• Title/Summary/Keyword: Contact Region

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Comparison of the Factors Related to Depression of the Female Elderly Living Alone by Region (농촌거주 여성독거노인의 우울성향에 영향을 미치는 변인에 관한 연구 - 도시여성독거노인과의 비교를 중심으로 -)

  • Kim, Eunkyung
    • Korean Journal of Human Ecology
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    • v.24 no.6
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    • pp.811-827
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    • 2015
  • The purpose of this study was to explore the factors related to depression of female elderly living alone by region. Data for this study was based on the 2011 National Survey on Elderly. Total of 1,684(689 rural elderly, 995 urban) community samples of female elderly living alone participated in this study. Even though there was no difference of depression score by region, this study found that the effects of factors on depression were significantly different by region. Yearly income, subjective health, balanced exchange of emotional support and satisfaction with their children were significantly associated with depression of both rural and urban female elderly living alone. For rural female elderly living alone, average daily television viewing time, number of close friends and frequency of contact with friends/neighbors were significant predictors to their depression. In the case of urban female elderly living alone, exercise, frequency of message, email or telephone contact with friends/ neighbors and balanced exchange of economic support contributed significantly to the prediction of depression. Subjective health had the strongest effect on depression for both rural and urban female elderly living alone.

A Study on Contact Resistance of the Nano-Scale MOSFET (Nano-Scale MOSFET 소자의 Contact Resistance에 대한 연구)

  • 이준하;이흥주
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.5 no.1
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    • pp.13-15
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    • 2004
  • The current driven in an MOSFET is limited by the intrinsic channel resistance. All the other parasitic elements in a device structure play a significant role and degrade the device performance. These other resistances need to be less than 15% of the channel resistance. To achieve the requirements, we should investigate the methodology of separation and quantification of those resistances. In this paper, we developed the extraction method of resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that forms under the gate in the tail region of the extension profile. This resistance is strongly affected by the abruptness of the extension profile because the steeper the profile is, the shorter this accumulation region will be.

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FINITE ELEMENT ANALYSIS OF MANDIBULAR STRESSES AND DENTURE MOVEMENTS INDUCED BY OVERDENTURES (Overdenture 하에서 하악응력 및 의치의 변위에 관한 유한요소법적 분석)

  • Kim, Joung-Hee;Chung, Chae-Heon;Cho, Kyu-Zong
    • The Journal of Korean Academy of Prosthodontics
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    • v.28 no.1
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    • pp.63-94
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    • 1990
  • The purpose of this study was to analyze the displacement and the magnitude and the mode of distribution of the stresses in the lower overdenture, the mucous membrane, the abutment tooth and the mandibular supporting bone when various denture base materials, such as acrylic resin and 0.5mm metal base, and various denture base designs were subjected to different loading schemes. For this study, the two-dimensional finite element method was used. Mandibular arch models, with only canine remaining, were fabricated. In the first denture base design, a space, approximately 1mm thick, was prepared between the denture and the dome abutment. In the second denture base design, contact between the denture and the dome abutment was eliminated except the contact of the occlusal third of the abutment. In order to represent the same physiological condition as the fixed areas of the mandible under loading schemes, the eight nodes which lie at the mandibular angle region, the coronoid process and the mandibular condyle were assumed to be fixed. Each model was loaded with a magnitude of 10 kgs on the first molar region(P1) and 7 kgs on the central incisal region (P2) in a vertical direction. Then the force of 10 kgs was applied distributively from the first premolar to the second molar of each model in a vertical direction(P3). The results were as follows. : 1. When the testing vertical loads were given to the selected points of the overdenture, the overdenture showed the rotatory phenomenon, as well as sinking and the displacements of alveolar ridge, abutment and lower border of mandible under the metal base overdenture were less than those under the acrylic resin overdenture. 2. The maximum principal stresses(the maximum tensile stresses) being considered, high tensile stresses occured at the buccal shelf area, the posterior region of the ridge crest and the anterior border region of the mandibular ramus. 3. The minimum principal stresses(the maximum compressive stresses) being considered, high compressive stresses occured at the inferior and posterior border region of the mandible, the mandibular angle and the posterior border region of the mandibular ramus. 4. The vertical load on the central incisal region(P2) produced higher equivalent stress in the mandible than that on any other region(P1, P3) because of the long lever arm distance from the fixed points to the loading point. 5. Higher equivalent stresses were distributed throughout the metal base overdenture than the resin base overdenture under the same loading condition. 6. The case of occlusal third contact of the abutment to the denture produced higher equivalent stresses in the abutment, the mandibular area around the abutment and the overdenture than the case of a 1mm space between the denture and the abutment. 7. Without regard to overdenture base materials and designs, the amounts and distribution patterns of equivalent stresses under the same loading condition were similar in the mucous membrane.

