• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.335-335
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• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.43-48
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• 2017

Conductive $Sn_xO_y$ thin films were fabricated via RF reactive sputtering using SnO:Sn (80:20 mol%) composite target. The composite target was used to produce a chemically stable composition of $Sn_xO_y$ thin film while controlling structural defects by chemical reaction between tin and oxygen. During sputtering pressure, RF power, and substrate temperature were fixed, and oxygen partial pressure was varied from 0% to 12%. Annealing process was carried out at $300^{\circ}C$ for 1 hour in vacuum. Except $P_{O2}=0%$ sample, all samples showed the transmittance of 80~90% and amorphous phase before and after annealing. Electrically stable p-type $Sn_xO_y$ thin film with high transmittance was only obtained from the oxygen partial pressure at 12%. The carrier concentration and mobility for the $P_{O2}=12%$ were $6.36{\times}10^{18}cm^{-3}$ and $1.02cm^2V^{-1}s^{-1}$ respectively after annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.329-329
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• 2007

Photoconductive poly crystalline lead oxide coated on amorphous thin film transistor (TFT) arrays is the best candidate for direct digital x-ray detector for medical imaging. Thicker films with lessening density often show lower x-ray induced charge generation and collection becomes less efficient. In this work, we present a new methodology used for the high density deposition of PbO. We investigate the structural properties of the films using X-ray diffraction and electron microscopy experiments. The film coatings of approximately $200\;{\mu}m$ thickness were deposited on $2"{\times}2"$ conductive-coated glass substrates for measurements of dark current and x-ray sensitivity. The lead oxide (PbO) films of $200\;{\mu}m$ thickness were deposited on glass substrates using a wet coating process in room temperature. The influence of post-deposition annealing on the characteristics of the lead oxide films was investigated in detail. X-ray diffraction and scanning electron microscopy, and atomic force microscopy have been employed to obtain information on the morphology and crystallization of the films. Also we measured dark current, x-ray sensitivity and linearity for investigation of the electrical characteristics of films. It was found that the annealing conditions strongly affect the electrical properties of the films. The x-ray induced output charges of films annealed in oxygen gas increases dramatically with increasing annealing temperatures up to $500^{\circ}C$ but then drops for higher temperature anneals. Consequently, the more we increase the annealing temperatures, the better density and film quality of the lead oxide. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to change the detection properties of the lead oxide film significantly. Post-deposition thermal annealing is also used for densely film. The PbO films that are grown by new methodology exhibit good morphology of high density structure and provide less than $10\;pA/mm^2$ dark currents as they show saturation in gain (at approximate fields of $4\;V/{\mu}m$). The ability to operate at low voltage gives adequate dark currents for most applications and allows voltage electronics designs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.71-71
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• 2012

Chemically modified graphene has been great interest for the application of printed electronics using solution prossesable technique. Here, we demonstrate a large area graphene exfoliation method with fewer defects on the basal plane by application of shear stress in solution to obtain high quality reduced graphene oxide (RGO). Moreover, we introduce a novel route to preparing highly concentrated and conductive RGO in various solvents by monovalent cation-${\pi}$ interaction. Noncovalent binding forces can be induced between a monopole (cation) and a quadrupole (aromatic ${\pi}$ system). The stability of this RGO dispersion was more sensitive to the strength of the cation-${\pi}$ interactions than to the cation-oxygen functional group interactions. The RGO film prepared without a post-annealing process displayed superior electrical conductivity of 97,500 S/m. Our strategy can facilitate the development of large scalable production methods for preparing printed electronics made from high-quality RGO nanosheets.

• Journal of the Korean Ceramic Society
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• v.32 no.2
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• pp.248-256
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• 1995

The electrical conducton in the sintered 3Bi2O3.WO3 solid electrolyte was investigated by measuring the conductivity and ionic transport number. The electrical conductivity was about three to ten times higher than that of YSZ at temperatures between 300 and 80$0^{\circ}C$. D.C. polarization method confirmed that 3Bi2O3.WO3 was predominantly an ionic conductor. Unlike the instability of high conductive fcc phase in the rare-earth oxide-Bi2O3 or Y2O3-Bi2O3 systems at temperature below $700^{\circ}C$, fcc phase in the 3Bi2O3.WO3 exhibited no transformation even after annealing over 900 hrs at 600 and $650^{\circ}C$. Two samples which had different grain sizes showed almost the same conductivity. This result suggests that the electrical properties of grain and grain boundry were very similar.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.468-468
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• 2013

