• 제목/요약/키워드: Complex Index of Refraction

검색결과 9건 처리시간 0.026초

Impact of a New Formula on the Fresnel Reflectance on Microwave Remote Sensing

  • Qing, Xu;Yuguang, Liu
    • 대한원격탐사학회:학술대회논문집
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    • 대한원격탐사학회 2003년도 Proceedings of ACRS 2003 ISRS
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    • pp.1340-1342
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    • 2003
  • In microwave remote sensing, the Fresnel reflectance formula is widely used in the sea surface emissivity modeling. As an essential contribution to microwave remote sensing, a new formula on the Fresnel reflectance has been derived based on our understanding of the complex index of refraction and continuity condition of E-M waves at the interface between two mediums. The proposed formula can be used to obtain the emissivity of sea surface, which is useful to retrieve sea surface temperature, sea surface salinity and the brightness temperature. Considering Bragg-resonant scatter, it is useful for the calculation of the normalized radar cross-section, and the retrieval of sea surface wind either.

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Study of Dynamics of Allyl Chloride-2-Butanone Binary System Using Time Domain Reflectometry

  • Sudake, Y.S.;Kamble, S.P.;Patil, S.S.;Khirade, P.W.;Mehrotra, S.C.
    • 대한화학회지
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    • 제56권1호
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    • pp.20-27
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    • 2012
  • Complex permittivity spectra of Allyl Chloride (AC), 2-Butanone (2-BU) and their binary mixtures over the entire range of concentration were obtained using the Time Domain Reflectometry (TDR) technique in microwave frequency range at various temperatures. Static dielectric constant and relaxation time are obtained from complex permittivity spectra. Density ($\rho$) and refractive index ($n_D$) are also measured. These parameters are used to determine excess dielectric constant, excess inverse relaxation time, excess molar volume, excess molar refraction, polarity, Bruggeman factor and thermodynamic parameters viz. enthalpy of activation and entropy of activation. The values of static dielectric constant and relaxation time increases while density and refractive index decreases with the percentage of 2-Butanone in Allyl Chloride increases. Excess parameters were fitted to a Redlich-Kister equation.

Ellipsometry를 이용한 저 유전상수를 갖는 SiOCH박막의 광학특성 연구 (A Study of Optical Characteristics Correlated with Low Dielectric Constant of SiOCH Thin Films Through Ellipsometry)

  • 박용헌
    • 한국전기전자재료학회논문지
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    • 제23권3호
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    • pp.228-233
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    • 2010
  • We studied the optical characteristics correlated with low dielectric constants of low-k SiOCH thin films through ellipsometry. The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The Si-O-CHx, Si-O-Si, Si-CHx, CHx and Si-H bonding groups were specified by FTIR spectroscopic spectra, and the groups coupled with the nano-porous structural organic/inorganic hybrid-type of SiOCH thin films which has extremely low dielectric constant close to 2.0. The structural groups includes highly dense pore as well as ions in SiOCH thin films affecting to complex refraction characteristics of single layer on the p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-light source in the range from 190 nm to 2100 nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

Characterization of Doped Silicon from 0.1 to 2.5 THz Using Multiple Reflection

  • Jeon, Tae-In
    • Journal of the Optical Society of Korea
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    • 제3권1호
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    • pp.10-14
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    • 1999
  • Via THz Time domain spectroscopy, the characterization of high conductive n-type, 1.31Ω cm silicon can be measured by directly analyzing the multiple reflections using Fabry-Perot theory. The magnitude and phase difference of total transmission show good agreement between theoretical and experimental values over a 2.5 THz frequency range with complex index of refraction and power absorption. The measured absorption and dispersion are strongly frequency-dependent, and all of the results are well fit by a Cole-Davidson type distribution.

Aero-optical transmitting effect in the compressible mixing layer

  • Ma, Handong;Gan, Caijun;Li, Lang
    • International Journal of Aerospace System Engineering
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    • 제2권2호
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    • pp.79-82
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    • 2015
  • The handicap for investigating the aero-optical effect focuses on the accurate prediction on the index refraction fluctuation or density fluctuation. In recent years, with the development of CFD techniques and optical experimental techniques, the comprehension have developed on the aero-optical transmitting effect in many kinds of complex flow. This study mainly introduces the optical aberration in compressible mixing layer. And then the debates about the mechanism of aero-optical effects and assessment of image blur also present.

