• 전기화학회지
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• 제6권4호
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• pp.261-265
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• 2003

박막전지의 제조공정 중 열처리 공정은 많은 문제점들을 가지고 있다. 본 연구에서는 열처리 공정 없이 박막의 구조변화를 유발하는 바이어스 스퍼터링(Bias sputtering) 방법으로 $LiCoO_2$ 양극 활물질 박막을 제조하여 그 특성을 고찰하였다. 제조된 박막은 다양한 분석 방법을 이용하여 결정구조, 표면형상, 방전용량을 관찰하였다, 제조된 $LiCoO_2$양극활물질 박막 중 -50 V의 기판 바이어스 전압$(substrate\;bias\;voltage:\;V_b)$을 인가하여 제조된 $LiCoO_2$ 양극 활물질 박막에서 약 $60{\mu}Ah/cm^2{\mu}m.$의 초기 방전 용량을 가짐을 확인하였다. 본 연구는 열처리 공정 없이도 박막전지의 양극활물질로서 $LiCoO_2$ 박막을 사용할 수 있음을 알 수 있었다.

• 한국재료학회지
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• 제9권5호
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• pp.533-537
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• 1999

ATO(Sb doped $SnO_2$) thin films whose thicknesses were 600, 1100 and $2100\AA$ were prepared by DC magnetron sputtering method. They showed the lowest resistivity at DC sputtering power 0.24kW and had lower resistivity with increasing thickness. The power dependence of resistivity among ATO thin films was also different with thickness. The increase of carrier concentration in ATO thin films was responsible for the decrease of resistivity with thickness increase. ATO thin films which were prepared at 30sccm oxygen flow rate showed a great change of sheet resistance under 1M HCl solution. The investigation of SAM(Scanning Auger Microprobe) revealed that oxygen atomic percentage on the surface of ATO thin films was changed. The decrease of sheet resistance also occurred when ATO thin films, prepared at 30sccm oxygen flow rate, were exposed to air for a long period of time. For this reason, it was considered that the desorption of oxygen on ATO surface was accelerated by HCl.

• Progress in Superconductivity
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• 제4권2호
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• pp.153-156
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• 2003

We have studied fabrication of $MgB_2$ thin film on $SrTiO_3$ (001) and r-cut $A1_2$$O_3$ substrates by rf magnetron sputtering method using and $ MgB_2$ single target and two targets of Mg and B, respectively. Based on P -T phase diagram of $MgB_2$ and vapor pressure curves of Mg and B, a three-step process was employed. B layer was deposited at the bottom to enhance the film adhesion to the substrate. Secondly, co-sputtering of Mg and B was done. Finally, Mg was sputtered on top to compensate fur the loss of Mg during annealing. Subsequently, $MgB_2$ films were in-situ annealed in various conditions. The sample fabricated using the three-step process showed $T_{c}$ of 24 K and formation of superconducting $MgB_2$ phase was confirmed by XRD spectra. In case of co-sputtering deposition, $T_{c}$ depended on annealing time and argon pressure. However, those made by single-target sputtering showed non-superconducting behavior or low transition temperature, at best.est.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1997년도 추계연구발표회 논문개요집
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• pp.22-23
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• 1997

• 한국광학회:학술대회논문집
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• 한국광학회 2007년도 동계학술발표회 논문집
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• pp.15-16
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• 2007

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 추계총회,초청강연,특별강연,연구발표회
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• pp.190.2-190
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• 2000

• 한국재료학회:학술대회논문집
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• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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• pp.142-142
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• 2005

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 춘계연구발표회 논문개요집
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• pp.72-73
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• 2002

No Abstract, See Full Text

• Journal of Information Display
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• 제12권2호
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• pp.89-92
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• 2011

Advanced static DC magnetron sputtering methods based on the magnet wobbling technique were investigated to achieve highly uniform and homogeneous metallization layers. The novel split sputter mode (SSM) method, wherein the deposition process is divided into two distinct steps, enables the AKT rotary cathode technology to provide excellent layer properties, while keeping a high production throughput. The effectiveness of theSSMtechnique was demonstrated through copper-coated large-area substrates.

• 한국세라믹학회지
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• 제43권11호
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• pp.746-750
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• 2006

NiO films and Ru co-sputtered NiO films were deposited by reactive magnetron sputtering for micro-solid oxide fuel cell anode applications. The deposited films were reduced to form porous films. The reduction kinetics of the Ru doped NiO film was more sluggish than that of the NiO film, and the resulting microstructure of the former exhibited finer pore networks. The possibility of using the films for the anodes of single chamber micro-SOFCs was investigated using an air/fuel mixed environment. It was found that the abrupt increase in the resistance is suppressed in the Ru co-sputtered film, as compared to undoped film.