• Title/Summary/Keyword: Compound layer

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Air-sparging Technology for Remediation of Specific Aquifer Layer Using Surfactant (계면활성제를 이용한 오염대수층의 선택적 폭기기술)

  • Kim, Heon-Ki;Song, Young-Su;Kwon, Han-Joon
    • Journal of Soil and Groundwater Environment
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    • v.13 no.6
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    • pp.23-30
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    • 2008
  • Air sparging technique has been used for remediation of VOC(volatile organic compound)-contaminated aquifer. The aim of this study was to develop an innovative air sparging technique that enhances the efficiency of air intrusion into a specific horizontal layer of aquifer where the contaminants exist with the help of water-soluble surfactant. A twodimensional physical box model, packed with homogeneous sand, was used for simulating the aquifer in this study. Aqueous solution of anionic surfactant (100 mg/L, sodium dodecylbenzene sulfonate) was used to suppress the surface tension of groundwater. Three sets of experiments were conducted: air sparging experiment without surfactant application, air sparging experiments for box model where the surfactant solution was applied right above the air injection point, and air sparging experiments with surfactant solution layer formed in the middle of the box. It was found that the sparging influence zone was expanded up to five times of that formed by sparging without surfactant application. The size of sparging influence zone was more sensitive to the air flow (injection) rate with surfactant application than that without surfactant. More importantly, injection of air into the target aquifer layer was successful with surfactant application. Findings in this study are expected to provide more options for designing remediation processes using air sparging.

Flexible InGaP/GaAs Double-Junction Solar Cells Transferred onto Thin Metal Film (InGaP/GaAs 이중접합 기반의 고효율 플렉시블 태양전지 제조기술 연구)

  • Moon, Seungpil;Kim, Youngjo;Kim, Kangho;Kim, Chang Zoo;Jung, Sang Hyun;Shin, Hyun-Beom;Park, Kyung Ho;Park, Won-Kyu;Ahn, Yeon-Shik;Kang, Ho Kwan
    • Current Photovoltaic Research
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    • v.4 no.3
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    • pp.108-113
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    • 2016
  • III-V compound semiconductor based thin film solar cells promise relatively higher power conversion efficiencies and better device reliability. In general, the thin film III-V solar cells are fabricated by an epitaxial lift-off process, which requires an $Al_xGa_{1-x}As$ ($x{\geq}0.8$) sacrificial layer and an inverted solar cell structure. However, the device performance of the inversely grown solar cell could be degraded due to the different internal diffusion conditions. In this study, InGaP/GaAs double-junction solar cells are inversely grown by MOCVD on GaAs (100) substrates. The thickness of the GaAs base layer is reduced to minimize the thermal budget during the growth. A wide band gap p-AlGaAs/n-InGaP tunnel junction structure is employed to connect the two subcells with minimal electrical loss. The solar cell structures are transferred on to thin metal films formed by Au electroplating. An AlAs layer with a thickness of 20 nm is used as a sacrificial layer, which is removed by a HF:Acetone (1:1) solution during the epitaxial lift-off process. As a result, the flexible InGaP/GaAs solar cell was fabricated successfully with an efficiency of 27.79% under AM1.5G illumination. The efficiency was kept at almost the same value after bending tests of 1,000 cycles with a radius of curvature of 10 mm.

Hexagonal Boron Nitride Monolayer Growth without Aminoborane Nanoparticles by Chemical Vapor Deposition

