• Tunnel and Underground Space
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• v.23 no.5
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• pp.442-453
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• 2013

A large-scale high-temperature thermal energy storage(TES) was numerically modeled and the heat loss through storage tank walls was analyzed using a commercial code, FLAC3D. The operations of rock cavern type and above-ground type thermal energy storages with identical operating condition were simulated for a period of five consecutive years, in which it was assumed that the dominant heat transfer mechanism would be conduction in massive rock for the former and convection in the atmosphere for the latter. The variation of storage temperature resulting from periodic charging and discharging of thermal energy was considered in each simulation, and the effect of insulation thickness on the characteristics of heat loss was also examined. A comparison of the simulation results of different storage models presented that the heat loss rate of above-ground type TES was maintained constant over the operation period, while that of rock cavern type TES decreased rapidly in the early operation stage and tended to converge towards a certain value. The decrease in heat loss rate of rock cavern type TES can be attributed to the reduction in heat flux through storage tank walls followed by increase in surrounding rock mass temperature. The amount of cumulative heat loss from rock cavern type TES over a period of five-year operation was 72.7% of that from above-ground type TES. The heat loss rate of rock cavern type obtained in long-period operation showed less sensitive variations to insulation thickness than that of above-ground type TES.

• Journal of Biomedical Engineering Research
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• v.23 no.6
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• pp.467-475
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• 2002

Hyperthermia using transrectal thermal probes has been used for a noninvasive treatment of prostate diseases. However it is known that heating the rectal wall at excessively high temperature can lead to destruction of the rectal mucous membrane. and it is difficult to maintain an optimum temperature over the entire prostate. Thus, a more accurate understanding of the heat transfer mechanism between prostate and hyperthermia system is needed Numerical analysis was performed to investigate how the cold/warm stimulations on the prostate surface affect the temperature distribution in the prostate model. The general purpose software "FLUENT" was used for obtaining a finite volume solution to the unsteady conduction equation and to calculate the time-varying temperature in the prostate. Effects of the warm/cold stimulations and the stimulation frequency on the temperature distribution were simulated. and we visualized how hyperthermia affected the inside of the prostate. It was found that the effect of hyperthermia by using a typical heating method is limited due to the low thermal conductivity of the prostate. Consecutive repetitions of warm and cold stimulations were considered to provide the thermal irritations inside a prostate. The effects of temperature difference and duration of warm/cold stimulations were investigated, and basic data for the optimum period and effective patterns of stimulations were obtained. A simplified bioheat equation was also solved to describe effects of the blood flow on the blood-tissue heat transfer. The effect of blood flow was not dominant compared to that of warm/cold stimulations. These results might be used as data for design of prostate treating probe, prostatic therapy and thermal stimulation effects on the prostate.

• Tunnel and Underground Space
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• v.25 no.2
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• pp.155-167
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• 2015

The thermal-hydrological-mechanical (T-H-M) behavior of rock mass surrounding a high-temperature cavern thermal energy storage (CTES) operated for a period of 30 years has been investigated by TOUGH2-FLAC3D simulator. As a fundamental study for the development of prediction and control technologies for the environmental change and rock mass behavior associated with CTES, the key concerns were focused on the hydrological-thermal multiphase flow and the consequential mechanical behavior of the surrounding rock mass, where the insulator performance was not taken into account. In the present study, we considered a large-scale cylindrical cavern at shallow depth storing thermal energy of $350^{\circ}C$. The numerical results showed that the dominant heat transfer mechanism was the conduction in rock mass, and the mechanical behavior of rock mass was influenced by thermal factor (heat) more than hydrological factor (pressure). The effective stress redistribution, displacement and surface uplift caused by heating of rock and boiling of ground-water were discussed, and the potential of shear failure was quantitatively examined. Thermal expansion of rock mass led to the ground-surface uplift on the order of a few centimeters and the development of tensile stress above the storage cavern, increasing the potential of shear failure.

