• Title/Summary/Keyword: Colloidal Silica

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Mechanical Analysis on Uniformity in Copper Chemical Mechanical Planarization (Cu CMP에서의 연마 균일성에 관한 기계적 해석)

  • Lee, Hyun-Seop;Park, Boum-Young;Jeong, Hae-Do;Kim, Hyoung-Jae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.1
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    • pp.74-79
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    • 2007
  • Most studies on copper Chemical Mechanical Planarization (CMP) have focused on material removal and its mechanisms. Although many studies have been conducted on the mechanism of Cu CMP, a study on uniformity in Cu CMP is still unknown. Since the aim of CMP is global and local planarization, the approach to various factors related to uniformity in Cu CMP is essential to elucidate the Cu CMP mechanism as well. The main purpose of the experiment reported here was to investigate and mechanically analyze the roles of slurry components in the formation of the uniformity in Cu CMP. In this paper, Cu CMP was performed using citric acid($C_{6}H_{8}O_{7}$), hydrogen peroxide($H_{2}O_{2}$), colloidal silica, and benzotriazole($BTA,\;C_{6}H_{4}N_{3}H$) as a complexing agent, an oxidizer, an abrasive, and a corrosion inhibitor, respectively. All the results of this study showed that within-wafer non-uniformity(WIWNU) of Cu CMP could be controlled by the contents of slurry components.

Effect of Alanine on Cu/TaN Selectivity in Cu-CMP (Cu-CMP에서 Alanine이 Cu와 TaN의 선택비에 미치는 영향)

  • Park Jin-Hyung;Kim Min-Seok;Paik Ungyu;Park Jea-Gun
    • Korean Journal of Materials Research
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    • v.15 no.6
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    • pp.426-430
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    • 2005
  • Chemical mechanical polishing (CMP) is an essential process in the production of integrated circuits containing copper interconnects. The effect of alanine in reactive slurries representative of those that might be used in copper CMP was studied with the aim of improving selectivity between copper(Cu) film and tantalum-nitride(TaN) film. We investigated the pH effect of nano-colloidal silica slurry containing alanine through the chemical mechanical polishing test for the 8(inch) blanket wafers as deposited Cu and TaN film, respectively. The copper and tantalum-nitride removal rate decreased with the increase of pH and reaches the neutral at pH 7, then, with the further increase of pH to alkaline, the removal rate rise to increase soddenly. It was found that alkaline slurry has a higher removal rate than acidic and neutral slurries for copper film, but the removal rate of tantalum-nitride does not change much. These tests indicated that alanine may improve the CMP process by controlling the selectivity between Cu and TaN film.

CMP (Chemical Mechanical Polishing) characteristics of langasite single crystals for SAW filter applications

  • Jang, Min-Chul;An, Jin-Ho;Kim, Jong-Cheol;Auh, Keun-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.4
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    • pp.309-317
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    • 2000
  • Langasite is a promising new piezoelectric material for SAW filter application. Little was known until recently about the methods needed to mechanically polish and chemically polish/etch this material. In this experiment, polishing, slurry chemistry and chemical wet etching for langasite is described. Conventional quartz and LN ($LiNbO_3$) polishing methods did not produce satisfactory polished surfaces, and polishing with a colloidal silica slurries has shown to be most effective. The optimum condition was investigated by changing the slurry chemistry. As the planarization effect is very important in SAW filter applications, the examination of the effective particle number effect and the particle size effect was carried out. Z-cut langasite surface which had been polished with the colloidal silica slurries was etched in a variety of etchants. Conventional quartz etchants destroyed the polished surface. Other etchants formed a thin film on the surfaces. In this experiment, the reaction between langasite and a few etching solution was analysed. And an appropriate selective etchant solution for analyzing the defects was synthesized.

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Development of Tungsten CMP (Chemical Mechanical Planarization) Slurry using New Abrasive Particle (새로운 연마입자를 이용한 텅스텐 슬러리 개발)

  • Yu, Young-Sam;Kang, Young-Jae;Kim, In-Kwon;Hong, Yi-Koan;Park, Jin-Goo;Jung, Seok-Jo;Byun, Jung-Hwan;Kim, Moon-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.571-572
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    • 2006
  • Tungsten CMP needs interconnect of semiconductor device ULSI chip and metal plug formation, CMP technology is essential indispensable method for local planarization. This Slurry development also for tungsten CMP is important, slurry of metal wiring material that is used present is depending real condition abroad. It is target that this research makes slurry of efficiency that overmatch slurry that is such than existing because focus and use colloidal silica by abrasive particle to internal production technology development. Compared selectivity of slurry that is developed with competitor slurry using 8" tungsten wafer and 8" oxide wafer in this experiment. And removal rate measures about density change of $H_2O_2$ and Fe particle. Also, corrosion potential and current density measure about Fe ion and Fe particle. As a result, selectivity find 83:1, and expressed similar removal rate and corrosion potential and current density value comparing with competitor slurry.

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Convective Deposition of Silica Nano-Colloidal Particles and Preparation of Anti-Reflective Film by Controlling Refractive Index (콜로이드 실리카 나노입자의 부착에 의한 반사방지막 제조 및 굴절율 조절)

  • Hwang Yeon;Prevo Brian;Velev Orlin
    • Korean Journal of Materials Research
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    • v.15 no.5
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    • pp.285-292
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    • 2005
  • Anti-reflection film was coated by using spherical silica nano colloids. Silica colloid sol was reserved between two inclined slide glasses by capillary force, and particles were convectively stacked to form a film onto the substrate as the water evaporates. As the sliding speed increased, the thickness of the film decreased and the wavelength at the maximum transmittance decreased. The microstructure observed by SEM showed that silica particles were nearly close packed, which enabled the calculation of the effective refractive index of the film. The film thickness was measured by proffer and calculated from the wavelength of maximum transmittance and the effective refractive index. The effective refractive index of the film could be controlled by a subtle controlling of the coating speed and by mixing two different sized silica particles. When the 100 nm and 50 m particles were mixed at 4:1-5:1 volume ratio, the maximum transmittance of $95.2\%$ for one-sided coating was obtained. This is the one that has increased by $3.8\%$ compared to bare glass substrate, and shows that $99.0\%$ of transmittance or $1.0\%$ of reflectance can be achieved by the simple process if both sides of the substrate are coated.

Fabrication and Characteristics of Non-Solvent Silica-Acryl Monomer Hybrid Sol for Optical Device (광학용 무용제 실리카-아크릴 모노머 하이브리드 졸 기반의 코팅액 제조 및 특성 평가)

  • Kang, Woo Kyu;Jang, Gun Eik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.3
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    • pp.246-251
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    • 2019
  • A solvent free, highly concentrated silica-acryl monomer hybrid sol was synthesized using aqueous colloidal silica as a precursor. The effects of the silica particle size, type of surface treatment agent employed, and silica content on the formation of the hybrid sol were systematically studied. The optical and physical properties of the coating solution prepared using the hybrid sol were also characterized. The viscosity of the hybrid sol tended to decrease as the particle size of the silica and the molecular weight of the surface treatment agent increased. The PET substrate coated with MPTMS-Mix (mixture, 70 wt%) solution showed the highest surface hardness (6 H) and low surface roughness ($Ra=0.044{\mu}m$), which could be attributed to an increase in packing density caused by the infiltration of small particles into the pores formed between larger particles.