• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.229-229
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• 2010

With the scaling down of ultra large integrated circuits (ULSI) to the sub-50 nm technology node, the need for an ultra-thin, continuous and conformal diffusion barrier and Cu seed layer is increasing. However, diffusion barrier and Cu seed layer formation with a physical vapor deposition (PVD) method has become difficult as the technology node is reduced to 30 nm and beyond. Recent work on self-forming barrier processes using PVD Cu alloys have attracted great attention due to the capability of conformal ultra-thin barrier formation using a simple technique. However, as in the case of the conventional barrier and Cu seed layer, PVD of the Cu alloy seed layer will eventually encounter the difficulty in conformal deposition in narrow line trenches and via holes. Atomic layer deposition (ALD) has been known for its good step coverage and precise thickness control, and is a candidate technique for the formation of a thin conformal barrier layer and Cu seed layer. Conformal Cu-Mn seed layers were deposited by plasma enhanced atomic layer deposition (PEALD) at low temperature ($120^{\circ}C$), and the Mn content in the Cu-Mn alloys were controlled form 0 to approximately 10 atomic percent with various Mn precursor feeding times. Resistivity of the Cu-Mn alloy films decreased by annealing due to out-diffusion of Mn atoms. Out-diffused Mn atoms were segregated to the surface of the film and interface between a Cu-Mn alloy and $SiO_2$, resulting in self-formed $MnO_x$ and $MnSi_xO_y$, respectively. No inter-diffusion was observed between Cu and $SiO_2$ after annealing at $500^{\circ}C$ for 12 h, indicating an excellent diffusion barrier property of the $MnSi_xO_y$. The adhesion between Cu and $SiO_2$ was enhanced by the formation of $MnSi_xO_y$. Continuous and conductive Cu-Mn seed layers were deposited with PEALD into 32 nm $SiO_2$ trench, enabling a low temperature process, and the trench was perfectly filled using electrochemical plating (ECD) under conventional conditions. Thus, it is the resultant self-forming barrier process with PEALD Cu-Mn alloy film as a seed layer for plating Cu that has further potential to meet the requirement of the smaller than 30 nm node.

• 한국재료학회지
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• 제20권7호
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• pp.356-363
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• 2010

For this paper, we investigated the area specific resistance (ASR) of commercially available ferritic stainless steels with different chemical compositions for use as solid oxide fuel cells (SOFC) interconnect. After 430h of oxidation, the STS446M alloy demonstrated excellent oxidation resistance and low ASR, of approximately 40 $m{\Omega}cm^2$, of the thermally grown oxide scale, compared to those of other stainless steels. The reason for the low ASR is that the contact resistance between the Pt paste and the oxide scale is reduced due to the plate-like shape of the $Cr_2O_3$(s). However, the acceptable ASR level is considered to be below 100 $m{\Omega}cm^2$ after 40,000 h of use. To further improve the electrical conductivity of the thermally grown oxide on stainless steels, the Co layer was deposited on the stainless steel by means of an electroless deposition method; it was then thermally oxidized to obtain the $Co_3O_4$ layer, which is a highly conductive layer. With the increase of the Co coating thickness, the ASR value decreased. For Co deposited STS444 with 2 ${\mu}m$hickness, the measured ASR at $800^{\circ}$ after 300 h oxidation is around 10 $m{\Omega}cm^2$, which is lower than that of the STS446M, which alloy has a lower ASR value than that of the non-coated STS. The reason for this improved high temperature conductivity seems to be that the Mn is efficiently diffused into the coating layer, which diffusion formed the highly conductive (Mn,Co)$_3O_4$ spinel phases and the thickness of the $Cr_2O_3$(S), which is the rate controlling layer of the electrical conductivity in the SOFC environment and is very thin

• 분석과학
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• 제15권2호
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• pp.108-114
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• 2002