  • Han, Jaehyu;Yeo, Jong-Souk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.409-409
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    • 2014
  • Recently hexagonal boron nitride (h-BN), III-V compound of boron and nitrogen with strong covalent $sp^2$ bond, is a 2 dimensional insulating material with a large direct band gap up to 6 eV. Its outstanding properties such as strong mechanical strength, high thermal conductivity, and chemical stability have been reported to be similar or superior to graphene. Because of these excellent properties, h-BN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Ultra flat and charge impurity-free surface of h-BN is also an ideal substrate to maintain electrical properties of 2 dimensional materials such as graphene. To synthesize a single or a few layered h-BN, chemical vapor deposition method (CVD) has been widely used by using an ammonia borane as a precursor. Ammonia borane decomposes into hydrogen (gas), monomeric aminoborane (solid), and borazine (gas) that is used for growing h-BN layer. However, very active monomeric aminoborane forms polymeric aminoborane nanoparticles that are white non-crystalline BN nanoparticles of 50~100 nm in diameter. The presence of these BN nanoparticles following the synthesis has been hampering the implementation of h-BN to various applications. Therefore, it is quite important to grow a clean and high quality h-BN layer free of BN particles without having to introduce complicated process steps. We have demonstrated a synthesis of a high quality h-BN monolayer free of BN nanoparticles in wafer-scale size of $7{\times}7cm^2$ by using CVD method incorporating a simple filter system. The measured results have shown that the filter can effectively remove BN nanoparticles by restricting them from reaching to Cu substrate. Layer thickness of about 0.48 nm measured by AFM, a Raman shift of $1,371{\sim}1,372cm^{-1}$ measured by micro Raman spectroscopy along with optical band gap of 6.06 eV estimated from UV-Vis Spectrophotometer confirm the formation of monolayer h-BN. Quantitative XPS analysis for the ratio of boron and nitrogen and CS-corrected HRTEM image of atomic resolution hexagonal lattices indicate a high quality stoichiometric h-BN. The method presented here provides a promising technique for the synthesis of high quality monolayer h-BN free of BN nanoparticles.

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Tributyltin chloride (TBTCl) toxicity on the survival rate and burrowing activity of the equilateral venus, Gomphina veneriformis (Bivalvia: Veneridae) (대복, Gomphina veneriformis의 생존 및 저질 잠입성에 미치는 TBTCl의 독성)

  • Park, Jung-Jun;Jin, Young-Guk;Lee, Jung-Sick
    • Journal of fish pathology
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    • v.21 no.1
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    • pp.45-56
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    • 2008
  • This study was conducted to find out biological responses of bivalves exposed to organotin compound.The results of the study confirmed that tribultyltin chloride (TBTCl) induce reduction of survival rate andburrowing activity, and histopathological feature in the foot structure of the equilateral venus, Gomphinaveneriformis. The experimental period was 36 weeks. The experimental groups consisted of a control and 3TBTCl exposure groups (0.4, 0.6, 0.8 ym TBTCl L'). The survival rate and burrowing activity were record-ed daily. For histological analysis, foot tissues were fixed in Bouin' s fluid and then stained H-E stain, AB-PAS (PH 2.5) reaction and Masson's trichrome stain after having serially sectioned the tissue by paraffinmethod at thickness of 4-6 ym. The survival rate was not significantly different between the control andexposure groups for 20 weeks, but in 0.8 Um TBTCl L', it was on the decreased ever since the exposure. Theburrowing activity was not significantly different in the exposure group compared to the control up to 12weeks, but in 0.6 and 0.8 ym TBTCl L', it measured the lowest level after 20 weeks. The foot is composedof the epidermal layer, connective tissue, and muscular layer. The epidermal layer is composed of simplecolumnar, cuboidal epithelia and mucous cells. The cilia were well developed on the apical surface ofepithelium, Circular, longitudinal and transverse muscle bundle were well developed in the muscular layer.The majority mucous cells showed blue color (542c) when it subjected to AB-PAS (PH 2.5) reaction. Nohistopathological alterations in the foot were observed up to 12 weeks. After 20 weeks of exposure to 0.8 (anTBTCl L'', the foot samples of exposed G. veneriformis showed disappearance of cilia and striated borderpartially and extension of hemolymph sinus. The mucous cell increased in the marginal of foot. At 28-weekof exposure to 0.4 ym TBTCl L', it observed weekly acid (564c), neutral (264c) and mixed mucous cell. At36-week of exposure to 0.6 ym TBTCl L', it showed fragmentation of the muscle and collagen fiber bundle,and also diappearance of cilia on epithelia and edema of epithelium in 0.8 ym TBTCl L''.

