• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1574-1576
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• 2003

Carbon nanotubes (CNTs) were grown on the TiN-coated silicon substrate with different thickness of Ni and Co catalysts layer at $600^{\circ}C$ using inductively coupled plasma-chemical vapor deposition (ICP-CVD). The Ni and Co catalysts were formed using the RF magnetron sputtering system with various deposition times. It was found that the growth of CNTs was strongly influenced by the surface morphology of Ni and Co catalysts. With increasing deposition time, the thickness of catalysts increased and the grain boundary size of catalysts increased. The surface morphology of catalysts and CNTs were elucidated by SEM. The Raman spectrum further confirmed the graphitic structure of the CNTs. The turn-on field of CNTs grown on Ni and Co catalysts was about 2.7V/pm and 1.9V/pm respectively. Field emission current density of CNTs grown on Ni and Co catalysts was measured as $11.67mA/cm^2$ at $5.5V/{\mu}m$ and $1.5mA/cm^2$ at $5.5V/{\mu}m$ respectively.

• 대한기계학회논문집B
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• 제26권9호
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• pp.1226-1233
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• 2002

The purpose of the present study was to examine some basic aspects of laser chemical vapor deposition that will be ultimately utilized for solid freeform fabrication of three dimensional objects. Specifically, deposition of silicon carbide (SiC) using tetramethylsilane (TMS) as precursor was studied for a rod grown by $CO_2$laser-assisted chemical vapor deposition. First, temperature distribution for substrate was analyzed to select proper substrate where temperature was high enough for SiC to be deposited. Then, calculations of chemical equilibrium and heat and mass flow with chemical reactions were performed to predict deposition rates, deposit profiles, and deposit components. Finally, several rods were experimentally grown with varying chamber pressure and compared with the theoretical results.

• 한국결정성장학회지
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• 제30권2호
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• pp.61-65
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• 2020

The depletion of fossil fuels and the increase in environmental awareness have led to greater interest in renewable energy. In particular, solar cells have attracted attention because they can convert an infinite amount of solar energy into electricity. Dye-sensitize solar cells (DSSCs) are low cost third generation solar cells that can be manufactured using environmentally friendly materials. However, DSSC photoelectrodes are generally produced by screen printing, which requires high temperature heat treatment, and low temperature processes that can be used to produce flexible DSSCs are limited. To overcome these temperature limitations, this study fabricated photoelectrodes using room-temperature aerosol deposition. The resulting DSSCs had an energy conversion efficiency of 4.07 %. This shows that it is possible to produce DSSCs and flexible devices using room-temperature processes.

• 한국전기전자재료학회논문지
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• 제14권7호
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• pp.584-589
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• 2001

Diamond thin films were synthesized on WC-Co substrate by RF PACVD(radio frequency plasma-assisted chemical vapor deposition) technique with H$_2$-CH$_4$-O$_2$ gas mixture. WC-Co substrate was pre-treated in HNO$_3$solution, scratched with 3$\mu\textrm{m}$ diamond paste and exposed in the O$_2$ plasma before deposition. The diamond thin film prepared at 11% oxygen concentration showed the best quality of good adhesion and wear resistance at various oxygen concentration with the fixed 5% CH$_4$ concentration.

• 한국재료학회지
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• 제4권7호
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• pp.767-774
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• 1994

The TbFeCo thin films were prepared by the magnetron sputtering system to investigate the effect of the base pressure, film thickness and pre sputtering on the oxidation of the films by analyzing the change of matneto optical properties and by AES depth profile. The films prepared by the facing targets sputtering system represented almost constant magneto optical properties independent of the base pressure resulting from the short flight distance of the sputtered particles. Also, the thin TbFeCo films represented better perpendicular anisotropy as the films thickness increased with pre sputtering. However, it was still needed a deposition rate higher than a certain critical deposition rate to obtain a perfect perpendicular anisotropy even at a very high film thickness.

