• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.88-89
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• 2009

In this paper, we investigated about wet cleaning effect as deep trench formation methods for Power chip devices. Deep trench structure was classified by two methods, PSU (Poly Stick Up) and Non-PSU structure. In this paper, we could remove residue defect during wet. cleaning after deep trench etch process for non-PSU structure device as to change wet cleaning process condition. V-SEM result showed void image at the trench bottom site due to residue defect and residue component was oxide by EDS analysis. In order to find the reason of happening residue defect, we experimented about various process conditions. So, defect source was that oxide film was re-deposited at trench bottom by changed to hydrophobic property at substrate during hard mask removal process. Therefore, in order to removal residue defect, we added in-situ SCI during hard mask removal process, and defect was removed perfectly. And WLR (Wafer Level Reliability) test result was no difference between normal and optimized process condition.

• Membrane and Water Treatment
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• v.12 no.1
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• pp.1-9
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• 2021

This study optimized the chemical cleaning process of discarded RO membranes for reuse in less demanding separation processes. The effect of physicochemical parameters, including the temperature, cleaning time, pH of the cleaning solution, and addition of additives, on the cleaning process was investigated. The membrane performance was evaluated by testing the flux recovery rate and salt rejection before and after the cleaning process. High temperatures (45-50 ℃) resulted in a better flux recovery rate of 71% with more than 80% salt rejection. Equal time for acid and base cleaning 3-3 h presented a 72.43% flux recovery rate with salt rejection above 85%. During acid and base cleaning, the best results were achieved at pH values of 3.0 and 12.0, respectively. Moreover, 0.05% concentration of ethylenediaminetetraacetic acid presented 72.3% flux recovery, while 69.2% flux was achieved using sodium dodecyl sulfate with a concentration of 0.5%; both showed >80% salt rejection, indicating no damage to the active layer of the membrane. Conversely, 0.5% concentration of sodium percarbonate showed 83.1% flux recovery and 0.005% concentration of sodium hypochlorite presented 85.2% flux recovery, while a high concentration of these chemicals resulted in oxidation of the membrane that caused a reduction in salt rejection.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2000.11a
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• pp.23-26
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• 2000

This paper introduces a cleaning process for removing submicron-sized particles from NiP hard disk substrates by the liquid-assisted laser cleaning technique. Measurements of cleaning performance and time-resolved optical diagnostics are performed to analyze the physical mechanism of contaminant removal. The results reveal that nanosecond laser pulses are effective for removing the contaminants regardless of the wavelength and that a thermal mechanism involving explosive vaporization of liquid dominates the cleaning process.

• Journal of Korean Society of Water and Wastewater
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• v.24 no.1
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• pp.93-101
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• 2010

Reverse osmosis (RO) membranes have been widely used for desalination as well as water and wastewater treatment facilities. Cleaning process is important to maintain stable operation as well as prevention of membrane fouling. Purpose of this research is to analyze electrostatistic and chemical characteristics after cleaning of RO membrane against $SiO_2$ scale. Four RO membranes of polyamide are used and examined about effect of chemical cleaning. EDTA (ethylene diamine tetraacetic acid) and SDS (sodium dodecil sulfate) and NaOH are applied for cleaning process after operation in synthetic water. Then, cleaning was performed with chemicals such concentration as 6hr, 12hr and 24hr, respectively. As a result, transmittances of FT-IR of four membranes are compared at each cleaning concentration. Ta/Tv shows difference of chemical composition between new membrane and cleaning membrane after cleaning. Type B of RO membrane is turned out to be most vulnerable to cleaning among four membranes. In terms of zeta potential, new membrane has -16 mV to +6 mV on pH while scaled membrane has -18 mV to 2 mV. However, it changed -23mV to 0.9 mV after cleaning. In comparison with existing salt rejection of RO membranes after cleaning, the rejection of the membranes goes down 0.7% maximum. Though cleaning changes the characteristics of membrane surface, it does not greatly affect salt rejection. pH is a critical factor to flux change in PA (polyamide) membrane.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.103-104
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• 2006

$Pb(Zr,Ti)O_3(PZT)$ is very attractive ferroelectric materials for ferroelectric random access memory (FeRAM) applications because of its high polarization ability and low process temperature. However, Chemical Mechanical Polishing (CMP) pressure and velocity must be carefully adjusted because FeRAM shrinks to high density devices. The contaminations such as slurry residues due to the absence of the exclusive cleaning chemicals are enough to influence on the degradation of PZT thin film capacitors. The surface characteristics of PZT thin film were investigated by the change of process parameters and the cleaning process. Both the low CMP pressure and the cleaning process must be employed, even if the removal rate and the yield were decreased, to reduce the fatigue of PZT thin film capacitors fabricated by damascene process. Like this, fatigue characteristics were partially controlled by the regulation of the CMP process parameters in PZT damascene process. And the exclusive cleaning chemicals for PZT thin films were developed in this work.