• Applied Chemistry for Engineering
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• v.8 no.6
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• pp.954-959
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• 1997

The solid solutions of the $Sr_{1-X}M_XFeO_{3-y}$ (x=0.1, 0.2, 0.3, 0.4, 0.5, M=Ca) system having perovskite structures were prepared in air by heat treatment at 1473 K for 18hr. X-ray diffraction assigns cubic system for all the samples and shows that the lattice volume of each system decreases with increasing x value until x=0.3, but increases abruptly from x=0.4. The mole fractions of $Fe^{4+}$ ion($\tau$ value), the amounts of oxygen vacancy (y value) and finally nonstoichiometric chemical formulas for each composition were determined from Mohr salt analysis. TG/DTA thermal analysis (temperature range: 300~1173K) exhibits that 3-y values of the samples having x=0.1 and 0.2, decrease with temperature and increase almost reversibly with decreasing temperature. The samples of $x{\geq}0.3$, however, didn't show the reversible weight change and the 3-y values of them were nearly 2.5 in cooling process. Conductivities of each sample were varied within the semiconductivity range at relatively low temperature. And the conductivity at constant temperature decreases steadily with x value. The conduction mechanism of this ferrite system may be proposed as a hopping model of conducting electrons between the mixed valence states. At high temperature semiconductivity of each sample changed into metallic property.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.81-84
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• 2005

The origin for the charge disproportionation (CD) transition in polycrystalline $La_{1/3}Sr_{2/3}FeO_{2.96}$ was examined using X-ray diffraction and the external field $M\ddot{o}ssbauer$ssbauer spectroscopy. In order to see how the external magnetic field affects the CD state above its transition temperature, an external magnetic field of up to 6 T was applied either parallel or perpendicular to the $\gamma-ray$ direction with the sample temperature fixed at 225 K, which was above the CD transition temperature. Without an external magnetic field, a completely paramagnetic singlet was obtained in the temperature range of the averaged valence state above the transition temperature, which was interpreted as coming from the average valence $Fe^{3.6+}$. In the longitudinal geometry, a magnetic Zeeman with its intensity ratio 3:0:1:1:0:3 is superimposed to the central singlet. In the transverse geometry, however, the central singlet disappears and only a magnetic component with its intensity ratio 3:4:1:1:4:3 emerges. The existence of a singlet is understood as an evidence of the fast electron-transfer among Fe ions. Since the singlet still exists under the magnetic field, the application of an external field has little effect on the conduction mechanism of hopping electrons.

• Journal of the Korean Chemical Society
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• v.28 no.3
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• pp.149-154
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• 1984

The electrical conductivity of p-type yttrium sesquioxide has been measured as a function of temperature and of oxygen partial pressure at temperatures from 650 to 1050$^{\circ}C$C and oxygen partial pressures from $1 {\times}10^{-5}\;to\;2{\times}10^{-1}$atm. Plots of log conductivity vs. 1/T at constant oxygen partial pressures are found to be linear with low-and high-temperature dependences of conductivity. The high-temperature dependence of conductivity shows two different defect structures. The plots of log conductivity vs. log $Po_2$ are found to be linear at $Po_2$'s of $10^{-5}\;to\;10^{-1}$ atm. The electrical conductivity dependences on $Po_2$ are found to be ${{\sigma}{\propto}Po_2}^{1/6}$at $850{\sim}950^{\circ}C,\;{{\sigma}{\propto}Po_2}^{3/16}$ at $950{\sim}1050^{\circ}C\;and\;{{\sigma}{\propto}Po_2}^{1/7.5}{\sim}{{\sigma}{\propto}Po_2}^{1/8.3}\;at\;650{\sim}800^{\circ}C$, respectively. The defect structures are$O_i{''}$ at $850{\sim}950^{\circ}C$ and $V_M{'''}$ at $950{\sim}1050^{\circ}C$. The electron hole is main carrier type, however, ionic contribution is found at lower temperature portion.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.10
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• pp.467-474
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• 2006

