• Title/Summary/Keyword: Conduction Loss

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Development of a Topology for the Power Supply with Reduced Conduction Loss and Swithing Stress (도전손실과 스위칭 스트레스 저감한 전원장치 토폴로지의 개발)

  • 라병훈;권순걸;이현우
    • Proceedings of the IEEK Conference
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    • 2001.06e
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    • pp.245-248
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    • 2001
  • This paper is indicating the problems, which are the conduction loss on the high frequency transformer, the protection of rectification diode as the snubber loss and the stress of switching main devices, as be made high current and high speed in the phase-shift switching full-bridge DC-DC converter is used the power supply’s main circuit of high capacity. To improve those problems, in this paper, it is proposed that is the resonant circuit auxiliary can be reduced conduction losses and stabilized output control. And, it is constructed prototype of the power supply as the result of computer simulations.

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Soft-Switching Half-Bridge Converter using Secondary Switches for Output Control and Conduction Loss Reduction (출력제어와 도통손실 감소를 위해 2차측 스위치를 사용한 소프트스위칭 하프브리지 컨버터)

  • 김영필;김진우;김태웅;이성백
    • Proceedings of the IEEK Conference
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    • 2001.06e
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    • pp.103-106
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    • 2001
  • In this paper, a soft switching half-bridge converter using secondary switches for output control and conduction loss reduction is proposed. The conventional half-bridge converter must be fixed on duty cycle for soft switching. The proposed converter was consisted of two added switches in series of the secondary rectifier diodes. The main switches with constant duty cycle are operated ZVS. The secondary switches are operated ZV-ZCS. Especially, the primary switches were fixed duty cycle for maximum voltage conversion ratio. Output of converter is controlled by duty cycle or phase-shifted time of secondary switches. The conduction loss of the proposed converter can be reduced by the secondary switches. The operation characteristic, analysis, simulation and experimental results of the proposed converter are presented.

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Development of the Power Supply with Reduced Conduction Loss and Switching Stress on the Full-Bridge DC-DC Converter (풀브리지 DC-DC 컨버터의 도전손실과 스위칭 스트레스를 저감한 전원장치 개발)

  • Ra Byung-Hun;Song Dae-Hyun;Kim Kwang-Tae;Lee Hyun-Woo
    • Proceedings of the KIPE Conference
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    • 2001.07a
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    • pp.608-611
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    • 2001
  • This paper is indicating the problems, which are the conduction loss on the high frequency transformer, the protection of rectification diode as the snubber loss and the stress of switching main devices, as be made high current and high speed in the phase-shift switching full-bridge DC-DC converter is used the power supply's main circuit of high capacity. In this paper, to improve those problems, it is proposed that is the resonant circuit auxiliary can be reduced conduction losses and stabilized output control. And, it is constructed prototype of the power supply as the result of computer simulations.

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Analysis on the thermal development of radiatively participating pipe flow with nonaxisymmetric convective heat loss (비축대칭 대류열손실 경계조건하에서 원관내 복사에 관여하는 매질의 층류 열적 발달의 수치해석)

  • ;;Baek, Seung-Wook
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.19 no.11
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    • pp.2995-3002
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    • 1995
  • The cooling problem of the hot internal pipe flow has been investigated. Simultaneous conduction, convection, and radiation were considered with azimuthally varying convective heat loss at the pipe wall. A complex, nonlinear integro-differential radiative transfer equation was solved by the discrete ordinates method (or called S$_{N}$ method). The energy equation was solved by control volume based finite difference technique. A parametric study was performed by varying the conduction-to-radiation parameter, optical thickness, and scattering albedo. The results have shown that initially the radiatively active medium could be more efficiently cooled down compared with the cases otherwise. But even for the case with dominant radiation, as the medium temperature was lowered, the contribution of conduction became to exceed that of radiation.n.

인공심장판막의 현황

  • 김형묵
    • Journal of Biomedical Engineering Research
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    • v.10 no.2
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    • pp.94-96
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    • 1989
  • Explosive evaporative removal process of biological tissue by absorption of a CW laser has been simulated by using gelatin and a multimode Nd:YAG laser. Because the point of maximun temperature of laser-irradiated gelatin exists below the surface due to surface cooling, evaporation at the boiling temperature is made explosively from below the surface. The important parameters of this process are the conduction loss to laser power absorption (defined as the conduction-to-laser power parameter, Nk), the convection heat transfer at the surface to conduction loss (defined as Bi), dimensionless extinction coefficient (defined as Br.), and dimensionless irradiation time (defined as Fo). Dependence of Fo on Nk and Bi has been observed by experiment, and the results have been compared with the numerical results obtained by solving a 2-dimensional conduction equation. Fo and explosion depth (from the surface to the point of maximun temperature) are increased when Nk and Bi are increased.To find out the minimum laser power for explosive evaporative removal process, steady state analysis has been also made. The limit of Nk to induce evaporative removal, which is proportional to the inverse of the laser power, has been obtained.

