• Journal of the Korean Magnetics Society
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• v.21 no.6
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• pp.214-218
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• 2011

In this study, we have systematically investigated the effect of sputtering conditions on the microstructural properties of Ag/CoFeB thin film on MgO substrate. It was found that the crystallinity and surface roughness of the Ag film strongly depends on the Ar sputtering pressure and sputtering power. Epitaxial growth of Ag(100) film on MgO(100) substrate was achieved under the sputtering conditions of high sputtering power and elevated temperature. XRR (X-ray reflectivity) and high-resolution TEM (transmission electron microscopy) measurements also revealed the interfacial roughening in the Ag/CoFeB interface due to the island structure formation and intermixing between Ag and CoFeB.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1305-1309
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• 2003

To utilize FeCoSiB amorphous films for magnetoelastic sensors, the temperature dependency of magnetization (M-T curve) and the magnetization properties of the amorphous films were investigated in this study. As the amount of cobalt In the films increased, the Curie temperature decreased but the crystallization temperature increased. In addition to this, the crystallization temperature was lower than the Curie temperature in the film containing 20 at% cobalt. The optimized annealing condition was set up by analyzing the H-T curve. And then, the amorphous film that has excellent magnetic properties and uni-axal anisotropy could be prepared for construction of the magnetoelastic sensor devices. The coercive force of the film was below 0.5 Oe and the anisotripic field was about 5 Oe.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.535-540
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• 1994

Thin film magnet was fabricated by radio frequency magnetron sputtering using $Nd_13/(Fe.Co)_{70}B_{17}$ alloy target and magnetic properties were investigated according to sputtering conditions from the metallurgical point of view. we could obtain the best preferred orientation of $Nd_2Fe_{14}B$ phase at substrate temperatures between $450^{\circ}C$ and $460^{\circ}C$ with the input power 150W, and thin films had the anisotropic magnetic properties. But, as the thickness of thin film increased, the c-axis orientation gradually tended to be disordered and magnetic properties also become isotropic. Just like Nd-Fe-B meltspun ribbon, the microstructure of thin film magnet was consisted of very find cell shaped $Nd_2Fe_{14}B$ phase and the second phase along grain boundary. While, domain structure showed maze patterns whose magnetic easy axis was was perpendicular to film plane of thin film. It was concluded from these results that the perpendicualr anisotropy in magnetization was attributed to the perpendicular alignment of very find $Nd_2Fe_{14}B$ grains in thin film.

• Journal of the Korean Magnetics Society
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• v.24 no.6
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• pp.165-170
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• 2014

We analyzed the ferromagnetic and spin wave resonance signals measured in amorphous CoFeB thin films with different thickness. The ferromagnetic resonance field ($H_{FMR}$) was not depend on the thickness of CoFeB films, but the spin wave resonance field ($H_{SWR}$) was well fitted with the theoretical prediction depending on the thickness. The uniaxial anisotropy field of $H_k$ = 37 Oe was obtained from the angular dependent $H_{FMR}$ in CoFeB films. The $H_{SWR}$ showed same angular behaviors with $H_{FMR}$, however, the amplitude of spin wave resonance signals showed 5.7 times higher than that of ferromagnetic resonance signals in CoFeB film with t = 100 nm. The higher signals were due to the two reasons; one was the small damping for the spin wave propagation without degradation, the other was uniform magnetization for the ideal standing wave modes.

• Journal of the Korean Magnetics Society
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• v.21 no.1
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• pp.10-14
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• 2011

We have measured the ferromagnetic resonance (FMR) signal in as deposited and $400^{\circ}C$ annealed CoFeB/MgO thin film to investigate the annealing effect on magnetic anisotropies and FMR linewidth (${\Delta}H_{PP}$). The uniaxial anisotropy field ($H_{K1}$) was only observed in the as deposited sample. Whereas, in the $400^{\circ}C$ annealed sample, the biaxial anisotropy field ($H_{K2}$) was additionally observed in accompany with uniaxial anisotropy field ($H_{K1}$). The appearance of biaxial anisotropy fields was originated from the crystalline growth of bcc CoFeB(001) from the MgO(001) interface and by the B diffusion during thermal annealing. Also, the ${\Delta}H_{PP}$ of $400^{\circ}C$ annealed sample was increased compared with that of as deposited sample, which was due to the broad distribution of the magnetization axis by the biaxial anisotropy.

