• Korean Journal of Materials Research
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• v.9 no.4
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• pp.341-344
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• 1999

We reported compositional separation(CS) into Co-enriched and Cri-enriched components inside the grains of Co-Cr based thin films prepared by rf sputtering. CS strongly depends on the sputtering conditions of substrate temperature and target composition. Tuning the microstructure of the Co-Cr films is important in order to employ the CS for high-density magnetic recording. We investigated the origin of CS from thermodynamic viewpoint. We employ a spinodal decomposition-like model to describe the origin of the CS in Co-Cr films. We consider the total free energy of the Co-Cr films as the sum of several free energies of; 1) thermodynamic mixing entropy of a binary solid solution, 2) magnetic ordering interaction(MOI) energy below the Curie temperature, and 3) excess interaction energy(XS) caused by the sputtering process as a function of temperature and composition. Those energies distorted the total free energy like the spinodal decomposition and caused the compositionally separated fine microstructure inside the grains. If the second derivative of the total free energy with respect to Cr composition becomes negative at a given substrate temperature, we may observe a metastable compositional separation inside the Co-Cr alloy films. We expect to exploit the microstructure of CS for ultra-high density magnetic recording.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.7
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• pp.1255-1258
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• 2010

In this paper, the $CoSi_2$ thin films with thicknesses of about $5{\mu}m$ were deposited on n-type silicon (111) substrates by RF magnetron sputtering method using a $CoSi_2$ target (99.99%). The flow rate of argon of 50 sccm, substrate temperature of $100^{\circ}C$, RF power of 60 watts, deposition time of 30 minutes, and the vacuum of $1\times10^{-6}$ Torr. The annealing treatments of the $CoSi_2$ thin film were performed from 500, 700 and $900^{\circ}C$ for 1h in air ambient by an electric furnace. In order to investigate the $CoSi_2$ thin film X-ray diffraction patterns were measured using the X-ray diffractometer (XRD). The structure of the thin films were investigated by using scanning the electron microscope (SEM) were used for review. The surface morphology of the thin films was measured with a atomic force microscopy (AFM). Temperature dependence of sheet resistivity and property of Hall effect was measured in the $CoSi_2$ thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.418-422
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• 1998

The Co-Cr films are one of the most suitable candidates for perpendicular magnetic recording media. The facing targets sputtering(FTS) system has a advantage of preparing films over a wide range of working gas pressure on plasma-free substrate. In this study, we investigated the possibility of employing FTS system for depositing Co-Cr films. The Co-Cr thin films were deposited with various sputter gas pressure($P_Ar$, 0.1~10mTorr) by using FTS apparatus at temperature of $40^{\circ}C and 220^{\circ}C$, respectively. Crystallographic and magnetic characteristics were evaluated by x-ray diffractometry (XRD) and vibrating sample magnetometer(VSM), respectively. Under argon gas pressure at 0.1mTorr, films with morphologically dense microstructure, good c-axis orientation and higher coercivity were obtained. It has been confirmed that the FTS system is very useful for preparing Co-Cr thin film recording media.

• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.256-262
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• 1994

$200{\AA}$ thick Co/Pd multilayered thin films were fabricated by sputtering. Two thicknesses of cobalt sublayer, $2{\AA}$ and $4{\AA}$ were chosen and the effects of sputtering pressure on the perpendicular magnetic anisotropy were investigated. It has been found that the optimum pressure for maximum perpendicular magnetic anisotropy(PMA) existed and the pressure for maximum PMA was lower for the multilayer with $2{\AA}$ cobalt layer than that with $4{\AA}$ cobalt thickness. As the sputtering gas presssure increased, domain wall motion with magnetization became difficult and the predominant mode of magnetization reversal changed from domain wall motion to magnetic moment rotation. It turned out that the perpendicular magnetic anisotropy was higher in case of $2{\AA}$ cobalt thickness than $4{\AA}$ cobait thickness.

• Journal of the Korean Magnetics Society
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• v.4 no.1
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• pp.32-38
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• 1994

We have investigated the effects of sputtering Ar gas pressure on magnetic and magneto-optical properties in compositionally modulated Co/Pt superlattice thin films. The samples were prepared by dc magnetron sputtering. Sputtrering Ar gas pressure was varied from 2 to 30 mTorr. The microstructure of the samples was examined by scanning electron microscope and the x-ray diffractometry. The magnetization, the Kerr rotation angle, and the reflectivity of the samples were measured. The columnar structure was developed, and the coercivity was drasti- cally increased, when the sputtering Ar gas pressure was higher than 20 mTorr. We explained that the variation of the magnetization, the Kerr rotation angle, and the reflectivity was related with the microstructure influenced by the variation of the Ar gas pressure.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.440-448
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• 2004

In this paper, to make a solar cell of II-Ⅵ ZnTe compound semiconductor, we studied for the property of the transparent electrode(AZO) and Buffer layer(ZnO), and for reducing the energyband gap of optical absorber layer which are most effective on its efficiency. The ZnTe thin film was used the optical absorber layer of solar cell. Zn and Te were deposited using the co-sputtering method. The thin film was sputtered RF power of Zn/50W and Te/30W, respectively and a substrate temperature of foot under Ar atmosphere of 10mTorr. The energy band gap of the thin film was 1.73ev Then the thin film was annealed at $400^{\circ}C$ for 10sec under a vacuum atmosphere. The energy band gap of 1.67eV was achieved and the film composition ratio of Zn and Te was 32% and 68%. At the best condition, the Solar Cell was manufactured and the efficiency of 6.85% (Voc: 0.69V, Jsc: 21.408㎃/$cm^2$, Fill factor (FF): 0.46) was achieved.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.122-123
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• 2006

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.796-799
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• 2002

BSCCO thin films are fabricated via a co-deposition process at an ultra-low growth rate using ion beam sputtering. The sticking coefficient of Bi element exhibits a characteristic temperature dependence. This temperature dependence of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi$_2$O$_3$.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.195-199
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• 1998

Magnetic and Magneto-Optical properties of Co-based MnSbPt thin films prepared by R.F Sputtering were investigated. In this study, the optimum heat treatment condition was found to be $300^{\circ}C$-4hours under a $5\times10^{-6}$ Torr, but perpendicularly magnetized thin films could not be obtained. Coercive force showed maximum value of about 5000e at $250\AA$ Co thickness but the value is not enough for practical use of the thin film. Heat treated Co-based MnSbPt thin film shows 0.78 degree of Kerr rotation angle for 700nm of incident wavelength.

• Journal of the Korean Electrochemical Society
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• v.10 no.4
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• pp.279-282
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• 2007

When reformer for fuel cell is used, CO in hydrogen gas leads to a seriously decreased membrane electrode assembly (MEA) performance by catalyst poisoning. The effect of CO on performance of modified MEA by sputtering method is studied in this paper. The experimental results show that sputtered Pt and Ru thin film improve a single cell performance of MEA and sputtered metal thin film has a CO tolerance. The air injection process on anode show improved CO tolerance test result. Moreover, Pt, Ru and PtRu thin film by sputtering had influence on the CO tolerance with air injection process.