• Electrical & Electronic Materials
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• 제5권1호
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• pp.8-13
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• 1992

일련의 Al/Tb-Fe-Co 다층박막 시편이 DC마그네트론 스퍼터링에 의해 제조되었다. 이 박막들은 (xA/yB)n의 형태이고 여기서 x와 y는 각각 Al 및 Tb-Fe-Co 박막의 두께를 나타내고 n은 각 박막의 수를 나타낸다. 각 박막의 두께는 2~40nm이다. Al과 Tb-Fe-Co박막의 두께변화에 따른 다층박막의 자기적 성질이 vibration sample magnetometry(VSM)에 의해 측정되었다. 이들 다층박막은 동일한 스퍼터링조건에서 제조되고 수평 자기적 이방성 특성을 보이고 있는 단층 Tb-Fe-Co박막을 기준시편으로 하여 자기적 성질이 비교되었다. 다층박막 시스템에서는 현저한 계면 또는 박막두께의 효과가 발견되었으며 이들 효과에 의해 단층박막의 수평자기체가 다층박막에서는 강한 수직자기체로 변화되는 것을 알 수 있고, 또한 Al과 Tb-Fe-Co합금 경계구역에 스퍼터링에 따른 약 2nm두께의 dead layer가 존재함이 입증 되었다.

• Journal of the Korean Magnetics Society
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• 제21권6호
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• pp.214-218
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• 2011

In this study, we have systematically investigated the effect of sputtering conditions on the microstructural properties of Ag/CoFeB thin film on MgO substrate. It was found that the crystallinity and surface roughness of the Ag film strongly depends on the Ar sputtering pressure and sputtering power. Epitaxial growth of Ag(100) film on MgO(100) substrate was achieved under the sputtering conditions of high sputtering power and elevated temperature. XRR (X-ray reflectivity) and high-resolution TEM (transmission electron microscopy) measurements also revealed the interfacial roughening in the Ag/CoFeB interface due to the island structure formation and intermixing between Ag and CoFeB.

• Journal of the Korean Magnetics Society
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• 제24권6호
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• pp.165-170
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• 2014

We analyzed the ferromagnetic and spin wave resonance signals measured in amorphous CoFeB thin films with different thickness. The ferromagnetic resonance field ($H_{FMR}$) was not depend on the thickness of CoFeB films, but the spin wave resonance field ($H_{SWR}$) was well fitted with the theoretical prediction depending on the thickness. The uniaxial anisotropy field of $H_k$ = 37 Oe was obtained from the angular dependent $H_{FMR}$ in CoFeB films. The $H_{SWR}$ showed same angular behaviors with $H_{FMR}$, however, the amplitude of spin wave resonance signals showed 5.7 times higher than that of ferromagnetic resonance signals in CoFeB film with t = 100 nm. The higher signals were due to the two reasons; one was the small damping for the spin wave propagation without degradation, the other was uniform magnetization for the ideal standing wave modes.

• Journal of the Korean Vacuum Society
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• 제9권4호
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• pp.389-393
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• 2000

Effects of Co addition and heat treatment on the magnetic properties of Fe-Si-B thin films were investigated. The compositions of metalloids, i.e, B and Si, in the alloys were kept 10 at.% each. Heat treatments were carried out in the temperature range from 100 to $300^{\circ}C$ for up to 60 min. Amorphous thin films of FeCoSiB were deposited on the water-cooled substrates by dc magnetron sputtering. The composition of thin films was controlled by placing proper number of pellets of alloying elements and analyzed by ICP, resulting in $Fe_{80-X}Co_ XB_{10}Si_{10}$ (X=8~18 at.%). Saturation magnetization of the alloys increased as Co concentration increased up to 10 at.% and then decreased with further increase of Co concentration. However, coercive force of the films decreased with the increase of Co concentration. Furthermore, the coercive force was also reduced by the annealing due to the residual stress relief.

