• Structural Engineering and Mechanics
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• 제57권2호
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• pp.295-313
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• 2016

In this study, the three-dimensional finite element method is used to determine the stress intensity factor in Mode I and Mixed mode of a centered crack in an aluminum specimen repaired by a composite patch using contour integral. Various mesh densities were used to achieve convergence of the results. The effect of adhesive joint thickness, patch thickness, patch-specimen interface and layer sequence on the SIF was highlighted. The results obtained show that the patch-specimen contact surface is the best indicator of the deceleration of crack propagation, and hence of SIF reduction. Thus, the reduction in rigidity of the patch especially at adhesive layer-patch interface, allows the lowering of shear and normal stresses in the adhesive joint. The choice of the orientation of the adhesive layer-patch contact is important in the evolution of the shear and peel stresses. The patch will be more beneficial and effective while using the cross-layer on the contact surface.

• Transactions on Electrical and Electronic Materials
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• 제13권1호
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• pp.35-38
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• 2012

In this study, we have attempted to characterize the photovoltaic effect in real-time measurement of photoinduced current in a poly-Si-based solar cell using photoconductive atomic force microscopy (PC-AFM). However, the high contact resistance that originates from the metal-semiconductor Schottky contact disturbs the current flow and makes it difficult to measure the photoinduced current. To solve this problem, a thin metallic film has been coated on the surface of the device, which successfully decreases the contact resistance. In the PC-AFM analysis, we used a metal-coated conducting cantilever tip as the top electrode of the solar cell and light from a halogen lamp was irradiated on the PC-AFM scanning region. As the light intensity becomes stronger, the current value increases up to $200{\mu}A$ at 80 W, as more electrons and hole carriers are generated because of the photovoltaic effect. The ratio of the conducting area at different conditions was calculated, and it showed a behavior similar to that generated by a photoinduced current. On analyzing the PC-AFM measurement results, we have verified the correlation between the light intensity and photoinduced current of the poly-Si-based solar cell in nanometer scale.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1030-1035
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• 2003

The nanoimprint lithography technology makes higher density of semiconductor device and larger capacity of storage media. In this technology the induced damage while detaching polymer pattern from mold should be minimized. In order to analyze the problem, the basic knowledge of adhesion between the polymer and the mold is required. In this study a contact experiment of polyisobutylene specimen with spherical steel tip and polyisobutylene bead tip was conducted using nano indenter. During the contact experiment with various loading rate under load control the contact behavior of viscoelastic material was measured, i.e., the load and displacement between the tip and the specimen were measured. The data was analyzed by HBK model to obtain the stress intensity factor of contact edge and the contact radius as a function of time. Also the adhesion energies between steel/polyisobutylene and polyisobutylene/polyisobutylene were obtained employing the analysis of the crack of viscoelastic material by Schapery.

• 대한기계학회논문집
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• 제14권3호
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• pp.624-635
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• 1990

본 연구에서는 마멸과정을 선형파괴역학적 관점에서 해석하여, 탄성체의 표면 에 산재되어 있는 표면균열의 전파거동을 마멸과정규명의 입장에서 살펴보고자 한다. 우선 마멸거동에 관한 파괴역학적 접근방식에 의한 마멸이론의 확립을 위해서, 표면균 열이 내부균열보다 그 전파 가능성이 높다고 한 Keer등의 주장에 착안하여 Hertz 접촉 압력하의 경사진 표면균열의 전파거동을 선형파괴역학적으로 해석하고자 한다. 이론 해석에 있어서는 표면균열을 인상전립의 연속분포로 치환하고, 전립밀도분포함수에 관 한 특이적분방정식을 유도해서 Erdogangupta의 방법을 이용하여 그 해를 구하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.63-66
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• 1995

The ohmic characterization of Au/Te/Au/n-GaAs structure is investigated by the application of x-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the results of XRD measurement show the sharpening of the Au-Ga peak and the increasing of the intensity of Au peak due to the crystallization. At 400$^{\circ}C$, which is the ohmic onset point, Ga$_2$Te$_3$peak gets evident and GaAs regrowth peak appears for the samples annealed at 500$^{\circ}C$. The variation of shottky contact to ohmic contact is confirmed by the I-V curve transition. The specific contact resistance of 3.8x10$\^$-5/$\Omega$-$\textrm{cm}^2$ is obtained for the sample annealed at 500$^{\circ}C$ and above 600$^{\circ}C$ the specific contact resistance increased due to the decomposition of GaAs substrate.