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The Analysis of Conduction and Switching Losses in Multi-Level Inverter System (멀티레벨 인버터 시스템의 전도손실과 스위칭손실 해석)

  • 金 兌 珍;姜 岱 旭;;玄 東 石
    • The Transactions of the Korean Institute of Power Electronics
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    • v.7 no.2
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    • pp.111-120
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    • 2002
  • The multi-level inverter system is very promising in ac drives, when both reduced harmonic contents and high power are required. In case of multi-level inverter system, the loss of switch devices cannot be analyzed by conventional methods. The reason is that the loss of each the switch device is different from one another unlike 2-level. In this paper, a simple and accurate method of computing conduction and switching loss is proposed for multi-level inverter system. The validity of the proposed method is proven for 3-level and 4-revel diode clamped inverter system.

An auxiliary circuit for reducing loss during free-wheeling interval in FB ZVT PWM converter (FB ZVT PWM 컨버터의 환류구간 손실저감을 위한 보조회로)

  • 윤창선;김병철;김광헌
    • The Transactions of the Korean Institute of Power Electronics
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    • v.5 no.3
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    • pp.209-214
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    • 2000
  • In this paper, we propose a FB ZVT(full bridge zero voltage transition) PWM OC~OC converter which uses a a saturable reactor, instead of two additional switches, to achieve zero voltage switching. The conventional h high frequency phase shifted FB ZVT PWM OC-OC converter has a disadvantage that a circulating current f flows through high frequency transformer and switching devices during the free-wheeling interval. Due to this c circulating current, conduction loss increases. In order to reduce such the loss as this, we propose circuit of r reducing conduction loss at the secondary side of transformer. The operation principles are explained in detail a and the several interesting simulations and experimental results verify the validity of the proposed circuit.

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Suppressing Lateral Conduction Loss of Thin-film Cathode by Inserting a Denser Bridging Layer

  • Park, Jung Hoon;Lee, Seung Hwan;Kim, Hyoungchul;Yoon, Kyung Joong;Lee, Jong-Ho;Han, Seung Min;Son, Ji-Won
    • Journal of the Korean Ceramic Society
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    • v.52 no.5
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    • pp.304-307
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    • 2015
  • To reduce the lateral conduction loss of thin-film-processed cathodes, the microstructure of the thin-film cathode is engineered to contain a denser bridging layer in the middle. By doing so, the characteristic crack-like pores that separate the cathode domains in thin-film-processed cathodes and hamper lateral conduction are better connected and, as a result, the sheet resistance of the cathode is effectively reduced by a factor of 5. This induces suppression of the lateral conduction loss and expansion of the effective current collecting area; the cell performance is improved by more than 30%.

Device Suitability Analysis by Comparing Performance of SiC MOSFET and GaN Transistor in Induction Heating System (유도 가열 시스템에서 SiC MOSFET과 GaN Transistor의 성능 비교를 통한 소자 적합성 분석)

  • Cha, Kwang-Hyung;Ju, Chang-Tae;Min, Sung-Soo;Kim, Rae-Young
    • The Transactions of the Korean Institute of Power Electronics
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    • v.25 no.3
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    • pp.204-212
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    • 2020
  • In this study, device suitability analysis is performed by comparing the performance of SiC MOSFET and GaN Transistor, which are WBG power semiconductor devices in the induction heating (IH) system. WBG devices have the advantages of low conduction resistance, switching losses, and fast switching due to their excellent physical properties, which can achieve high output power and efficiency in IH systems. In this study, SiC and GaN are applied to a general half-bridge series resonant converter topology to compare the conduction loss, switching loss, reverse conduction loss, and thermal performance of the device in consideration of device characteristics and circuit conditions. On this basis, device suitability in the IH system is analyzed. A half-bridge series resonant converter prototype using the SiC and GaN of a 650-V rating is constructed to verify device suitability through performance comparison and verified through an experimental comparison of power loss and thermal performance.

Simulation and Analysis of Losses of Switching Device for Single Grid-connected Full Bridge Inverter (단상 계통 연계형 풀브릿지 인버터의 스위치 손실 모의 및 분석)

  • Son, Myeongsu;Lim, Hyun-Ji;Cho, Younghoon
    • The Transactions of the Korean Institute of Power Electronics
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    • v.23 no.4
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    • pp.294-297
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    • 2018
  • This paper analyzes the losses of the switching device for a full bridge inverter connected to the grid. As the development of power conversion system, losses are dominant factors in judging the efficiency of a system. The losses of a switching device can be divided into switching loss and conduction loss, both of which can be estimated by analyzing periodic switching waveform. The switching loss is generated when the switch is turned on and off, while the conduction loss is generated when the switch is turned on. The estimated losses of the MOSFET switch are compared with the simulation results.