact with a material. The plain strain modulus of an unknown or test material can be obtained by comparing the resonant spectrum of the test material to that of a reference material. In this study we examined the following bumping materials for flip chip by using copper electrode as a reference material: NiP, Solder (Sn-Au-Cu alloy) and under filled epoxy. Data were analyzed by conventional beam dynamics and contact dynamics. The results showed a good agreement (~15% difference) with corresponding values determined by nanoindentaion. These results provide insight into the use of CRFM methods to attain reliable and accurate measurements of elastic properties of materials on the nanoscale.

Investigation of Ni Silicide formation for Ni/Cu contact formation crystalline silicon solar cells (Ni/Cu 금속 전극이 적용된 결정질 실리콘 태양전지의 Ni silicide 형성의 관한 연구)

  • Lee, Ji-Hun;Cho, Kyeong-Yeon;Lee, Soo-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.06a
    • /
    • pp.434-435
    • /
    • 2009
  • The crystalline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more. high-efficiency and low cost endeavors many crystalline silicon solar cells. the fabrication processes of high-efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/Ag contact, however, this contact formation processed by expensive materials. Ni/Cu contact formation is good alternative. in this paper, according to temperature Ni silicide makes, produced Ni/Cu contact solar cell and measured conversion efficiency.

  • PDF

A Study for the Ohmic Contact of High Resistivity p-Cd$_{80}Zn_[20}$Te Semiconductor (고 비저항 p-Cd$_{80}Zn_[20}$Te의 저항성 전극형성에 관한 연구)

  • 최명진;왕진식
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1997.04a
    • /
    • pp.338-341
    • /
    • 1997
  • According to reports, it is impossible to make Ohmic Contact with high resistivity p type CdTe or CdZnTe semiconductor theoretically. But it is in need of making Ohmic Contact to fabricate semiconductor radiation detector By electroless deposition method using gold chloride solution, we made Ohmic Contact of Au and p-Cd$_{80}$Zn$_{20}$Te which grown by High Presure Bridgman Method in Aurora Technologies Corporation. We investigated the interface with Rutherford Backscattering Spectrometry and Auger electron spectroscopy. And we evaluated the degree of Ohmic Contact for the Au/CdZnTe interface by the I/V characteristic curve. As a result, we concluded that it showed excellent Ohmic Contact property by tunneling mechanism through the interface.e.

  • PDF

The characteristics of the specific contact resistance of Au-Te to n-GaAs (Au-Te 과 n-GaAs 의 접촉저항 특성)

  • 정성훈;송복식;문동찬;김선태
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1995.11a
    • /
    • pp.63-66
    • /
    • 1995
  • The ohmic characterization of Au/Te/Au/n-GaAs structure is investigated by the application of x-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the results of XRD measurement show the sharpening of the Au-Ga peak and the increasing of the intensity of Au peak due to the crystallization. At 400$^{\circ}C$, which is the ohmic onset point, Ga$_2$Te$_3$peak gets evident and GaAs regrowth peak appears for the samples annealed at 500$^{\circ}C$. The variation of shottky contact to ohmic contact is confirmed by the I-V curve transition. The specific contact resistance of 3.8x10$\^$-5/$\Omega$-$\textrm{cm}^2$ is obtained for the sample annealed at 500$^{\circ}C$ and above 600$^{\circ}C$ the specific contact resistance increased due to the decomposition of GaAs substrate.

  • PDF

Wear and Fatigue Properties of Surface-Hardened Rail Material (표면 강화처리 레일의 마모 및 피로 특성)

  • Chang, Seky;Pyun, Young-Sik
    • Journal of the Korean Society of Manufacturing Technology Engineers
    • /
    • v.25 no.5
    • /
    • pp.380-385
    • /
    • 2016
  • Railway tracks are repeatedly overstressed and damaged owing to increase in passing tonnage and numerous contact cycles between wheels of train and rails. In order to ensure safe train operation, heat-treated rails are used in addition to regular inspection and maintenance of these rails. Normal rails were treated using ultrasonic nanocrystal surface modification (UNSM) to strengthen the surface of rails. A few changes in surface properties were detected with respect to hardness and compressive residual stress after UNSM treatment. Wear and rolling contact fatigue tests were performed using rails whose surfaces were hardened by UNSM and heat-treated rails. The amount of wear and fatigue life cycles were measured to estimate the effect of UNSM on the rail material. The material of the surfacehardened rail showed improved wear and rolling contact fatigue properties.

Contact analysis of spherical ball and a deformable flat model with the effect of tangent modulus

  • Sathish Gandhi, V.C.;Ramesh, S.;Kumaravelan, R.;Thanmanaselvi, M.
    • Structural Engineering and Mechanics
    • /
    • v.44 no.1
    • /
    • pp.61-72
    • /
    • 2012
  • The paper is on contact analysis of a spherical ball with a deformable flat, considering the effect of tangent modulus on the contact parameters of a non-adhesive frictionless elastic-plastic contact. The contact analysis of this model has been carried out using analysis software Ansys and Abaqus. The contact parameters such as area of contact between two consecutive steps, volume of bulged material are evaluated from the formulated equations. The effect of the tangent modulus is considered for determining these parameters. The tangent modulus are accounted between 0.1E and 0.5E of materials E/Y value greater than 500 and less than 1750. Result shows that upto an optimal tangent modulus values the elastic core push up to the free surface in the flat. The simulation is also carried out in Abaqus and result provide evidence for the volume of bulged material in the contact region move up and flow into the free surface of the flat from the contact edge between the ball and flat. The strain energy of the whole model is varied between 20 to 40 percentage of the stipulated time for analysis.

V-t Characteristics and Survival Probability of Turn-to-Turn Models for HTS Transformer (고온초전도 변압기를 위한 턴간 모델의 V-t 특성 및 생존 확률)

  • Baek, Seung-Myeong;Cheon, Hyeon-Gweon;Nguyen, Van-Dung;Seok, Bok-Yeol;Kim, Sang-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2004.11a
    • /
    • pp.356-362
    • /
    • 2004
  • Using multi wrapped copper by polyimide film for HTS transformer, the breakdown and V-t characteristics of two type models for turn-to-turn, one is point contact model, the other is surface contact model, were investigated under ac and impulse voltage at 77 K. A material that is Polyimide film (Kapton) 0.025 mm thickness is used for multi wrapping of the electrode. Statistical analysis of the results using Weibull distribution to examine the wrapping number effects on V-t characteristics under at voltage as well as breakdown voltage under ac and impulse voltage in $LN_2$ was carried. Also, survival analysis was performed according to the Kaplan-Meier method. The breakdown voltages for surface contact model are lower than that of the point contact model, because the contact area of surface contact model is wider than that of point contact model. At the same time, the shape parameter of the point contact model is a little bit larger than the of the surface contact model. The time to breakdown tn is decreased as the applied voltage is increased, and the lifetime indices slightly are increased as the number of layers is increased. According to the increasing applied voltage and decreasing wrapping number, the survival probability is increased.

  • PDF