• Journal of Mechanical Science and Technology
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• 제16권2호
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• pp.182-191
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• 2002

The reliable stress intensity factor analysis is required for fracture mechanics design or safety evaluation of mechanical joints at which cracks often initiate and grow. It has been reported that cracks in mechanical joints usually nucleate as corner cracks at the faying surface of joints and grow as elliptical arc through cracks. In this paper, three dimensional finite element analyses are performed for elliptical arc through cracks in mechanical joints. Thereafter stress intensity factors along elliptical crack front including two surface points are determined by the virtual crack closure technique. Virtual crack closure technique is a method to calculate stress intensity factor using the finite element analysis and can be applied to non-orthogonal mesh. As a result, the effects of clearance on the stress intensity factor are investigated and crack shape are then predicted.

• Tribology and Lubricants
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• 제19권6호
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• pp.357-364
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• 2003

The sub­surface stress field beneath the gear's contact surface caused by the contact pressure in lubricated condition has been calculated. To evaluate the influence of the clearance shape on the stress field, two kinds of tooth profile models were chosen. One is the conventional cylinder contact model and the other is the new numerical model. Love's rectangular patch solution was used to obtain the sub­surface stress field. The analysis results show that the sub­surface stress is quite dependent on both the contact pressure and the profile model. The maximum effective stress of the new model is lower than that of the old model. The depth where the maximum effective stress occurs in the new model is not proportional to the intensity of the external load.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1061-1064
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• 2009

Through dark injection space-charge-limited current (DI-SCLC) and trap-free SCLC measurements, it has been demonstrated that an indium tin oxide (ITO)/buckminsterfullerene ($C_{60}$) electrode can form a quasi-Ohmic contact with N, N'-bis (naphthalen-1-yl)-N, N'-bis(phenyl) benzidine (NPB). The DI-SCLC results show a clear peak current along with a shift of the peak position as the field intensity varies, implying an Ohmic (or quasi-Ohmic) contact. A theoretical simulation of the SCLC also shows that ITO/$C_{60}$ forms an Ohmic contact with NPB. The Ohmic contact makes it possible to estimate the NPB hole mobility through the use of both DI-SCLC and trap-free SCLC analysis. This also contributes to a reduction in power consumption.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2000년도 춘계학술대회논문집A
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• pp.212-217
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• 2000

The reliable determination of the stress intensity factors for cracks in bolted Joints is needed to evaluate the safety and fatigue life of them widely used in mechanical components. The weight function method is an efficient technique to calculate the stress intensity factors for various loading conditions using the stresses of an uncracked model. In this paper the mixed-mode stress intensity factors for cracks in bolted joints are obtained by weight function method, in which the coefficients of weight function are determined by finite element analyses far reference loadings. The effects of the magnitude of clearance and factional coefficient on the stress intensity factors are investigated.

• 전자공학회논문지A
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• 제28A권11호
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• pp.894-901
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• 1991

Contact-type linear image sensors have been fabricated by means of RF glow discharge decomposition method of silane and hydrogen mixtures. The dependences of the electrical and optical properties of these sensor on thickness, RF power, substrate temperature and ambient gas pressure have been investigated. the ITO/i-a-Si:H/Al structure film shows photosensitivity of 0.85 and photocurrent to dark current ratio ($I_{ph}/I_{d}$) of 150 at 5V bias voltage under 200${\mu}W/cm^[2}$ red light intensity. Under 200${\mu}W/cm^[2}$ green light intensity, the ratio is 100. In order to investigate photocarrier transport mechanism and to obtain ${\mu}{\gamma}$ product we have measured the I-V characteristics of these sensors favricated with several different deposition parameters under various light sources. The linear inage sensor for document reading has been operated under reverse bias condition with green light source, resulting in ${\mu}{\gamma}$ product of about 1.5$[\times}10^{-9}cm^{2}$/V.