• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2005.10a
• /
• pp.344-349
• /
• 2005

This paper is studied on the effect of TiAlN coated ball end mill on cutting characteristic of high hardness steels in dry cutting condition without coolant. KP4 steels[HRC32] and STD11[HRC60] heat treated steels wert: used as the workpiece and WC-Co ball end mill and single and multi layer TiAlN coated ball end mill were utilized. Results showed that TiAlN coated ball end mill were increased the cutting length than WC-Co ball end mill in the cutting speed$[245\~320m/min]$ about $2\~5$ times for KP4 steels and about $2.7\~4.3$ times for STD11 heat treated steels. The multi layer TiAlN coated ball end mill is good about $1.2\~1.7$ times for KP4 steels and STD11 steels than single layer coated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.60-60
• /
• 2008

We manufactured Liquid Crystal Polymer (LCP) and (1-x)$BaTiO_3-xSrTiO_3$(BST) ceramic composites and investigated dielectric properties to use as embedded capacitor in printed circuit boards and replace LTCC substrates. The dielectric properties of these composites are varied with volume fraction of BST and ratios of BT/ST. Dielectric constants are in the range of 3~28. In addition, we could get low TCC and High Q value that could not achieve in other ceramic-polymer composites. Especially, in composite with x=0.4 and 50vol% BST, the dieletric constant and Q-value are 27 and 300, respectively. And more TCC is -116~145ppm/$^{\circ}C$ in the temperature range of -55~$125^{\circ}C$. We think that this composites can be used high-Q substrate material like LTCC and embedded temperature compensation capacitor in printed circuit boards.

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.2013-2015
• /
• 2005

In this paper, Effect of $BaSrTiO_3/Li_2CO_3$ on low temperature sintering and dielectric property of thick films has been investigated for variable capacitor on high frequency. The thick films were fabricated by the tape casting and then the structural and dielectric properties as a function of an addition composition ratio and sintering temperature were studied. For the thick film sintered at $1050^{\circ}C$, it was densified to 96% of $BaSrTiO_3$ theoretical density by the addition of 10 $wt{\cdot}%$ $BaSrTiO_3/Li_2CO_3$. Dielectric constant increased and Curie temperature lowered with the increased of $BaSrTiO_3/Li_2CO_3$ content, which probably can be explained by the substitution of $Ba^{3+},Li^{1+}$ on $RaTiO_3$ lattice. The tunability and dielectric loss of the $BaSrTiO_3/Li_2CO_3$ thick film, sintered at $1350^{\circ}C$, were about 26% and 0.234 at $10{\sim}15MHz$, respectively.

• Journal of Korean Society of Environmental Engineers
• /
• v.22 no.12
• /
• pp.2263-2273
• /
• 2000

Catalytic wet air oxidation of acetic acid over Mn-Ce based catalysts deposited on various supports ($SiO_2$, $TiO_2$, $ZrO_2$), $ZrSiO_4$, $ZrO_2(10wt%)/TiO_2$) have been carried out in high pressure microreactors. Also, promotional effects by small addition(O.5~1.0 wt%) of p-type semiconductors (CoO, $Ag_2O$, SnO) have been investigated. From the screening tests for initial activity ranking, both Mn(2.8)-Ce(7.2 wt%) and Ru(O.4)Mn(2.7)-Ce(6.9 wt%) supported on $TiO_2$ were selected as the promising reference candidates. In $Mn-Ce/TiO_2$ reference catalyst, addition of small amount of each p-type semiconductor (Co, Sn and Ag) resulted in activity promotional effect and the degree of the increase was in the following order: Co> Ag > Sn. Especially, $Mn-Ce/TiO_2$ promoted with 0.5 wt% Co gave the 2.6 folds activity increase compared to the reference case attributing to the surface area increase as well as synergy effect. In $Ru-Mn-Ce/TiO_2$ reference catalyst, only Co(1.0 wt%) promoted case showed a little reaction rate increase.

• Polymer(Korea)
• /
• v.38 no.1
• /
• pp.103-107
• /
• 2014

Poly(acrylonitrile-butadiene-styrene) (ABS) composite sheets containing titanium dioxide ($TiO_2$), barium sulfate ($BaSO_4$), calcium carbonate ($CaCO_3$) were prepared by using a co-rotating twin screw extruder, and the reflectance and flexural modulus of the composite sheets were measured. The fillers were well dispersed in ABS matrix. The reflectance of composite sheet was increased with increasing $TiO_2$ and $BaSO_4$ content. Sheet having $TiO_2$ 20 wt% composition, with 5~20 wt% $BaSO_4$ resulted in more than 95% of reflectance. The flexural modulus of composite sheet was increased from 1864 MPa for $ABS/TiO_2/BaSO_4$ 85/10/5 (w/w/w) to 3134 MPa for $ABS/TiO_2/BaSO_4$ 55/20/25 (w/w/w).

