• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.1027-1031
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• 2001

A new constant growth technique to conserve an initial grating height of V-groove AlGaAs/InGaAs quantum nanostructures above 1.0 $\mu\textrm{m}$ thickness has been successfully embodied on submicron gratings using low pressure metalorganic chemical vapor deposition. A GaAs buffer prior to an AlGaAs barrier layer on submicron gratings plays an important role in overcoming mass transport effects and improving the uniformity of gratings. Transmission electron microscopy (TEM) image shows that high-density V-groove InGaAs quantum wires (QWRs) are well confined at the bottom of gratings. The photoluminescence (PL) peak of the InGaAs QWRs is observed in the temperature range from 10 to 280 K with a relatively narrow full width at half maximum less than 40 meV at room temperature PL. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystal.

• 열처리공학회지
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• 제10권2호
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• pp.121-127
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• 1997

In order to elucidate thermal stability of Fe-$Fe_2Ti$ eutectic structure, the initial several structures have been investigated in the changes of coarsening and spheroidization during prolonged annealing under the eutectic temperature. The results are as follows: 1) The rate constant of coarsening and spheroidization was formulated as $S^{-n}-S_0^{-n}=k{\cdot}t$, where S is the total area of the interface between ${\alpha}$ and C($Fe_2Ti$) per unit volume, $S_0$ is initial value and k is the rate constant. 2) The coarsening and spheroidization mechanism was described by Ostwald ripening and controlled by diffusion of Ti-atom in ${\alpha}$-phase. 3) The spheroidization rate constant in eutectic lamellar structures was depended upon annealing temperature and showed the Arrhenius relation. The activation energy for spheroidization of lamellar structure was 365 kJ/mole.

• 반도체디스플레이기술학회지
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• 제5권4호
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• pp.5-9
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• 2006

The SCT thin films are deposited on Pt-coated electrode($Pt/TiN/SiO_2/Si$) using RF sputtering method with Sr/Ca ratio. The maximum grain of thin films is obtained by ratio of Ca at 15 mol%. The dielectric constant was increased with increasing the ratio of Ca, while it was decreased if the ratio of Ca exceeded over 15 mol%. The dielectric constant changes almost linearly in temperature ranges of $-80{\sim}+90$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200 kHz. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the measuring temperature increases.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.254-255
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• 2008

In this study, electrical properties of polyethylene of raised temperature resistance (PE-RT) have been studied through an examination of AC conductivity, dielectric constant, and space charge distributions. A dielectric constant was investigated by Dielectric Analyzer (DEA). Measurements of space charge distributions for PE-RT were carried out using Pulsed Electroacoustic (PEA) techniques, and it was possible to observe the negative charge near the cathode overlapped with the positive induced charge peak, the polarity of which remains unchanged after a short circuit.

• 대한전기학회논문지
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• 제43권5호
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• pp.789-794
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• 1994

In this study, the structural and microwave dilelectric properties of 0.15BaO-0.15SmS12TOSI3T-0.7TiOS12T ceramics with sintering and annealing conditions were investigated. In the specimen sintered at 1350 [$^{\circ}C$], dielectric constant and quality factor were good values of 80.19,2006 (fS10T=4.6851[GHz]). To improve the $\tau$S1fT of specimen which was manufactured by the optimumsintering condition (1350[$^{\circ}C$],2[Hr.]), annealed from 2[hr.] to 16[hr.] at the annealing temperature of 1200 [$^{\circ}C$]. Increasing the annealing time, dielectric constant was almost constant and quality factor was increased. In the specimen of 4[hr.] annealed, the temperature coefficient of resonant frequency was minimum value, and increased with increasing the annealing time.

• International Journal of Automotive Technology
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• 제6권2호
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• pp.79-85
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• 2005

This work is to investigate the surface heat flux and combustion characteristics of premixed propane mixture in a constant volume chamber. The experiment of heat flux and combustion characteristics of premixed propane mixture are performed with various equivalence ratio and initial pressure conditions. Based on the experimental results, it is found that the maximum instantaneous temperature is increased with the increase of initial pressure in the chamber. There are significant differences in the burning velocity of premixed propane mixture at different measuring points in the constant volume combustion chamber. A]so, the trends of temperature difference at each measuring points are similar to the burning velocity in the combustion chamber. It is concluded that the total heat loss during the combustion period is affected by the equivalence ratio and the initial condition of fuel-air mixture.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.224-225
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• 2007

The Low dielectric properties of epoxy/Annealing $SiO_2$ composites using Annealing new material of nanosized amorphous particles were investigated as function frequency, temperature and filler contents composition. The dielectric constant decrease with increasing frequency and also increase with increasing ambient temperature. The dielectric constant decrease with increase annealing filler contents for epoxy base. The result of x-ray diffraction could obtained single crystal of annealing $SiO_2$ from 500nm amorphous $SiO_2$ powder.

• 한국전기전자재료학회논문지
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• 제25권11호
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• pp.926-929
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• 2012

The $Sr_{0.7}Bi-{2.3}Nb_2O_9$(SBNO) thin films were deposited on Si substrate by RF magnetron sputtering method at $300^{\circ}C$ of substrate temperature. And the SBNO thin films were annealed at $650{\sim}800^{\circ}C$ using RTA (rapid thermal annealing). The grain of SBNO thin films were increased with the increase of annealing temperature. The dielectric constant (100) of SBNO thin film was obtained by RTA above $750^{\circ}C$. The voltage dependence of dielectric loss showed a value within 0.03 in voltage ranges of -5~+5 V. Also, the dielectric constant characteristics showed a stable value with the increase of frequency.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.461-461
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• 2010

For a low dielectric constant inter-metal dielectric application, the low-k SiCOH film with a dielectric constant of 2.8-3.2 has been deposited by plasma-enhanced chemical vapor deposition with decamethylcyclopentasiloxane, cyclohexane, and helium which is carrier gas. In this work, we investigated chemical deposition rate, dielectric constant, characterization of plasma polymer films according to temperature(25C-200C) of substrate and change of component concentration. We measured impedance by using V-I prove during process. From experimental result, deposition rate decrease with increasing temperature. Through real time impedance analysis of chamber, we find corelation between film thickness and impedance by assuming equivalent circuit.

• Elastomers and Composites
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• 제53권4호
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• pp.195-201
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• 2018

Three kinds of rubber compounds were prepared, and their underwater acoustical properties were investigated for anechoic coating. Dynamic mechanical properties of the rubber compounds were measured using a dynamic mechanical analyzer and extended to 100 kHz using time-temperature superposition. The sound speed, reflection coefficient, and attenuation constant were calculated. Silicone rubber showed the lowest reflection coefficient, and nitrile rubber showed the highest attenuation constant. The acoustic properties of nitrile rubber compounds with various compositions were investigated. The sound speed, reflection coefficient, and transmission coefficient of the nitrile rubber in the frequency range of 200-1000 kHz were measured in a water-filled tank.