• 대한기계학회:학술대회논문집
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• 대한기계학회 2000년도 춘계학술대회논문집A
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• pp.103-108
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• 2000

Since the ceramic/metal joint material is made at a high temperature, the residual stress development when it is cooled from bonding temperature to room temperature due to remarkable difference of thermal expansion coefficient between ceramic and metal. As residual stress at ceramic/metal joints influences the strength of joints, it is important to estimate residual stress quantitatively. In this study, it is attempted to estimate joint residual stress of $Si_3N_4/STS304$ joints quantitatively and to compare the strength of Joints. The difference of residual stress is measured when repeated thermal cycle is loaded under the conditions of the practical use of the ceramic/metal joint. And 4-point bending test is performed to examine the influence of residual stress on fracture strength. As a residual it is known that the stress of joint decreases as the number of thermal cycle increases.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.227-229
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• 1995

Using thermal oxide SiO$_2$ as a dielectrical isolation layer, SOI Hall sensors without pn junction isolation have been fabricated on Si/SiO$_2$/Si structures. The SOI structure was formed by SDB (Si- wafer direct bonding) technology. The Hall voltage and the sensitivity of Si Hall devices implemented on the SDB SOI structure show good linearity with respect to the appled magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average 600V/V.T. In the trmperature range of 25 to 300$^{\circ}C$, the shifts of TCO(Temperature Coefficient of the Offset Voltage) and TCS(Temperature Coefficient of the Product Sensitivity) are less than ${\pm}$ 6.7x10$\^$-3/ C and ${\pm}$8.2x10$\^$04/$^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of Hall sensors with a high-sensitivity and high-temperature operation.

• 대한기계학회논문집A
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• 제28권9호
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• pp.1408-1414
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• 2004

The use of flip-chip technology has many advantages over other approaches for high-density electronic packaging. ACF (anisotropic conductive film) is one of the major flip-chip technologies, which has short chip-to-chip interconnection length, high productivity, and miniaturization of package. In this study, thermal fatigue lift of ACF bonding flip-chip package has been predicted. Elastic and thermal properties of ACF were measured by using DMA and TMA. Temperature dependent nonlinear hi-thermal analysis was conducted and the result was compared with Moire interferometer experiment. Calculated displacement field was well matched with experimental result. Thermal fatigue analysis was also conducted. The maximum shear strain occurs at the outmost located bump. Shear stress-strain curve was obtained to calculate fatigue life. Fatigue model for electronic adhesives was used to predict thermal fatigue life of ACF bonding flip-chip packaging. DOE (Design of Experiment) technique was used to find important design factors. The results show that PCB CTE (Coefficient of Thermal Expansion) and elastic modulus of ACF material are important material parameters. And as important design parameters, chip width, bump pitch and bump width were chose. 2$^{nd}$ DOE was conducted to obtain RSM equation far the choose 3 design parameter. The coefficient of determination ($R^2$) for the calculated RSM equation is 0.99934. Optimum design is conducted using the RSM equation. MMFD (Modified Method for feasible Direction) algorithm is used to optimum design. The optimum value for chip width, bump pitch and bump width were 7.87mm, 430$\mu$m, and 78$\mu$m, respectively. Approximately, 1400 cycles have been expected under optimum conditions. Reliability analysis was conducted to find out guideline for control range of design parameter. Sigma value was calculated with changing standard deviation of design variable. To acquire 6 sigma level thermal fatigue reliability, the Std. Deviation of design parameter should be controlled within 3% of average value.

• 대한기계학회논문집A
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• 제34권4호
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• pp.391-398
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• 2010

금속은 가공성이 우수하기 때문에 다양한 형태의 구조물이나 격막을 제작할 수 있다. 이런 금속 구조물이나 격막에 민감도가 월등히 우수한 실리콘 스트레인 게이지를 적용할 경우 그 응용 범위가 다양해질 수 있다. 이에 금속구조물에 다결정 실리콘 스트레인 게이지를 접착한 형태의 센서를 제안하였다. 실리콘 기판을 이용해 박막형 다결정 실리콘 스트레인 게이지를 제작하기 위한 제작공정을 확립하였으며, 제작된 실리콘 스트레인 게이지를 금속 변형부 위에 접착하기 위한 접착공정을 확립하였다. 이후 금속 외팔보에 실리콘 스트레인 게이지를 글래스 프릿 접착하여 성능평가를 실시하였다. 성능평가 결과 게이지팩터는 34.0 의 값을 가졌으며, TCR(Temperature Coefficient of Resistance)은 $-328\;ppm/^{\circ}C$의 값을 가졌다.

• 마이크로전자및패키징학회지
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• 제15권2호
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• pp.7-15
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• 2008

본 논문에서는 ACF를 이용한 CCM용 COF 어셈블리의 실장 기술을 연구하고 COF 어셈블리의 신뢰성 분석을 수행하였다. 열팽창계수, 모듈러스, 유리전이온도 등 경화 후 ACF의 열-기계적 물성들을 분석하였으며, ACF의 경화거동 결과를 바탕으로 COF 접합공정 온도 및 시간을 최적화하였으며, 도전입자의 변형 관찰 및 전기적 접촉 저항 측정을 통해 본딩 압력에 대한 최적화를 수행하였다. 또한 ACF 물질 특성이 COF어셈블리의 신뢰성에 미치는 영향을 알아보기 위해 열-싸이클 시험, 고온 유지 시험, 고온고습 시험을 수행하였다. 신뢰성 시험 수행 후 ACF를 이용한 COF 어셈블리의 신뢰성에 가장문제가 되고 있는 점은 열-싸이클 신뢰성 시험에서 나타난 ACF joint의 접촉 저항 증가 문제였고, 이는 ACF 자체의 열-기계적 물성과 밀접한 관계가 있음을 확인하였다.

