• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.142-150
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• 2012

In this Study, Mo back electrode were deposited as the functions of various working pressure, deposition time and plasma per-treatment on sodalime glass (SLG) for application to CIGS thin film solar cell using by DC sputtering method, and were analyzed Mo change to $MoSe_2$ layer through selenization processes. And finally Mo back electrode characteristics were evaluated as application to CIGS device after Al/AZO/ZnO/CdS/CIGS/Mo/SLG fabrication. Mo films fabricated as a function of the working pressure from 1.3 to 4.9mTorr are that physical thickness changed to increase from 1.24 to 1.27 ${\mu}m$ and electrical characteristics of sheet resistance changed to increase from 0.195 to 0.242 ${\Omega}/sq$ as according to the higher working pressure. We could find out that Mo film have more dense in lower working pressure because positive Ar ions have higher energy in lower pressure when ions impact to Mo target, and have dominated (100) columnar structure without working pressure. Also Mo films fabricated as a function of the deposition time are that physical thickness changed to increase from 0.15 to 1.24 ${\mu}m$ and electrical characteristics of sheet resistance changed to decrease from 2.75 to 0.195 ${\Omega}/sq$ as according to the increasing of deposition time. This is reasonable because more thick metal film have better electrical characteristics. We investigated Mo change to $MoSe_2$ layer through selenization processes after Se/Mo/SLG fabrication as a function of the selenization time from 5 to 40 minutes. $MoSe_2$ thickness were changed to increase as according to the increasing of selenization time. We could find out that we have to control $MoSe_2$ thickness to get ohmic contact characteristics as controlling of proper selenization time. And we fabricated and evaluated CIGS thin film solar cell device as Al/AZO/ZnO/CdS/CIGS/Mo/SLG structures depend on Mo thickness 1.2 ${\mu}m$ and 0.6 ${\mu}m$. The efficiency of CIGS device with 0.6 ${\mu}m$ Mo thickness is batter as 9.46% because Na ion of SLG can move to CIGS layer more faster through thin Mo layer. The adhesion characteristics of Mo back electrode on SLG were improved better as plasma pre-treatment on SLG substrate before Mo deposition. And we could expect better efficiency of CIGS thin film solar cell as controlling of Mo thickness and $MoSe_2$ thickness depend on Na effect and selenization time.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.114.1-114.1
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• 2010

A highly performed Pd-based hydrogen membrane has prepared successfully on a modified porous nickel support. The porous nickel support modified by impregnation method of $Al(NO_3)_3{\cdot}9H_2O$ (Aldrich Co.) over the nickel powder showed a strong resistance to hydrogen embrittlement and thermal stability. Plasma surface modification treatment was introduced as a pre-treatment process instead of conventional HCl wet activation. Ceramic barrier was coated on the external surface of the prepared nickel supports to prevent intermetallic diffusion and to enhance the affinity between the support and membrane. Palladium and copper were deposited at thicknesses of $4\mu}m$ and $0.5{\mu}m$, respectively, on a barrier-coated support by DC sputtering process. The permeation measurement was performed in pure hydrogen at $400^{\circ}C$. The single gas permeation of our membrane was two times higher than that of the previous membrane which do not have ceramic barrier.

• Journal of Hydrogen and New Energy
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• v.15 no.4
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• pp.283-290
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• 2004

The single-step process for conversion of syngas to DME give higher conversion than the syngas-to-methanol process. This arises because of a synergy among the three simultaneous reaction, methanol synthesis, methanol dehydration and water gas shift reaction, in the process. we would find the optimal condition of the process which these advantages. The optimal condition of DME synthesis reaction over a commercial $Cu/Zn/Al_2O_3$ catalyst and Hybrid catalyst in a fixed bed reactor. The syngas-to-dimethyl ether conversion was examined on various reaction condition (Temperature 473~553K, $H_2/CO$ ratio 1~3, Pressure 30'50atm, GHSV 1000~4000).

• Proceedings of the Korean Institute of Building Construction Conference
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• 2021.11a
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• pp.107-108
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• 2021

In the global trend of countries around the world announcing the declaration of carbon neutrality, the development of low-carbon cement in the cement industry can be seen as a very important issue that can determine the future development of the cement industry in the future. Therefore, this study evaluated the strength characteristics of limestone cement paste with limestone powder of CaCO3 and refinery desulfurization waste catalyst of high Al₂O₃ content, and using a Minitab mixture design to optimize a limestone cement content. As a resuls it was confirmed that limestone cement paste with 5-10% of limestone powder and 1.25-2.5% of the waste catalyst exhibits similar compressive strength to that of OPC.

• The Journal of Korean Academy of Prosthodontics
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• v.38 no.2
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• pp.178-190
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• 2000

The purpose of this study was to evaluate the surface roughness of Ni-Cr-Be alloy($Verabond^{(R)}$, Aalba Dent Inc., USA) according to electrolyte concentration and etching time. Total of 150 metal specimens ($12{\times}10{\times}1.5mm$) composed of 5 polisded specimens, 5 sandblasted specimens, 140 etched specimens were prepared. Etched groups were divided into 28 groups by the $HClO_4$ concentrations(10, 30, 50, 70%) and etching times(15, 30, 60, 120, 180, 240, 300 seconds). The mean surface roughness(Ra) and the etching depth were measured with Optical 3-dimensional surface roughness measuring machine(Accura 1500M, Intek Engineering Co., Korea) and observed under SEM. The results obtaind were as follows: 1. Surface roughness(Ra) and etching depth were affected by the order of etching time, electrolyte concentration, and their interaction(P<0.05). 2. Surface roughness(Ra) and etching depth were increased with etching time in 10%, 30% electrolyte concentrations, but they had no significant difference with etching time in 70% (P<0.05). 3. Surface roughness(Ra) and etching depth decreased in the order of 30, 10, 50, 70% electrolyte concentrations from 120 seconds etching time(P<0.05). 4. The remarkable morphologic changes in etched surface were observed along the grain boundaries in 15, 30 seconds of 10%, 30% concentrations and the morphologic changes could be denoted in the grains themselves as well as along the boundaries with the lapse of time. Even though the noticeable morphologic changes also took place in etched surface with 50% concentration, the degree of changes were less than that of changes with 10%, 30%. However, there were little morphologic changes with 70% concentration regardless of etching time. 5. Surface roughness(Ra) of sandblasting group with $50{\mu}m\;Al_2O_3$ had no significant difference with 30%-30 seconds etched group(P<0.05).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.251-258
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• 2003