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Temperature Rise Analysis of Sliding Contact Surfaces in Lubrication Considering Elastic Deformation (탄성변형을 고려한 윤활 상태에서 거친 표면의 미끄럼 접촉온도 해석)

  • Cho Yong-Joo;Kim Byoung-Sun;Lee Sang-Don
    • Tribology and Lubricants
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    • v.22 no.3
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    • pp.137-143
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    • 2006
  • The sliding contact interface of machine components such as bearings, gears frequently operates in lubrication at the inception of sliding failure under high loads, speed and slip. The surface temperature at the interface of bodies in a sliding contact is one of the most important factors influencing the behavior of machine components. Most surface failure in sliding contact region result from frictional heat generation. However, it is difficult to measure temperature rise experimentally. So the calculation of the surface temperature at a sliding contact interface has long been an interesting and important subject for tribologist. The surface temperature rise is related in contact pressure, sliding speed, material properties and lubrication thickness. Though roughness, load, ect all of the condition, are same, film thickness varies with velocity. In this study, surface temperature rise due to frictional heating in lubrication is calculated with various velocities. Surface film shearing and dry solid asperity contact are used to simulate the change of frictional heat in lubricated contact

Transparent Phosphorus Doped ZnO Ohmic Contact to GaN Based LED

  • Lim, Jae-Hong;Park, Seong-Ju
    • Korean Journal of Materials Research
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    • v.19 no.8
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    • pp.417-420
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    • 2009
  • This study develops a highly transparent ohmic contact using phosphorus doped ZnO with current spreading for p-GaN to increase the optical output power of nitride-based light-emitting diodes (LEDs). The phosphorus doped ZnO transparent ohmic contact layer was prepared by radio frequency magnetron sputtering with post-deposition annealing. The transmittance of the phosphorus doped ZnO exceeds 90% in the region of 440 nm to 500 nm. The specific contact resistance of the phosphorus doped ZnO on p-GaN was determined to be $7.82{\times}10^{-3}{\Omega}{\cdot}cm^2$ after annealing at $700^{\circ}C$. GaN LED chips with dimensions of $300\times300{\mu}m$ fabricated with the phosphorus doped ZnO transparent ohmic contact were developed and produced a 2.7 V increase in forward voltage under a nominal forward current of 20 mA compared to GaN LED with Ni/Au Ohmic contact. However, the output power increased by 25% at the injection current of 20 mA compared to GaN LED with the Ni/Au contact scheme.

Effects of Optically-modulated Metal-graphene Contact on the Photoresponsivity of Graphene Photodetectors (빛에 의해 변조되는 금속-그래핀 컨택이 그래핀 포토디텍터의 광응답도에 미치는 영향)

  • Lee, Chang-Ju;Shim, Jae Hoon;Park, Hongsik
    • Journal of Sensor Science and Technology
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    • v.28 no.2
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    • pp.117-120
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    • 2019
  • Graphene is recognized as a promising material for silicon photonics, since it has a wide optical-window that entirely covers the optical communication wavelength region ($1.3{\sim}1.6-{\mu}m$) and extremely high-carrier mobility that makes it possible to fabricate the high-speed photodetectors. However, the maximum absorbance of monolayer graphene is only 2.3%, which limits the photoresponse characteristics of graphene photodetectors. As a result, a low photoresponsivity of graphene photodetector is a critical issue limiting the use of graphene photodetectors in the optical communications field. In this paper, we investigated effects of optically-modulated metal-graphene contact on the photoresponsivity of graphene photodetectors. The optical modulation of the contact resistance mainly determined the photoresponse characteristics of graphene photodetectors. The Ni-contact graphene photodetector which has a characteristic of the significant optical modulation of metal-graphene contact showed a higher photoresponsivity than the Pd-contact device. This work will provide a way to improve the photoresponse characteristics of graphene-based photodetector and contribute to the development of high-speed/high-responsivity graphene photodetector.

Investigation of continuous and discontinuous contact cases in the contact mechanics of graded materials using analytical method and FEM