• Journal of the Korean Magnetics Society
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• 제21권1호
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• pp.10-14
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• 2011

We have measured the ferromagnetic resonance (FMR) signal in as deposited and $400^{\circ}C$ annealed CoFeB/MgO thin film to investigate the annealing effect on magnetic anisotropies and FMR linewidth (${\Delta}H_{PP}$). The uniaxial anisotropy field ($H_{K1}$) was only observed in the as deposited sample. Whereas, in the $400^{\circ}C$ annealed sample, the biaxial anisotropy field ($H_{K2}$) was additionally observed in accompany with uniaxial anisotropy field ($H_{K1}$). The appearance of biaxial anisotropy fields was originated from the crystalline growth of bcc CoFeB(001) from the MgO(001) interface and by the B diffusion during thermal annealing. Also, the ${\Delta}H_{PP}$ of $400^{\circ}C$ annealed sample was increased compared with that of as deposited sample, which was due to the broad distribution of the magnetization axis by the biaxial anisotropy.

• Proceedings of the Korean Magnestics Society Conference
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• 한국자기학회 2012년도 자성 및 자성재료 국제학술대회
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• pp.57-58
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• 2012

이 연구는 BLS 실험을 이용하여 $Co_{40}Fe_{40}B_{20}$ 박막의 자성특성을 연구하였다. CoFeB의 열처리 온도에 따라서 $4{\pi}MS$는 일정하였고, $A_{ex}$는 $300^{\circ}C$ 이상에서 열처리한 시료의 경우 비슷한 값을 가짐을 확인하였다.

• Journal of the Korean Magnetics Society
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• 제13권5호
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• pp.187-192
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• 2003

The magnetic and thermal properties of NiFe/[IrMn-Mn]/CoFe with Mn additions have been studied. As-deposited CoFe pinned layers with [IrMn-Mn]layer had dominantly larger exchange biasing field ( $H_{ex}$) and blocking temperature ( $T_{b}$) than those with pure I $r_{22}$M $n_{78}$ used. The $H_{ex}$ and $T_{b}$ improved with 76.8-78.1 vol% Mn, but those of the NiFe/IrMn/CoFe dropped considerably with more addition of 0.6 vol % Mn. The average x-ray diffraction peak ratios of fcc [(111)CoFe, NiFe]/(111)IrM $n_3$ textures for the Mn inserted total vol of 75.5, 77.5, and 79.3% were about 1.4, 0.8, and 0.6, respectively. For the sample without Mn inserted layer, the $H_{ex}$ between IrMn and CoFe layers was almost zero, but it increased to 100 Oe after annealing of 250 $^{\circ}C$. For as-grown two multilayers samples with ultra-thin Mn layers of 77.5 and 78.7 vol %, the $H_{ex}$s were 259 and 150 Oe, respectively. In case of IrMn with 77.5 vol% Mn, the $H_{ex}$ was increased up to 475 Oe at 350 $^{\circ}C$ but decreased to 200 Oe at 450 $^{\circ}C$, respectively. The magnetic properties and thermal stabilities of NiFe/[IrMn-Mn]/CoFe multilayer were enhanced with Mn additions. In applications where higher $H_{ex}$ and $T_{b}$ are required, proper contents of Mn can be used. be used. used.

• Korean Journal of Materials Research
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• 제8권3호
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• pp.252-255
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• 1998

In this paper, we investigate the magneto-impedance(M1) effect of the FeCoSiB amorphous magnktic films. The amorphous magnetic film having near zero magnetostriction is fabricated by using the sputtering method, and then annealed in magnetic field. When the external magnetic field is directly applied to the fabricated film, the voltage amplitude between both side of the magnetic film varies about 76.2% at 120[MHzl and the impedance varies about 2.1%/0e. Thus, we find that the fabricated magnetic film has the characteristics of good sensor element.

• Proceedings of the Korean Magnestics Society Conference
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• 한국자기학회 2004년도 동계학술연구발표회 논문개요집
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• pp.87-88
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• 2004

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 1998년도 추계학술발표강연 및 논문개요집
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• pp.138-138
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• 1998