• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.718-721
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• 2004

The $(Sr_{0.9}Ca_{0.1})TiO_3$(SCT) thin films are deposited on Pt-coated electrode$(Pt/TiN/SiO_2/Si)$ using RF sputtering method at various substrate temperature. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$. The crystallinity of SCT thin films were increased with increase of substrate temperature in the temperature range of $100\sim500[^{\circ}C]$. The dielectric constant of SCT thin films were increased with the increase of substrate temperature, and changed almost linearly in temperature ranges of $-80\sim+190[^{\circ}C]$. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the substrate temperature increases.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.233-233
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.375-377
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• 1998

The magneto-optical properties of Co/Co$_2$TiSn two-phase magnet films were studied. These films show that relatively large Kerr rotations which are -0.4 deg. at the wavelength of 400 nm, compared to that of pure Co. It is conceivable that the magneto-optical effects may be due to both contributions of ferromagnetic Co matrix and ferromagnetic Co$_2$TiSn Heusler alloy precipitate. The perpendicular magnetization curve domonstrates a typical bubble domain hysteresis loop. the saturation magnetization change of the annealed film is less sensitive to temperature in the low temperature region and the Curie temperature of Co$_2$TiSn Heusler alloy precipitate is a little higher in the annealed film. These can be explained by the increase of the number of Co-Co exchange interaction in Heusler alloy structure resulting from the change of chemical ordering by annealing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.705-710
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• 2003

MoO$_3$thin films were deposited on electrode of alumina substrates in $O_2$atmosphere by RF reactive sputtering using molybdenum metal target. The deposition was performed at 30$0^{\circ}C$ with 350 W of a forward power in an Ar-O$_2$atmosphere. The working pressure was maintained at 3$\times$10$^{-2}$ torr and all deposited films were annealed at 50$0^{\circ}C$ for 5 hours. The surface morphology of films was observed by using a SEM and crystalline phases were analyzed by using a XRD. To investigate gas sensing characteristics of the doped MoO$_3$thin film, Co, Ni and Pt were used as dopants. The sensing properties were investigated in term of gas concentration under exposure of reducing gases such as H$_2$, NH$_3$and CO at optimum working temperature. Co-doped MoO3 thin film shows the maximum 46.8 % of sensitivity in NH$_3$ and Ni-doped MoO$_3$thin film exhibits 49.7 % of sensitivity in H$_2$.

• Journal of the Korean Society for Heat Treatment
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• v.21 no.1
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• pp.26-32
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• 2008

Effects of annealing treatment on microstructure and mechanical property of co-sputtered TiNi thin films were studied. As-deposited films showed amorphous state. However, above annealing temperature of $500^{\circ}C$ martensite phase (B19'), precipitate phase ($Ti_2Ni$) and a small amount of parent phase ($B_2$) were present, and phase transformation behaviors were three multi-step phase transformations $B19^{\prime}{\rightarrow}B_2$ and $B_2{\rightarrow}R-phase$ and $R-phase{\rightarrow}B19^{\prime}$. Increase of martensite transformation temperature, increase of microhardness and Young's modulus of TiNi films annealed above $500^{\circ}C$ were discussed in terms of precipitate phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.452-455
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• 2000

Diamond thin films were synthesized on WC-Co substrate at various experimental parameters using 13.56MHz RF PACVD(radio frequency plasma-assisted chemical vapor deposition). In order to increase the nucleation density, the WC-Co substrate was polished with 3$\mu\textrm{m}$ diamond paste. And the WC-Co substrate was pretreated in HNO$_3$: H$_2$O = 1:1 and O$_2$ plasma. In H$_2$-CH$_4$gas mixture, the crystallinity of thin film increased with decreasing CH$_4$concentration at 800W discharge power and 20torr reaction pressure. In H$_2$-CH$_4$-O$_2$gas mixture, the crystallinity of thin film increased with increasing O$_2$concentration at 800W discharge power, 20torr reaction pressure and 4% CH$_4$concentration.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.05a
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• pp.46-47
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• 2000

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.87.2-87.2
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• 2008

• Journal of the Korean Electrochemical Society
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• v.9 no.4
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• pp.141-150
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• 2006

Nanocrystalline CoW thin/thick film alloys were electodeposited from citrate baths to investigate the influences of metal ion concentration, current density and solution pH on chemical composition, current efficiency, residual stress, surface morphology, and microstructure of the film. Deposit W (tungsten) content in CoW thin/thick film increased with increasing W ion concentration, current density, and solution pH in the plating bath. It was observed that residual stress in CoW thin/thick film decreased with increasing W ion concentration and solution pH. CoW thin film exhibited mixed phases of hop Co [(100) and (002)] and hcp $Co_3W$ [(002) and (201)] at W ion concentration with 0.02 to 0.08 M. The microstructure of CoW thin film at W ion concentration of 0.1 to 0.2 M was close to amorphous phase. The dominant phases were found to be hop Co (002) and hop $Co_3W$ [(200), (002) and (201)] at the current densities of 5, 10, 25, and $100mA{\cdot}cm^{-2}$ CoW thin film at the current densities of 50 and $75mA{\cdot}cm^{-2}$ was close to amorphous phase. At solution pH 8.7, CoW thin film exhibited hcp Co (002) and hop $Co_3W$ [(200), (002) and (201)]. Below solution pH 8.7, CoW thin film exhibited amorphous microstructure. The optimum electrodeposition conditions for CoW thin/thick film were found to be W ion concentration of 0.08 M, current density of $10mA{\cdot}cm^{-2}$, and solution pH 8.7.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.623-626
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• 1995

High coercivity thin $Fe_{3}O_{4}$ and ${\gamma}-Fe_{2}O_{3}$ films were deposited on Si substrate under well controlled $O_{2}$ partial pressure by dcreactive magnetron sputtering. The coercivity of as-deposited maggnetite films is below 640 Oe. After cxidizing at $360^{\circ}C$ for 10 minutes, the films transform to maghemite ${\gamma}-Fe_{2}O_{3}$ completely, and the coercivity increases greatly to 2100~4120 Oe, depending on modification of not with minor addition of Co or/and Mn. The orign of coercivity enhancement is attributed mainly to magnetic anisotropy arisen from interfacial stress. The addition of 5 at% Co and 5 at% Mn greatly enhances coercivity and squareness ratio. These films are potential for ultra-high density recording applications.