• Journal of the Korean institute of surface engineering
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• v.35 no.6
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• pp.377-382
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• 2002

We investigated the appropriate wet cleaning process for Co-Ti-Si compounds formed on top of cobalt disilicide made from Co/Ti deposition and two rapid thermal annealing (RTA). We employed three wet cleaning processes, WP1 ($H_2$SO$_4$ etchant), WP2 ($NH_4$OH etchant), and WP3 which execute sequentially WP1 and WP2 after the first RTA. All samples were cleaned with BOE etchant after the second RTA. We characterized the sheet resistance with process steps by a four-point probe, the microstructure evolution by a cross detail sectional transmission electron microscope, a Auger depth profiler, and a X-ray diffractometer (XRD). We confirmed WP3 wet cleaning process were the most suitable to remove CoTiSi layer selectively.

• Membrane and Water Treatment
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• v.7 no.1
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• pp.1-10
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• 2016

Ultrafiltration is known to be one of the most commonly applied techniques in water treatment. Membrane fouling is the main limiting factor in terms of process efficiency and restricting it to the manageable degree is crucial. Natural organic matter is often found to be a major foulant in surface waters. Among many known fouling prevention techniques, the membrane chemical cleaning is widely employed. This study focuses on evaluating the cleaning efficiency of polymeric and ceramic membranes with the use of various chemicals. The influence of cleaning agent type and its concentration, membrane material and its MWCO, and cleaning process duration on the recovery of membrane flux was analyzed. Results have shown that, regardless of membrane type and MWCO, the most effective cleaning agent was NaOH.

• Korean Journal of Materials Research
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• v.24 no.8
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• pp.429-433
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• 2014

As the fabrication technology used in FPDs(flat-panel displays) advances, the size of these panels is increasing and the pattern size is decreasing to the um range. Accordingly, a cleaning process during the FPD fabrication process is becoming more important to prevent yield reductions. The purpose of this study is to develop a FPD cleaning system and a cleaning process using a two-phase flow. The FPD cleaning system consists of two parts, one being a cleaning part which includes a two-phase flow nozzle, and the other being a drying part which includes an air-knife and a halogen lamp. To evaluate the particle removal efficiency by means of two-phase flow cleaning, silica particles $1.5{\mu}m$ in size were contaminated onto a six-inch silicon wafer and a four-inch glass wafer. We conducted cleaning processes under various conditions, i.e., DI water and nitrogen gas at different pressures, using a two-phase-flow nozzle with a gap distance between the nozzle and the substrate. The drying efficiency was also tested using the air-knife with a change in the gap distance between the air-knife and the substrate to remove the DI water which remained on the substrate after the two-phase-flow cleaning process. We obtained high efficiency in terms of particle removal as well as good drying efficiency through the optimized conditions of the two-phase-flow cleaning and air-knife processes.

• Journal of Korean Society of Water and Wastewater
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• v.25 no.3
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• pp.285-291
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• 2011

Membrane fouling is an unavoidable phenomenon and major obstacle in the economic and efficient operation under sea water reverse osmosis (SWRO). When fouling occurs on the membrane surface, the permeate quantity and quality decrease, the trans-membrane pressure (TMP) and operation costs increase, and the membrane may be damaged. Therefore, chemical cleaning process is important to prevent permeate flow from decreasing in RO membrane filtration process. This study focused on proper chemical cleaning condition for Shuaibah RO plant in Saudi Arabia. Several chemical agents were used for chemical cleaning at different contact time and concentrations of chemicals. Also autopsy analysis was performed using LOI, FT-IR, FEEM, SEM and EDX for assessment of fouling. Specially, FEEM analysis method was thought as analyzing and evaluating tool available for selection of the first applied chemical cleaning dose to predict potential organic fouling. Also, cleaning time should be considered by the condition of RO membrane process since the cleaning time depends on the membrane fouling rate. If the fouling exceeds chemical cleaning guideline, to perfectly remove the fouling, certainly, the chemical cleaning is increased with membrane fouling rate influenced by raw water properties, pre-treatment condition and the point of the chemical cleaning operation time. Also choice of cleaning chemicals applied firstly is important.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.114-122
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• 2024

NF₃, Chamber cleaning gas, has a high Global Warming Potential (GWP) of 17,000, causing significant greenhouse effects. Reducing gas usage during the cleaning process is crucial while increasing the cleaning Rate and reducing cleaning standard deviation (Stdev). In a previous study with a 6-inch PECVD chamber, a multiple linear regression analysis showed that Power and Pressure had no significant effect on the cleaning Rate because of their P-values of 0.42 and 0.68. The weight for Flow is 11.55, and the weights for Power and Pressure are 1.4 and 0.7. Due to the limitations of the research equipment, which differed from those used in actual industrial settings, it was challenging to assess the effects in actual industrial environment. Therefore, to show an actual industrial environment, we conducted the cleaning process on a 12-inch PECVD chamber, which is production-level equipment, and quantitatively analyzed the effects of each variable. Power, Pressure, and NF3 Flow all had P-values close to 0, indicating strong statistical significance. The weight for Flow is 15.68, and the weights for Power and Pressure are 4.45 and 5.24, respectively, showing effects 3 and 7 times greater than those with the 6-inch equipment on the cleaning rate. Additionally, we analyzed the cleaning Stdev and derived that there is a trade-off between increasing the cleaning Rate and reducing the cleaning Stdev.