The Impact of the Morphological Characteristics of Leaves on Particulate Matter Removal Efficiency of Plants

  • Son, Deokjoo;Kim, Kwang Jin;Jeong, Na Ra;Yun, Hyung Gewon;Han, Seung Won;Kim, Jeongho;Do, Gyung-Ran;Lee, Seon Hwa;Shagol, Charlotte C.
    • Journal of People, Plants, and Environment
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    • v.22 no.6
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    • pp.551-561
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    • 2019
  • This study was conducted to find out differences in the removal efficiency of particulate matter (PM) depending on the type of plants and the morphological characteristics of leaves. A total of 12 plants were used, with three plants selected for each type of leaves (big leaf, small leaf, compound leaf, needle leaf). We measured the removed amount of PM10 and PM2.5, the structure of the abaxial leaf surface, and the weight of the wax layer of each plant. Plants with the high removal efficiency of PM included Pachira aquatica Aubl., Ardisia crenata, and Dieffenbachia 'Marianne', and plants with the low removal efficiency included Nandina domestica Thunb, Schefflera arboricola, and Quercus dentata. The abaxial leaf surface having a high removal efficiency of PM had many large wrinkles, and the abaxial leaf surface having a medium removal efficiency was flat and smooth. On the other hand, there were many fine hairs on the abaxial leaf surface with a low removal efficiency. According to the plant leaf type, the PM10 removal efficiency of plants with needle leaves was about three times higher than that of other plants. In particular, the wax layer of conifers weighed 6-24 times higher than those of other plants. The stomata of conifers were evenly distributed on the adaxial and abaxial leaf surfaces; however, the stomata of Sciadopitys verticillata appeared in the form of papillae unlike general stomata. Therefore, the removal efficiency of PM varied depending on the macro-, and micro-morphological characteristics of plant leaves such as the structure of the abaxial leaf surface, and the weight of the wax layer. Based on this research, selecting plants that are effective in reducing PM in consideration of the plant type and leaf characteristics will improve indoor air quality and decrease exposure of PM to human body.

Synthesis and Properties of Diarylamino-Substituted Linear and Dendritic Oligoquinolines for Organic Light-Emitting Diodes

  • Lee, Ho-Joon;Xin, Hao;Park, Seong-Min;Park, Seog-Il;Ahn, Taek;Park, Dong-Kyu;Jenekhe, Samson A.;Kwon, Tae-Woo
    • Bulletin of the Korean Chemical Society
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    • v.33 no.5
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    • pp.1627-1637
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    • 2012
  • The coupling reaction between 5-bromo-3-phenylbenzo[c]isoxazole and diphenylamine followed by further condensation with a mono-, di- or ter-acetyl aromatic compound in the presence of diphenyl phosphate at $145^{\circ}C$ gave a novel asymmetric diarylquinolines, oligoquinolines with diphenylamine endgroups, and a first generation quinoline dendrimer in 41-82% isolated yield. The electrochemical and photophysical properties of the oligoquinolines were characterized by cyclic voltammograms (CVs) and spectroscopy. All the quinolines emit bright sky blue light due to charge transfer from quinoline group to diphenly amine with very high quantum efficiency (> 90%). Organic light-emitting diodes (OLEDs) were fabricated using these quinolines as emitting materials. Among different device architectures explored, OLEDs with a structure of ITO/PEDOT (40 nm)/TAPC (15 nm)/D-A quinoline (40 nm)/TPBI (30 nm)/LiF (1 nm)/Al using TAPC as an electron blocking layer and TPBI as a hole blocking layer gave the best performance. A high external quantum efficiency in the range of 1.2-2.3% were achieved in all the quinolines with the best performance in BBQA(5). Our results indicate diarylamino-substituted oligoquinoline and dendrimer are promising materials for OLEDs applications.

A study on the flaking phenomenon by the reaction between glass and solution (유리와 수용액의 반응에 의한 Flaking 현상 연구)

  • 김명석;장원식;심영재;이기강;김정환
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.1
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    • pp.179-186
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    • 1998
  • We have been investigated the effects of the initial pH of the aquous solution, reaction temperature and time for the flaking of the soda-lime glass container. Flaking of glass occuurred in the cases of the $121^{\circ}C$, above pH 11 of solution with no $Mg^{2+}$ ions in solution. The pH of the solution approached to pH 10 under the conditions of below pH 9 of start solution. The flaking mechanism of the glass seem to be composed of formation of leached layer of $Ca^{2+}$ and $Na^{2+}$ ion and separation of these layers during the cooling by the difference of thermal expansion between leached layer and glass surface. The leaching of alkali ions in glass depends on the pH condition of the start solution and the temperature. In the case of $Mg^{2+}$ ions are added, $Mg^{2+}$ ions accelerate the flaking of the sodalime glasses and forms the magnesium silicate compound which result in the decrease of the pH of the solution.

