• Journal of Welding and Joining
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• v.20 no.2
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• pp.77-81
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• 2002

Many kinds of Pb-free solder have been investigated because of the environmental concerns. Sn-Ag-Cu system is well blown as most competitive Pb-free solder. However, since Sn-Ag-Cu system has relatively high melting point compared to Sn-Pb eutectic, it may a limitation, the some application. In this study, Bi and In contained solder of $Sn_3Ag_8Bi_5In$ which has relatively lower melting point, $188~204^{\circ}C$, was investigated. $Sn_3Ag_8Bi_5In$ solder ball of $500\mu\textrm{m}$ diameter was set on the Ni/Cu/Cr-UBM and reflow soldered in the range of $220~240^{\circ}C$ for 5~15s. The maximum shear strength of the solder ball was around 170mN by reflowing at $240^{\circ}C$ for 10s. Intermetallic compound formed on the UBM of Si-wafer was analysed by SEM(scanning electron microscope) and XRD(X-ray diffractometer).

• Journal of the Microelectronics and Packaging Society
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• v.9 no.1
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• pp.21-28
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• 2002

Bismuth and Indium added Sn-Cu-Ni solder alloy was investigated for a new lead free solder. The thermal, electrical and mechanical properties were characterized for the Sn-0.7%(Cu+Ni) solder alloy by adding 2~5% Bi and 2~ 10% In. The melting point of solder alloy was in range of 200 to $222^{\circ}C$ and the mushy zone was in range of 20 to $37^{\circ}C$. This alloys could be adapted to middle and high temperature solder materials. A new solder alloy composition. Sn-0.7%(Cu+Ni) -3.5%Bi-2%In is very promising with high performance and effective cost. The melting point was $220^{\circ}C$, the mushy zone range was $25^{\circ}C$, and mechanical, electrical and wetting properties were competitive with those of other lead-free solder except the lower elongation value.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.124-124
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• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Bulletin of the Korean Chemical Society
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• v.22 no.1
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• pp.25-29
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• 2001

Nucleophilic substitution reactions of O-imidomethyl derivatives of phenols with OH- were studied theoretically using the semiempirical AM1 and Solvation Model 2.1 (SM2.1) methods in the gas phase and aqueous solution, respectively. In the gas phase, the two reaction paths, in which the imide (1a) or phenol (1b) is functioning as a leaving group, can occur competitively. In contrast, in aqueous solution, path (1b) becomes more favorable than (1a) because the transition states (TS) of path (1b) are more stabilized by solvent. Differences in solvation energies are caused by the structural differences of TS, i.e., the TS via path (1b) is more dissociative than that via path (1a). Therefore we conclude that the solvent effects play an important role in the hydrolysis of O-imidomethyl derivatives of phenols. However, reactivity is dependent on the acidities of both the imide and the phenol fragments since the ρz values vary progressively from 4.2 (Z' = I) to 2.5 (Z' = IV) as the acidities of imide increase. These are in good agreement with the experimental results.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.285-285
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• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Journal of the Korea Society for Simulation
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• v.29 no.4
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• pp.9-19
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• 2020

The number of customers on Social Network Services(SNS) is rapidly increasing with the spread of smartphones. As of 2018, about 2.7 billion people of the world population (about 7.1 billion people) and more than 31.2 million people of the total population of South Korea (about 50.1 million) use SNS. There are several studies have been conducted on increasing SNS market. Most of them, however, were not quantitative but qualitative studies. This study is conducted on domestic SNS market to identify the competitive relationship among SNS platforms with great proportion in South Korea, such as Facebook, Instagram and Twitter. The objective is to suggest some hypotheses of the competitive relations, test them, and finally verify the trend of domestic SNS market. Competitive Lotka-Volterra (LV) model is used to find out the competitive relationships and Moving Window is also used to show the changes of them over time. In order to test the hypotheses on the relationships, some experiments are performed with Moving Window technique. Thus, the relations among the platforms and the changes of them over time are identified.

