• 한국자기학회지
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• 제4권3호
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• pp.244-248
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• 1994

NdTbFeCo 합금막 및 NdTbFeCo/TbFeCo 이층막에 대한 자기광학 Kerr 회전각(${\theta}_{k}$)의 파장의존성 및 자기적 특성을 조사하였다. FeCo의 조성을 일정하게 유지하고 NdTbFeCo 합금막에서 Tb의 일부를 Nd로 치환한 결과, Nd 조성이 증가할 수록 400 nm의 파장영역에서 ${\theta}_{k}$는 증대되었으나, 보자력과 각형비가 급격히 감소하였다. NdTbFeCo 막이 단파장에서 큰 ${\theta}_{k}$를 나타냄에도 불구하고 보자력이 작아 단파장용 광자기기록 매체로서 응용가능성이 희박할 것으로 생각되어, 보자력이 큰 TbFeCo 막과 교환결합 이층막을 제작하였다. 제작된 시료중 $Nd_{16.9}Tb_{15.2}Fe_{50.4}Co_{17.5}(150\;{\AA})/Tb_{21.1}Fe_{65.0}Co_{13.9}(300\;{\AA})$ 교환결합 이층막이 6.0 KOe의 보자력과 500 nm에서 $0.32^{\circ}$의 ${\theta}_{k}$를 나타내었다.

• 한국세라믹학회지
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• 제53권3호
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• pp.338-342
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• 2016

ZnO thin film co-doped with F and Al was prepared on a glass substrate via simple non-alkoxide sol-gel spin coating. For a fixed F concentration, the addition of Al co-dopant was shown to reduce the resistivity mainly due to an increase in electrical carrier density compared with ZnO doped with F only, especially after the second post-heat-treatment in a reducing environment. There was no effective positive contribution to the reduction in resistivity due to the mobility enhancement by the addition of Al co-dopant. Optical transmittance of the ZnO thin film co-doped with F and Al in the visible light domain was shown to be higher than that of the ZnO thin film doped with F only.

• Corrosion Science and Technology
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• 제7권1호
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• pp.22-26
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• 2008

Formation of protective iron carbonate films in $CO_2$ corrosion can reduce corrosion rate substantially and the effects have been incorporated in various prediction models. The $CO_2$ corrosion with the presence of free acetic acid is known to increase corrosion rate below scaling temperature. The possible interaction between the formation of iron acetate and iron carbonate films can affect the protectiveness of the film. The study is done using 3% NaCl solution under stagnant $CO_2$ -saturated condition at the scaling temperatures at various pH values and HAC concentrations. The result show that the presence of HAc does not affect the formation of protective iron carbonate film but delays the attainment of protective iron carbonate due to a possibility of solubilising of ferrous ions and thinning of the films.

• 한국수소및신에너지학회논문집
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• 제25권3호
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• pp.305-310
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• 2014

This study examined the morphological changes in lithium surface immersed in 1mol $dm^{-3}$ (M) $LiPF_6 $ dissolved in propylene carbonate (PC) containing different 1,2-dimethoxyethane (DME) concentrations as a co-solvent. A passivation film was formed on the surface of lithium metal by electrolyte decomposition. The passivation film formation reactions were significantly affected by the amount of co-solvent, DME, in electrolyte solution. A stable film was obtained from the 1 M $LiPF_6 $ / PC:DME (67:33) solution in which lithium electrode showed good electrochemical performances. Atomic force microscope (AFM) and electrochemical impedance spectroscopy (EIS) results revealed that there were no direct correlations between changes in the surface morphology of lithium metal and the resistance behavior of its passivation film.

• 한국자기학회지
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• 제13권5호
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• pp.198-203
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• 2003

경자성박막을 이용한 자기임피던스센서의 바이어스 자계 인가의 유용성을 알아보기 위해서, SmCo 경자성박막의 조성에 따른 자기적 특성과 이 박막이 아몰퍼스 CoZrNb 연자성박막에 미치는 바이어스 효과에 대하여 조사하였다. 아몰퍼스상을 가지는 SmCo 경자성박막의 포화자화는 Sm 조성이 증가함에 따라 감소하였으며, 보자력은 Sm 조성의 증가에 따라 증가하다가 28 at% 부근에서 약 500 Oe를 나타낸 후 다시 감소하였다. SmCo 박막에 의해서 발생된 바이어스 자계가 CoZrNb 박막에 미치는 효과는 자화곡선과 투자율의 측정, 그리고 자구관찰을 통하여 조사되었다. MI센서로 사용이 가능한 3${\times}$0.5 $\textrm{mm}^2$ 크기의 박막시료에 있어서, 약 60 Oe의 바이어스 자계가 얻어졌으며, 센서의 감도를 최적화하기에 충분한 바이어스 자계를 경자성박막을 이용하여 발생시킬 수 있음을 입증하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.333-336
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• 2006

High Pressure Annealing System was developed to improve the characteristics of low-temperature poly-silicon thin film transistors.. (TFTs). The high-pressure steam annealing was applied to the poly-silicon film made by rapid thermal annealing method. The carrier lifetime was investigated by Microwave detection of the Photo-Conductive Decay and the increase of carrier lifetime which indicates the reduction of the defect was observed by high-pressure steam annealing of 1MPa 600C 1hour.