The effects of the salt and the precursor pH on the synthesizing behavior and the morphology of mullite have been studied. Two kinds of mullite precursor sols were prepared by the dissolution of two kinds of salt (aluminum nitrate enneahydrate, Al($NO_3$)$_3$ㆍ$9H_2$O; type I and aluminum sulfate 14∼18 water, (SO$Al_4$)$_3$$\cdot$$14∼18H_2$O; type II) into the mixture of colloidal silica sol, respectively. Precursor pH of the sols was controlled to the acidic (pH= 1.5∼2) and basic (pH= 8.5∼9) conditions. The co-products with nitrate and sulfate were completely eliminated at $500^{\circ}C$ and $850^{\circ}C$, respectively, which was confirmed by TG/DTA results. The synthesizing temperature of mullite phase was found to be above $1200^{\circ}C$ for pH= 1.5∼2 and above $1300^{\circ}C$ for pH= 8.5∼9 in type I. However, in type II, the synthesizing temperature of mullite was decreased to $850^{\circ}C$ for pH= 1.5∼2 and $1100^{\circ}C$ for pH= 8.5∼9. The grain size of the mullite synthesized at pH= 8.5∼9 was larger than that at pH= 1.5∼2 in overall heat-treated temperatures, showing smaller grain size in type II. Aspect ratio of the mullite grains was more increased at pH= 1.5∼2 than pH= 8.5∼9 in type I, showing similar aspect ratio at both pH conditions in type II. It was found that the synthesizing temperature and grain size were predominantly governed by the initial precursor pH and decomposition of the salt, with minor effect on the grain morphology.

• Transactions of the Korean Society of Automotive Engineers
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• v.9 no.3
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• pp.68-75
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• 2001

In this paper, a number of supported metal oxides and perovskite type catalysts were investigated for the NOx reduction from the diesel engine exhaust gas. All catalysts were made into pellets type with diameter of 3-4 mm alumina(Al$_2$O$_3$) as a supporter. These samples were tested by real diesel exhaust gas which contains CO, hydrocarbons and soot in the temperature range of 150~55$0^{\circ}C$ with the $3300h^{-1}$ space velocity (SV). Among the results, several promising catalysts showed NOx conversion above 50% in the temperature range of 150-35$0^{\circ}C$. From these results supported metal oxides catalysts and perovskite type could be recommended for the practical application to the automobile exhaust treatments.

• Journal of the Korea Organic Resources Recycling Association
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• v.22 no.4
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• pp.45-53
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• 2014

This study was conducted to evaluate the effect of developed composted liquid manure(DSCB), which was produced by adding N, P, and K to composted liquid manure(SCB), on the growth of zoysiagrass. Two different N sources used in DSCB were ammonium sulfate(DSCB-A) and urea(DSCB-U), respectively. Fertilizer treatments were designed as follows; non-fertilizer (NF), control (CF; chemical fertilizer), DSCB-Al($200mlm^{-2}$ DSCB-A), DSCB-A2($250mlm^{-2}$ DSCB-A), DSCB-U ($250mlm^{-2}$ DSCB-U) and CF+SCB(CF+$250mlm^{-2}$ SCB). In zoysiagrass, turf color index, chlorophyll index, dry weight and nutrient content were measured. Turf color index and chlorophyll index in DSCB and SCB treatment were increased by 1~3% and 14~28% than those of NF, respectively, and in DSCB-A1, DSCB-A2 and CF+SCB increased by 7~12% than those of CF. As applied with DSCB and SCB, the dry weight of DSCB-A1 and DSCB-A2 was increased by 25% and 19% in than CF, respectively and their nitrogen uptake by 19% and 6%. Evaluated with turf quality and growth, DSCB-A1 was the best and the most efficient in all treatments. These results indicated that application of DSCB-A1 promoted turf quality and growth of zoysiagrass by stimulating a nitrogen uptake, so that it was expected to replace to chemical fertilizers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.6
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• pp.276-281
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• 2021

In order to manufacture a semiconductor circuit, etching, cleaning, and deposition processes are repeated. During these processes, the inside of the processing chamber is exposed to corrosive plasma. Therefore, the coating of the inner wall of the semiconductor equipment with a plasma-resistant material has been attempted to minimize the etching of the coating and particle contaminant generation. In this study, we synthesized yttrium oxyfluoride (YOF) powder by a solid-state reaction using Y₂O₃ and YF₃ as raw materials. Mixing ratio of the Y₂O₃ and YF₃ was varied from 1.0:1.0 to 1.0:1.6. Effects of the mixing ratio on crystal structure and microstructure of the synthesized YOF powder were investigated using XRD and FE-SEM. The synthesized YOF powder was successfully applied to plasma spray coating process on Al substrate.