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Thermal behavior of modified silicon surface by $CHF_3/C_2F_6$ reactive ion etching ($CHF_3/C_2F_6$ 반응성이온 건식식각에 의해 변형된 실리콘 표면의 열적 거동에 관한 연구)

  • Park, Hyung-Ho;Kwon, Kwang-Ho;Koak, Byong-Hwa;Lee, Joong-Whan;Lee, Soo-Min;Kwon, Oh-Joon;Kim, Bo-Woo;Seong, Yeong-Gwon
    • Korean Journal of Materials Research
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    • v.2 no.1
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    • pp.35-42
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    • 1992
  • Thermal behavior of residue and damaged layer formed by reactive ion etching (RIE) in $CHF_3/C_2F_6$ were investigated using X-ray photoelectron spectroscopy(XPS) and secondary ion mass spec-trometry(SIMS) techniques. Decomposition of polymer residue film begins at $200^{\circ}C$ and above $400^{\circ}C$ carbon compound as graphite mainly forms by in-situ resistive heating. It reveals that thermal decomposition of residue can be completed by rapid thermal anneal treatment above $800^{\circ}C$ under nitrogen atmosphere and out-diffusion of carbon and fluorine of damaged layer is observed.

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Studies on the Yellow Pigment Produced by Monascus SP. CS-2 Part II Isolation and Preparation of Yellow Pigment. (Monascus SP.가 생산하는 황색색소에 관한 연구 제2보 황색 색소의 분리 및 정제)

  • Kim, Hyun-Soo;Jang, Wook;Lee, Hee-In;Bae, Jong-Chan;Yoo, Ju-Hyun
    • Microbiology and Biotechnology Letters
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    • v.8 no.3
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    • pp.167-172
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    • 1980
  • Yellow pigments were extracted with mixture of 60% -ethanol and petroleum ether (1 : 2) by method of partition chromatography in petroleum ether phase. The absorption curve of yellow pigments solution exhibits maximum peak at wave length range of 394-403um. By thin layer chromatography yellow pigments preparation were found to consists of monascin(yellow), monascidin A (pale yellow) and one unknown (orange-yellow) compound. Isolated fat soluble yellow pigments were changed to water soluble by N-KOH (adjust pH 9). The resulted product obtained were yellow pigments of K-salt complex.

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Nickel Silicide Nanowire Growth and Applications

  • Kim, Joondong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.215-216
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    • 2013
  • The silicide is a compound of Si with an electropositive component. Silicides are commonly used in silicon-based microelectronics to reduce resistivity of gate and local interconnect metallization. The popular silicide candidates, CoSi2 and TiSi2, have some limitations. TiSi2 showed line width dependent sheet resistance and has difficulty in transformation of the C49 phase to the low resistive C54. CoSi2 consumes more Si than TiSi2. Nickel silicide is a promising material to substitute for those silicide materials providing several advantages; low resistivity, lower Si consumption and lower formation temperature. Nickel silicide (NiSi) nanowire (NW) has features of a geometrically tiny size in terms of diameter and significantly long directional length, with an excellent electrical conductivity. According to these advantages, NiSi NWs have been applied to various nanoscale applications, such as interconnects [1,2], field emitters [3], and functional microscopy tips [4]. Beside its tiny geometric feature, NW can provide a large surface area at a fixed volume. This makes the material viable for photovoltaic architecture, allowing it to be used to enhance the light-active region [5]. Additionally, a recent report has suggested that an effective antireflection coating-layer can be made with by NiSi NW arrays [6]. A unique growth mechanism of nickel silicide (NiSi) nanowires (NWs) was thermodynamically investigated. The reaction between Ni and Si primarily determines NiSi phases according to the deposition condition. Optimum growth conditions were found at $375^{\circ}C$ leading long and high-density NiSi NWs. The ignition of NiSi NWs is determined by the grain size due to the nucleation limited silicide reaction. A successive Ni diffusion through a silicide layer was traced from a NW grown sample. Otherwise Ni-rich or Si-rich phase induces a film type growth. This work demonstrates specific existence of NiSi NW growth [7].

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