• Title/Summary/Keyword: Co deposition

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Synthesis of aligned and length-controlled carbon nanotubes by chemical vapor deposition

  • Park, Young Soo;Moon, Hyung Suk;Huh, Mongyoung;Kim, Byung-Joo;Kuk, Yun Su;Kang, Sin Jae;Lee, Seong Hee;An, Kay Hyeok
    • Carbon letters
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    • v.14 no.2
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    • pp.99-104
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    • 2013
  • We investigated the effects of parametric synthesis conditions of catalysts such as sintering temperature, sorts of supports and compositions of catalysts on alignment and length-control of carbon nanotubes (CNTs) using catalyst powders. To obtain aligned CNTs, several parameters were changed such as amount of citric acid, calcination temperature of catalysts, and the sorts of supports using the combustion method as well as to prepare catalyst. CNTs with different lengths were synthesized as portions of molybdenum and iron using a chemical vapor deposition reactor. In this work, the mechanisms of alignment of CNTs and of the length-control of CNTs are discussed.

Microstructural and Mechanical Characterization of Nanocomposite Ti-Al-Si-N Films Prepared by a Hybrid Deposition System (하이브리드 증착 시스템에 의해 합성된 나노복합체 Ti-Al-Si-N 박막의 미세구조와 기계적 특성)

  • 박인욱;최성룡;김광호
    • Journal of Surface Science and Engineering
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    • v.36 no.2
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    • pp.109-115
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    • 2003
  • Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti, Al, Si)N crystallites and amorphous Si3N4 by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film haying the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of nc-(Ti,Al,Si) N/a$-Si_3$$N_4$.

Gap-Fill Characteristics and Film Properties of DMDMOS Fabricated by an F-CVD System

  • Lee, Woojin;Fukazawa, Atsuki;Choa, Yong-Ho
    • Korean Journal of Materials Research
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    • v.26 no.9
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    • pp.455-459
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    • 2016
  • The deposition process for the gap-filling of sub-micrometer trenches using DMDMOS, $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by flowable chemical vapor deposition (F-CVD) is presented. We obtained low-k films that possess superior gap-filling properties on trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on IMD and STI for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universal in other chemical vapor deposition systems.

Influence of Parameters on Adhesion Strength on TiN Film by using R.F. Plasma Assisted Chemical Vapor Deposition (PACVD로 증착된 TiN 박막의 밀착성에 관하여)

  • Shin, Y.S.;Kim, M.I.
    • Journal of the Korean Society for Heat Treatment
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    • v.3 no.1
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    • pp.17-24
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    • 1990
  • In this study, TiN film was deposited onto steel by R.F.-PACVD in order to investigate the influence of parameters on the adhesion strength between film and substrate. Experimental results showed that adhesion strength by SAT is different from by optical microscopy. Adhesion strength is increased when the deposition temperature increases and is influenced by R.F. power and electrode distance. Especially heat treatment on the substrate has influenced over the adhesion strength, so it showed the 22 Newtons in adhesion strength by SAT and adhesion strength is decreased when deposition thickeness is thick and hardness is high. Also if the film is thick and high hardness simultaneous, the film was delaminated seriously.

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Dielectric Properties of the (Ba, Sr)$TiO_3$ Thin Films with deposition time (증착시간에 따른 (Ba, Sr)$TiO_3$ 박막의 유전특성)

  • Lee, Sang-Chul;Lim, Sung-Soo;Lee, Sung-Gap;Chung, Jang-Ho;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 1999.11d
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    • pp.845-847
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    • 1999
  • (Ba, Sr)$TiO_3$[BST] thin films were fabricated on Pt/$TiO_2/SiO_2$/Si substrate by RF sputtering. The structural and dielectric properties of the BST thin films were investigated with the deposition time. Increasing the deposition time from 20 min. to 60 min., second phases were decreased, and EST (111), (100), (200) peaks were increased. The relative dielectric constant and dielectric loss of the EST thin films with the thickness of 3000$\AA$ were 300 and 0.018, respectively at 1[kHz]. The relative dielectric constants was decreased and dielectric losses was increased as increasing the frequency.

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Mercury Exchange Flux from Two Different Soil Types and Affecting Parameters

  • Park, Sang-Young;Kim, Pyung-Rea;Han, Young-Ji
    • Asian Journal of Atmospheric Environment
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    • v.7 no.4
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    • pp.199-208
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    • 2013
  • Mercury exchange fluxes between atmosphere and soil surface were measured in two different types of soils; lawn soil (LS) and forest soil (FS). Average Hg emission from LS was higher than from FS although the soil Hg content was more than 2 times higher in forest soil. In LS, Hg emissions were much greater in warm season than in cold season; however, deposition was dominant in FS during warm season because of leafy trees blocking the solar radiation reaching on the soil surface. In both LS and FS, Hg fluxes showed significantly positive correlations with UV radiation and soil surface temperature during cold season. In addition, it was observed that emission showed positive correlation with UV radiation and soil temperature while there was negative relationship between deposition and UV radiation.