• 한국자기학회지
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• 제11권5호
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• pp.226-231
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• 2001

Mn-Zn 페라이트 단결정과 ZnO가 6 mol% 첨가된 SiO$_2$-PbO 다성분계 유리를 700, 800, 900, 1000 $^{\circ}C$에서 열처리시킨 후 계면반응과 자기적 특성 변화를 분석하였다. 계면반응분석 결과, 계면에 2차상은 생성되지 않았으며, 계면의 페라이트 부위에 Zn 농도가 증가하였으며 반대로 Mn 농도는 감소하였다. 열처리 온도가 증가함에 따라 접합시편의 초기 투자율 값이 떨어져, 주파수 100 KHz 에서의 700 $^{\circ}C$ 열처리 시편의 초기투자율은 1766이었으나 1000 $^{\circ}C$에서는 907로 감소하였다. 이러한 초기투자율의 감소는, 계면반응 시 페라이트의 용해 및 성분 원소들의 확산으로 인한 자성 소실부위 발생 및 계면의 페라이트 부위에 생성된 Zn농도 증가 층과의 열팽창계수 타이에 의한 잔류응력 발생에 의한 것으로 판단되었다.

• 동력기계공학회지
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• 제9권4호
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• pp.137-142
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• 2005

The effects of temperature and initial crack length on impact fracture behavior of side plate material of 35 ton class FRP ship, which are composed by glass fiber and unsaturated polyester resin, were investigated. Impact fracture toughness of GF/PE composites displayed maximum value when the temperature of specimen is room temperature and $50^{\circ}C$, and with decrease in temperature of specimen, impact fracture toughness decreased. Impact fracture energy of GF/EP composites decreased with increase in initial crack length of specimen, and this value decreased rapidly when the temperature of specimen is lowest, $-25^{\circ}C$,. It is believed that sensitivity of notch on impact fracture energy were increased with decrease in temperature of specimen. As the GF/EP composites exposed in low temperature, impact fracture toughness of composites decreased gradually owing to the decrease of interface bonding strength caused by difference of thermal expansion coefficient between the glass fiber/polyester resin. Further, decrease of interface bonding strength of composites with decrease in specimen temperature was ascertained by SEM photograph of impact fracture surface.

• 수산해양기술연구
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• 제45권3호
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• pp.188-193
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• 2009

The present study was undertaken to evaluate the effect of temperature on the results of Charpy impact test for glass fiber reinforced polyurethane(GF/PUR) composites. The Charpy impact test were conducted in the temperature range from -50$^{\circ}$ to 50$^{\circ}$. The impact fracture toughness of GF/PUR composites was considerably affected by temperature and it was shown that the maximum value was appeared at room temperature. It is believed that sensitivity of notch on impact fracture energy were increased with decrease in temperature of specimen. As the GF/PUR composites exposed in low temperature, impact fracture toughness of composites decreased gradually owing to the decrease of interface bonding strength caused by difference of thermal expansion coefficient between the glass fiber/polyurethane resin. And decrease of interface bonding strength of composites with decrease in specimen temperature was ascertained by SEM photographs of Charpy impact fracture surface.

• 한국전기전자재료학회논문지
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• 제21권3호
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• pp.265-271
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• 2008

TCP(Tape Carrier Package), COG (Chip On Glass), COF(Chip On Film) are three methods for connecting LDI(LCD Driver IC) with LCD panels. Especially COF is growing its portion of market place because of low cost and fine pitch correspondence. But COF has a problem of the lead broken failure in LCD module process and the usage of customer. During PCB (Printed Circuit Board) bonding process, the mismatch of the coefficient of thermal expansion between PCB and D-IC makes stress-concentration in COF lead, and also D-IC bending process during module assembly process makes the level of stress in COF lead higher. As an affecting factors of lead-broken failure, the effects of SR(Solder Resister) coating on the COF lead, surface roughness and grain size of COF lead, PI(Polyimide) film thickness, lead width and the ACF(Anisotropic Conductive Film) overlap were studied, The optimization of these affecting manufacturing processes and materials were suggested and verified to prevent the lead-broken failure.

• Journal of Welding and Joining
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• 제19권3호
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• pp.311-316
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• 2001

This paper presents that the affecting factors to the solderability and initial reliability. It is the factor that the coefficient of thermal expansion between package and PCB(Printed Circuit Board), the quantity of solder paste and reflow condition, and Au thickness of the solder ball pad on polyimide tape. As the reflow soldering condition for 48 ${\mu}BGA$ is changed, it is estimated that the quantity of Au diffusion at eutectic Sn-Pb solder surface and initial bonding strength of eutectic Sn-Pb solder and lead free solder. It is the result that quantitative measurement of Au diffusion quantity is difficult, but the shear strength of eutectic Sn-Pb solder joint is 842 mN at first reflow and increases 879 mN at third reflow. The major failure mode in solder is judged solder fracture. So, Au diffusion quantity is more affected by reflow temperature than by the reflow times.