• Title/Summary/Keyword: Contact Region

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Three Dimensional Visualization of Contact Region for a Protein Complex (단백질 복합체를 위한 접촉 영역의 3차원 가시화)

  • Kang, Beom Sik;Kim, Ku-Jin;Kim, Yukyeong
    • KIPS Transactions on Software and Data Engineering
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    • v.2 no.12
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    • pp.899-902
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    • 2013
  • In this paper, we present a method to visualize the contact region between two molecules in a protein complex in a threedimensional space. The contact region of two molecules shows compatibility in geometric aspects. Usually, the computation of the area of contact region has been used to show the strength of compatibility. The numerical value and simple drawing of contact region would be useful for comparing the relative strength of different contacts, but it is not appropriate for analysing the geometric characteristics of the contact region. In this paper, we present a method to show the compatibility between two molecules by visualizing the distance information between them.

Visualization of Geometric Features in the Contact Region of Proteins (단백질 접촉 영역의 기하학적 특성 가시화)

  • Kim, Ku-Jin
    • KIPS Transactions on Software and Data Engineering
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    • v.8 no.10
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    • pp.421-426
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    • 2019
  • In this paper, we propose a method to visualize the geometric features of the contact region between proteins in a protein complex. When proteins or ligands are represented as curved surfaces with irregularities, the property that the two surfaces contact each other without intersections is called shape compatibility. Protein-Protein or Protein-Ligand docking researches have shown that shape complementarity, chemical properties, and entropy play an important role in finding contact regions. Usually, after finding a region with high shape complementarity, we can predict the contact region by using residual polarity and hydrophobicity of amino acids belonging to this region. In the research for predicting the contact region, it is necessary to investigate the geometrical features of the contact region in known protein complexes. For this purpose, it is essential to visualize the geometric features of the molecular surface. In this paper, we propose a method to find the contact region, and visualize the geometric features of it as normal vectors and mean curvatures of the protein complex.

Tooth Durability Evaluation of n Cylindrical Worm Gear by Contact Line Analysis (원통형 웜기어의 접촉선 해석)

  • Cheon, Gill-Jeong;Han, Dong-Chul
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.23 no.7 s.166
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    • pp.1231-1237
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    • 1999
  • Applying the conjugate contact condition, contact lines of a cylindrical worm gear has been calculated. The characteristics of tooth contact were analyzed and the pitting resistance were also assessed. It has been verified that: i) the length of contact is shortest on the 1st tooth of the front region, ii) the contact region is more narrow in the recess side than in the access side, iii) the contact region is more narrow in worm than in worm wheel. Hence, the pitting resistance is weakest in the recess side of the 1st contacting worm tooth.

3차원 소자를 위한 개선된 소오스/드레인 접촉기술

  • An, Si-Hyeon;Gong, Dae-Yeong;Park, Seung-Man;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.248-248
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    • 2010
  • CMOS 축소화가 32nm node를 넘어서 지속적으로 진행되기 위하여 FinFET, Surround Gate and Tri-Gate와 같은 Fully Depleted 3-Dimensional 소자들이 SCE를 다루기 위해서 많이 제안되어 왔다. 하지만 소자의 축소화를 진행함에 있어서 좁고 균일한 patterning을 형성하는 것과 동시에 낮은 Extension Region과 Contact Region에서의 Series Resistance을 제공하여야 하고 Source/Drain Contact Formation을 확보하여야 한다. 그리고 소자의 축소화가 진행됨으로써 Silicide의 응집현상과 Source/Drain Junction의 누설전류에 대한 허용범위가 점점 엄격해지고 있다. ITRS 2005에 따르면 32nm CMOS에서는 Contact Resistivity가 대략 $2{\times}10-8{\Omega}cm2$이 요구되고 있다. 또한 Three Dimensional 소자에서는 Fin Corner Effect가 Channel Region뿐만 아니라 S/D Region에서도 중대한 영향을 미치게 된다. 따라서 본 논문에서 제시하는 Novel S/D Contact Formation 기술을 이용하여 Self-Aligned Dual/Single Metal Contact을 이루어Patterning에 대한 문제점 해결과 축소화에 따라 증가하는 Contact Resistivity 문제점을 해결책을 제시하고자 한다. 이를 검증하기3D MOSFET제작하고 본 기술을 적용하고 검증한다. 또한 Normal Doping 구조를 가진3D MOSFET뿐만 아니라 SCE를 해결하기 위해서 대안으로 제시되고 있는 SB-MOSFET을 3D 구조로 제작하고, 이 기술을 적용하여 검증한다. 그리고 Silvaco simulation tool을 이용하여 S/D에 Metal이 Contact을 이루는 구조가 Double type과 Triple type에 따라 Contact Resistivity에 미치는 영향을 미리 확인하였고 이를 실험으로 검증하여 소자의 축소화에 따라 대두되는 문제점들의 해결책을 제시하고자 한다.