The effect of pressureless-sintered temperature on the densification behavior, mechanical and electrical properties of the $SiC-TiB_2$ electroconductive ceramic composites was investigated. The $SiC-TiB_2$ electroconductive ceramic composites were pressureless-sintered for 2 hours at temperatures in the range of $1,750{\sim}1,900[^{\circ}C]$, with an addition of 12[wt%] $Al_2O_3+Y_2O_3(6:4\;mixture\;of\;Al_2O_3\;and\;Y_2O_3)$ as a sintering aid. The relative density, flexural strength, vicker's hardness and fracture toughness showed the highest value of 84.92[%], 140[MPa], 4.07[GPa] and $3.13[MPa{\cdot}m^{1/2}]$ for $SiC-TiB_2$ composites of $1,900[^{\circ}C]$ sintering temperature at room temperature respectively. The electrical resistivity was measured by the Pauw method in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The electrical resistivity showed the value of $5.51{\times}10^{-4},\;2.11{\times}10^{-3},\;7.91{\times}10^{-4}\;and\;6.91{\times}10^{-4}[\Omega{\cdot}cm]$ for ST1750, ST1800, ST1850 and ST1900 respectively at room temperature. The electrical resistivity of the composites was all PTCR(Positive Temperature Coefficient Resistivity). The resistance temperature coefficient showed the value of $3.116{\times}10^{-3},\;2.717{\times}10^{-3},\;2.939{\times}10^{-3},\;3.342{\times}10^{-3}/[^{\circ}C]$ for ST1750, ST1800, ST1850 and ST1900 respectively in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. It is assumed that because polycrystallines, such as recrystallized $SiC-TiB_2$ electroconductive ceramic composites, contain of porosity and In Situ $YAG(Al_5Y_3O_{12})$ crystal grain boundaries, their electrical conduction mechanism are complicated. In addition, because the condition of such grain boundaries due to $Al_2O_3+Y_2O_3$ additives widely varies with sintering temperature, electrical resistivity of the $SiC-TiB_2$ electroconductive ceramic composites with sintering temperature also varies with sintering condition. It is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.8
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• pp.340-346
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• 2002

Capacitor material utilized in the downsizing passive devices and integration of passive devices requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. common capacitor materials, $Al_2O_3$, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$, TaN and et al., used until recently have reached their physical limits in their application to integration of passive devices. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism. This study presents the dielectric properties $Ta_2O_{5}$ MIM capacitor structure Processed by $O_2$ RTA oxidation. X-ray diffraction patterns showed the existence of amorphous phase in $600^{\circ}C$ annealing under the $O_2$ RTA and the formation of preferentially oriented-$Ta_2O_{5}$ in 650, $700^{\circ}C$ annealing and the AES depth profile showed $O_2$ RTA oxidation effect gives rise to the $O_2$ deficientd into the new layer. The leakage current density respectively, at 3~1l$\times$$10_{-2}$(kV/cm) were $10_{-3}$~$10_{-6}$(A/$\textrm{cm}^2$). In addition, behavior is stable irrespective of applied electric field. the frequency vs capacitance characteristic enhanced stability more then $Ta_2O_{5}$ thin films obtained by $O_2$ reactive sputtering. The capacitance vs voltage measurement that, Vfb(flat-band voltage) was increase dependance on the $O_2$ RTA oxidation temperature.

• Proceedings of the KOR-BRONCHOESO Conference
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• 1978.06a
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• pp.8.3-8
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• 1978

In normal auditory systems, the difference between the bone conduction thresholds obtained with the test ear opened and occluded in low frequency signals below 1, 000Hz is about 10~25 dB. But no difference in these thresholds suggests the presence of a lesion in the conductive mechanism. Sullivan added the differences in these thresholds at 250Hz, 500Hz and 1,000Hz and called "Occlusion Index". In oder to study the audiological significance, we have measured the occlusion index in 40 ears of normal persons, 20 ears of chronic otitis media patients and 20 ears of sensori-neural hearing impairment patients. We also measured the static compliance in 40 normal ears and observed the correlation with the occlusion index. The results are as follows: 1. Occlusion index was 33. $10\pm10.63dB$ in normal group, $3.10\pm3.03dB$ in chronic otitis media; group, $28.10\pm15.17dB$ in sensori-neural group. 2. Static compliance in normal group was $0.61\pm0.31cc$ (0.22~1.75cc) 3. Occlusion index showed inverse proportion to static compliance.

• Korean Journal of Materials Research
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• v.18 no.4
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• pp.169-174
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• 2008

The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.