• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.43-46
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• 1998

We have investigated the formation and thermal stability of cobalt aluminide(CoAl) thin films on GaAs. In order to obtain cobalt-aluminide thin films, we deposited a multilayer of Co/Al on GaAs, and subsequently annealed the samples at 80$0^{\circ}C$ for 30 min. After annealing, single-phase cobalt aluminide was produced showing a flat and uniform interface with GaAs. which indicates that cobalt aluminide (CoAl) is thermally stable with GaAs. In addition, the adherence and mechanical properties of the as-deposited, and annealed Co/Al multilayer structure on GaAs are compatible with those required for device fabrication processes. The electrical property of the CoAl/GaAs contact shows rectifying characteristics, indicating that the diodes were usable as rectifying gate electrodes.

• Electrical & Electronic Materials
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• v.5 no.1
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• pp.8-13
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• 1992

일련의 Al/Tb-Fe-Co 다층박막 시편이 DC마그네트론 스퍼터링에 의해 제조되었다. 이 박막들은 (xA/yB)n의 형태이고 여기서 x와 y는 각각 Al 및 Tb-Fe-Co 박막의 두께를 나타내고 n은 각 박막의 수를 나타낸다. 각 박막의 두께는 2~40nm이다. Al과 Tb-Fe-Co박막의 두께변화에 따른 다층박막의 자기적 성질이 vibration sample magnetometry(VSM)에 의해 측정되었다. 이들 다층박막은 동일한 스퍼터링조건에서 제조되고 수평 자기적 이방성 특성을 보이고 있는 단층 Tb-Fe-Co박막을 기준시편으로 하여 자기적 성질이 비교되었다. 다층박막 시스템에서는 현저한 계면 또는 박막두께의 효과가 발견되었으며 이들 효과에 의해 단층박막의 수평자기체가 다층박막에서는 강한 수직자기체로 변화되는 것을 알 수 있고, 또한 Al과 Tb-Fe-Co합금 경계구역에 스퍼터링에 따른 약 2nm두께의 dead layer가 존재함이 입증 되었다.

• Journal of the Korean Magnetics Society
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• v.8 no.1
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• pp.27-33
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• 1998

We have investigated tunneling magnetoresistance (TMR) properties of Fe/$Al_2O_3$/Co magnetic trilayer junctions sputtered on single-crystal Si (001) substrates. $Al_2O_3$ layers with thicknesses of 50~200 $\AA$ were deposited directly on the bottom ferromagnetic layer by a reactive rf sputtering. For comparsion, we prepared Pt/$Al_2O_3$/Pt tunnel junctions whose current-voltage (I-V) characteristics measured at 300 K indicated that reactively sputtered $Al_2O_3$ is a particularly good material for thin insulating barriers and allows us to form pinhole-free tunnel barriers. The magnetic tunnel junctions exhibit changes of tunnel resistance of about 0.1% at 300 K with an applied magnetic field and it was found that most junctions with Co as a top electrode have rather good I-V and TMR characteristics compared to those with Fe as a electrode. These results were discussed in relation to interfacial on the basis of those for Pt/$Al_2O_3$/Pt.

• Journal of the Korean Chemical Society
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• v.21 no.1
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• pp.53-59
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• 1977

A method of synthesizing $NaAlCO_3(OH)_2$ (Dawsonite) and $KAlCO_3(OH)_2$, was investigated by blowing $CO_2$ gas into sodium and potassium aluminate solutions. The reactions were accomplished at a temperature of 80 to $90^{\circ}C$, while $CO_2$ gas was blowing into the solutions which the molar ratios of $Na_2O/Al_2O_3,\;and\;K_2O/Al_2O_3$ were 6 to 8 and 8 to 10, respectively. It was observed that highly purified Dawsonite and $KAlCO_3(OH)_2$ are produced when Alumina is present in Boehmite at an equilibrium solid phase with a large amount of $HCO_3^-$ in the solutions. The rational formulas of Dawsonite and $KAlCO_3(OH)_2$synthesized under the conditions should be expressed as $NaAlO(OH)HCO_3\;and\;KAlO(OH)HCO_3$, respectively, by IR analysis. In addition, electron microscopic observation also indicated that Dawsonite in a fibrous crystal and $KAlCO_3(OH)_2$ in a needleshaped crystal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.195-195
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• 2008

CAS계 유리에 $CaCO_3-Al_2O_3$ 혼합물 및 화합물을 10, 30 wt% 첨가하여 저온 소걸 및 마이크로파 유전 특성을 고찰하였다. CAS계 유리의 연화온도는 $841^{\circ}C$ 이며, CAS계 유리에 $CaCO_3$ 와 30 wt%의 $CaCO_3-Al_2O_3$ 혼합물을 melting되며, 10 wt%의 $CaCO_3$, $Al_2O_3$, $1CaCO_3-1Al_2O_3$ 혼합물 및 $CaAl_2O_4$ 화합물를 10 wt% 첨가하였을 때 $900^{\circ}C$ 이하에서 소걸이 가능하였다. 복합체의 XRD 상 분석 결과, CaCO3를 첨가하였을 때에는 모든 조성이 비정질을 나타내었고, $Al_2O_3$와 $1CaCO_3-1Al_2O_3$ 혼합물은 $Al_2O_3$ 결정상이 생성되었고, $CaAl_2O_4$ 화합물은 $CaAl_2Si_2O_8$의 hexagonal와 anorthite 결정상이 생성되었다. 따라서 CAS-10 (A, C-A, CA) 복합체는 $900^{\circ}C$에서 각각 유전율 ($\varepsilon_r$) 6.4, 6.9, 5.15 와 품질계수 ($Q^*f$) 2,400, 1,500, 3,000의 마이크로파 유전 특성을 나타내어 LTCC 기판 재료로 사용이 가능하며, 특히 $CaAl_2O_4$ 화합물을 사용하였을 때 가장 우수한 유전 특성을 나타내는 것을 확인하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.5
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• pp.255-264
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• 2013

