• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.55-58
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• 2000

This paper describes a single transistor type ferroelectric field effect transistor (1T FeFET) memory celt scheme which can select one unit memory cell and program/read it. To solve the selection problem of 1T FeEET memory cell array, the row direction common well is electrically isolated from different adjacent row direction column. So, we can control voltage of common well line. By applying bias voltage to Gate and Well, respectively, we can implant IT FeEET memory cell scheme which no interface problem and can bit operation. The results of HSPICE simulations showed the successful operations of the proposed cell scheme.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.23 no.6
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• pp.1433-1442
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• 1998

The thesis presents a dual audio decoder which can decode both AC-3 and MPEG-2 bitstream. The MPEG-2 synthesis processi s optimized via FFT to establish the common data path with AC-'3s. A dual audio decoder consists of a DSP core which performs the control-intensive part of each algorithm and a common synthesis filter which perfomrs the computation-intensive part. All the components of the dual audio decoder have been described in VHDL and simulated with a SYNOPSYS tool. The software modeling of the DSP core was used for functional validation. After being synthesized using 0.6 .mu.m-3ML technology standard cell, the dual audio decoder was simulated at gate-level with a COMPASS tool for hardware validation.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.6A
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• pp.697-704
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• 2004

This paper describes the design and fabrication of an MMIC variable gain LNA for 5GHz wireless LAN applications, using 0.5${\mu}{\textrm}{m}$ gate length GaAs MESFET transistors. The advantages of high gain and low noise performance of E-MESFETS and excellent linear performance of D-MESFETS are combined as a cascode topology in this design. Behavioral model equations are derived from the MESFET nonlinear current voltage characteristics by using Turlington's asymptote method in a cascode configuration. Using the behavioral model equations, a 4${\times}$50${\mu}{\textrm}{m}$ E-MESFET as a common source amplifier and a 2${\times}$50${\mu}{\textrm}{m}$ D-MESFET as a common gate amplifier are determined for the cascode amplifier. The fabricated variable gain LNA shows a noise figure of 2.4dB, variable gain range of more than 17dB, IIP3 of -4.8dBm at 4.9GHz, and power consumption of 12.8mW.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.12
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• pp.1033-1044
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• 2002

In this Paper, a new FRAM design technique utilizing grounded-plate PMOS-gate (GPPG) ferroelectric cell is proposed. A GPPG cell consists of a PMOS access transistor and a ferroelectric data storage capacitor. Its plate is grounded. The proposed architecture employs three novel methods for cell operation: 1) $V_{DD}$ -precharged bitline, 2) negative-voltage wordline technique and 3) negative-pulse restore. Because this configuration doesn't need the plate control circuitry, it can greatly increase the memory cell efficiency. In addition, differently from other reported common-plate cells, this scheme can supply a sufficient voltage of $V_{DD}$ to the ferroelectric capacitor during detecting and storing the polarization on the cell. Thus, there is no restriction on low voltage operation. Furthermore, by employing a compact column-path circuitry which activates only needed 8-bit data, this architecture can minimize the current consumption of the memory array. A 4- Mb FRAM circuit has been designed with 0.3-um, triple-well/1-polycide/2-metal technology, and the possibility of the realization of GPPG cell architecture has been confirmed.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.38 no.2
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• pp.38-49
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• 2001

This paper presents a new voltage down converter(VDC) using charge and discharge current adjustment circuitry that provides high frequency application. This VDC consist of a common driving circuit and compensation circuits: 2 sensors and each driving transistors for controlling gate current of driving transistor. These sensors are operated as adaptive biasing method with high speed and low power consumption. This circuit is designed with a $0.62{\mu}m$ N well CMOS technology. In H-spice simulation results, internal voltage is bounded ( IV, +0.6V) in proposed circuitry when load current rapidly increases and decreases during Gns between 0 and $200m{\Lambda}$. And the recovery time of internal voltage is about 7ns and 10ns when load current increases and decreases respectively. That is fast better than common driving circuit. Total power consumption is about 1.2mW.

• The Korean Journal of Pain
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• v.9 no.1
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• pp.140-144
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• 1996

Electrical stimulation is a common method for successful pain management for both acute and a some cases of chronic pain. The incidence of cervical sprain is very high with automobile accidents. Treatment of cervical sprain is consists of analgesic drugs and physical therapy. Lower back pain is a common problem in pain clinics. back pain management are complex, so we have difficulty to choose best treatment modality. The prevalence of herniated lumbar disc(HLD) is 1~3% of lower back pain. The cases of laminectomy varies between 10~20% and postoperative pain is prolonged for several day. We applied Acupuncture like TENS (ALTENS) on the digit for cervical sprain patients and post laminectomy pain patient for three days. The result was very satisfactory. And we found that total hospital days in ALTEND groups are shorter than control group in both disease entities. In conclusion, acupuncture like TENS on finger control gate is an effective method of the pain management.

