• Journal of Institute of Control, Robotics and Systems
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• v.14 no.4
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• pp.327-331
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• 2008

An in-line wet etch/cleaning system was established for the research and development in wet etch process as a formation of electrode such as metal or transparent conductive oxide layer. A reverse moving system was equipped in the in-line wet etch/cleaning system for the alternating motion of glass substrate in a wet etch bath of the system. Therefore, it was possible for the glass substrate to be moved back and forth and it was possible to reduce the size of the system by using the reversing moving system. For the effect of the alternating motion of substrate on the etch rate in the in-line wet etch bath, indium tin oxide(ITO) patterns were obtained through wet etch process in the in-line system in which the substrate was moved back and forth. From the CD(critical dimension) skews resulted from the ADI CD and ACI CD of the ITO patterns, it was concluded that the alternating motion of glass substrate are possible to be applied to the mass production of wet etch process.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.57-64
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• 2000

As integrated circuits become more complex, the number of I/O connections per chip grow. Conventional wire-bonding, lead-frame mounting techniques are unable to keep up. The space saved by shrinking die size is lost when the die is packaged in a huge device with hundreds of leads. The solution is bumps; gold, conductive adhesive, but most importantly solder bumps. Virtually every semiconductor manufacturer in the world is using or planning to use bump technology fur their larger and more complex devices. Several wafer-bumping processes used in the manufacture of bumped wafer. Some of the more popular techniques are evaporative, stencil or screen printing, electroplating, electrodes nickel, solder jetting, stud bumping, decal transfer, punch and die, solder injection or extrusion, tacky dot process and ball placement. This paper will discuss the process steps for bumping wafers using these techniques. Critical cleaning is a requirement for each of these processes. Key contaminants that require removal are photoresist and flux residue. Removal of these contaminants requires wet processes, which will not attack, wafer metallization or passivation. research has focused on enhanced cleaning solutions that meet this critical cleaning requirement. Process parameters defining time, temperature, solvency and impingement energy required to solvate and remove residues from bumped wafers will be presented herein.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.51-59
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• 2000

As integrated circuits become more complex, the number of I/O connections per chip grow. Conventional wire-bonding, lead-frame mounting techniques are unable to keep up. The space saved by shrinking die size is lost when the die is packaged in a huge device with hundreds of leads. The solution is bumps; gold, conductive adhesive, but most importantly solder bumps. Virtually every semiconductor manufacturer in the world is using or planning to use bump technology for their larger and more complex devices. Several wafer-bumping processes used in the manufacture of bumped wafer. Some of the more popular techniques are evaporative, stencil or screen printing, electroplating, electroless nickel, solder jetting, stud humping, decal transfer, punch and die, solder injection or extrusion, tacky dot process and ball placement. This paper will discuss the process steps for bumping wafers using these techniques. Critical cleaning is a requirement for each of these processes. Key contaminants that require removal are photoresist and flux residue. Removal of these contaminants requires wet processes, which will not attack, wafer metallization or passivation. Research has focused on enhanced cleaning solutions that meet this critical cleaning requirement. Process parameters defining time, temperature, solvency and impingement energy required to solvate and remove residues from bumped wafers will be presented herein.

• Journal of Welding and Joining
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• v.19 no.3
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• pp.305-310
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• 2001

UBM-coated Si-wafer was fluxlessly soldered with glass substrate in $N_2$ atmosphere using plasma cleaning method. The bulk Sn-37wt.%Pb solder was rolled to the sheet of $100\mu\textrm{m}$ thickness in order to bond a solder disk by fluxless 1st reflow process. The oxide layer on the solder surface was analysed by AES(Auger Electron Spectroscopy). Through rolling, the oxide layer on the solder surface became thin, and it was possible to bond a solder disk on the Si-wafer with fluxless process in $N_2$ gas. The Si-wafer with a solder disk was plasma-cleaned in order to remove oxide layer formed during 1st reflow and soldered to glass by 2nd reflow process without flux in $N_2$ atmosphere. The thickness of oxide layer decreased with increasing plasma power and cleaning time. The optimum plasma cleaning condition for soldering was 500W 12min. The joint was sound and the thicknesses of intermetallic compounds were less than $1\mu\textrm{m}$.

• Journal of the Korean Society for Precision Engineering
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• v.28 no.10
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• pp.1217-1223
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• 2011

In this paper, the dielectric barrier discharge plasma generator has been studied for producing of the high concentration ozone gas. Proposed plasma generator has the structure of extremely narrow discharge air gap(0.15mm) in order to realize the high electric field discharge. We investigate the performance of the dielectric barrier discharge plasma generator experimentally and the results show that the generator has very high ozone concentration characteristics of 13.7[wt%/$O_2$] at the oxygen flow rate of 1[${\ell}$/min] of each discharge cell. So, we confirmed that the proposed plasma generator is suitable for the high concentration ozone production facility of the eco-friendly ozone functional water cleaning system in the electronic components cleaning process.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.12
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• pp.579-585
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DI-O3 water) in semiconductor wet cleaning process to replace the conventional RCA methods has been studied. In this paper, we propose the water-electrode type ozone generator which has the ozone gas characteristics of the high concentration and high purity to produce the high concentration DI-O3 water for the silicon wafer surface cleaning process. The ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. We investigate the performance of the proposed ozone generator which has the design goal of the concentration of 7[wt%] and ozone generation quantity of 6[g/hr] at flow rate of 1[$\ell$/min). The experiment results show that the water electrode type ozone generator has the characteristics of 8.48[wt%] of concentration, 8.08[g/hr] of generation quantity and 76.2[g/kWh] of yield and it's possible to use the proposed ozone generator for the DI-O3 water cleaning process of silicon wafer surface.

