• 한국식품영양과학회지
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• 제38권9호
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• pp.1202-1209
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• 2009

울금 분말을 methanol로 추출하여 여러 용매로 분획하여 식품부패미생물의 증식억제 효과를 검색하고 그 항균성 물질을 분리하였다. 울금의 ethyl acetate 분획 추출물은 낮은 농도인 1,000 ${\mu}g$/disc의 농도에서 B. subtilis, S. aureus, L. monocytogenes, E. coli, V. parahaemolyticus에 대하여 8.5 $\sim$13 mm의 clear zone을 형성하여 우수한 항균성을 나타내었다. 울금의 ethyl acetate 추출물을 silica gel column chromatography와 TLC로 monitoring 하여 항균성을 실험하였다. 이 결과 우수한 항균성을 보인 sub fraction을 재차 분리하여 yellow oil의 항균성물질을 얻었고 이를 GC/MS, $^1H$-NMR로 구조 분석한 결과 화학식이 $C_8H_8O$이며 분자량이 120.154의 2,3-dihydrobenzofuran(coumaran)으로 동정 되었다.

• Journal of Welding and Joining
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• 제20권6호
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• pp.830-837
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• 2002

This study investigated variations of micro-structures and mechanical properties of Ti / STS321L joint with various bonding temperature and time using brazing method. According to increasing bonding temperature and time, it was observed that the thickness of their reaction layer increased due So increasing diffusion rate and time. From the EPMA results, Ti diffused to the STS321L substrate according to increasing bending time to 30min. Hardness of bonded interface increased with increasing bonding temperature and time due to increasing their oxides and intermetallic compounds. XRD data indicated that Ag, Ag-Ti intermetallic compounds, TiAg and $Ti_3Ag$ and titanium oxide, $TiO_2$ were formed in interface. In tensile test, it was found that the tensile strength had a maximum value at the bonding temperature of $900^{\circ}C$ and time of 5min, and tensile strength decreased over bonding time of 5min. The critical thickness of intermetallic compounds was observed to about $30\mu\textrm{m}$, because of brittleness from their excessive intermetallic compounds and titanium oxide, and weakness from void.

• 전자공학회논문지A
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• 제30A권1호
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• pp.31-43
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• 1993

Thermal behavior and $O_{2}$ plasma effects on residue and penetrated impurities formed by reactive ion etching (RIE) in CHF$_{3}$/C$_{2}$F$_{6}$ have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) techniques. Decomposition of polymer residue film begins between 200-300.deg. C, and above 400.deg. C carbon compound as graphite mainly forms by in-situ resistive heating. It reveals that thermal decomposition of residue can be completed by rapid thermal anneal above 800.deg. C under nitrogen atmosphere and out-diffusion of penetrated impurities is observed. The residue layer has been removed with $O_{2}$ plasma exposure of etched silicon and its chemical bonding states have been changed into F-O, C-O etc.. And $O_{2}$ plasma exposure results in the decrease of penetrated impurities.

• 열처리공학회지
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• 제2권2호
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• pp.17-26
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• 1989

This study has been performed to investigate into some effects of the Sursulf treatment time and the traveling speed of surface hardening treatment on the hardness and the wear characteristics by applying the combined heat treating techniques of Sursulf process followed by induction hardening treatment to mild steel. It has been shown that increasing the Sursulf treatment time increases the case depth, but both hardness and wear resistance are not considerably improved. When the combined heat treating technique of high frequency induction heating after Sursulf treatment is applied, an improvement in case depth as well as wear resistance is obtained. In particular, the hardness in diffusion zone is greatly increased due mainly to the formation of martensite and possibly lower bainite. Iron oxides formed during induction heating and subsequent water spray cooling in the outermost part of compound layer may be considered to cause some increases in hardness and wear resistance.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 1999년도 춘계학술대회 및 발표대회 강연 및 발표논문 초록집
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• pp.5-5
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• 1999