고체 시료를 직접 분석하기 위하여 글로우 방전 원자 방출법을 이용한 새로운 장치를 개발하였다. 이 시스템은 기존의 gas-jet boosted nozzle을 개선한 새로운 방전 셀과 Radio-frequency 전원장치를 사용하였다. 기존의 gas-jet boosted nozzle의 경우 재침전이 적고, 시료 손실량이 많아서 낮은 방전 전력에서 저 합금강의 미량 분석에 적합하였다. 하지만 높은 방전 전력을 사용할 경우 시료 손실량이 많아지고, 재석출(redeposition)이 증가함으로 해서 플라스마가 불안정해지는 단점을 지니고 있었다. 기존의 글로우 방전 셀의 경우 방전 전력을 높일 수록 플라스마의 들뜸 온도가 증가하는 경향을 가진다. 이 때문에 높은 방전 전력에서는 플라스마의 온도가 높아져서 극미량 분석이 가능할 수 있지만, 기존의 노즐 부분에 문제점으로 인해 높은 방전 전력으로 분석하기에는 부적합하였다. 이러한 문제점을 modified gas-jet boosted nozzle은 시료 손실량이 같은 방전 전력에서 기존의 가스 제트 흐름노즐에 비하여 감소하지만 높은 방전 전력에서는 플라스마 안정도가 증가하여 극미량 분석이 가능하도록 개선하였다. 본 시스템은 여러 가지 방전에 미치는 실험 변수인 압력과 가스 흐름량 그리고 방전 전력의 변화에 따른 시료 손실 속도와 방출 세기 등의 변화를 측정하여 최적화 하였으며, 표준 시료 Fe합금을 이용하여서 미량 분석을 하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.302-305
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• 1995

ITO(indium tin oxide) that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. Nowaday, according to the development of flat panel display such as LCD(Liquid Crystal display, EL(electolumine- scence display), PDP(plasma display panel), ECD(electrocromic display), the higher quality in the low temperature process has been asked to reduce the production cost and to have a good uniformity on a large substrate. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. To reduce the defact in ITO, the effect on ITO by varing the magnetic field intensity and the applied voltage ares studied. the resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140$^{\circ}C$. is 1.6${\times}$10$\^$-1/$\Omega$$.$cm with 85% optical transmission in viaible ray.

• Journal of Electrochemical Science and Technology
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• 제7권1호
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• pp.58-67
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• 2016

The corrosion behavior of duplex stainless steel AISI 2205 was investigated in ethylene glycol-water mixture in the presence of 50 W/V % LiBr at different concentrations and different temperatures. Cyclic polarization, impedance measurements and Mott-Schottky analysis were used to study the corrosion behavior the semi conductive properties of the passive films. The results showed that with increasing in the ethylene glycol concentration to 10 V/V%, the corrosion rate of the steel alloy substrate increased. In higher concentrations of ethylene glycol, corrosion current of steel decreased. The results of scanning electron microscopy of electrode surface confirmed the electrochemical tests. Electrochemical experiment showed that duplex steel was stable for pitting corrosion in this environment. The increase in the ethylene glycol concentration led to increasing the susceptibility to pitting corrosion. The corrosion current increased as the temperature rise and also pitting potentials and repassivation potentials shifted towards the less positive values as the temperature increased. According to Mott-Schottky analysis, passive films of stainless steel at the different temperatures showed both n-type and p-type semiconductor behavior in different potential.

• 한국분말재료학회지
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• 제24권5호
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• pp.395-399
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• 2017

Solder paste is widely used as a conductive adhesive in the electronics industry. In this paper, nano and microsized mixed lead-free solder powder (Sn-Ag-Cu) is used to manufacture solder paste. The purpose of this paper is to improve the storage stability using different types of solvents that are used in fabricating the solder paste. If a solvent of sole acetate is used, the nano sized solder powder and organic acid react and form a Sn-Ag-Cu malonate. These formed malonates create fatty acid soaps. The fatty acid soaps absorb the solvents and while the viscosity of the solder paste rises, the storage stability and reliability decrease. When ethylene glycol, a dihydric alcohol, is used the fatty acid soaps and ethylene glycol react, preventing the further creation of the fatty acid soaps. The prevention of gelation results in an improvement in the solder paste storage ability.

