• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.229-229
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• 2010

With the scaling down of ultra large integrated circuits (ULSI) to the sub-50 nm technology node, the need for an ultra-thin, continuous and conformal diffusion barrier and Cu seed layer is increasing. However, diffusion barrier and Cu seed layer formation with a physical vapor deposition (PVD) method has become difficult as the technology node is reduced to 30 nm and beyond. Recent work on self-forming barrier processes using PVD Cu alloys have attracted great attention due to the capability of conformal ultra-thin barrier formation using a simple technique. However, as in the case of the conventional barrier and Cu seed layer, PVD of the Cu alloy seed layer will eventually encounter the difficulty in conformal deposition in narrow line trenches and via holes. Atomic layer deposition (ALD) has been known for its good step coverage and precise thickness control, and is a candidate technique for the formation of a thin conformal barrier layer and Cu seed layer. Conformal Cu-Mn seed layers were deposited by plasma enhanced atomic layer deposition (PEALD) at low temperature ($120^{\circ}C$), and the Mn content in the Cu-Mn alloys were controlled form 0 to approximately 10 atomic percent with various Mn precursor feeding times. Resistivity of the Cu-Mn alloy films decreased by annealing due to out-diffusion of Mn atoms. Out-diffused Mn atoms were segregated to the surface of the film and interface between a Cu-Mn alloy and $SiO_2$, resulting in self-formed $MnO_x$ and $MnSi_xO_y$, respectively. No inter-diffusion was observed between Cu and $SiO_2$ after annealing at $500^{\circ}C$ for 12 h, indicating an excellent diffusion barrier property of the $MnSi_xO_y$. The adhesion between Cu and $SiO_2$ was enhanced by the formation of $MnSi_xO_y$. Continuous and conductive Cu-Mn seed layers were deposited with PEALD into 32 nm $SiO_2$ trench, enabling a low temperature process, and the trench was perfectly filled using electrochemical plating (ECD) under conventional conditions. Thus, it is the resultant self-forming barrier process with PEALD Cu-Mn alloy film as a seed layer for plating Cu that has further potential to meet the requirement of the smaller than 30 nm node.

• Korean Journal of Materials Research
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• v.20 no.7
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• pp.356-363
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• 2010

For this paper, we investigated the area specific resistance (ASR) of commercially available ferritic stainless steels with different chemical compositions for use as solid oxide fuel cells (SOFC) interconnect. After 430h of oxidation, the STS446M alloy demonstrated excellent oxidation resistance and low ASR, of approximately 40 $m{\Omega}cm^2$, of the thermally grown oxide scale, compared to those of other stainless steels. The reason for the low ASR is that the contact resistance between the Pt paste and the oxide scale is reduced due to the plate-like shape of the $Cr_2O_3$(s). However, the acceptable ASR level is considered to be below 100 $m{\Omega}cm^2$ after 40,000 h of use. To further improve the electrical conductivity of the thermally grown oxide on stainless steels, the Co layer was deposited on the stainless steel by means of an electroless deposition method; it was then thermally oxidized to obtain the $Co_3O_4$ layer, which is a highly conductive layer. With the increase of the Co coating thickness, the ASR value decreased. For Co deposited STS444 with 2 ${\mu}m$hickness, the measured ASR at $800^{\circ}$ after 300 h oxidation is around 10 $m{\Omega}cm^2$, which is lower than that of the STS446M, which alloy has a lower ASR value than that of the non-coated STS. The reason for this improved high temperature conductivity seems to be that the Mn is efficiently diffused into the coating layer, which diffusion formed the highly conductive (Mn,Co)$_3O_4$ spinel phases and the thickness of the $Cr_2O_3$(S), which is the rate controlling layer of the electrical conductivity in the SOFC environment and is very thin

• Analytical Science and Technology
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• v.15 no.2
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• pp.108-114
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• 2002

The new system using a glow discharge atomic emission spectrometer for the direct analysis of solid samples has been developed and characterized. The system was consisted of new glow discharge cell improved previous gas-jet boosted nozzle and radio-frequency power supply. In the case of previous type glow discharge chamber, it had been fitted trace analysis of low alloy steel with low discharge power, because it was to decrease redeposition and increase sample weight loss. But it had a problem that plasma becomes unstale due to increased sample weight loss and redeposition resulting from the high discharge power. Because of being problem of previous glow discharge, it is impossible to analyze using high power. The modified gas-jet boosted glow discharge to solve this problem would improve to be less sample loss rate of modified nozzle than sample loss rate of previous nozzle on the equal discharge condition, and improve to increase stability of plasma. The effect of discharge parameters such as discharge pressure, gas flow rate and power on the sample loss rate, emission intensity has been studied to find optimum discharge conditions. The calibration curves of Fe were obtained with 3 low-alloy samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.302-305
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• 1995

ITO(indium tin oxide) that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. Nowaday, according to the development of flat panel display such as LCD(Liquid Crystal display, EL(electolumine- scence display), PDP(plasma display panel), ECD(electrocromic display), the higher quality in the low temperature process has been asked to reduce the production cost and to have a good uniformity on a large substrate. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. To reduce the defact in ITO, the effect on ITO by varing the magnetic field intensity and the applied voltage ares studied. the resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140$^{\circ}C$. is 1.6${\times}$10$\^$-1/$\Omega$$.$cm with 85% optical transmission in viaible ray.