Study of the Correlation of Plasma Resonance and the Refractive Index to Dielectric Dispersion in the Complex Plane

  • Zhou, Xiao-Yong;Shen, Yan;Hu, Er-Tao;Chen, Jian-Bo;Zhao, Yuan;Sheng, Ming-Yu;Li, Jing;Zheng, Yu-Xiang;Zhao, Hai-Bin;Chen, Liang-Yao;Li, Wei;Jiang, Xun-Ya;Lee, Young-Pak;Lynch, David W.
    • Journal of the Optical Society of Korea
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    • 제17권1호
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    • pp.27-32
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    • 2013
  • Based on the dispersive feature of the dielectric function of noble metals and the wave vector conservation in physics, both the plasma effect and the complex refractive index, which are profoundly correlated to the complex dielectric function and permeability, have been studied and analyzed. The condition to induce a bulk or a surface plasma in the visible region will not be satisfied, and there will be one solution for the real and the imaginary parts of the refractive index, restricting it only to region I of the complex plane. The results given in this work will aid in understanding the properties of light transmission at the metal/dielectric interface as characterized by the law of refraction in nature.

Ellipsometry를 이용한 Low-k SiOCH 박막의 유전특성에 관한 연구 (A Study of the Dielectric Characteristics of the Low-k SiOCH Thin Films by Ellipsometry)

  • 이인환;황창수;김홍배
    • 한국전기전자재료학회논문지
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    • 제21권12호
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    • pp.1083-1089
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    • 2008
  • We studied the dielectric characteristics of low-k SiOCH thin films by Ellipsometry. The SiOCH thin films were prepared by deposition of BTMSM precursors on p-Si wafer by CCP-PECVD method. The nano-porous structural organic/inorganic hybrid-type of SiOCH thin films correlated directly to the formation of low dielectrics close to pore(k=1). The structural groups including highly dense pores in SiOCH thin films originated the anisotropic geometry type of network structure directing to complex refractive characteristics of SiOCH single layer on the p-Si wafer. The linearly polarized beam of Xe-ramp in the range from 190 nm to 2100 nm introduced to the surface of SiOCH thin film, and the reflected beam was Elliptically polarized by complex refractive coefficients of SiOCH dipole groups. The amplitude variation $\Psi$ and phase variation $\Delta$ of the relative reflective coefficients between perpendicular and parallel components to the incident plane were measured by Ellipsometry. The complex optical constants n and k as well as the dielectric constant and thickness of SiOCH thin films were driven by the measured value of $\Psi$ and $\Delta$.

Ellipsometry를 이용한 저 유전 상수를 갖는 SiOCH박막의 광학특성 연구 (A study of optical characteristics correlated with low dielectric constant of SiOCH thin films through Ellipsometry)

  • 박용헌;황창수;김홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.198-198
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    • 2010
  • The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-ramp in the range from 190nm to 2100nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

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Mie Theory를 이용한 알루미나 입자의 흡수 및 산란 특성 분석 (Analysis of absorption and scattering characteristics of alumina particles using Mie theory)

  • 고주용;김인선
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2011년도 제37회 추계학술대회논문집
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    • pp.962-967
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    • 2011
  • 발사체의 추력을 증진시키기 위해서 사용되는 고체 부스터나 궤도 투입을 위한 킥 모터 플룸의 주요 성분인 알루미나 입자의 복사물성을 도출하기 위해서 입자의 복사특성을 분석하였다. 특히 입자의 흡수나 산란현상이 파장의 함수이므로, 이를 전 파장에 대한 총방사율로 표현할 수 있도록 수식을 정리하였고, 입자의 크기 및 Complex Index of Refraction을 Mie 이론에 도입하여 최종적으로 총 방사율을 도출하였다. 결과적으로 방사율은 온도에 따라 증가하는 것을 확인할 수 있었다.

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