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http://dx.doi.org/10.4313/JKEM.2007.20.1.074

Mechanical Analysis on Uniformity in Copper Chemical Mechanical Planarization  

Lee, Hyun-Seop (부산대학교 일반대학원 정밀기계공학과)
Park, Boum-Young (부산대학교 일반대학원 정밀기계공학과)
Jeong, Hae-Do (부산대학교 일반대학원 정밀기계공학과)
Kim, Hyoung-Jae (한국생산기술연구원 부산지역본부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.1, 2007 , pp. 74-79 More about this Journal
Abstract
Most studies on copper Chemical Mechanical Planarization (CMP) have focused on material removal and its mechanisms. Although many studies have been conducted on the mechanism of Cu CMP, a study on uniformity in Cu CMP is still unknown. Since the aim of CMP is global and local planarization, the approach to various factors related to uniformity in Cu CMP is essential to elucidate the Cu CMP mechanism as well. The main purpose of the experiment reported here was to investigate and mechanically analyze the roles of slurry components in the formation of the uniformity in Cu CMP. In this paper, Cu CMP was performed using citric acid($C_{6}H_{8}O_{7}$), hydrogen peroxide($H_{2}O_{2}$), colloidal silica, and benzotriazole($BTA,\;C_{6}H_{4}N_{3}H$) as a complexing agent, an oxidizer, an abrasive, and a corrosion inhibitor, respectively. All the results of this study showed that within-wafer non-uniformity(WIWNU) of Cu CMP could be controlled by the contents of slurry components.
Keywords
Copper CMP; Uniformity; Citric acid; Hydrogen peroxide; Colloidal silica; Benzotriazole (BTA);
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