• Membrane and Water Treatment
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• v.11 no.2
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• pp.97-109
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• 2020

Membrane fouling is the main drawback of membrane technology. Frequent membrane cleaning and membrane replacement are, therefore, required to reduce membrane fouling that causes permeate flux reduction, lower rejection, or higher operating pressure. Studies have proved that the alteration of membrane properties is the key controlling factor in lessening membrane fouling. Among stimuli-responsive membranes, thermo-responsive membrane is the most popular, with a drastic phase transition and swelling-shrinking behavior caused by the temperature change. In this study, the thermo-responsive ability of two commercial membranes, PolyCera® Titan membrane and PolyCera® Hydro membrane, at different temperatures was studied on the antifouling function of the membrane in palm oil mill effluent (POME) treatment. The evaluation of the membrane's thermo-responsive ability was done through three cycles of adsorption (fouling) and desorption (defouling) processes in a membrane filtration process. The experimental result depicted that PolyCera® Hydro membrane had a higher membrane permeability of 67.869 L/㎡.h.bar than PolyCera® Titan membrane at 46.011 L/㎡.h.bar. However, the high membrane permeability of PolyCera® Hydro membrane was compensated with low removal efficiency. PolyCera® Titan membrane with a smaller mean pore size had better rejection performance than PolyCera® Hydro membrane for all tested parameters. On the other hand, PolyCera® Titan membrane had a better hydrodynamic cleaning efficiency than PolyCera® Hydro membrane regardless of the hydrodynamic cleaning temperature. The best hydrodynamic cleaning performed by PolyCera® Titan membrane was at 35℃ with the flux recovery ratio (FRR) of 99.17 ± 1.43%. The excellent thermo-responsive properties of the PolyCera® Titan membrane could eventually reduce the frequency of membrane replacement and lessen the use of chemicals for membrane cleaning. This outstanding exploration helps to provide a solution to the chemical industry and membrane technology bottleneck, which is the membrane fouling, thus reducing the operating cost incurred by the membrane fouling.

• Journal of Adhesion and Interface
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• v.14 no.1
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• pp.21-27
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• 2013

Cellulose-based rayon fibers or fabrics can be thermally decomposed very fast within a narrow temperature window during stabilization process. Therefore the stabilization stage is critically important for producing rayon-based carbon fibers. Consequently, in the present study the effects of isothermal stabilization and ultrasonic cleaning on the weight loss, chemical composition, microstructure, and fabric texture of cellulose-based rayon fabrics were explored. The temperature of the isothermal stabilization process performed in the range of $200{\sim}240^{\circ}C$ influenced the processing time, carbon and oxygen contents, cellulose structural change, and fabric texture. The ultrasonic cleaning, which was conducted prior to the stabilization process, played a role in shortening the stabilization time, increasing the carbon contents, decreasing the oxygen contents, and changing the XRD pattern. Also, it was considered that the ultrasonic cleaning contributed to retarding the weight loss, to reducing the thermal shrinkage, and further to reducing the fast physical change of rayon fabrics.

• Journal of KIISE:Computer Systems and Theory
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• v.37 no.5
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• pp.272-284
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• 2010

Flash Memory differs from the hard disk, because it cannot be overwritten. Most of the flash memory file systems use not-in-place update mechanisms for the update. Flash memory file systems execute sometimes block cleaning process in order to make writable space while performing not-in-place update process. Block cleaning process collects the invalid pages and convert them into the free pages. Block cleaning process is a factor that affects directly on the performance of the flash memory. Thus this paper suggests the efficient page allocation method, which reduces block cleaning cost by minimizing the numbers of block that has valid and invalid pages at a time. The result of the simulation shows an increase in efficiency by reducing more block cleaning costs than the original YAFFS.

• Journal of Biosystems Engineering
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• v.24 no.4
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• pp.317-324
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• 1999

This study was conducted to decide several design criterion for clean-washed rice processing system development. A Computer simulation was used to predict and analyze the mass balances and moisture changes of the process of clean-washed rice processing system. The following results were obtained from this study. 1. In order to attain the processing capacity of 1,000kg/h of the clean-washed rice processing system, that of the system was designed as 1,400kg/h which was based on the safety factor of 40% and handling capability of mass variations occurred during processing. 2. It was analyzed that the proper time required for aqueous cleaning process should be within one minute. 2. It was analyzed that the proper time required for aqueous cleaning process should be within one minute. 3. The final moisture content of clean-washed rice was controlled being 15%(w.b.) for the sake of safe storage. 4. It was proven that the optimum drying time was three minutes for the clean-washed rice dried by a rotary dryer.