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On the Slipping Phenomenon in Adhesive Complete Contact Problem (응착 완전 접촉 문제에서 접촉면 미끄럼 현상에 관한 고찰)

  • Kim, Hyung-Kyu
    • Tribology and Lubricants
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    • v.36 no.3
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    • pp.147-152
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    • 2020
  • This paper is within the framework of an adhered complete contact problem wherein the contact between a half plane and sharp edged indenter, both of which are elastic in character, is constituted. The eigensolutions of the contact shear and normal stresses, σrq and σq, respectively, are evaluated via asymptotic analysis. The ratio of σrqqq is investigated and compared with the coefficient of friction, μ, of the contact surface to observe the propensity to slip on the contact surface. Interestingly, there exists a region of |σθθ| ≥ |μ|. Thus, slipping can occur, although the problem is solved under the condition of an adhered contact without slipping. Given that a tribological failure potentially occurs at the slipping region, it is important to determine the size of the slipping region. This aspect is also factored in the paper. A simple example of the adhered contact between two elastically dissimilar squares is considered. Finite element analysis is used to evaluate generalized stress intensity factors. Furthermore, it is repeatedly observed that slipping occurs on the contact surface although the size of it is extremely small compared with that of the contacting squares. Therefore, as a contribution to the field of contact mechanics, this problem must be further explained logically.

A Study on Third Body Abrasion in the Small Clearance Region Adjacent to the Contact Area

  • Kim, Hyung-Kyu;Lee, Young-Ho;Heo, Sung-Pil;Jung, Youn-Ho
    • KSTLE International Journal
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    • v.4 no.1
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    • pp.8-13
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    • 2003
  • Abrasion in fretting wear mechanism is studied experimentally with the specimens of two different shapes of spacer grid spring and fuel tubes of a nuclear fuel. Reciprocating sliding wear test has been carried out in the environment of air and water at room temperature. Especially, third body abrasion is referred to for explaining the wear region expansion found during the slip displacement increase with constant normal contact farce. It is found that the expansion behaviour depends on the contact shape. The small clearance between the tube and spring seems to be the preferable region of the wear particle accumulation, which causes third body abrasion of the non-contact area. Even in water environment the third body abrasion occurs apparently. Since the abrasion on the clearance contributes wear volume, the influence of the contact shape on the severity of third body abrasion should be considered to improve the grid spring design in the point of restraining wear damage of a nuclear fuel.

Frictionless contact problem for a layer on an elastic half plane loaded by means of two dissimilar rigid punches

  • Ozsahin, Talat Sukru
    • Structural Engineering and Mechanics
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    • v.25 no.4
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    • pp.383-403
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    • 2007
  • The contact problem for an elastic layer resting on an elastic half plane is considered according to the theory of elasticity with integral transformation technique. External loads P and Q are transmitted to the layer by means of two dissimilar rigid flat punches. Widths of punches are different and the thickness of the layer is h. All surfaces are frictionless and it is assumed that the layer is subjected to uniform vertical body force due to effect of gravity. The contact along the interface between elastic layer and half plane will be continuous, if the value of load factor, ${\lambda}$, is less than a critical value, ${\lambda}_{cr}$. However, if tensile tractions are not allowed on the interface, for ${\lambda}$ > ${\lambda}_{cr}$ the layer separates from the interface along a certain finite region. First the continuous contact problem is reduced to singular integral equations and solved numerically using appropriate Gauss-Chebyshev integration formulas. Initial separation loads, ${\lambda}_{cr}$, initial separation points, $x_{cr}$, are determined. Also the required distance between the punches to avoid any separation between the punches and the layer is studied and the limit distance between punches that ends interaction of punches, is investigated. Then discontinuous contact problem is formulated in terms of singular integral equations. The numerical results for initial and end points of the separation region, displacements of the region and the contact stress distribution along the interface between elastic layer and half plane is determined for various dimensionless quantities.