• Journal of Electrochemical Science and Technology
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• v.7 no.1
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• pp.58-67
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• 2016

The corrosion behavior of duplex stainless steel AISI 2205 was investigated in ethylene glycol-water mixture in the presence of 50 W/V % LiBr at different concentrations and different temperatures. Cyclic polarization, impedance measurements and Mott-Schottky analysis were used to study the corrosion behavior the semi conductive properties of the passive films. The results showed that with increasing in the ethylene glycol concentration to 10 V/V%, the corrosion rate of the steel alloy substrate increased. In higher concentrations of ethylene glycol, corrosion current of steel decreased. The results of scanning electron microscopy of electrode surface confirmed the electrochemical tests. Electrochemical experiment showed that duplex steel was stable for pitting corrosion in this environment. The increase in the ethylene glycol concentration led to increasing the susceptibility to pitting corrosion. The corrosion current increased as the temperature rise and also pitting potentials and repassivation potentials shifted towards the less positive values as the temperature increased. According to Mott-Schottky analysis, passive films of stainless steel at the different temperatures showed both n-type and p-type semiconductor behavior in different potential.

• Journal of Powder Materials
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• v.24 no.5
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• pp.395-399
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• 2017

Solder paste is widely used as a conductive adhesive in the electronics industry. In this paper, nano and microsized mixed lead-free solder powder (Sn-Ag-Cu) is used to manufacture solder paste. The purpose of this paper is to improve the storage stability using different types of solvents that are used in fabricating the solder paste. If a solvent of sole acetate is used, the nano sized solder powder and organic acid react and form a Sn-Ag-Cu malonate. These formed malonates create fatty acid soaps. The fatty acid soaps absorb the solvents and while the viscosity of the solder paste rises, the storage stability and reliability decrease. When ethylene glycol, a dihydric alcohol, is used the fatty acid soaps and ethylene glycol react, preventing the further creation of the fatty acid soaps. The prevention of gelation results in an improvement in the solder paste storage ability.

• Journal of Korea Foundry Society
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• v.33 no.6
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• pp.242-247
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• 2013

The most widely utilized commercial, aluminum-casting alloys are based on an aluminum-silicon system due to its excellent casting, and good mechanical, properties. Unfortunately, these Al-Si based alloys are inherently poor energy conductors; compared to pure aluminum, because of their high silicon content. This means that they are not suitable for applications demanding high eletrical or thermal conductivity. Therefore, efforts are currently being made to develop new, highly-conductive aluminum-casting alloys containing no silicon. In this research, a number of properties; including potential for castability, were investigated for a number of Al-Fe-Zn-Cu alloys with varying Cu content. As the copper content was increased, the tensile strength of Al-Fe-Zn-Cu alloy tended to increase gradually, while the electrical conductivity was slightly reduced. Fluidity was found to be lower in high-Cu alloys, and susceptibility to hot-cracking was generally high in all the alloys investigated.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.699-707
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• 1995

The material that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. It has many fields of application such as Solar Cell, Liquid Crystal display, Vidicon on T.V, transparent electrical heater, selective optical filter, and a optical electric device , etc. In the recent papers on several TCO( transparent conducting oxide ) material, the study is mainly focusing on ITO(indium tin oxide) because ITO shows good results on both optical and electrical properties. Nowaday, in the development of LCD(Liquid Crystal display), the low temperature process to reduce the production cost and to deposit ITO on polymer substrate (or low melting substrate) has been demanded. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. The resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140.deg. C. is 1.6*10$\^$-4/.ohm..cm with 85% optical transmission in viaible ray.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.3 s.40
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• pp.1-8
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• 2006

Higher density integration and adoption of new materials in advanced electronic package systems result in severe electrochemical reliability issues in microelectronic packaging due to higher electric field under high temperature and humidity conditions. Under these harsh conditions, metal interconnects respond to applied voltages by electrochemical ionization and conductive filament formation, which leads to short-circuit failure of the electronic package. In this work, in-situ water drop test and evaluation of corrosion characteristics for SnPb solder alloys in D.I. water and NaCl solutions were carried out to understand the fundamental electrochemical migration characteristics and to correlate each other. It was revealed that electrochemical migration behavior of SnPb solder alloys was closely related to the corrosion characteristics, and Pb was primarily ionized in both D.I. water and $Cl^{-}$ solutions. The quality of passive film formed at film surface seems to be critical not only for corrosion resistance but also for ECM resistance of solder alloys.

• Corrosion Science and Technology
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• v.6 no.6
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• pp.282-285
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• 2007

Smaller size and higher integration of electronic systems make narrower interconnect pitch not only in chip-level but also in package-level. Moreover electronic systems are required to operate in harsher conditions, that is, higher current / voltage, elevated temperature / humidity, and complex chemical contaminants. Under these severe circumstances, electronic components respond to applied voltages by electrochemically ionization of metals and conducting filament forms between anode and cathode across a nonmetallic medium. This phenomenon is called as the electrochemical migration. Many kinds of metal (Cu, Ag, SnPb, Sn etc) using in electronic packages are failed by ECM. Eutectic SnPb which is used in various electronic packaging structures, that is, printed circuit boards, plastic-encapsulated packages, organic display panels, and tape chip carriers, chip-on-films etc. And the material for soldering (eutectic SnPb) using in electronic package easily makes insulation failure by ECM. In real PCB system, not only metals but also many chemical species are included. And these chemical species act as resources of contamination. Model test systems were developed to characterize the migration phenomena without contamination effect. The serpentine-shape pattern was developed for analyzing relationship of applied voltage bias and failure lifetime by the temperature / humidity biased(THB) test.