• Journal of Sensor Science and Technology
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• v.17 no.3
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• pp.203-209
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• 2008

Thick film formaldehyde (HCHO) gas sensors were fabricated by using $La_1_{-x}Sr_xMO_3$ (M= Fe, Co, Mn) ceramics. The powders of $La_1_{-x}Sr_xMO_3$ (M=Fe, Co, Mn) were synthesized by conventional solid-state reaction method. By using the $La_1_{-x}Sr_xMO_3$ (M=Fe, Co, Mn) paste, the thick-film formaldehyde sensors were prepared on the alumina substrate by silkscreen printing method. The experimental results revealed that $La_1_{-x}Sr_xMO_3$ (M= Fe, Co, Mn) ceramic powder has a perovskite structure and the thick-film sensor shows excellent gas-sensing characteristics to formaldehyde gas (sensitivity of $La_{0.8}Sr_{0.2}FeO_3$, S= 14.7 at operating temperature of $150^{\circ}C$ in 50 ppm HCHO ambient).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.233-233
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.

• Journal of Magnetics
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• v.18 no.2
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• pp.155-158
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• 2013

FeCoB films were being prepared on a Ru underlayer by using the oblique incidence of sputtered and back-scattered particles which have a high in-plane magnetic anisotropy field $H_k$ above 400 Oe. It is suitable to attain such deposition condition when facing targets sputtering system. The in-plane X-ray diffraction analysis clarified that there is anisotropic residual stress which is the origin of the high in-plane magnetic anisotropy. The directional crystalline alignment and inclination of crystallite growth were also observed. Such anisotropic crystalline structures may affect the anisotropic residual stress in the films. The B content of 5.6 at.% was appropriate to induce such anisotropic residual stress and $H_k$ of 410 Oe in this experiment. The film with B content of 6 at.% possessed large saturation magnetization of 22 kG and high $H_k$ of 500 Oe. The film exhibited high ferromagnetic resonance frequency of 9.2 GHz.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.252-255
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• 1998

In this paper, we investigate the magneto-impedance(M1) effect of the FeCoSiB amorphous magnktic films. The amorphous magnetic film having near zero magnetostriction is fabricated by using the sputtering method, and then annealed in magnetic field. When the external magnetic field is directly applied to the fabricated film, the voltage amplitude between both side of the magnetic film varies about 76.2% at 120[MHzl and the impedance varies about 2.1%/0e. Thus, we find that the fabricated magnetic film has the characteristics of good sensor element.

• Journal of the Korean Magnetics Society
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• v.21 no.3
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• pp.83-87
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• 2011

We have analyzed the torque signals measured in synthetic antiferromagnetic (SAF) coupled CoFeB/Ru/CoFeB thin film, which signals were drastically changed at flopping field ($H_F$) and saturation field ($H_s$). The minimum value of negative uniaxial anisotropy constant ($-\;K_1$) was appeared at HF. The $-\;K_1$ was due to the zero net magnetization by the antiferromagnetic coupling between two ferromagnetic layers. Whereas, the biaxial anisotropy constant (K2) was induced in the field range of $H_F$ < H < $H_s$. The induced $K_2$ was originated from deviation angles between magnetization directions of two ferromagnetic layers. And at H > $H_s$, intrinsic uniaxial anisotropy constant of CoFeB layer was observed. These change of the anisotropy constant with magnetic field was explained by the magnetization process of two ferromagnetic layers based on Stoner-Wohlfarth model calculation for SAF thin film.