Self-assembled silver nanoparticles were synthesized on a graphene film to investigate plasmonic effect. Graphene was synthesized on glass substrate using chemical vapor deposition method and transfer process. Silver nanoparticles were formed using thermal evaporator and post-annealing process. The shape of silver nanoparticles was measured using a scanning electron microscopy. The resonance wavelength of plasmonic effect on graphene-silver nanoparticles was measured using transmittance spectra. The plasmon resonance wavelength was increased from 400 nm to 424 nm according to the lateral dimension of silver nanoparticles. Also we confirmed a strong plasmon effect form Raman spectra, which were measured on graphene-silver nanoparticles. The result shows that plasmon resonance wavelength could be controlled by lateral dimension of silver nanoparticles, and transparent conductive films based on plasmonic graphene could be developed.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1432-1435
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• 2006

We report on carbon nano-fibers (CNFs) for applying to epoxy as a highly thermal conductive adhesive. In order to fabricate CNFs, electro-spinning process was performed with polyacrylonitrile (PAN) solutions. The sample was stabilized at the annealing temperature of $360^{\circ}C$, and carbonized from 900 to $1100^{\circ}C$. It is shown that the synthesized CNFs have a good thermal conductivity of several hundred W/m K. LED backlight units (BLUs) fabricated with MPCB using CNF-mixed epoxy give a better heat dissipation and higher performance than normal LED BLUs. On the basis of SEM, XRD, and FTIR, the characteristics of CNFs are described.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.446-447
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• 2007

Aluminisum-doped zinc oxide (AZO) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with indium tin oxide (ITO). In our paper, AZO films have been deposited on glass (coming 1737) substrates by RF magnetron sputtering. The AZO film was post-annealed at $600^{\circ}C$, $800^{\circ}C$ for 2 hr with $N_2$ atmosphere, respectively. We investigated that the electric properties and qualitative analysis of AZO films, which measured using the methods of Hall effect, X-ray photoelectron spectroscopy (XPS).

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.19 no.1
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• pp.63-71
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• 2020

Recently, to improve convenience, flexible electronics are quickly being developed for a number of application areas. Flexible electronic devices comprise characters such as being bendable, stretchable, foldable, and wearable. Effectively manufacturing flexible electronic devices requires high efficiency, low costs, and simple processes for manufacturing technology. Through this study, we enabled the rapid production of multifunctional flexible bending sensors using a simple, low-cost Fused Deposition Modeling (FDM) 3D printer. Furthermore, we demonstrated the possibility of the rapid production of a range of functional flexible bending sensors using a simple, low-cost FDM 3D printer. Accurate and reproducible functional materials made by FDM 3D printers are an effective tool for the fabrication of flexible sensor electronic devices. The 3D-printed flexible bending sensor consisted of polyurethane and a conductive filament. Two patterns of electrodes (straight and Hilbert curve) for the 3D printing flexible sensor were fabricated and analyzed for the characteristics of bending displacement. The experimental results showed that the straight curve electrode sensor sensing ability was superior to the Hilbert curve electrode sensor, and the electrical conductivity of the Hilbert curve electrode sensor is better than the straight curve electrode sensor. The results of this study will be very useful for the fabrication of various 3D-printed flexible sensor devices with multiple degrees of freedom that are not limited by size and shape.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.168-174
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• 2016

A conductive oxide-based sapphire glass indium tin oxide/metal electrode and the optical coating, through patterning process was studied in excellent optical properties and integrated touch panel has a high strength. Indium tin oxide conductive oxides of the sapphire glass to 0.3 A at DC magnetron sputtering method of 10 min, gas flow Ar 10 Sccm Ar, $O_2$ 1.0 Sccm the formation conditions of the thin film after annealing at $550^{\circ}C$ for 30min was achieved through a 86% transmittance. In addition, the coating 130 nm hollow silica sol-gel was to improve the optical transmittance of the indium tin oxide to 91%. For the measurement by the modeling hollow silica sol by Macleod simulation and calculated the average values of silica part to the presence or absence in analogy to actual. Refractive index value and the actual value of the material on the simulation the transmittance difference is it does not completely match the air region similar to the actual value (transmission) could be confirmed that the measurement is set to a value of between 5 nm and 10 nm.