The Principal deficiency of the existing notion about the sintering-mixtures consists in the fact that almost no attention is focused on the Phenomenon of alloy formation during sintering, its connection with dimensional changes of powder bodies, and no correct ideas on the driving force for the sintering process in the stage of establishing chemical equilibrium in a system are available as well. Another disadvantage of the classical sintering theory is an erroneous conception on the dissolution mechanism of solid in liquid. The two-particle model widely used in the literature to describe the sintering phenomenon in solid state disregards the nature of the neighbouring surrounding particles, the presence of pores between them, and the rise of so called arch effect. In this presentation, new basic scientific principles of the driving forces for the sintering process of a two-component powder body, of a diffusion mechanism of the interaction between solid and liquid phases, of stresses and deformation arising in the diffusion zone have been developed. The major driving force for sintering the mixture from components capable of forming solid solutions and intermetallic compounds is attributed to the alloy formation rather than the reduction of the free surface area until the chemical equilibrium is achieved in a system. The lecture considers a multiparticle model of the mixed powder-body and the nature of its volume changes during solid-state and liquid-phase sintering. It explains the discovered S-and V-type concentration dependencies of the change in the compact volume during solid-state sintering. It is supposed in the literature that the dissolution of solid in liquid is realised due to the removal of atoms from the surface of the solid phase into the melt and then their diffusicn transfer from the solid-liquid interface into the bulk of liquid. It has been shown in our experimental studies that the mechanism of the interaction between two components, one of them being liquid, consist in diffusion of the solvent atoms from the liquid into the solid phase until the concentration of solid solutions or an intermetallic compound in the surface layer enables them to pass into the liquid by means of melting. The lecture discusses peculimities of liquid phase formation in systems with intermediate compounds and the role of the liquid phase in bringing about the exothermic effect. At the frist stage of liquid phase sintering the diffusion of atoms from the melt into the solid causes the powder body to grow. At the second stage the diminution of particles in size as a result of their dissolution in the liquid draws their centres closer to each other and makes the compact to shrink Analytical equations were derived to describe quantitatively the porosity and volume changes of compacts as a result of alloy formation during liquid phase sinteIing. Selection criteria for an additive, its concentration and the temperature regime of sintering to control the density the structure of sintered alloys are given.

• 마이크로전자및패키징학회지
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• 제20권2호
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• pp.59-64
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• 2013

3차원 적층 패키지를 위한 Cu/Ni/Au/Sn-Ag/Cu 미세 범프의 열처리에 따른 금속간 화합물 성장 거동을 분석하기 위하여 in-situ SEM에서 $135^{\circ}C$, $150^{\circ}C$, $170^{\circ}C$의 온도에서 실시간 열처리 실험을 진행하였다. 실험 결과 금속간 화합물의 성장 거동은 열처리시간이 경과함에 따라 시간의 제곱근에 직선 형태로 증가하였고, 확산에 의한 성장이 지배적인 것을 확인 할 수 있었다. Ni/Au 층의 존재로 인해 Au의 확산으로 복잡한 구조의 금속간 화합물이 생성 된 것을 확인할 수 있다. 활성화 에너지는 $Cu_3Sn$의 경우 0.69eV, $(Cu,Ni,Au)_6Sn_5$경우 0.84 eV로 Ni이 포함된 금속간 화합물이 더 높은 것을 확인 하였으며, 확산 방지층 역할을 하는 Ni층에 의해 금속간 화합물 성장이 억제됨에 따라 신뢰성이 향상 될 것으로 사료된다.

• 열처리공학회지
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• 제23권3호
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• pp.150-155
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• 2010

Generally, plasma nitriding process has composed with a nitriding layer within glow discharge region occurred by energy exchange. The dissociations of nitrogen molecules are very difficult to make neutral atoms or ionic nitrogen species via glow discharge area. However, the captured electrons in which a double-folded screen with same potential cathode can stimulate and come out some single atoms or activated ionic species. It was showed an important thing that is called "hat is a dominant component in this nitriding process?" in plasma nitriding process and it can take an effective species for without compound layer. During a plasma nitriding process, it was able to estimate with analyzing and identification by optical emission spectroscopy (OES) study. And then we can make comparative studies on the nitrogen transfer with plasma nitriding and ATONA process using plasma diagnosis and metallurgical observation. From these observations, we can understand role of active species of nitrogen, like N, $N^+$, ${N_2}^+$, ${N_2}^*$ and $NH_x$-radical, in bulk plasma of each process. And the same time, during DC plasma nitriding and other processes, the species of FeN atom or any ionic nitride species were not detected by OES analyzing.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.215-216
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• 2013