PECVD of Blanket $TiSi_2$ on Oxide Patterned Wafers (산화막 패턴 웨이퍼 위에 플라즈마 화학증착법을 이용한 균일 $TiSi_2$ 박막형성에 관한 연구)

  • Lee, Jaegab
    • Journal of the Korean Vacuum Society
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    • v.1 no.1
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    • pp.153-161
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    • 1992
  • A plasma has been used in a high vaccum, cold wall reactor for low temperature deposition of C54 TiSi2 and for in-situ surface cleaning prior to silicide deposition. SiH4 and TiCl4 were used as the silicon and titanium sources, respectively. The deposited films had low resistivities in the range of 15~25 uohm-cm. The investigation of the experimental variables' effects on the growth of silicide and its concomitant silicon consumption revealed that and were the dominant species for silicide formation and the primary factors in silicon consumption were gas composition ratio and temperature. Increasing silane flow rate from 6 to 9 sccm decreased silicon consumption from 1500 A/min to less than 30 A/min. Furthermore, decreasing the temperature from 650 to $590^{\circ}C$ achieved blanket silicide deposition with no silicon consumption. A kinetic model of silicon consumption is proposed to understand the fundamental mechanism responsible for the dependence of silicon consumption on SiH4 flow rate.

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The Effect of Titanium Interlayer on the Adhesion Properties of TiN Coating (Titanium Interlayer가 TiN 박막의 밀착특성에 미치는 영향)

  • Kong, S.H.;Kim, H.W.;Shin, Y.S.;Kim, M.I.
    • Journal of the Korean Society for Heat Treatment
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    • v.5 no.1
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    • pp.1-12
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    • 1992
  • In order to improve adhesive force of TiN film, we sputtered titanium as interlayer before TiN deposition by Plasma Enhanced Chemical Vapour Deposition. We observed changes of hardness and adhesion at a various thickness of titanium interlayer and also examined analysis. At the critical thickness of the titanium interlayer(about $0.2{\mu}$), adhesive force of TiN films were promoted mostly. But over the critical thickness, a marked reduction of adhesive force was showed, because of the internal stress of titanium interlayer. From AES analysis, the adhesion improvement of TiN films was mainly caused by nitrogen diffusion into titanium interlayer during TiN deposition process which relieved stress concentration at TiN coating-substrate interface.

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A Study on Electroless Ni-B Plating with DMAB as Reducing Agent. I. The Electrochemical Behavior of Precipitation Reaction on Austenite Stainless Steel Substrates (DMAB를 사용한 무전해 Ni-B 합금 도금 I. 오스테나이트 스텐레스강 상의 석출반응에 대한 전기화학적 거동)

  • 이창래;박해덕;강성군
    • Journal of Surface Science and Engineering
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    • v.32 no.2
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    • pp.172-181
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    • 1999
  • The effect of the DMAB concentration, temperature, deposition time, and stabilizer concentration on the precipitation reaction of the electroless nickel plating using dimethylamine borane (DMAB) as reducing agent was investigated to by the weight gain and electrochemical method. The deposition rate was dependent with DMAB concentration. The polarization resistance of the precipitation reaction was reduced with DMAB concentration. The precipitation reaction rate of Ni-B deposits was controlled by the oxidation rate of DMAB as the source of electron. The boron content of the deposit was constant at about 5.5wt%, even when DMAB concentration in the solution was increased. The effect of temperature and stabilizer ($Pb(NO_3)_2$) concentration on deposition rate was shown to have co-dependent behaviors.

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Simultaneous Co-deposition of Zn-Mg Alloy Layers on Steel Strip by PVD Process

  • Kim, Tae-Yeob;Goodenough, Mark
    • Corrosion Science and Technology
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    • v.10 no.6
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    • pp.194-198
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    • 2011
  • This is the first release of an interim report on the development of coating technology of Zn-Mg alloy layers on steel strip by EML-PVD (electromagnetic levitation - physical vapor deposition) process in an air-to-air type continuous PVD pilot plant. It intends to introduce a basic principle of the EML-PVD process together with the high speed PVD pilot plant built in Posco. Due to the agitation effect provided by the high frequency induction coil, simultaneous evaporation of Zn and Mg from a droplet could produce alloy coating layers with Mg content of 6% to 12% depending on the composition of the droplet inside the coil. For its superior corrosion resistance, Zn-Mg alloy coated steel would be a very promising material for automotive, electrical appliances, and construction applications.