• Journal of Environmental Science International
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• v.29 no.10
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• pp.943-949
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• 2020

In this work, we prepared a heterojunction anode with a surface layer of SnO₂-Sb-Ni (SSN) on a Ti/IrO₂ electrode by thermal decomposition to improve the electrochemical activity of the Ti/IrO₂ electrode. The Ti/IrO₂-SSN electrode showed significantly improved electrochemical activity compared with Ti/IrO₂. For the 0.1 M NaCl and 0.1 M Na₂SO₄ electrolytes, the onset potential of the Ti/IrO₂-SSN electrode shifted in the positive direction by 0.1 V_SCE and 0.4 V_SCE, respectively. In 2.0-2.5 V voltages, the concentration in Ti/IrO₂-SSN was 2.59-214.6 mg/L Cl₂, and Ti/IrO₂ was 0.55-49.21 mg/L Cl₂. Moreover, the generation of the reactive chlorine species and degradation of Eosin-Y increased by 3.79-7.60 times and 1.06-2.15 times compared with that of Ti/IrO₂. Among these voltages, the generation of the reactive chlorine species and degradation of Eosin-Y were the most improved at 2.25 V. Accordingly, in the Ti/IrO₂-SSN electrode, it can be assumed that the competitive reaction between chlorine ion oxidation and water oxidation is minimized at an applied voltage of 2.25V.

• Proceedings of the PSK Conference
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• 2003.04a
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• pp.239.2-240
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• 2003

We have recently described the novel synthetic method for N-protected amines from various ethers using chlorosulfonyl isocyanate(CSI) and found that the mechanism of our CSI reaction is a competitive reaction of SN1 and SNi mechanism according to the stability of carbocation intermediate. Forthermore. we developed the regioselective and diastereoselective one-pot synthetic method for 1,2-amino alcohol, through the reaction of di-and tribenzyl thers with CSI, and invetigated its mechanism. (omitted)

• Journal of the Korean Data and Information Science Society
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• v.21 no.2
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• pp.211-218
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• 2010

Taguchi has used the signal-to-noise ratio (SN) to achieve the appropriate set of operating conditions where variability around target is low in the Taguchi parameter design. Many Statisticians criticize the Taguchi techniques of analysis, particularly those based on the SN. Moreover, there are difficulties in practical application, such as complexity and nonlinear relationships among quality characteristics and design (control) factors, and interactions occurred among control factors. Neural networks have a learning capability and model free characteristics. There characteristics support neural networks as a competitive tool in processing multivariable input-output implementation. In this paper we propose a substantially simpler optimization procedure for parameter design using neural network without resorting to SN. An example is illustrated to compare the difference between the Taguchi method and neural network method.

• The Korean Journal of Mycology
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• v.24 no.1 s.76
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• pp.8-16
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• 1996

The ${\alpha}-amylase$ of Alternaria alternata was purified through ammonium sulfate precipitation, dialysis and Sephadex G-100 column chromatography. One single band was obtained in SDS-polyacrylamide gel electrophoresis. The optimum pH for enzyme activity was 5.0 and the enzyme activity was maintained at $3.6{\sim}7.0$pH range. The optimum temperature for ${\alpha}-amylase$ activity was $40^{\circ}C$ and 71% of the activity was still maintained until 30 min after heating at $80^{\circ}C$. The ${\alpha}-amylase$ was slightly activated by $Mn^{2+},\;Zn^{2+}\;and\;Sn^{2+}$, but inhibited by $Ba^{2+},\;Pb^{2+},\;Co^{2+}\;and\;Ag^{1+}$. The $Hg^{2+}\;and\;Ag^{2+}$ slightly inhibited the activity of the enzyme at concentrations of $10^{-3}\;and\;10^{-4}M$. The Michaelis constant $(K_m)$ to soluble starch was $6.50{\times}10^{-2}M$ and inhibition constant $(K_i)$ by the 1mM EDTA was $8.0{\times}10^{-2}M$. The inhibition of this enzyme by EDTA was competitive one.