The silicide is a compound of Si with an electropositive component. Silicides are commonly used in silicon-based microelectronics to reduce resistivity of gate and local interconnect metallization. The popular silicide candidates, CoSi2 and TiSi2, have some limitations. TiSi2 showed line width dependent sheet resistance and has difficulty in transformation of the C49 phase to the low resistive C54. CoSi2 consumes more Si than TiSi2. Nickel silicide is a promising material to substitute for those silicide materials providing several advantages; low resistivity, lower Si consumption and lower formation temperature. Nickel silicide (NiSi) nanowire (NW) has features of a geometrically tiny size in terms of diameter and significantly long directional length, with an excellent electrical conductivity. According to these advantages, NiSi NWs have been applied to various nanoscale applications, such as interconnects [1,2], field emitters [3], and functional microscopy tips [4]. Beside its tiny geometric feature, NW can provide a large surface area at a fixed volume. This makes the material viable for photovoltaic architecture, allowing it to be used to enhance the light-active region [5]. Additionally, a recent report has suggested that an effective antireflection coating-layer can be made with by NiSi NW arrays [6]. A unique growth mechanism of nickel silicide (NiSi) nanowires (NWs) was thermodynamically investigated. The reaction between Ni and Si primarily determines NiSi phases according to the deposition condition. Optimum growth conditions were found at $375^{\circ}C$ leading long and high-density NiSi NWs. The ignition of NiSi NWs is determined by the grain size due to the nucleation limited silicide reaction. A successive Ni diffusion through a silicide layer was traced from a NW grown sample. Otherwise Ni-rich or Si-rich phase induces a film type growth. This work demonstrates specific existence of NiSi NW growth [7].

• 한국재료학회지
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• 제2권1호
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• pp.35-42
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• 1992

실릴콘 산화막을 $CHF_3/C_2F_6$ 혼합가스를 사용하여 반응성이온 건식식각을 행할 때 실리콘 표면에 형성되는 잔류막과 손상충의 열적 거동을 X-선 광전자 분광기(XPS)와 이차이온 질량 분석기 (SIMS)를 사용, 연구하였다. 저항가열을 통한 in-situ 분석에 의해 폴리머 잔류막은 $200^{\circ}C$부터 분해가 시작되고 $400^{\circ}C$ 이상의 가열에서는 graphite 형태의 탄소 결합체를 형성하며 분해됨을 알았다. 질소 분위기하의 급속 열처리를 통해 잔류막의 열분해는 $800^{\circ}C$ 이상에서 완료되고 손상층을 형성하는 침투 불순원소의 기판 외부로의 확산이 관찰되었다.

• 한국재료학회지
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• 제13권2호
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• pp.126-132
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• 2003

In order to evaluate the corrosion resistance at the anode side separator for molten carbonate fuel cell, STS316 and SACC-STS316 (chromium and aluminum were simultaneously deposited by diffusion into STS316 authentic stainless steel substrate by pack-cementation process) were applied as the separator material. In case of STS316, corrosion proceeded via three steps ; a formation step of corrosion product until stable corrosion product, a protection step against corrosion until breakaway occurs, a advance step of corrosion after breakaway. Especially, STS316 would be impossible to use the separator without suitable surface modification because of rapid corrosion rate after formation of corrosion product, occurs the severe problem on stability of cell during long-time operation. Whereas, SACC-STS316 was showed more effective corrosion resistance than the present separator, STS316 due to the intermetallic compound layer such as NiAl, Ni3Al formed on the surface of STS316 specimen. And it is anticipated that, in order to use SACC-STS316 alternative separator at the anode side, coating process, which can lead to dense coating layer, has to be developed, and by suitable pre-treatment before using it, very effective corrosion resistance will be achieved.