• Bulletin of the Korean Chemical Society
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• v.23 no.11
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• pp.1519-1523
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• 2002

A procedure for preparing semiconductor/metal nanowire arrays is described, based on a template method which entails electrochemical deposition into nanometer-wide parallel pores of anodic aluminum oxide films on aluminum. Aligned CdS/Co heterostructured nanowires have been prepared by ac electrodeposition in the anodic aluminum oxide templates. By varying the preparation conditions, a variety of CdS/Co nanowire arrays were fabricated, whose dimensional properties could be adjusted.

• Korean Journal of Animal Reproduction
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• v.24 no.4
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• pp.339-341
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• 2000

In mammals, fatty acid utilization is initiated by activation of fatty acid, catalyzed by acyl-CoA synthetase(ACS, EC6.2.1.3). This enzyme reaction is essential in fatty acid metabolism, since mammalian fatty acid synthetase contains a specific thioesterase to produce fatty acid as th $\varepsilon$ final reaction product. Acyl-CoA, the product of ACS, is utilized in various metabolic pathways including membrane biogenesis, energy production and fat deposition. (omitted)

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1046-1049
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• 2005

We have developed polymer LED displays using ink jet printing without visible swathe marks which can be observed during display operation. In addition, we have also developed a single-pass printing technology for hole-conduction layer deposition to significantly reduce the complexity of interlacing printing across the panel which is known as an alternative to remove the swathe mark.

• Journal of Welding and Joining
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• v.28 no.2
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• pp.32-38
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• 2010

In shipbuilding industry, welding position are usually flat and vertical position at the erection stage. Application of SAW and EGW for these positions makes it possible to achieve enhanced productivity and high quality. But owing to their large size and weight it is difficult to apply these techniques in short and narrow regions. To overcome this problem, our company developed light weight and compact size 4-axis welding carriage which perform 3D weaving. The purpose of this study is to explain the development and application of intelligent welding carriage using 3D weaving pattern that can fill a large amount of welds and thereby making it possible to achieve high quality of welding. This study shows 3D weaving pattern, development of weaving database, and skill of adaptive control response for the variable gap. Also, it shows the results of procedure qualification test for the AH-grade steel when applied to the intelligent welding carriage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.195-201
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• 2024

The low-temperature deposition of BaNi_(2-x)Co_xFe₁₆O₂₇ thin films with a Ba hexaferrite structure for electromagnetic shielding was studied. The BaNi_(2-x)Co_xFe₁₆O₂₇ thin films produced through the spin spray process were suitable for thin film deposition on a flexible substrate because it crystallized well at low temperature below 90℃. The change in shielding characteristics depending on the Co content of the BaNi_(2-x)Co_xFe₁₆O₂₇ thin film was investigated, and excellent shielding characteristics with S21 of -1 dB were obtained in a wide frequency range of 26~40 GHz when the Co content was 0.4 or more. The purpose of this study is to analyze changes in shielding properties caused by change in Co content in relation to phase changes in BaNi_(2-x)Co_xFe₁₆O₂₇ and obtain basic data for developing excellent flexible electromagnetic wave shielding materials.

• Korean Journal of Materials Research
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• v.8 no.2
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• pp.165-172
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• 1998

Epitaxial ultrathin films of $CoSi_2$ and double heteroepitaxial structure of Si/$CoSi_2$/Si(lll) were prepared on Si(111)-$7\times{7}$ substrate by in situ solid-phase epitaxy in a ultrahigh vacuum(LHV). The phase, chemical composition, crystallinity, and the microsructure of the Si/$CoSi_2$/Si(lll) interface were investigated by 2-MeV $^4He^{++}$ ion backscattering spectrometry, X-ray diffraction, and high-resolution transmission electron microscopy. The growth mode of the Co film was the Stransky-Krastanov type with texture when the substrate temperature was room temperature. A-type $CoSi_2$ ultrathin film was grown by deposition of about 50A Co on Si(ll1)-$7\times{7}$ substrate followed by in situ annealing at $700^{\circ}C$ for 10 min. The matching face relationships were $CoSi_2$[110]//Si[110] and $CoSi_2$(002)//Si(002) with no misorientation angle. The A-type $CoSi_2$/Si(lll) interface was abrupt and coherent. The best epi-Si/epi-$CoSi_2$2(A-type)/Si(lll) structure was obtained by deposition of Si film on the CoSii at $500^{\circ}C$ followed by in situ annealing at $700^{\circ}C$ for 10 min in UHV.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.68-69
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.18-18
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• 1993

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.43.2-43
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.166-166
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• 2003

Si (100) 기판위에서 에피텍셜하게 자란 CoSi$_2$층은 우수한 열적안정성, 낮은 junction leakage, ultra-Shallow junction형성 등의 장점으로 인하여 많은 주목을 받아왔다. 그래서 에피텍셜 CoSi$_2$층을 형성하기 위한 많은 방법들이 보고되어 왔다. 그 방법으로는 Ti나 TiN층을 이용한 interlayer mediated epitaxy, Co의 제한적 공급을 통한 molecular beam epitaxy와 molecular beam allotaxy, 그리고 금속유기소스를 이용한 반응성화학기상증착법등이 있다. 하지만 이 방법들은 복잡한 증착공정과 열처리 후 잔류층 제거의 어려움등을 가지고 있다. 본 연구는 일반적으로 사용되는 Ti나 oxide의 중간층없이 에피층을 형성시키는 새로운 방법으로 CO-O-N 박막으로부터 열처리에 의해 확산된 Co로부터 CoSi$_2$에피층을 형성시켰다.