• 제목/요약/키워드: Contact line

검색결과 841건 처리시간 0.023초

차륜/레일간의 접촉력 계산을 위한 접촉점 해석 알고리즘 (Contact Point Analysis for Wheel/Rail Contact Force Calculation)

  • 박정훈;임진수;황요하;김창호
    • 한국철도학회논문집
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    • 제2권3호
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    • pp.1-8
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    • 1999
  • In this paper, descibed was the derived algorithm for calculating contact point between wheel and rail and the developed method for rail modeling. The proposed methods use travelling distance to represent rail center line position vector and rail orientation with respect to Newtonian reference frame. The methods call be easily used ill multibody dynamic analysis. Two numerical examples are shown to verify the validity of the proposed methods.

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무심 연삭 공정의 3차원 형상화기구 (I) -인피드 연삭- (3-D Form Generation Mechanism in the Centerless Grinding Process (I) -Infeed Grinding-)

  • 김강;주종남
    • 한국정밀공학회지
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    • 제15권5호
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    • pp.128-136
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    • 1998
  • A mathematical model for investigating the form generation mechanism in the centerless infeed grinding process is described. For 3-D modeling of form generation, contact points are assumed to be on least squares contact lines at the grinding wheel, regulating wheel, and work-rest blade. Using force and deflection analysis, the validity of this assumption is shown. Based on the 2-D simulation model developed in the previous work and the least squares contact line assumption, a 3-D model is presented. To validate this model, simulation results were compared with the experimental works. The experiments and computer simulations were carried out using three types of cylindrical workpiece shapes with varying flat length. The experimental results agree well with the simulation. It can be seen that the effect of flat end propagated to the opposite end through workpiece reorientation.

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Modeling of the Centerless Infeed (Plunge) Grinding Process

  • Kim, Kang
    • Journal of Mechanical Science and Technology
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    • 제17권7호
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    • pp.1026-1035
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    • 2003
  • A computer simulation method for investigating the form generation mechanism in the centerless infeed (plunge) grinding process is described. For a 3-D simulation model of form generation, contact points are assumed to be on least squares contact lines at the grinding wheel, regulating wheel, and work-rest blade. Using force and deflection analyses, the validity of this assumption is shown. Based on the 2-D simulation model developed in the previous work and the least squares contact line assumption, a 3-D model is presented. To validate this model, simulation results were compared with the experimental works. The experiments and computer simulations were carried out using three types of cylindrical workpiece shapes with varying flat length. The experimental results agree well with the simulation. It can be seen that the effect of flat end propagated to the opposite end through workpiece reorientation.

유기 TFT 재작을 위한 $\alpha$&$-67 박막의 접촉 및 전기적 특성 (Contact and Electrical Characteristics of $\alpha$-67 Thin-Film for the fabrication of organic Thin-Film Transistor)

  • 오세운;김대엽;최종선;박미경;김영관;신동명
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.313-316
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    • 1998
  • Conjugated oligomers have been already used as active layers in field effect transistors, photodiodes and electroluminescent devices. Particularly thiophene oligomers such $\alpha$ -sexithiophene($\alpha$-6T) attract great interest for its prospective app1ications in large-area flexible displays. In this study, we investigated the contact properties between the organic semiconductor $\alpha$-6T and metals such as Au(Gold), Ag(Silver), Cr(Chromium), Al(Aluminum), Cr(Chromium). Using the Transmission Line Model(TLM) method, specific contact resistances of the metal lines in contact with the $\alpha$-6T were determined. From the current-voltage characteristics, electrical conductivity of the $\alpha$-6T films is found.

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전차선 해빙시스템의 온도 상승효과 (Analysis of Temperature on Overhead Contact Line Using De-icing System)

  • 박영;권삼영;정호성;조용현;박현준;이기원
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2005년도 추계학술대회 논문집
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    • pp.724-729
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    • 2005
  • Winter weather condition can cause icing and ice coats on 25 kV overhead contact wire. This generates shocks at the mechanical interface of the collecting strips of the pantograph and the contact wire and extra electrical resistance, which may affect quality of current collection at the contact wire / collecting strips of pantograph interface. De-icing operations should he performed just before train operation to avoid the formation of another ice layer. Thus, the work in this paper is investigation and analysis of de-icing system which could be applied to the electric car line of railways.