  • Yaylaci, Murat;Adiyaman, Gokhan;Oner, Erdal;Birinci, Ahmet
    • Computers and Concrete
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    • v.27 no.3
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    • pp.199-210
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    • 2021
  • The aim of this paper was to examine the continuous and discontinuous contact problems between the functionally graded (FG) layer pressed with a uniformly distributed load and homogeneous half plane using an analytical method and FEM. The FG layer is made of non-homogeneous material with an isotropic stress-strain law with exponentially varying properties. It is assumed that the contact at the FG layer-half plane interface is frictionless, and only the normal tractions can be transmitted along the contacted regions. The body force of the FG layer is considered in the study. The FG layer was positioned on the homogeneous half plane without any bonds. Thus, if the external load was smaller than a certain critical value, the contact between the FG layer and half plane would be continuous. However, when the external load exceeded the critical value, there was a separation between the FG layer and half plane on the finite region, as discontinuous contact. Therefore, there have been some steps taken in this study. Firstly, an analytical solution for continuous and discontinuous contact cases of the problem has been realized using the theory of elasticity and Fourier integral transform techniques. Then, the problem modeled and two-dimensional analysis was carried out by using ANSYS package program based on FEM. Numerical results for initial separation distance and contact stress distributions between the FG layer and homogeneous half plane for continuous contact case; the start and end points of separation and contact stress distributions between the FG layer and homogeneous half plane for discontinuous contact case were provided for various dimensionless quantities including material inhomogeneity, distributed load width, the shear module ratio and load factor for both methods. The results obtained using FEM were compared with the results found using analytical formulation. It was found that the results obtained from analytical formulation were in perfect agreement with the FEM study.

Effect of Buried Contact on the Epitaxial Base Silicon Solar Cell (에피텍셜 베이스 실리콘 태양전지에서 Buried Contact 효과)

  • Chang, Gee-Keun;Lim, Yong-Keu;Jeong, Jin-Cheol
    • Korean Journal of Materials Research
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    • v.13 no.5
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    • pp.313-316
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    • 2003
  • The new epitaxial base cell as a high efficiency Si solar cell was fabricated and the effect of buried contact on the cell characteristics was investigated. In our experiments, the cell with buried contact showed the open circuit voltage of 0.62 V, the short circuit current of 40 mA, the fill factor of 0.7, and the efficiency of 10% under the incident light of AM-1 100 ㎽/$\textrm{cm}^2$. The insertion of buried contact in the epitaxial base structure brought the fabricated cell to the efficiency improvement of about 33%. The cell proposed in this paper has the structural superiority in the fabrication of high efficiency solar cell due to the carrier drift transport in the optical absorption region and the formation of back surface field by $p^{-}$ $p^{+}$ epitaxial base, and the reduction of emitter series resistance by n+ buried contact.

Highly Transparent Indium Oxide Doped ZnO Spreading Layer for GaN Based Light Emitting Diodes

  • Lim, Jae-Hong;Park, Seong-Ju
    • Korean Journal of Materials Research
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    • v.19 no.8
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    • pp.443-446
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    • 2009
  • This study develops a highly transparent ohmic contact scheme using indium oxide doped ZnO (IZO) as a current spreading layer for p-GaN in order to increase the optical output power of nitride-based lightemitting diodes (LEDs). IZO based contact layers of IZO, Ni/IZO, and NiO/IZO were prepared by e-beam evaporation, followed by a post-deposition annealing. The transmittances of the IZO based contact layers were in excess of 80% throughout the visible region of the spectrum. Specific contact resistances of $3.4\times10^{-4}$, $1.2\times10^{-4}$, $9.2\times0^{-5}$, and $3.6\times10^{-5}{\Omega}{\cdot}cm^2$ for IZO, Ni/Au, Ni/IZO, and NiO/IZO, respectively were obtained. The forward voltage and the optical output power of GaN LED with a NiO/IZO ohmic contact was 0.15 V lower and was increased by 38.9%, respectively, at a forward current of 20 mA compared to that of a standard GaN LED with an Ni/Au ohmic contact due to its high transparency, low contact resistance, and uniform current spreading.

Fretting Fatigue Behavior of High Strength Aluminum Alloys (고강도 알루미늄 합금의 프레팅 피로거동)

  • Choi, Sung-Jong;Lee, Hak-Sun;Lee, Cheol-Jae;Kim, Sang-Tae
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.31 no.2 s.257
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    • pp.197-204
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    • 2007
  • Fretting is a contact damage process that occurs between two contact surfaces. Fretting fatigue reduces fatigue strength of the material due to low amplitude oscillatory sliding and changes in the contact surfaces of strongly connected machine and structure such as bolt, key, pin, fixed rivet and connected shaft, which have relative slip of repeatedly extreme low frequency amplitude. In this research, the fretting fatigue behavior of 2024-T3511 and 7050-T7451 aluminum alloys used mainly in aircraft and automobile industry were experimentally estimated. Based on this experimental wort the following results were obtained: (1) A significant decrease of fatigue lift was observed in the fretting fatigue compared to the plain fatigue. The fatigue limit of 2024-T3511 aluminum alloy decreased about 59% while 7050-T7451 aluminum alloy decreased about 75%. (2) In 7050-T7451 specimen using ATSI4030 contact pad, crack was initiated more early stage than using 2024-T3511 contact pad. (3) In all specimens, oblique cracks were initiated at contact edge. (4) Tire tracks and rubbed scars were observed in the oblique crack region of fracture surface.