• Korean Journal of Materials Research
• /
• v.4 no.1
• /
• pp.81-89
• /
• 1994

Ti film of lOnm thickness and Co film of 18nm thickness were sequentially e-heam evaporated onto Si (100) substrates. Metal deposited samples were rapidly thermal-annt.aled(KTA) in thr N1 en vironment a t $900^{\circ}C$ for 20 sec. to induce the reversal of metal bilayer, so that $CoSi_{2}$ thin films could be formed. The sheet resistance measured by the 4-point probe was 3.9 $\Omega /\square$This valur was maintained with increase in annealing time upto 150 seconds, showing high thermal stab~lity. Thc XRII spectra idrn tified the silicide film formed on the Si substrate as a $CoSi_{2}$ epitaxial layer. The SKM microgr;iphs showed smooth surface, and the cross-sectional TKM pictures revealed that the layer formed on the Si substrate were composed of two Co-Ti-Si alloy layers and 70nm thick $CoSi_{2}$ epl-layer. The AES analysis indicated that the native oxide on Si subs~rate was removed by TI ar the beginning of the RTA, and Ihcn that Co diffused to clean surface of Si substrate so that epitaxial $CoSi_{2}$ film could bt, formed. In thc rasp of KTA at $700^{\circ}C$. 20sec. followed by $900^{\circ}C$, 20sec., the thin film showed lower sheet resistance, but rough surface and interface owing to $CoSi_{2}$ crystal growth. The application scheme of this $CoSi_{2}$ epilayer to VLSI devices and the thermodynarnic/kinetic mechan~sms of the $CoSi_{2}$ epi-layer formation through the reversal of Co/Ti bdayer were discussed.

• Applied Microscopy
• /
• v.30 no.3
• /
• pp.249-254
• /
• 2000

We investigated the microstructure, electrical property, and magnetic property of Co/Al multilayer after annealing treatment. CoAl was formed during depositing Co/Al multilayer due to the interfacial reaction. After annealing treatment, $Co_2Si$ was formed at the Co/Si interface. The sheet resistance of Co 2 nm/Al 2 nm multilayer have the lowest value and the Rs of multilayer decreased with the increase of annealing temperature due to the formation of $Co_2Si$ phase. The Ms of 2 nm Co/2 nm Al multilayer have the lowest value and the Ms of multilayer increased with the increase of film thickness.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.60.2-60.2
• /
• 2010

본 연구는 상온 상압하에서 미세구조 패턴을 갖는 대용량의 CaCO3 박막을 제조하고 여러 가지 첨가제를 이용하여 박막 표면의 형상제어를 수행하였다. 또한 형상 제어된 CaCO3 박막을 템플릿으로 이용하여 고분자 및 금속 박막 형상 제어 연구를 수행하였다. 본 연구를 통해 개발된 LACS(Large Area CaCO3 Stamping)법을 통해 흡착능과 소수성의 특성과 같은 다양한 기능성을 갖는 박막의 제조가 가능하였다. 기존의 박막제조 기술은 주로 저압조건에서 이루어지기 때문에 대면적화가 어렵고 형상을 제어 하는데 여러 가지 단점이 있었던 반면 LACS는 에너지의 소모가 적고 다양한 형상제어를 통해 기존의 박막제조 기술의 단점을 보완할 수 있을 것으로 판단된다.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2002.12a
• /
• pp.196-197
• /
• 2002

보편적으로 알려진 CoCr합금 수직기록매체의 경우, 기록매체에서 출력되는 신호의 크기가 작고 열적안정성이 떨어지는 문제점이 있다. 이러한 CoCr합금 수직기록매체를 대체할 기록 매체로 Co/Pd 다층박막에 관한 연구를 수행하였다. Co/Pt 및 Co/Pd계 다층박막은 수직배향성을 가지며 일찍부터 Magneto-optical 매체로 연구되었다. Co/Pd 다층박막은 자성재료와 비자성재료를 약 2~3개 원자층의 박막 두께(10$\AA$이하)로 번갈아 가며 진공증착한 것으로. CoCr합금계 수직기록매체에 비해 열적안정성이 뛰어나고 수직방향의 잔류 자화가 큰 장점을 가지고 있다. (중략)

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.24 no.3
• /
• pp.94-98
• /
• 2014

$LiCoO_2$ thin film has received diverse attention as cathodes material of thin-film micro-batteries. In this study, $LiCoO_2$ thin films were synthesized on Au substrates by sol-gel spin coating method and an annealing process. Their structures were studied using X-ray diffraction and Raman Spectroscopy. The particle morphologies of these thin films were observed by Scaning electron microscope. From the results of X-ray diffractometry and Raman Spectroscopy analyses, it was found that as-grown films had the structure of spinel (LT-$LiCoO_2$) and layered-Rock-salt (HT-$LiCoO_2$) at $550^{\circ}C$ and $750^{\circ}C$ respectively. The annealed films at $650^{\circ}C$ were presumed to be the mixed state of these two types. Throlugh the scanning electron microscope, It was estimated that the particle size in as-grown films at $750^{\circ}C$, were larger crystilline particle than in those at the other lower temperature and well distributed in the film.