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가열된 표면에 고착된 한 쌍의 액적 증발 특성 (Evaporation Characteristics of Paired Sessile Droplets on a Heated Substrate)

  • 이형주;황원영;김정호;최창경;이성혁
    • 한국분무공학회지
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    • 제28권3호
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    • pp.113-118
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    • 2023
  • This study investigates the evaporation characteristics of paired sessile droplets on a heated substrate. In particular, the evaporation time and contact line behaviors were analyzed based on the droplet-to-droplet distance and substrate temperature. The contact line behavior and volume variations were visualized using the shadowgraph method. It was observed that the contact diameter and contact angle exhibited similar behavior for both single and paired droplets regardless of the droplet-to-droplet distance and substrate temperature. The paired droplets demonstrated a longer evaporation time than the single droplet due to the vapor accumulation between the droplets. Furthermore, the scaled lifetime, defined as the ratio of evaporation time between paired and single droplets, increased as the droplet-to-droplet distance decreased and decreased as the substrate temperature increased, attributed natural convection.

E-Highway를 위한 팬터그래프의 가공선 위치정보 취득에 관한 연구 (A Study on Acquisition of Overhead Line Location Information of Pantograph for E-Highway)

  • 송광철;안준재;레동부;박성미;박성준
    • 한국산업융합학회 논문집
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    • 제26권5호
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    • pp.915-923
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    • 2023
  • As environmental regulations on carbon emissions are strengthened worldwide, the existing internal combustion engine-centered automobile industry is being reformed. In particular, large buses and large cargo trucks are pointed out as one of the main causes of environmental destruction due to excessive carbon emissions. The E-Highway power collection system, which has recently been proposed as a solution, uses the vehicle's battery as a backup power source or regenerative braking, depending on whether the pan head of the pentograph installed in the vehicle is in contact with the overhead line. It is used to store the excess energy generated. However, wear through contact due to continuous contact reduces the current collection effect and causes failure. In this paper, by using the current difference, the horizontal position information of the panhead in contact with the overhead line is acquired, thereby reducing the abrasion of the conductor and the panhead Make it possible to follow the overhead line. The position estimation method proposed in this paper simply configures a device that can detect the position of the overhead line of the pantograph by the difference in resistance. It is economical and has the advantage of reducing the volume. The characteristics of the pantograph estimating the location of overhead lines were analyzed using the difference between the two currents of the current collector, the feasibility of the positioning estimation system was verified through simulations and experiments.

Pt/Si/Ti P형 4H-SiC 오옴성 접합에서 낮은 접촉 저항에 관한 연구 (Low resistivity ohmic Pt/Si/Ti contacts to p-type 4H-SiC)

  • 양성준;이주헌;노일호;김창교;조남인;정경화;김은동;김남균
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.521-524
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    • 2001
  • In this letter. we report on the investigation of Ti. Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at $500^{\circ}C$ for 1h. $950^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method. which resulted in specific contact resistivities in the $3.5{\times}10^{-3}$ and $6.2{\times}10^{-4}ohm/cm^{2}$, and the physical properties of the contacts were examined using x-ray diffraction. microscopy. AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si. migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

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Pt/Si/Ti P형 4H-SiC 오옴성 접합에서 낮은 접촉 저항에 관한 연구 (Low resistivity ohmic Pt/Si/Ti contacts to p-type 4H-SiC)

  • 양성준;이주헌;노일호;김창교;조남인;정경화;김은동;김남균
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.521-524
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    • 2001
  • In this letter, we report on the investigation of Ti, Pt/Si/Ti Ohmic contacts to p-type 4H-SiC. The contacts were formed by a 2-step vacuum annealing at 500$^{\circ}C$ for 1h, 950$^{\circ}C$ for 10 min respectively. The contact resistances were measured using the transmission line model method, which resulted in specific contact resistivities in the 3.5x10$\^$-3/ and 6.2x10$\^$-4/ ohm/$\textrm{cm}^2$, and the physical properties of the contacts were examined using x-ray diffraction, microscopy, AES(auger electron spectroscopy). AES analysis has shown that, at this anneal temperature, there was a intermixing of the Ti and Si, migration of into SiC. Overlayer of Pt had the effect of decreasing the specific contact resistivity and improving the surface morphology of the annealed contact.

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III-V 광소자 제작을 위한 ITO/n+lnP 옴 접촉 특성연구 (Formation of ITO Ohmic Contact to ITO/n+lnP for III-V Optoelectronic Devices)

  • 황용한;한교용
    • 한국전기전자재료학회논문지
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    • 제15권5호
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    • pp.449-454
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    • 2002
  • The use of a thin film of indium between the ITO and the $n^+-lnP$ contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. $ITO/n^+-lnP$ ohmic contact was successfully achieved by the deposition of indium and annealing. The specific contact resistance of about $6.6{\times}10^{-4}\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to $ITO/n^+-lnP$ contact without the deposition of indium between ITO and $n^+-lnP$, it exhibited Schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with those of InP/InGaAs HBTs with the opaque emitter contacts.