• 한국자기학회지
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• 제5권5호
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• pp.655-658
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• 1995

Magnetization behavior of sputter-deposited Co/Pd multilayers were characterized, and it has been found that even when the multilayers are sputtered at low pressure (10 mTorr), the coercivity of the multilayers can be increased to large extent without noticeable change of saturation magnetization by increasing the deposition pressure of Pd underlayer. It turned out that the surface topology of Pd underlayer gets rough as deposition pressure increases, which consequently affects the magnetization reversal mode of Co/Pd multilayers from domain wall motion to magnetic spin rotation. The enhancement of coercivity is attributed to the domain wall pinning effect which is comected with the surface roughness of Pd underlayer on which Co/Pd multilayers grow.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.109.2-109.2
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• 2015

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties such as high carrier mobility, chemical stability, and optical transparency. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which need transfer to desired substrates for various applications. However, the transfer steps inevitably induce defects, impurities, wrinkles, and cracks of graphene. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer, which does not require separately deposited catalytic nickel and carbon source layers. The 100 nm NiC layer was deposited on the top of $SiO_2/Si$ substrates by nickel and carbon co-deposition. When the sample was annealed at $1000^{\circ}C$, the carbon atoms diffused through the NiC layer and deposited on both sides of the layer to form graphene upon cooling. The remained NiC layer was removed by using nickel etchant, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. Raman spectroscopy was carried out to confirm the quality of resulted graphene layer. Raman spectra revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Furthermore, the Raman analysis results also demonstrated that gas flow ratio (Ar : $CH_4$) during the NiC deposition and annealing temperature significantly influence not only the number of graphene layers but also structural defects. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• Transactions on Electrical and Electronic Materials
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• 제7권3호
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• pp.149-153
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• 2006

An attempting to produce a p-type diluted magnetic semiconductor (DMS) using $Ti_{1-x}Co_xO_{2-\delta}-based$ thin films was made by suitable control of the deposition parameters including deposition temperature, deposition pressure, and doping level using a pulsed laser deposition method. T$Ti_{0.97}Co_{0.03}O_{2-\delta}-based$ (TCO) films deposited at $500^{\circ}C$ at a pressure of $5\times10^{-6}$ Torr showed an anomalous Hall effect with p-type characteristics. On the other hand, films deposited at $700^{\circ}C$ at $5\times10^{-6}$ Torr showed n-type behaviors by a decreased solubility of cobalt. The charge carrier concentration in the p-type TCO films was approximately $7.9\times10^{22}/cm^3$ at 300 K and the anomalous Hall effect in the p-type TCO films was controlled by a side-jump scattering mechanism. The magnetoresistance (MR), measured at 5 K in p-type TCO films showed a positive behavior in an applied magnetic field and the MR ratio was approximately 3.5 %. The successful preparation of p-type DMS using the TCO films has the potential for use in magnetic tunneling junction devices.

• 대한금속재료학회지
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• 제46권10호
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• pp.683-690
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• 2008

In order to develop transparent electrodes for high efficiency GaN-based light emitting diodes (LEDs), the electrical and optical properties of the electron beam evaporated ITO contacts have been investigated as a function of the deposition temperature and flow rate of oxygen during the deposition. As the deposition temperature increases from $140^{\circ}C$ to $220^{\circ}C$, the resistivity of the ITO films decreases slightly from $4.0{\times}10^{-4}{\Omega}cm$ to $3.3{\times}10^{-4}{\Omega}cm$, meanwhile the transmittance of the ITO films significantly increases from 67% to 88% at the wavelength of 470 nm. When the flow rate of oxygen during the deposition increases from 2 sccm to 4 sccm, the resistivity of the ITO films increases from $3.6{\times}10^{-4}{\Omega}cm$ to $7.4{\times}10^{-4}{\Omega}cm$, meanwhile the transmittance of the ITO films increases from 86% to 99% at 470 nm. Blue LEDs fabricated with the electron beam evaporated ITO electrode show that the ITO films deposited at $200^{\circ}C$ and 3 sccm of the oxygen flow rate give a low forward-bias voltage of 3.55 V at injection current of 20 mA with a highest output power.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.267-267
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• 2010

The structural and electrical properties of microcrystalline silicon films were investigated by hot wire chemical vapor deposition(HWCVD) often called catalytic chemical vapor deposition(Cat-CVD). The Si microcrystalline phase is easily controlled by changing the rate of the silane concentration of $SiH_4$ to $H_2$ during deposition. The Structural property was observed by Raman and SEM. Photo-conductivity and dark conductivity, and photo-sensitivity were observed by Sunsimulator (AM 1.5 illumination). The film color was changed by the variation of silane concentration. HWCVD is useful for the formation of Si thin films for solar cell and needs further commercialized development for mass production.