Characterization of Reverse Leakage Current Mechanism of Shallow Junction and Extraction of Silicidation Induced Schottky Contact Area for 0.15 ${\mu}{\textrm}{m}$ CMOS Technology Utilizing Cobalt Silicide (코발트 실리사이드 접합을 사용하는 0.15${\mu}{\textrm}{m}$ CMOS Technology에서 얕은 접합에서의 누설 전류 특성 분석과 실리사이드에 의해 발생된 Schottky Contact 면적의 유도)

  • 강근구;장명준;이원창;이희덕
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.10
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    • pp.25-34
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    • 2002
  • In this paper, silicidation induced Schottky contact area was obtained using the current voltage(I-V) characteristics of shallow cobalt silicided p+-n and n+-p junctions. In reverse bias region, Poole-Frenkel barrier lowering influenced predominantly the reverse leakage current, masking thereby the effect of Schottky contact formation. However, Schottky contact was conclusively shown to be the root cause of the modified I-V behavior of n+-p junction in the forward bias region. The increase of leakage current in silicided n+-p diodes is consistent with the formation of Schottky contact via cobalt slicide penetrating into the p-substrate or near to the junction area and generating trap sites. The increase of reverse leakage current is proven to be attributed to the penetration of silicide into depletion region in case of the perimeter intensive n+-p junction. In case of the area intensive n+-p junction, the silicide penetrated near to the depletion region. There is no formation of Schottky contact in case of the p+-n junction where no increase in the leakage current is monitored. The Schottky contact amounting to less than 0.01% of the total junction was extracted by simultaneous characterization of forward and reverse characteristics of silicided n+-p diode.

Prevalence of dental implant positioning errors: A cross-sectional study

  • Gabriel, Rizzo;Mayara Colpo, Prado;Lilian, Rigo
    • Imaging Science in Dentistry
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    • v.52 no.4
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    • pp.343-350
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    • 2022
  • Purpose: This study evaluated the prevalence of dental implant positioning errors and the most frequently affected oral regions. Materials and Methods: A sample was obtained of CBCT images of 590 dental implants from 230 individuals who underwent diagnosis at a radiology center using cone-beam computed tomography from 2017 to 2020. The following variables were considered: thread exposure, violation of the minimum distance between 2 adjacent implants and between the implant and tooth, and implant contact with anatomical structures. Descriptive data analysis and the Pearson chi-square test(P<0.05) were performed to compare findings according to mouth regions. Results: Most (74.4%) of the 590 implants were poorly positioned, with the posterior region of the maxilla being the region most frequently affected by errors. Among the variables analyzed, the most prevalent was thread exposure (54.7%), followed by implant contact with anatomical structures, violation of the recommended distance between 2 implants and violation of the recommended distance between the implant and teeth. Thread exposure was significantly associated with the anterior region of the mandible (P<0.05). The anterior region of the maxilla was associated with violation of the recommended tooth-implant distance (P<0.05) and the recommended distance between 2 adjacent implants(P<0.05). Implant contact with anatomical structures was significantly more likely to occur in the posterior region of the maxilla (P<0.05). Conclusion: Many implants were poorly positioned in the posterior region of the maxilla. Thread exposure was particularly frequent and was significantly associated with the anterior region of the mandible.

Analysis of Contact Tractions influenced by Edge Machining (모서리가공에 따른 접촉응력 해석)

  • Kim, Hyung-Kyu;Kang, Heung-Seok;Yoon, Kyung-Ho;Song, Kee-Nam
    • Proceedings of the KSME Conference
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    • 2001.11a
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    • pp.389-395
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    • 2001
  • To restrain contact failure, present study investigates the influence of edge machining of an indenter (punch). As for the edge machining, rounding, chamfering, and chamfering and rounding are considered. Contact mechanics is consulted to examine the traction profile and the size of the contact region which are directly influenced by the end profile of the indenter. The effect of rounding size (i.e., radius) in the case of the chamfering and rounding edge-indenter is studied. Shear traction is also evaluated within the regime of partial slip. Size of slip region and its expansion rate due to the increase of shear force are considered to investigate the shape effect of the indenter on contact failure.

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