Cobalt aluminate ($CoAl_2O_4$) is a highly stable pigment with excellent resistance to light, weather, etc., which has resulted in widespread use as a ceramic pigment. Due to the unique optical characteristics, $CoAl_2O_4$ is generally used as a coloring agent to decorate porcelain products, glass, paints and plastics. Here, $CoAl_2O_4$ pigments were synthesized by polymerized complex method and solid state reaction. Then $CoAl_2O_4$ pigment were grinded using the attrition milling with 1 mm size zirconia ball for 3 hours. The attrition milling process was performed at the constant speed of 800 rpm and ball to powder weight ratio (BPR) was 100 : 1. The characteristics of synthesized pigment were analyzed by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), particle size analyser (PSA) and CIE $L^*a^*b^*$. The XRD patterns of $CoAl_2O_4$ show single phase spinel structure. The particle size of $CoAl_2O_4$ measured by FE-SEM, TEM and PSA analysis was in the range of 100~200 nm. The blue color of obtained $CoAl_2O_4$ pigments could be confirmed through CIE $L^*a^*b^*$ measurement.

• Electrical & Electronic Materials
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• v.11 no.10
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• pp.72-77
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• 1998

The effects of Al micro-bumps on the magnetic properties of CoCr(Pt)Ta/Cr films deposited on glass substrates were investigated. The coercivity increased and the coercivity squareness decreased by incorporating Cr/Al underlayers. The cause of the coercivity increase is attributed to the reduction of Co(0002) texture, the increase of magnetic isolation of CoCr(Pt)/Ta grains, and the refinement of CoCr(Pt)/Ta grains deposited on Cr/Al underlayers. The effects of an Al overlayer on the magnetic properties of CoCr(Pt)Ta/Cr films were also studied. The decrease of coercivity squareness is ascribed to the magnetic isolation of CoCr(Pt)Ta grains.

• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.296-300
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• 1999

Cross-shape structures of spin tunneling junctions were fabricated using DC magnetron sputtering and metal masks. The film structures were $substrate/Ta/NiFe/FeMn/NiFe/CoFe/Al_2O_3/CoFe/NiFe$ and $substrate/Ta/NiFe/CoFe/ Al_2O_3/CoFe/NiFe/FeMn/NiFe$. Fabrication conditions of insulating layer ($Al_2O_3$) and thickness and sputtering power of each film layer were varied, and maximum magnetoresistance ratio of 24.3 % was obtained. Magnetic characteristic variations in the above mentioned two structures and two types of substrates (Corning glass 7059 and Si(111)) were compared. Annealing of the junctions was performed to find out magnetic characteristic variations expected from the device fabrication. Magneoresistance Ratio were observed to maintain as-deposited value up to 150 $^{\circ}C$ annealing and then to drop rapidly after 180 $^{\circ}C$ annealing.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.1
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• pp.16-22
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• 2011

Al-Co/AlN-Co multilayer films with different layer thicknesses were prepared by using a two-facing target type D.C sputtering (TFTS) system. The deposited films were annealed isothermally at different temperatures and their microstructure, magnetic properties and resistivity were investigated. The magnetization of as-deposited films is very small irrespective of layer thickness. It was found that annealing conditions and layer thickness ratio (LTR) of Al-Co to AlN-Co can control the microstructure as well as the physical properties of the prepared films. The resistivity and magnetization increase and the coercivity decreases with decreasing LTR. High resistivity and sufficient magnetization were obtained for the films with LTR = 0.35. Films having such considerable magnetization and resistivity will be a potential candidate to be used for a high density recording material.

• Korean Journal of Metals and Materials
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• v.49 no.3
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• pp.256-263
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• 2011

We have synthesized Al-Co/AlN-Co multilayer films with different layer thicknesses by using a Two-Facing Target Type dc Sputtering (TFTS) system. The deposited films were annealed isothermally at different temperatures and their microstructure, magnetic properties and resistivity were investigated. The magnetization of the as-deposited films was found to be very small, irrespective of layer thickness. It was found that the annealing conditions and layer thickness ratio of Al-Co to AlN-Co (LTR) were able to control the microstructure, as well as the physical properties of the prepared films. The resistivity and magnetization increased and the coercivity decreased with a decreasing LTR. A high resistivity of 2500 ${\mu}{\Omega}-cm$, a magnetization of 360 $emu/cm^3$, and a coercivity of 5 Oe were obtained for the films with LTR=0.175.