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.5
• /
• pp.87-92
• /
• 1998

Ultr shallow p$^{+}$-n junction with Co/Ti bilayer silicidde contact was formed by ion implantation of BF$_{2}$ [energy : (30, 50)keV, dose:($5{\times}10^{14}$, $5{\times}10^{15}$/$\textrm{cm}^2$] onto the n-well Si(100) region and by RTA-silicidation and post annealing of the evaporated Co(120.angs., 170.angs.)/Ti(40~50.angs.) double layer. The sheet resistance of the silicided p$^{+}$ region of the p$^{+}$-n junction formed by BF2 implantation with energy of 30keV and dose of $5{\times}10^{15}$/$\textrm{cm}^2$ and Co/Ti thickness of $120{\AA}$/(40~$50{\AA}$) was about $8{\Omega}$/${\box}$. The junction depth including silicide thickness of about $500{\AA}$ was 0.14${\mu}$. The fabricated p$^{+}$ -n ultra shallow junction depth including silicide thickness of about $500{\AA}$ was 0.14${\mu}$. The fabricated p$^{+}$-n ultra shallow junction with Co/Ti bilayer silicide contact did not show any agglomeration or variation of sheet resistance value after post annealing at $850^{\circ}C$ for 30 minutes. The boron concentration at the epitaxial CoSi$_{2}$/Si interface of the fabricated junction was about 6*10$6{\times}10^{19}$ / $\textrm{cm}^2$./TEX>.

• 한국신재생에너지학회:학술대회논문집
• /
• 2007.06a
• /
• pp.245-245
• /
• 2007

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.245-245
• /
• 2016

본 연구에서는 선형 대향 타겟 스퍼터 (Linear Facing Target Sputtering: LFTS) 시스템을 이용하여 ITO와 Ti doped $In_2O_3$ (TIO) 타겟을 Co-sputtering한 InSnTiO 투명 전극의 전기적, 광학적 특성을 연구하였다. InSnTiO 투명전극의 전기/광학적 및 구조적 특성은 Hall measurement, UV/Vis spectrometry, X-ray Diffraciton 분석법을 통해 최적화 하였고, DC power, substrate to target distance (TSD), target to target distance (TTD), ambient treatment 변수 조절을 통해 최적화된 LFTS InSnTiO 투명전극을 제작하였다. LFTS 공정을 이용한 InSnTiO 투명전극의 성막 공정 중 DC파워와 공정압력 변화에 따른 구조적, 표면적 특성 변화는 Field-Emission Scanning Electron Microscopy (FE-SEM) 과 X-ray Diffractometer (XRD) 분석을 통해 관찰하였다. 이렇게 증착된 InSnTiO 투명전극은 급속열처리 시스템으로 (Rapid Thermal Annealing system) 후열처리를 진행하여 투과도의 향상과 면저항의 감소를 확인하였다. 본 연구에서는 다양한 분석을 통해 Co-sputtering한 InSnTiO 박막의 특성과 다양한 장점을 소개한다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.178.1-178.1
• /
• 2015

In and Ga doped ZnO (IGZO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on glass substrate and TiO2-deposited glass substrates to consider the effect of a thin TiO2 buffer layer on the optical and electrical properties of the films. The thicknesses of the TiO2 buffer layer and IGZO films were kept constant at 5 and 100 nm, respectively. Since the IGZO/TiO2 bi-layered films show the higher FOM value than that of the IGZO single layer films, it is supposed that the IGZO/TiO2 bi-layered films will likely perform better in TCO applications than IGZO single layer films.

• Journal of the Korean Ceramic Society
• /
• v.24 no.1
• /
• pp.41-46
• /
• 1987

When barium titanate was synthesized in soild-solid reaction the abnormal expansion occurred from 900$^{\circ}C$ to 1100$^{\circ}C$. The equi-molecular mixture of BaCO3 and TiO2 was sintered from 800$^{\circ}C$ to 1300$^{\circ}C$ on the condition of air, vacuum and CO2 atmosphere. After that the specimens were tested closely with XRD, Dilatometer, SEM and EDS. The result indicated that; 1. The crystal phase which was concerned with expansion of BaTiO3 was Ba2TiO4 as the intermediate crystal phase. 2. The formation of Ba2TiO4 was affected by the firing atmosphere. 3. The expansion occurred when BaTiO3 changed to Ba2TiO4 and pore also expanded by the expansion of BaTiO3 body just as the model of expansion.