• Journal of Power Electronics
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• v.16 no.3
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• pp.1226-1235
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• 2016

For wearable health monitoring systems, a fundamental problem is the limited space for storing energy, which can be translated into a short operational life. In this paper, a highly efficient active voltage doubling rectifier with a wide input range for micro-piezoelectric energy harvesting systems is proposed. To obtain a higher output voltage, the Dickson charge pump topology is chosen in this design. By replacing the passive diodes with unbalanced-biased comparator-controlled active counterparts, the proposed rectifier minimizes the voltage losses along the conduction path and solves the reverse leakage problem caused by conventional comparator-controlled active diodes. To improve the rectifier input voltage sensitivity and decrease the minimum operational input voltage, two low power common-gate comparators are introduced in the proposed design. To keep the comparator from oscillating, a positive feedback loop formed by the capacitor C is added to it. Based on the SMIC 0.18-μm standard CMOS process, the proposed rectifier is simulated and implemented. The area of the whole chip is 0.91×0.97 mm², while the rectifier core occupies only 13% of this area. The measured results show that the proposed rectifier can operate properly with input amplitudes ranging from 0.2 to 1.0V and with frequencies ranging from 20 to 3000 Hz. The proposed rectifier can achieve a 92.5% power conversion efficiency (PCE) with input amplitudes equal to 0.6 V at 200 Hz. The voltage conversion efficiency (VCE) is around 93% for input amplitudes greater than 0.3 V and load resistances larger than 20kΩ.

• Smart Media Journal
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• v.4 no.2
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• pp.55-61
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• 2015

A bandwidth-enhanced ultra-wide band (UWB) CMOS balun-LNA is implemented as a part of a software defined radio (SDR) receiver which supports multi-band and multi-standard. The proposed balun-LNA is composed of a single-to-differential converter, a differential-to-single voltage summer with inductive shunt peaking, a negative feedback network, and a differential output buffer with composite common-drain (CD) and common-source (CS) amplifiers. By feeding the single-ended output of the voltage summer to the input of the LNA through a feedback network, a wideband balun-LNA exploiting negative feedback is implemented. By adopting a source follower-based inductive shunt peaking, the proposed balun-LNA achieves a wider gain bandwidth. Two LNA design examples are presented to demonstrate the usefulness of the proposed approach. The LNA I adopts the CS amplifier with a common gate common source (CGCS) balun load as the S-to-D converter for high gain and low noise figure (NF) and the LNA II uses the differential amplifier with the ac-grounded second input terminal as the S-to-D converter for high second-order input-referred intercept point (IIP2). The 3 dB gain bandwidth of the proposed balun-LNA (LNA I) is above 5 GHz and the NF is below 4 dB from 100 MHz to 5 GHz. An average power gain of 18 dB and an IIP3 of -8 ~ -2 dBm are obtained. In simulation, IIP2 of the LNA II is at least 5 dB higher than that of the LNA I with same power consumption.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.65-78
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• 2017

Single Event Transient has a critical impact on highly integrated logic circuits which are currently common in various commercial and consumer electronic devices. Reliability against the soft and intermittent faults will become a key metric to evaluate such complex system on chip designs. Our previous work analyzing soft errors was focused on parallelizing and optimizing error propagation procedures for individual transient faults on logic and sequential cells. In this paper, we present a new propagation technique where a fault binary decision diagram (BDD) continues to merge every new fault generated from the subsequent logic gate traversal. BDD-based transient fault analysis has been known to provide the most accurate results that consider both electrical and logical properties for the given design. However, it suffers from a limitation in storing and handling BDDs that can be increased in size and operations by the exponential order. On the other hand, the proposed method requires only a visit to each logic gate traversal and unnecessary BDDs can be removed or reduced. This results in an approximately 20-200 fold speed increase while the existing parallelized procedure is only 3-4 times faster than the baseline algorithm.

• Journal of architectural history
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• v.10 no.2 s.26
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• pp.21-34
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• 2001

The purpose of this study is that it is made clear the construction method of Japanese Castle Architecture in Korea as I study the construction method of Suncheon-Japanese Castle(順天倭城) in those days of Jeong-yu Japanese Invasion. Moreover, I intend to analyze the similarity and the difference between Suncheon-Japanese Castle and Korean Castle Architecture by a comparative study. The result of the study is showed that Suncheon-Japanese Castle seemed to be built with the object of a long time stay rather than it was of strategic importance for the national defense. In addition, it was different from other Japanese Castle in Korea because the watch tower(天守閣) of it stood in the middle of stronghold and the watch tower stronghold dividing the round of it while that of it stood the comer of stronghold. The face stone used in important part of watch tower, gate, and so on was mostly a trimed hexangular stone. On the other hand, the face abbuting on the Gulf of kwang-yang was made of naturally wild face stone. The stone cleared traces of Si-hyeol(矢穴) and domestic Castle in Japan was also made of this method after Im-Jin Japanese Invasion. According to the construction method, the wall of castle made use of the Netak(內托) method except the gate, the support stronghold and the watch. The early mountain castle in Korea have this construction method in common.