• Journal of the Korean Electrochemical Society
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• v.6 no.4
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• pp.261-265
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• 2003

The heat treatment process of thin film microbatteries manufacturing processes has several Problems. This study, without heat treatment, considered the characteristics of $LiCoO_2$ thin films deposited by bais sputtering method inducing the structural change of the thin film. The properties of deposited $LiCoO_2$ thin films such as crystal structure, morphology, and discharge capacity were observed by various analysis methods. Among $LiCoO_2$ thin films deposited by substrate bias $voltage(V_b)$, the one deposited by substrate bias voltage of -50V had the highest initial discharge capacity of about $60{\mu}Ah/cm^2{\mu}m.$ We confirmed that $LiCoO_2$ thin film could be used as cathode material of lithium thin film microbatteries without annealing.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.533-537
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• 1999

ATO(Sb doped $SnO_2$) thin films whose thicknesses were 600, 1100 and $2100\AA$ were prepared by DC magnetron sputtering method. They showed the lowest resistivity at DC sputtering power 0.24kW and had lower resistivity with increasing thickness. The power dependence of resistivity among ATO thin films was also different with thickness. The increase of carrier concentration in ATO thin films was responsible for the decrease of resistivity with thickness increase. ATO thin films which were prepared at 30sccm oxygen flow rate showed a great change of sheet resistance under 1M HCl solution. The investigation of SAM(Scanning Auger Microprobe) revealed that oxygen atomic percentage on the surface of ATO thin films was changed. The decrease of sheet resistance also occurred when ATO thin films, prepared at 30sccm oxygen flow rate, were exposed to air for a long period of time. For this reason, it was considered that the desorption of oxygen on ATO surface was accelerated by HCl.

• Progress in Superconductivity
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• v.4 no.2
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• pp.153-156
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• 2003

We have studied fabrication of $MgB_2$ thin film on $SrTiO_3$ (001) and r-cut $A1_2$$O_3$ substrates by rf magnetron sputtering method using and $ MgB_2$ single target and two targets of Mg and B, respectively. Based on P -T phase diagram of $MgB_2$ and vapor pressure curves of Mg and B, a three-step process was employed. B layer was deposited at the bottom to enhance the film adhesion to the substrate. Secondly, co-sputtering of Mg and B was done. Finally, Mg was sputtered on top to compensate fur the loss of Mg during annealing. Subsequently, $MgB_2$ films were in-situ annealed in various conditions. The sample fabricated using the three-step process showed $T_{c}$ of 24 K and formation of superconducting $MgB_2$ phase was confirmed by XRD spectra. In case of co-sputtering deposition, $T_{c}$ depended on annealing time and argon pressure. However, those made by single-target sputtering showed non-superconducting behavior or low transition temperature, at best.est.

• Proceedings of the Korean Magnestics Society Conference
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• 1997.11a
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• pp.22-23
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• 1997

• Proceedings of the Optical Society of Korea Conference
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• 2007.02a
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• pp.15-16
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• 2007

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.190.2-190
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.142-142
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• 2005

• Proceedings of the Korean Magnestics Society Conference
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• 2002.04a
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• pp.72-73
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• 2002

No Abstract, See Full Text

• Journal of Information Display
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• v.12 no.2
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• pp.89-92
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• 2011

Advanced static DC magnetron sputtering methods based on the magnet wobbling technique were investigated to achieve highly uniform and homogeneous metallization layers. The novel split sputter mode (SSM) method, wherein the deposition process is divided into two distinct steps, enables the AKT rotary cathode technology to provide excellent layer properties, while keeping a high production throughput. The effectiveness of theSSMtechnique was demonstrated through copper-coated large-area substrates.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.746-750
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• 2006

NiO films and Ru co-sputtered NiO films were deposited by reactive magnetron sputtering for micro-solid oxide fuel cell anode applications. The deposited films were reduced to form porous films. The reduction kinetics of the Ru doped NiO film was more sluggish than that of the NiO film, and the resulting microstructure of the former exhibited finer pore networks. The possibility of using the films for the anodes of single chamber micro-SOFCs was investigated using an air/fuel mixed environment. It was found that the abrupt increase in the resistance is suppressed in the Ru co-sputtered film, as compared to undoped film.