• 센서학회지
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• 제1권2호
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• pp.117-123
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• 1992

적층구조의 Pt-Sn 박막을 히터 위에서 열산화하여 $Pt-SnO_{2-x}$ 박막형 CO 가스감지소자를 제조하였다. 열증착법으로 증착된 Sn의 두께는 $4000{\AA}$이었으며 그 위에 D.C. sputtering법으로 증착된 Pt의 두께는 $14{\AA}{\sim}71{\AA}$ 이었다. XRD 분석에서 $Pt-SnO_{2-x}$ 박막은 $200{\AA}$ 정도의 입경과 주방향성이 (110)인 $(SnO_{2}){\cdot}6T$ 결정상을 보였다. $Pt-SnO_{2-x}$ 박막소자(Pt 두께 : $43{\AA}$)는 6000 ppm의 CO에 대해 80% 정도의 감도와 CO에 대해 높은 선택도를 나타내었다. 그리고 CO에 고감도를 갖는 $Pt-SnO_{2-x}$ 박막소자의 열산화 온도와 동작온도가 각각 $500^{\circ}C$와 $200^{\circ}C$이었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.700-702
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• 2005

A 5.0-inch transmissive type plastic TFT arrays were successfully fabricated on a plastic substrate at the resolution of $400{\times}3{\times}300$ lines (100ppi). All of the TFT processes were carried out below $150^{\circ}C$ on PES plastic films. After thin film deposition using PECVD, thin film failures such as film delamination and cracking often occurred. For successful growth of thin films (about 1um) without their failures, it is necessary to solve the critical problem related to the internal compressive stress (some GPa) leading to delamination at a threshold thickness value of the films. The Griffith's theory explains the failure process by looking at the excess of elastic energy inside the film, which overcomes the cohesive energy between film and substrate. To increase the above mentioned threshold thickness value there are two possibilities: (i) the improvement of the interface adhesion (for example, through surface micro-roughening and/or surface activation), and (ii) the reduction of the internal stress. In this work, reducing a-Si layer film thickness and optimizing a barrier SiNx layer have produced stable CVD films at 150oC, over PES substrates

• 전기학회논문지
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• 제59권7호
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• pp.1255-1258
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• 2010

In this paper, the $CoSi_2$ thin films with thicknesses of about $5{\mu}m$ were deposited on n-type silicon (111) substrates by RF magnetron sputtering method using a $CoSi_2$ target (99.99%). The flow rate of argon of 50 sccm, substrate temperature of $100^{\circ}C$, RF power of 60 watts, deposition time of 30 minutes, and the vacuum of $1\times10^{-6}$ Torr. The annealing treatments of the $CoSi_2$ thin film were performed from 500, 700 and $900^{\circ}C$ for 1h in air ambient by an electric furnace. In order to investigate the $CoSi_2$ thin film X-ray diffraction patterns were measured using the X-ray diffractometer (XRD). The structure of the thin films were investigated by using scanning the electron microscope (SEM) were used for review. The surface morphology of the thin films was measured with a atomic force microscopy (AFM). Temperature dependence of sheet resistivity and property of Hall effect was measured in the $CoSi_2$ thin film.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.381.1-381.1
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• 2014

In this study, we investigated the deposition behavior and the etch resistivity of plasma polymerized carbon hardmask (ppCHM) film with the variation of process temperature. The etch resistivity of deposited ppCHM film was analyzed by thickness measurement before and after direct contact reactive ion etching process. The physical and chemical properties of films were characterized on the Fourier transform infrared (FT-IR) spectroscope, Raman spectroscope, stress gauge, and ellipsometry. The deposition behavior of ppCHM process with the variation of temperature was correlated refractive index (n), extinction coefficient (k), intrinsic stress (MPa), and deposition rate (A/s) with the hydrocarbon concentration, graphite (G) and disordered (D) peak by analyzing the Raman and FT-IR spectrum. From this experiment we knew an optimal deposition condition for structure of carbon hardmask with the higher etch selectivity to oxide. It was shown the density of ppCHM film had 1.6~1.9 g/cm3 and its refractive index was 1.8~1.9 at process temperature, $300{\sim}600^{\circ}C$. The etch selectivity of ppCHM film was shown about 1:4~1:8 to undoped siliconoxide (USG) film (etch rate, 1300 A/min).