• Journal of the Korean Ceramic Society
• /
• v.42 no.3 s.274
• /
• pp.211-217
• /
• 2005

[ $Zn_{1-x}Co_{x}O$ (x=0-0.3) films were grown on Corning 7059 glasses by asymmetrical bipolar pulsed dc magnetron sputtering. The c-axis orientation along (002) plane was enhanced with increasing Co concentration. The $Zn_{1-x}Co_{x}O$ films are grown with fibrous grains of tight dome shape. The transmittance spectra measured from UV-visible showed that sp-d exchange interactions and typical d-d transitions become activated with increasing Co concentration. The electrical resistivity of $Zn_{1-x}Co_{x}O$ films increased with increasing Co concentration, especially it increased greatly at $30at\% Co. X-ray photoelectron spectroscopy and alternating gradient magnetometer analyses indicated that no Co metal cluster is formed and the ferromagnetic properties are exhibited. The low electrical resistivity and room temperature ferromagnetism of $Zn_{1-x}Co_{x}O$ thin films suggested the possibility of the application to Diluted Magnetic Semiconductors (DMSs).

• Korean Journal of Materials Research
• /
• v.7 no.10
• /
• pp.914-918
• /
• 1997

MBS에 의해(001)GaAs기판 위에 성장된 Zn$_{1-x}$Co$_{x}$Se(x=1.0, 7.4, 9.5 %)반도체 박막과 (ZnSe/FeSe)반도체 초격자 박막의 미세구조를 투과전자현미경을 이용하여 연구하였다. Zn$_{1-x}$Co$_{x}$Se 박막 시편의 경우, 박막과 기판 사이의 격자 불일치때문에 a/2<110>형태의 버거즈 벡터를 가지는 부정합 전위를 관찰하였다. 모든 Zn$_{1-x}$Co$_{x}$Se 박막과 기판의 계면은 뚜렷이 구별되었고, 계면에서 산화물이나 이물질이 존재하지 않았다. 또한, (ZnSe/FeSe)초격자를 성장시키기 전에 GaAs기판 위에 ZnSe바닥층을 넣음으로써 고품질의 (ZnSe/FeSe)초격자를 얻었다. (ZnSe/FeSe)초격자에 있는 FeSe는 섬아연광 결정구조로 존재하였다.

• Journal of the Korean Magnetics Society
• /
• v.3 no.3
• /
• pp.221-228
• /
• 1993

The general requirements of recording media include recording performance, environmental stability, runnability on the drive or deck, and manufacturability. CoCrMo thin films were prepared using RF sputtering system for a study on chemical stability. Surface degradation of the CoCrMo thin film was studied by SEM, XPS and AES. Surface degradation was found to be dependent of sputtering condition and Mo content. Addition of Mo to CoCr thin film improved dramatically its surface degradation resistance in dilute sulfuric acid, as indicated by active-passive transition appeared in electrochemical polarization curve. Futhermore, the passive current density was decreased with increasing Mo content. The reduction in a number density of corrosion sites by Mo addition vms observed, after accelerated corrosion test. AES survey indicated that corrosion occured on the site with Cr depletion and highly concentrated chloride ions.

• Journal of the Korean Magnetics Society
• /
• v.23 no.5
• /
• pp.154-158
• /
• 2013

We have analyzed the magnetization curves measures by using VSM and MOKE in synthetic antiferromagnetic coupled CoB/Ru/CoB thin film. The measured results were compared with calculated ones by Stoner-Wohlfarth model based on the magnetization behavior of two ferromagnetic layers ($M_1$, $M_2$). The calculated total magnetization ($M_{tot}=M_1+M_2$) and single layer magnetization($M_1$) behaviors were compared with measured results by using VSM and MOKE, respectively. The total magnetization curve ($M_{tot}=M_1+M_2$) showed reversible magnetization behavior with flopping field of about 50 Oe. While single layer magnetization ($M_1$) behaviors showed irreversible magnetization behavior in the field range of $H_F$ < H < $H_F$. These magnetization behaviors were explained by the angle difference between magnetization directions of two ferromagnetic layers in SAF sample.

• Journal of the Korean Electrochemical Society
• /
• v.6 no.4
• /
• pp.261-265
• /
• 2003

The heat treatment process of thin film microbatteries manufacturing processes has several Problems. This study, without heat treatment, considered the characteristics of $LiCoO_2$ thin films deposited by bais sputtering method inducing the structural change of the thin film. The properties of deposited $LiCoO_2$ thin films such as crystal structure, morphology, and discharge capacity were observed by various analysis methods. Among $LiCoO_2$ thin films deposited by substrate bias $voltage(V_b)$, the one deposited by substrate bias voltage of -50V had the highest initial discharge capacity of about $60{\mu}Ah/cm^2{\mu}m.$ We confirmed that $LiCoO_2$ thin film could be used as cathode material of lithium thin film microbatteries without annealing.