• 한국주조공학회지
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• 제33권6호
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• pp.242-247
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• 2013

The most widely utilized commercial, aluminum-casting alloys are based on an aluminum-silicon system due to its excellent casting, and good mechanical, properties. Unfortunately, these Al-Si based alloys are inherently poor energy conductors; compared to pure aluminum, because of their high silicon content. This means that they are not suitable for applications demanding high eletrical or thermal conductivity. Therefore, efforts are currently being made to develop new, highly-conductive aluminum-casting alloys containing no silicon. In this research, a number of properties; including potential for castability, were investigated for a number of Al-Fe-Zn-Cu alloys with varying Cu content. As the copper content was increased, the tensile strength of Al-Fe-Zn-Cu alloy tended to increase gradually, while the electrical conductivity was slightly reduced. Fluidity was found to be lower in high-Cu alloys, and susceptibility to hot-cracking was generally high in all the alloys investigated.

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.699-707
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• 1995

The material that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. It has many fields of application such as Solar Cell, Liquid Crystal display, Vidicon on T.V, transparent electrical heater, selective optical filter, and a optical electric device , etc. In the recent papers on several TCO( transparent conducting oxide ) material, the study is mainly focusing on ITO(indium tin oxide) because ITO shows good results on both optical and electrical properties. Nowaday, in the development of LCD(Liquid Crystal display), the low temperature process to reduce the production cost and to deposit ITO on polymer substrate (or low melting substrate) has been demanded. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. The resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140.deg. C. is 1.6*10$\^$-4/.ohm..cm with 85% optical transmission in viaible ray.

• 마이크로전자및패키징학회지
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• 제13권3호
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• pp.1-8
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• 2006

인쇄회로기판이나 플라스틱 패키지 등 다양한 전자소자 부품내 배선간 간격이 갈수록 좁아짐에 따라 최근 많이 발생하고 있는 electrochemical migration(ECM) 현상은 양극에서 이온화된 금속에 의한 conductive anodic filament(CAF) 및 덴드라이트와 같은 전도성 필라멘트의 성장으로 인해 전자부품의 절연파괴를 일으키고 있다. 본 연구에서는 공정조성 Sn-37Pb솔더 합금의 ECM 거동과 부식특성 사이의 연관성 평가를 통해 ECM 우세원소를 파악하기 위해 D.I Water 및 NaCl 용액에서 Water Drop Test(WDT)와 분극실험을 실시하여 서로 비교하였다. WDT 실시 결과 공정조성 Sn-37Pb 솔더 합금에서 Pb-rich 상이 Sn-rich 상보다 우선적으로 양극 패드에서 녹아나서 상대적으로 ECM 저항성이 낮았으며, 음극패드에서 자라난 덴드라이트에도 Pb가 훨씬 많이 존재하였다. NaCl에서의 분극실험 결과 전기화학적으로 부동태 피막을 형성하는 Sn에 비해 Pb의 부식속도가 크게 나타났으며, WDT의 결과와 같은 경향을 보였다. 따라서 공정조성 SnPb 솔더 합금의 부식저항성과 ECM 저항성 사이에는 좋은 상관관계가 존재한다.

• Corrosion Science and Technology
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• 제6권6호
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• pp.282-285
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• 2007

Smaller size and higher integration of electronic systems make narrower interconnect pitch not only in chip-level but also in package-level. Moreover electronic systems are required to operate in harsher conditions, that is, higher current / voltage, elevated temperature / humidity, and complex chemical contaminants. Under these severe circumstances, electronic components respond to applied voltages by electrochemically ionization of metals and conducting filament forms between anode and cathode across a nonmetallic medium. This phenomenon is called as the electrochemical migration. Many kinds of metal (Cu, Ag, SnPb, Sn etc) using in electronic packages are failed by ECM. Eutectic SnPb which is used in various electronic packaging structures, that is, printed circuit boards, plastic-encapsulated packages, organic display panels, and tape chip carriers, chip-on-films etc. And the material for soldering (eutectic SnPb) using in electronic package easily makes insulation failure by ECM. In real PCB system, not only metals but also many chemical species are included. And these chemical species act as resources of contamination. Model test systems were developed to characterize the migration phenomena without contamination effect. The serpentine-shape pattern was developed for analyzing relationship of applied voltage bias and failure lifetime by the temperature / humidity biased(THB) test.